Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2012
05/16/2012CN102456748A 一种肖特基二极管及其制造方法 One kind of the Schottky diode and its manufacturing method
05/16/2012CN102456747A 静电保护二极管 Static protection diode
05/16/2012CN102456746A 非挥发性半导体存储单元、器件及制备方法 Non-volatile semiconductor memory cell, the device and method of preparation
05/16/2012CN102456745A Flash memory as well as preparation method and operation method thereof
05/16/2012CN102456744A 薄膜晶体管 Thin film transistor
05/16/2012CN102456743A 薄膜晶体管及其制造方法 A thin film transistor and manufacturing method thereof
05/16/2012CN102456742A 半导体器件以及制造半导体器件的方法 A semiconductor device and a method of manufacturing a semiconductor device
05/16/2012CN102456741A Semiconductor device
05/16/2012CN102456740A P型场效应晶体管的应变结构 Strain P-type field effect transistor structure
05/16/2012CN102456739A Semiconductor structure and forming method thereof
05/16/2012CN102456738A 一种vdmos晶体管 One kind of transistor vdmos
05/16/2012CN102456737A 半导体结构及其制造方法 Semiconductor structure and manufacturing method
05/16/2012CN102456736A 一种沟槽式场效应管及其制备方法 One kind of trench FET and its preparation method
05/16/2012CN102456735A Semiconductor apparatus and manufacturing method for same
05/16/2012CN102456734A 半导体结构及其制作方法 The semiconductor structure and method of making
05/16/2012CN102456733A 晶体管及其制作方法 Transistor and its manufacturing method
05/16/2012CN102456732A Mos晶体管及其制造方法、cmos图像传感器 Mos transistor and its manufacturing method, cmos image sensor
05/16/2012CN102456731A 半导体结构及其制造方法 Semiconductor structure and manufacturing method
05/16/2012CN102456730A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/16/2012CN102456729A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/16/2012CN102456728A Semiconductor device
05/16/2012CN102456727A 低集电极/基极电容SiGe异质结双极晶体管结构及制造方法 Low collector / base capacitance SiGe heterojunction bipolar transistor structure and method of manufacture
05/16/2012CN102456726A 锗硅异质结双极晶体管 SiGe heterojunction bipolar transistor
05/16/2012CN102456725A 一种单晶高k栅介质材料及其制备方法 Single crystal high-k gate dielectric material and method
05/16/2012CN102456724A Grid structure and manufacturing method thereof
05/16/2012CN102456723A 半导体结构及其制造方法 Semiconductor structure and manufacturing method
05/16/2012CN102456722A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
05/16/2012CN102456721A 陶瓷衬底的氮化镓基芯片及制造方法 GaN-based chip and method of manufacturing the ceramic substrate
05/16/2012CN102456720A 高k金属栅极半导体晶体管的结构 High-k metal gate structure semiconductor transistors
05/16/2012CN102456719A Device capable of improving reverse breakdown voltage of PN (positive and negative) junction
05/16/2012CN102456718A 绝缘栅双极晶体管器件用于提升器件性能的新型上部结构 New upper structure of the IGBT device performance of devices for lifting
05/16/2012CN102456717A 半导体器件和用于制造半导体器件的方法 A semiconductor device and a method for manufacturing a semiconductor device
05/16/2012CN102456716A 半导体器件 Semiconductor devices
05/16/2012CN102456715A 一种半导体器件结构及其制作方法 A semiconductor device structure and fabrication method thereof
05/16/2012CN102456694A 一种存储器结构 A memory structure
05/16/2012CN102456692A 异质结1t-dram单元结构及其制备方法 Heterojunction 1t-dram cell structure and its preparation method
05/16/2012CN102456691A 半导体装置和半导体装置制造方法 Semiconductor device and manufacturing method of a semiconductor device
05/16/2012CN102456690A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/16/2012CN102456686A 静电放电保护电路 Electrostatic discharge protection circuit
05/16/2012CN102456678A Igbt module and a circuit
05/16/2012CN102456672A 提高dmos/ldmos器件esd性能的结构和方法 Improve dmos / structures and methods ldmos esd performance devices
05/16/2012CN102456646A Substrate structure having buried wiring and method for manufacturing the same
05/16/2012CN102456632A 半导体装置 Semiconductor device
05/16/2012CN102456621A 半导体器件结构和制作该半导体器件结构的方法 The semiconductor device structure and method of making the semiconductor device structure
05/16/2012CN102456608A 隔离结构的制备方法及其半导体元件 Preparation isolation structure and the semiconductor elements
05/16/2012CN102456605A Self-aligned body fully isolated device
05/16/2012CN102456581A 薄膜晶体管及其制造方法 A thin film transistor and manufacturing method thereof
05/16/2012CN102456580A Semiconductor device and method of fabricating the same
05/16/2012CN102456579A 具有局部的极薄绝缘体上硅沟道区的半导体器件 A semiconductor device having a silicon on insulator partial thin channel region
05/16/2012CN102456578A High-voltage transistor and manufacturing method thereof
05/16/2012CN102456577A 应力隔离沟槽半导体器件的形成方法 Stress isolation method for forming a semiconductor device trenches
05/16/2012CN102456576A Stress insulating groove semiconductor device and forming method thereof
05/16/2012CN102456575A 超级结结构的半导体器件的制作方法及器件结构 The method of making a semiconductor device of the super junction structure and device structure
05/16/2012CN102456574A 一种自对准金属硅化物的沟槽型半导体器件及制造方法 A self-aligned trench-type semiconductor device and method of manufacturing metal silicide
05/16/2012CN102456548A 具有氮化镓层的多层结构基板及其制法 Gallium nitride layer having a multilayer structure of the substrate preparation method
05/16/2012CN102453866A High-dielectric-constant gate dielectric material and preparation method thereof
05/16/2012CN102157362B Metal gate electrode using silicidation and method of formation thereof
05/16/2012CN101946325B Igbt and method of producing the same
05/16/2012CN101872784B Three-sided silicified gate metallic oxide semiconductor field effect transistor and preparation method thereof
05/16/2012CN101842884B III nitride electronic device and III nitride semiconductor epitaxial substrate
05/16/2012CN101740620B Semiconductor device with grid side wall layer and forming method thereof
05/16/2012CN101740393B Semiconductor device and manufacture method thereof
05/16/2012CN101635312B Device structures with a self-aligned damage layer and methods for forming such device structures
05/16/2012CN101587893B 功率半导体装置 Power semiconductor device
05/16/2012CN101582445B Thin film transistor
05/16/2012CN101345219B Method of fabricating semiconductor device
05/16/2012CN101114583B Semiconductor power device and manufacturing method thereof
05/15/2012US8179585 Coupled quantum well structure
05/15/2012US8178980 Bond pad structure
05/15/2012US8178979 Low-noise flip-chip packages and flip chips thereof
05/15/2012US8178974 Microstrip structure including a signal line with a plurality of slit holes
05/15/2012US8178972 Semiconductor device and manufacturing method therefor
05/15/2012US8178967 Low fabrication cost, high performance, high reliability chip scale package
05/15/2012US8178957 Electronic component device, and method of manufacturing the same
05/15/2012US8178951 Compound semiconductor substrate and control for electrical property thereof
05/15/2012US8178950 Multilayered through a via
05/15/2012US8178947 Semiconductor device
05/15/2012US8178946 Modulation doped super-lattice base for heterojunction bipolar transistors
05/15/2012US8178944 Method for forming a one-time programmable metal fuse and related structure
05/15/2012US8178940 Schottky barrier diode and method for using the same
05/15/2012US8178939 Interfacial barrier for work function modification of high performance CMOS devices
05/15/2012US8178936 Double-side mountable MEMS package
05/15/2012US8178935 MEMS chip and package method thereof
05/15/2012US8178934 Dielectric film with hafnium aluminum oxynitride film
05/15/2012US8178931 Bridge for semiconductor internal node
05/15/2012US8178930 Structure to improve MOS transistor on-breakdown voltage
05/15/2012US8178928 Intermediate structures having reduced width contact holes that are formed during manufacture of memory cells having contact structures
05/15/2012US8178925 Semiconductor diode structure operation method
05/15/2012US8178922 Trench MOSFET with ultra high cell density and manufacture thereof
05/15/2012US8178921 Semiconductor device having reduced standby leakage current and increased driving current and method for manufacturing the same
05/15/2012US8178920 Semiconductor device and method of forming the same
05/15/2012US8178918 Charge trap type non-volatile memory device and method for fabricating the same
05/15/2012US8178917 Non-volatile semiconductor storage device having memory cells disposed three-dimensionally, and method of manufacturing the same
05/15/2012US8178916 Nonvolatile semiconductor storage device
05/15/2012US8178911 Semiconductor device having reduced sub-threshold leakage
05/15/2012US8178910 Semiconductor device
05/15/2012US8178908 Electrical contact structure having multiple metal interconnect levels staggering one another
05/15/2012US8178907 Nanoscopic wire-based electrical crossbar memory-devices and arrays
05/15/2012US8178906 Laser chalcogenide phase change device
05/15/2012US8178902 CMOS transistor with dual high-k gate dielectric and method of manufacture thereof
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