Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2012
05/24/2012WO2012067182A1 Organic semiconductor device
05/24/2012WO2012067139A1 Compound, field-effect transistor and process for production thereof, solar cell and process for production thereof, organic light-emitting element and process for production thereof, and composition
05/24/2012WO2012067060A1 Production method for thin film transistor, and display device containing thin film transistor produced thereby
05/24/2012WO2012067030A1 Electrode film, sputtering target, thin-film transistor, method for manufacturing thin-film transistor
05/24/2012WO2012066941A1 Method for manufacturing semiconductor device
05/24/2012WO2012066892A1 Semiconductor device and manufacturing method therefor
05/24/2012WO2012066820A1 Silicon carbide semiconductor device
05/24/2012WO2012066786A1 Method for manufacturing nonvolatile semiconductor storage element, and nonvolatile semiconductor storage element
05/24/2012WO2012066755A1 Thin-film transistor substrate, display device provided with same, and method for manufacturing thin-film transistor substrate
05/24/2012WO2012066745A1 Thin-film transistor substrate, display device provided with same, and method for producing thin-film transistor substrate
05/24/2012WO2012066703A1 Semiconductor device and method for manufacturing same
05/24/2012WO2012066701A1 Nitride semiconductor device
05/24/2012WO2012066695A1 Semiconductor device and method for manufacturing same
05/24/2012WO2012066444A1 Strained nanowire devices
05/24/2012WO2012066087A1 Method for fabricating thin-film bottom-contact transistors and bottom-contact transistors thus obtained
05/24/2012WO2012066037A1 Thyristor component
05/24/2012WO2012065536A1 Semiconductor structure and method for forming the same
05/24/2012WO2012065515A1 Vdmos device and method for fabricating the same
05/24/2012WO2012065514A1 Ldmos device and method for fabricating the same
05/24/2012WO2012065485A1 Ldmos device and method for fabricating the same
05/24/2012WO2012006546A3 Circuits, devices and sensors for fluid detection
05/24/2012US20120129329 Manufacturing method for semiconductor device
05/24/2012US20120129323 Semiconductor thin film, thin film transistor, method for manufacturing same, and manufacturing equipment of semiconductor thin film
05/24/2012US20120128018 Interband Cascade Lasers
05/24/2012US20120127795 Non-volatile memory and manufacturing method thereof and operating method of memory cell
05/24/2012US20120127793 Memory arrays
05/24/2012US20120127786 Flux programmed multi-bit magnetic memory
05/24/2012US20120127396 Active matrix substrate, liquid crystal display panel, liquid crystal display device, and method for manufacturing active matrix substrate
05/24/2012US20120126885 Double gated 4f2 dram chc cell and methods of fabricating the same
05/24/2012US20120126884 Double gated fin transistors and methods of fabricating and operating the same
05/24/2012US20120126883 Vertically stacked fin transistors and methods of fabricating and operating the same
05/24/2012US20120126881 Mems sensor using multi-layer movable combs
05/24/2012US20120126880 Igbt device with buried emitter regions
05/24/2012US20120126434 Liquid resin composition and semiconductor device using the same
05/24/2012US20120126433 Methods and systems for fabrication of mems cmos devices in lower node designs
05/24/2012US20120126377 Semiconductor device
05/24/2012US20120126376 Silicon dioxide film and process for production thereof, computer-readable storage medium, and plasma cvd device
05/24/2012US20120126375 Method for forming metrology structures from fins in integrated circuitry
05/24/2012US20120126374 Forming Three Dimensional Isolation Structures
05/24/2012US20120126372 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same
05/24/2012US20120126371 Conductive nitride semiconductor substrate and method for producing the same
05/24/2012US20120126370 Thin film resistors and methods of manufacture
05/24/2012US20120126368 Semiconductor Package
05/24/2012US20120126362 Sos substrate having low defect density in the vicinity of interface
05/24/2012US20120126361 Epitaxial wafer and production method thereof
05/24/2012US20120126360 Semiconductor device and a method of manufacturing the same and designing the same
05/24/2012US20120126359 Structure to Reduce Etching Residue
05/24/2012US20120126353 Magnetic Memory Device
05/24/2012US20120126352 Method for manufacturing semiconductor chips, mounting method and semiconductor chip for vertical mounting onto circuit substrates
05/24/2012US20120126351 Interconnection system on a plane adjacent to a solid-state device structure
05/24/2012US20120126350 Batch fabricated 3d interconnect
05/24/2012US20120126349 Systems and methods for a three-layer chip-scale mems device
05/24/2012US20120126348 Systems and methods for a four-layer chip-scale mems device
05/24/2012US20120126347 Packages and methods for packaging
05/24/2012US20120126346 Method for creating a micromechanical membrane structure and mems component
05/24/2012US20120126345 Mems device with stress isolation and method of fabrication
05/24/2012US20120126344 Sensor device and method
05/24/2012US20120126343 Self Aligned Silicided Contacts
05/24/2012US20120126342 Field effect transistors with low k sidewall spacers and methods of fabricating same
05/24/2012US20120126341 Using low pressure epi to enable low rdson fet
05/24/2012US20120126340 CMOS Devices With Reduced Short Channel Effects
05/24/2012US20120126334 Breakdown voltage improvement with a floating substrate
05/24/2012US20120126331 Spacer elements for semiconductor device
05/24/2012US20120126329 Finfet process compatible native transistor
05/24/2012US20120126327 Resonator having terminals and a method for manufacturing the resonator
05/24/2012US20120126325 Method for adjusting fin width in integrated circuitry
05/24/2012US20120126324 Semiconductor device and method of manufacturing the same
05/24/2012US20120126323 Semiconductor device having a split gate and a super-junction structure
05/24/2012US20120126322 Ldmos semiconductor device
05/24/2012US20120126321 Semiconductor device and method of making the same
05/24/2012US20120126319 Lateral diffusion field effect transistor with drain region self-aligned to gate electrode
05/24/2012US20120126318 Integrated Circuit Including Field Effect Transistor
05/24/2012US20120126316 Semiconductor device
05/24/2012US20120126315 Semiconductor apparatus
05/24/2012US20120126314 Vertical dmos-field effect transistor
05/24/2012US20120126313 Ultra thin die to improve series resistance of a fet
05/24/2012US20120126312 Vertical dmos-field effect transistor
05/24/2012US20120126311 Power transistor with metal source and method of manufacture
05/24/2012US20120126310 Method for forming channel material
05/24/2012US20120126309 Integrated non-volatile memory (nvm) and method therefor
05/24/2012US20120126308 Non-volatile memory device and method of manufacturing the same
05/24/2012US20120126307 Non-volatile memory and manufacturing method thereof
05/24/2012US20120126306 Nonvolatile semiconductor memory device and manufacturing method of nonvolatile semiconductor memory device
05/24/2012US20120126305 Strained Semiconductor Device and Method of Making Same
05/24/2012US20120126304 Floating gate type semiconductor memory device and method of manufacturing the same
05/24/2012US20120126303 Nonvolatile semiconductor memory device and method for manufacturing nonvolatile semiconductor memory device
05/24/2012US20120126302 Nonvolatile semiconductor memory device and manufacturing method of the same
05/24/2012US20120126299 Semiconductor device and method of manufacturing the same
05/24/2012US20120126297 Semiconductor device and manufacturing method thereof
05/24/2012US20120126296 Integrated circuits and fabrication methods thereof
05/24/2012US20120126295 Borderless contact for replacement gate employing selective deposition
05/24/2012US20120126294 Wafer fill patterns and uses
05/24/2012US20120126293 Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device
05/24/2012US20120126292 Heterojunction bipolar transistors with reduced base resistance
05/24/2012US20120126290 Nitride semiconductor device and method for fabricating the same
05/24/2012US20120126289 Method of forming a semiconductor structure
05/24/2012US20120126287 Compound semiconductor device having insulation film with different film thicknesses beneath electrodes
05/24/2012US20120126285 Vertical NPNP Structure In a Triple Well CMOS Process
05/24/2012US20120126284 Semiconductor device
05/24/2012US20120126251 Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate, and semiconductor device
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