| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/26/2012 | US20120097974 Power semiconductor device |
| 04/26/2012 | US20120097973 High performance power switch |
| 04/26/2012 | US20120097971 Contiguous and virtually contiguous area expansion of semiconductor substrates |
| 04/26/2012 | US20120097970 Atomic layer deposition encapsulation for power amplifiers in rf circuits |
| 04/26/2012 | US20120097968 Multilayer substrate having gallium nitride layer and method for forming the same |
| 04/26/2012 | US20120097966 Thin Film Transistor, Organic Light Emitting Diode (OLED) Display Including the Same, and Manufacturing Methods of Them |
| 04/26/2012 | US20120097965 Thin film transistor and display device using the same |
| 04/26/2012 | US20120097964 Semiconductor Device and Manufacturing Method Thereof |
| 04/26/2012 | US20120097963 Semiconductor device and method of manufacturing the same |
| 04/26/2012 | US20120097962 Polysilicon thin film transistor having copper bottom gate structure and method of making the same |
| 04/26/2012 | US20120097961 Method of anodizing aluminum using a hard mask and semiconductor device thereof |
| 04/26/2012 | US20120097960 Semiconductor device and manufacturing method thereof |
| 04/26/2012 | US20120097958 Active-matrix field emission pixel |
| 04/26/2012 | US20120097957 Organic light-emitting display device and method of manufacturing the same |
| 04/26/2012 | US20120097956 Organic light emitting display device |
| 04/26/2012 | US20120097955 Thin film transistor and pixel structure having the thin film transistor |
| 04/26/2012 | US20120097953 Display apparatus and method of manufacturing the same |
| 04/26/2012 | US20120097952 Organic Light-Emitting Display Apparatus |
| 04/26/2012 | US20120097950 Semiconductor integrated circuit device and a method of fabricating the same |
| 04/26/2012 | US20120097949 Vertical organic field effect transistor and method of its manufacture |
| 04/26/2012 | US20120097948 Thin film transistor |
| 04/26/2012 | US20120097947 Thin film transistor and manufacturing method thereof |
| 04/26/2012 | US20120097943 Thin film transistor |
| 04/26/2012 | US20120097942 Semiconductor device and method for manufacturing semiconductor device |
| 04/26/2012 | US20120097941 Semiconductor device |
| 04/26/2012 | US20120097940 Display device and method for manufacturing the same |
| 04/26/2012 | US20120097923 Graphene device and method for manufacturing the same |
| 04/26/2012 | US20120097919 Limiting strain relaxation in iii-nitride hetero-structures by substrate and epitaxial layer patterning |
| 04/26/2012 | US20120097917 Aligned, Coated Nanowire Arrays for Gas Sensing |
| 04/26/2012 | US20120097916 Semiconductor device and method for manufacturing same |
| 04/26/2012 | US20120097911 Phase change memory cell structures and methods |
| 04/26/2012 | US20120097209 Fabrication of surface textures by ion implantation for antireflection of silicon crystals |
| 04/26/2012 | US20120096928 Method for manufacturing a sensor device of a gaseous substance of interest |
| 04/26/2012 | DE112006001169B4 Verfahren zur Herstellung eines SOI-Bauelements A method of manufacturing an SOI-device |
| 04/26/2012 | DE102011084956A1 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation |
| 04/26/2012 | DE102011054784A1 Integrierte Schaltungstechnologie mit verschiedenen Bauelementepitaxialschichten Integrated circuit technology with various Bauelementepitaxialschichten |
| 04/26/2012 | DE102011054700A1 Halbleiter-ESD-Bauelement und Verfahren Semiconductor device and method ESD |
| 04/26/2012 | DE102011054646A1 Ein IGBT-Modul und eine Schaltung An IGBT module and a circuit |
| 04/26/2012 | DE102011052523A1 Halbleiterstruktur und Verfahren zu deren Herstellung Semiconductor structure and process for their preparation |
| 04/26/2012 | DE102011052489A1 Halbleiterstruktur und Verfahren zu deren Herstellung Semiconductor structure and process for their preparation |
| 04/26/2012 | DE102010002450B4 Transistoren mit Metallgateelektrodenstrukturen mit großem ε und angepassten Kanalhalbleitermaterialien Transistors with metal gate electrode structures with large ε and adjusted channel semiconductor materials |
| 04/26/2012 | DE102009051521B4 Herstellung von Siliziumhalbleiterscheiben mit III-V-Schichtstrukturen für High Electron Mobility Transistoren (HEMT) und eine entsprechende Halbleiterschichtanordnung Production of silicon semiconductor wafers having III-V multilayer structures for high electron mobility transistors (HEMT) and a corresponding semiconductor layer assembly |
| 04/26/2012 | DE102009047304B4 Leistungssteigerung in PFET-Transistoren mit einem Metallgatestapel mit großem ε durch Verbessern des Dotierstoffeinschlusses Performance improvement in PFET transistors with metal gate stack with large ε by improving the Dotierstoffeinschlusses |
| 04/26/2012 | DE102007041082B4 Integrierte Schaltung und zugehöriges Herstellungsverfahren zur Verringerung von Funkelrauschen Integrated circuit and manufacturing method thereof for reducing flicker noise |
| 04/26/2012 | DE102006019950B4 Halbleitervorrichtung mit dielektrischer Trennung Semiconductor device with dielectric isolation |
| 04/26/2012 | DE102005009020B4 Verfahren zur Erzeugung eines Leistungstransistors und damit erzeugbare integrierte Schaltungsanordnung A process for the production of a power transistor and therefore producible integrated circuit arrangement |
| 04/25/2012 | EP2445027A1 Organic electronic device and method for producing the same |
| 04/25/2012 | EP2445011A1 Semiconductor device |
| 04/25/2012 | EP2445010A2 Asymetric layout structures for transistors and methods of fabricating the same |
| 04/25/2012 | EP2444998A2 Method for manufacturing semiconductor device |
| 04/25/2012 | EP2443659A2 Vertical junction field effect transistors and diodes having graded doped regions and methods of making |
| 04/25/2012 | EP2443658A2 Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation and devices made therewith |
| 04/25/2012 | EP2443657A1 Memristors based on mixed-metal-valence compounds |
| 04/25/2012 | EP2405482A9 Integrated circuit including power diode |
| 04/25/2012 | EP2294609B1 Interfacial layer regrowth control in high-k gate structure for field effect transistor |
| 04/25/2012 | EP1979948B1 Manufacturing method for thin film transistor |
| 04/25/2012 | EP1715530B1 Molecular device |
| 04/25/2012 | EP1105344B1 Micromechanical sensor and corresponding production method |
| 04/25/2012 | EP0970518B1 Trench-isolated bipolar devices |
| 04/25/2012 | CN202205759U 贴片二极管的改良结构 Improved patch diode structure |
| 04/25/2012 | CN202205758U 对称高压mos器件 Symmetrical high-voltage mos devices |
| 04/25/2012 | CN202205757U 低栅极电荷低导通电阻深沟槽功率mosfet器件 Low gate charge low on-resistance of the deep trench power mosfet devices |
| 04/25/2012 | CN202205756U 一种小体积高耐压mosfet A small-volume high voltage mosfet |
| 04/25/2012 | CN202205755U 具有超结结构的平面型功率mosfet器件 A super junction structure planar power mosfet devices |
| 04/25/2012 | CN202205754U 多通道ldmos器件 Multichannel ldmos devices |
| 04/25/2012 | CN202205753U Schottky diode |
| 04/25/2012 | CN202205752U 一种横向功率mos器件 A widthwise power mos devices |
| 04/25/2012 | CN202205751U 一种新型沟槽结构的功率mosfet器件 A novel configuration of the power mosfet devices trench |
| 04/25/2012 | CN1909245B 具有改善的开态电阻和击穿电压性能的半导体结构 Semiconductor structure having an improved on-resistance and breakdown voltage performance |
| 04/25/2012 | CN1881611B 具有槽型结构的半导体器件及其制造方法 The method of manufacturing a semiconductor device and groove structure |
| 04/25/2012 | CN1826694B Nanowhiskers with PN junctions and methods of fabricating thereof |
| 04/25/2012 | CN1793938B Structure of acceleration sensor and making method thereof |
| 04/25/2012 | CN102428564A Nanowire mesh FET with multiple threshold voltages |
| 04/25/2012 | CN102428563A 形成用于集成电路的电断金属熔丝的结构和方法 Forming an integrated circuit structure and a method for breaking an electrical fuse metal |
| 04/25/2012 | CN102428559A Bidirectional silicon carbide transient voltage suppression devices |
| 04/25/2012 | CN102428555A 半导体基板、半导体基板的制造方法及电子器件 The method of manufacturing an electronic device and a semiconductor substrate, a semiconductor substrate, |
| 04/25/2012 | CN102428550A Semiconductor switch device and method for manufacturing semiconductor switch device |
| 04/25/2012 | CN102428549A 具有取代栅极结构的场效应晶体管及其制造方法 Substituent having a field effect transistor gate structure and a manufacturing method |
| 04/25/2012 | CN102428548A Scaling of bipolar transistors |
| 04/25/2012 | CN102428519A Method for driving semiconductor storage device |
| 04/25/2012 | CN102428375A Structure having chip mounted thereon and module provided with the structure |
| 04/25/2012 | CN102427086A III-nitride enhanced-mode metal-insulator-semiconductor high electron mobility transistor (MISHEMT) device |
| 04/25/2012 | CN102427085A Ⅲ族氮化物增强型hemt器件 Ⅲ-nitride devices Enhanced hemt |
| 04/25/2012 | CN102427084A 氮化镓基高电子迁移率晶体管及制作方法 GaN-based high electron mobility transistor and manufacturing method |
| 04/25/2012 | CN102427083A 一种疏水疏油表面微结构及其制备方法 A hydrophobic oleophobic surface microstructure and its preparation method |
| 04/25/2012 | CN102427077A 一种用于桥式驱动电路中的高压隔离环结构 A bridge driver circuits for high-voltage isolation ring structure |
| 04/25/2012 | CN102427052A Silicon-on-insulator (SOI) material substrate with high-efficiency recombination center and preparation method for silicon-on-insulator (SOI) material substrate |
| 04/25/2012 | CN102427032A 一种高k和金属栅极的制作方法 And a method of manufacturing a high-k metal gate |
| 04/25/2012 | CN102427030A 一种高k和金属栅极的制作方法 And a method of manufacturing a high-k metal gate |
| 04/25/2012 | CN102426857A 应用于双边偏压非易失性存储器的方法与装置 Method and device is applied to a nonvolatile memory bilateral bias |
| 04/25/2012 | CN102117840B 一种多重金属扩散快恢复二极管及其制备方法 A multi heavy metal diffusion fast recovery diode and its preparation method |
| 04/25/2012 | CN101980365B 画素结构及其制造方法 Pixel structure and its manufacturing method |
| 04/25/2012 | CN101976687B 一种低功耗快恢复金属氧化物半导体二极管 A low-power metal oxide semiconductor diode fast recovery |
| 04/25/2012 | CN101937928B 一种消除穿通光刻针孔危害的可控硅结构生产方法 A punch through photolithographic pinhole hazards SCR structure production methods to eliminate |
| 04/25/2012 | CN101901840B 肖特基二极管装置及其制造方法 Schottky diode device and a manufacturing method |
| 04/25/2012 | CN101901834B 场效应晶体管及其制造方法 The field effect transistor and manufacturing method thereof |
| 04/25/2012 | CN101826553B 场效应晶体管及其制造方法 The field effect transistor and manufacturing method thereof |
| 04/25/2012 | CN101826523B 一种栅控二极管触发的可控硅整流式静电释放保护电路结构 One kind of gated diode triggered thyristor rectifier type electrostatic discharge protection circuit structure |
| 04/25/2012 | CN101752377B N/P metal crystal orientation for high-K metal gate Vt modulation and its manufacture method |
| 04/25/2012 | CN101752365B 集成电路结构 Integrated circuit structure |