Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2012
05/30/2012CN102484124A 氮化物半导体装置 The nitride semiconductor device
05/30/2012CN102484077A Field effect transistor, semiconductor substrate, method for manufacturing field effect transistor, and method for producing semiconductor substrate
05/30/2012CN102484076A Iii族氮化物半导体层积晶圆及iii族氮化物半导体设备 Iii nitride semiconductor wafer, and iii stacking nitride semiconductor device
05/30/2012CN102484075A 半导体器件及制造半导体器件的方法 Semiconductor device and manufacturing method of a semiconductor device
05/30/2012CN102484074A 结晶硅膜的形成方法、使用了该结晶硅膜的薄膜晶体管以及显示装置 The method for forming a crystalline silicon film, a thin film transistor using the crystalline silicon film, and a display device
05/30/2012CN102484073A 半导体装置的制造方法以及半导体装置 The method of manufacturing a semiconductor device and a semiconductor device
05/30/2012CN102484072A Current-amplifying transistor device and current-amplifying, light-emitting transistor device
05/30/2012CN102484069A Semiconductor device and process for production thereof
05/30/2012CN102484067A 包括铝-硅氮化物钝化的用于形成iii-v半导体结构的方法 Including aluminum - silicon nitride passivation method for forming a semiconductor structure iii-v
05/30/2012CN102484053A Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning
05/30/2012CN102484049A 半导体元件用外延基板、半导体元件用外延基板的制造方法以及半导体元件 The method of manufacturing an epitaxial substrate for semiconductor device, a semiconductor element and a semiconductor epitaxial substrate elements
05/30/2012CN102484044A Process for production of silicon carbide substrate, process for production of semiconductor device, silicon carbide substrate, and semiconductor device
05/30/2012CN102483972A 导电膜及使用该导电膜的换能器、挠性电路板 The conductive film using the conductive film transducers, a flexible circuit board
05/30/2012CN102483549A Liquid crystal display device and method for manufacturing liquid crystal display device
05/30/2012CN102483426A 物理量传感器 Physical sensors
05/30/2012CN102482156A Sintered in-ga-zn-o-type oxide
05/30/2012CN102482114A 混合金属氧化物 Mixed metal oxides
05/30/2012CN102479824A Diode element and method for making the same
05/30/2012CN102479823A 一种垂直型nrom存储结构及其制备方法 The vertical type nrom storage structure and preparation method
05/30/2012CN102479822A Semiconductor structure and manufacture method thereof
05/30/2012CN102479821A 半导体器件及其形成方法 Semiconductor device and method of forming
05/30/2012CN102479820A 场效应晶体管及其制备方法 A field effect transistor and a method for preparing
05/30/2012CN102479819A 场效应晶体管及其制备方法 A field effect transistor and a method for preparing
05/30/2012CN102479818A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/30/2012CN102479817A 一种垂直双扩散金属氧化物半导体场效应管结构 The vertical double diffused metal oxide semiconductor field effect transistor structure
05/30/2012CN102479816A Metal-oxide semiconductor type field-effect transistor and manufacturing method thereof
05/30/2012CN102479815A 高压非对称晶体管结构及其制备方法 High voltage asymmetric transistor structure and preparation method
05/30/2012CN102479814A 晶体管及其制作方法 Transistor and manufacturing method thereof
05/30/2012CN102479813A 晶体管及其制造方法、芯片及太阳能计算器 Transistor and its manufacturing method of the chip and solar calculator
05/30/2012CN102479812A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/30/2012CN102479811A 非易失性存储器件及其制造方法 Non-volatile memory device and manufacturing method thereof
05/30/2012CN102479810A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/30/2012CN102479809A 用于在集成电路中形成鳍的器件和方法 Device and method for forming an integrated circuit for the fin
05/30/2012CN102479808A Semiconductor device and method of fabricating the same
05/30/2012CN102479807A Silicon carbide semiconductor device and manufacturing method therefor
05/30/2012CN102479806A 超级结半导体器件及其制作方法 Super-junction semiconductor device and manufacturing method thereof
05/30/2012CN102479805A 一种超级结半导体元件及其制造方法 A super-junction semiconductor device and manufacturing method
05/30/2012CN102479804A 石墨烯电子器件 Graphene electronics
05/30/2012CN102479803A Semiconductor device and method of forming the same
05/30/2012CN102479802A Semiconductor device
05/30/2012CN102479801A Semiconductor device and forming method thereof
05/30/2012CN102479800A Terminal protecting structure of super junction device
05/30/2012CN102479790A 非挥发性记忆体及其制造方法与记忆胞的操作方法 Non-volatile memory and operation method of manufacturing methods and memory cell
05/30/2012CN102479788A 半导体器件 Semiconductor devices
05/30/2012CN102479755A Cmos器件及其制作方法 Cmos device and manufacturing method thereof
05/30/2012CN102479752A 薄膜晶体管、有源矩阵背板及其制造方法和显示器 A thin film transistor and method of manufacturing the active matrix backplane and the display
05/30/2012CN102479742A 用于集成电路的衬底及其形成方法 IC substrate and forming method used
05/30/2012CN102479738A Trench isolation structure and forming method for same
05/30/2012CN102479721A 晶体管及其形成方法 Transistor and method of forming
05/30/2012CN102479720A 抗击穿漏电流的金属氧化物半导体晶体管及其制造方法 Fight through leakage current metal oxide semiconductor transistor and manufacturing method thereof
05/30/2012CN102479719A 应变记忆作用的半导体器件的制造方法及应力层结构 The method of manufacturing a semiconductor device memory effect of strain and stress layer structure
05/30/2012CN102479713A MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and manufacturing method thereof
05/30/2012CN102479710A 晶体管及其制作方法 Transistor and manufacturing method thereof
05/30/2012CN102479709A 晶体管及其制作方法 Transistor and manufacturing method thereof
05/30/2012CN102479707A 晶体管及其制作方法 Transistor and manufacturing method thereof
05/30/2012CN102479706A 晶体管及其制作方法 Transistor and manufacturing method thereof
05/30/2012CN102479705A Semiconductor device and method for manufacturing semiconductor device
05/30/2012CN102479704A 制造双极晶体管的方法和双极晶体管 The method of manufacturing a bipolar transistor and a bipolar transistor
05/30/2012CN102479703A 异质结双极晶体管制造方法和包括异质结双极晶体管的集成电路 The method of manufacturing a heterojunction bipolar transistor and the integrated circuit comprising the heterojunction bipolar transistor
05/30/2012CN102479696A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/30/2012CN102479677A Semiconductor device and manufacture method thereof
05/30/2012CN102479675A 单晶片加工方法及单晶片 Single wafer processing method and single chip
05/30/2012CN102479263A Large-signal equivalent circuit model of Schottky varactor and parameter extracting method thereof
05/30/2012CN102104048B MOS (Metal Oxide Semiconductor) type ESD (Electro-Static Discharge) protection structure for silicon on insulator technology and manufacturing method thereof
05/30/2012CN101989605B Storage unit structure capable of improving charge retention capacity after multiple erasing and writing periods
05/30/2012CN101931002B Reverse blocking diode thyristor
05/30/2012CN101931001B Asymmetrical fast thyristor
05/30/2012CN101924139B Strain channel field-effect transistor and preparation method thereof
05/30/2012CN101882618B Semiconductor device
05/30/2012CN101866949B Semiconductor epitaxial substrate and method for manufacturing the same
05/30/2012CN101866925B Semiconductor device
05/30/2012CN101836281B Semiconductor device of SOI (silicon on insulator) structure, and its manufacturing method
05/30/2012CN101826532B TFT (Thin Film Transistor)-LCD (Liquid Crystal Display) array baseplate and manufacturing method thereof
05/30/2012CN101807599B Semiconductor device and method of manufacturing the same
05/30/2012CN101800252B Groove-shaped Schottky barrier rectifier and manufacture method thereof
05/30/2012CN101800229B Display device
05/30/2012CN101789430B High-density low-parasitic capacitor
05/30/2012CN101789370B Method of forming HfSiN metal for n-FET applications
05/30/2012CN101783286B Method for manufacturing capacitor of metal-insulator-metal structure
05/30/2012CN101764061B Power metal-oxide-semiconductor field effect transistor structure and processing method thereof
05/30/2012CN101726899B Display device
05/30/2012CN101707210B Anti-radiation field effect transistor, CMOS integrated circuit and preparation thereof
05/30/2012CN101685836B Manufacture method of wafer level upright type diode packaging structure
05/30/2012CN101681933B Oxide semiconductors and thin film transistors comprising the same
05/30/2012CN101673767B Semiconductor device with increased channel area and method for manufacturing the same
05/30/2012CN101641793B Organic field effect transistor
05/30/2012CN101632179B Semiconductor element, method for manufacturing the semiconductor element, and electronic device provided with the semiconductor element
05/30/2012CN101620350B TFT-LCD array substrate and manufacturing method thereof
05/30/2012CN101613074B Micro electro mechanical systems element for measuring three-dimensional vectors
05/30/2012CN101599427B Laser irradiating device and laser irradiating method
05/30/2012CN101578705B Silicon carbide semiconductor device and method for manufacturing the same
05/30/2012CN101552289B Semiconductor device and method for fabricating the same
05/30/2012CN101548384B Low defect carbon substitute monocrystal silicon layer with retrograde carbon profile
05/30/2012CN101546771B Semiconductor device and method of manufacturing the same
05/30/2012CN101540332B Display device and manufacturing method thereof
05/30/2012CN101523613B Deuterated film encapsulation of nonvolatile charge trap memory device
05/30/2012CN101494238B 半导体装置 Semiconductor device
05/30/2012CN101488366B Semiconductor device
05/30/2012CN101389634B Fluorine-containing compound and method for producing same, fluorine-containing polymer, organic thin film, and organic thin film device
05/30/2012CN101304028B Semiconductor device and manufacturing method thereof
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