Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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05/24/2012 | US20120126250 Silicon carbide semiconductor device and method for manufacturing same |
05/24/2012 | US20120126249 Semiconductor device |
05/24/2012 | US20120126248 Membrane having means for state monitoring |
05/24/2012 | US20120126246 Package and high frequency terminal structure for the same |
05/24/2012 | US20120126245 Shallow trench isolation structure and method for forming the same |
05/24/2012 | US20120126244 Shallow trench isolation structure and method for forming the same |
05/24/2012 | US20120126243 Transistor including shallow trench and electrically conductive substrate for improved rf grounding |
05/24/2012 | US20120126240 Wafer level packaged GaN power device and the manufacturing method thereof |
05/24/2012 | US20120126239 Layer structures for controlling stress of heteroepitaxially grown iii-nitride layers |
05/24/2012 | US20120126237 Electro-optical device and electronic apparatus |
05/24/2012 | US20120126236 Array substrate, method for manufacturing array substrate, and display device |
05/24/2012 | US20120126234 Semiconductor Apparatus and Fabrication Method of the Same |
05/24/2012 | US20120126233 Thin film transistor array panel and method for manufacturing the same |
05/24/2012 | US20120126232 Display device and method for manufacturing the same |
05/24/2012 | US20120126227 Interconnection structure and display device including interconnection structure |
05/24/2012 | US20120126226 Semiconductor device and method for manufacturing the same, and electric device |
05/24/2012 | US20120126225 Semiconductor device |
05/24/2012 | US20120126224 Semiconductor memory device |
05/24/2012 | US20120126223 Transistors, methods of manufacturing the same and electronic devices including transistors |
05/24/2012 | US20120126216 Low temperature melt-processing of organic-inorganic hybrid |
05/24/2012 | US20120126200 Nanowhiskers with PN Junctions, Doped Nanowhiskers, and Methods for Preparing Them |
05/24/2012 | US20120126199 Preparing nanoparticles and carbon nanotubes |
05/24/2012 | US20120125916 Temperature control device for optoelectronic devices |
05/24/2012 | US20120125392 TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS |
05/24/2012 | DE112010000455T5 Strukturen und Verfahren zum Verbessern von Grabenabschirmungshalbleitervorrichtungen und Schottky-Barrierengleichrichtervorrichtungen Structures and methods for improving grave shield semiconductor devices and Schottky barrier rectifier devices |
05/24/2012 | DE112009004375T5 Halbleitervorrichtung Semiconductor device |
05/24/2012 | DE10237149B4 Schalt-Vorrichtung eines Röntgenstrahl-Sensors und Verfahren zum Herstellen derselben Switching device of an X-ray sensor and method for manufacturing the same |
05/24/2012 | DE102010051961A1 Thyristorbauelement Thyristor device |
05/24/2012 | DE102010051754A1 Electrical energy store for storing electrical energy generated from e.g. wind turbine, has positive and negative electrodes that are in contact with high and low work function arresters respectively |
05/24/2012 | DE102010040066B4 Verfahren zur Herstellung von Gateelektroden eines Halbleiterbauelements, die durch eine Hartmaske und Doppelbelichtung in Verbindung mit einem Größenreduzierungsabstandshalter hergestellt sind Process for the preparation of gate electrode of a semiconductor device made by a hard mask and double exposure in connection with a reduction in size spacer |
05/24/2012 | DE102006026226B4 Arraysubstrat für ein Flüssigkristalldisplay sowie Herstellverfahren für dieses Array substrate for a liquid crystal display and manufacturing method of this |
05/24/2012 | CA2819469A1 Strained nanowire devices |
05/24/2012 | CA2816909A1 Perforated contact electrode on vertical nanowire array |
05/24/2012 | CA2787098A1 Silicon carbide semiconductor device |
05/23/2012 | EP2455975A2 Amorphous oxide and field effect transistor |
05/23/2012 | EP2455974A1 Semiconductor device, active matrix substrate, and display device |
05/23/2012 | EP2455973A2 Boron aluminum nitride diamond heterostructure |
05/23/2012 | EP2455972A1 IGBT device with buried emitter regions |
05/23/2012 | EP2455964A1 Epitaxial substrate for electronic device using transverse direction as direction of current conduction and manufacturing method therefor |
05/23/2012 | EP2454756A2 High breakdown voltage wide band-gap mos-gated bipolar junction transistors with avalanche capability |
05/23/2012 | EP2454752A1 Semiconductor-on-insulator with backside heat dissipation |
05/23/2012 | EP2454751A1 High-gain wide bandgap darlington transistors and related methods of fabrication |
05/23/2012 | EP1981076B1 Method for manufacturing silicon carbide semiconductor device |
05/23/2012 | EP1815527B1 A mosfet for high voltage applications and a method of fabricating same |
05/23/2012 | EP1636833B1 Method of joining silicon parts with plasma spraying ; corresponding structure |
05/23/2012 | CN202231017U High-frequency semiconductor element |
05/23/2012 | CN202231016U Metal oxide semiconductor field effect transistor(MOSFET) unit |
05/23/2012 | CN202231012U TFT (thin film transistor) array substrate and liquid crystal display |
05/23/2012 | CN1930333B Inorganic nanowires |
05/23/2012 | CN1877741B Method for analyzing critical state mutual action of mult-bit memory unit |
05/23/2012 | CN1862821B Semiconductor device |
05/23/2012 | CN1722388B Method for forming a bottom gate thin film transistor using a blend solution to form a semiconducting layer and an insulating layer |
05/23/2012 | CN1655366B Thin film transistor having ldd structure |
05/23/2012 | CN102473792A Optical sensor, semiconductor device, and liquid crystal panel |
05/23/2012 | CN102473738A 半导体装置 Semiconductor device |
05/23/2012 | CN102473737A 发光显示装置及其制造方法 Light emitting display device and its manufacturing method |
05/23/2012 | CN102473736A 半导体装置、有源矩阵基板以及显示装置 A semiconductor device, an active matrix substrate and a display device |
05/23/2012 | CN102473735A Semiconductor device and method for manufacturing the same |
05/23/2012 | CN102473734A 半导体装置及其制造方法 Semiconductor device and manufacturing method |
05/23/2012 | CN102473733A Semiconductor device and method for manufacturing semiconductor device |
05/23/2012 | CN102473732A Interconnection structure and display device including interconnection structure |
05/23/2012 | CN102473731A 制造半导体器件的方法 The method of manufacturing a semiconductor device |
05/23/2012 | CN102473730A 布线构造及其制造方法、以及具备布线构造的显示装置 Wiring structure and its manufacturing method, and a display device provided with a wiring structure |
05/23/2012 | CN102473729A Method for manufacturing semiconductor device |
05/23/2012 | CN102473728A Method for manufacturing semiconductor device |
05/23/2012 | CN102473727A Oxide semiconductor, thin film transistor array substrate and production method thereof, and display device |
05/23/2012 | CN102473726A Semiconductor device and method for driving same |
05/23/2012 | CN102473725A Field effect transistor with integrated TJBS diode |
05/23/2012 | CN102473724A 晶体管功率开关器件及测量其特性的方法 A transistor power switch device and method of measuring characteristics thereof |
05/23/2012 | CN102473723A 功率用半导体装置及其制造方法 Power semiconductor device and manufacturing method used |
05/23/2012 | CN102473722A Multiple orientation nanowires with gate stack stressors |
05/23/2012 | CN102473721A 半导体装置 Semiconductor device |
05/23/2012 | CN102473720A High performance power switch |
05/23/2012 | CN102473716A 光传感器、半导体器件和液晶面板 An optical sensor, a semiconductor device and a liquid crystal panel |
05/23/2012 | CN102473712A Method for manufacturing optical matrix device |
05/23/2012 | CN102473705A 半导体装置 Semiconductor device |
05/23/2012 | CN102473683A Semiconductor-on-insulator with backside heat dissipation |
05/23/2012 | CN102473682A Nonvolatile semiconductor memory |
05/23/2012 | CN102473679A Semiconductor device and method for manufacturing same |
05/23/2012 | CN102473647A 氮化物半导体装置及其制造方法 The nitride semiconductor device and its manufacturing method |
05/23/2012 | CN102473646A Field effect transistor |
05/23/2012 | CN102473645A 半导体元件、半导体装置以及功率变换器 A semiconductor element, a semiconductor device and power converter |
05/23/2012 | CN102473644A Semiconductor device, method for manufacturing semiconductor device, and display device |
05/23/2012 | CN102473643A Semiconductor device and manufacturing method therefor |
05/23/2012 | CN102473642A 半导体装置及其制造方法 Semiconductor device and manufacturing method |
05/23/2012 | CN102473606A Method for manufacturing crystalline semiconductor film and apparatus for manufacturing crystalline semiconductor film |
05/23/2012 | CN102473602A 欧姆电极及其形成方法 Ohmic electrode and method of forming |
05/23/2012 | CN102473599A Semiconductor chip and process for production thereof |
05/23/2012 | CN102473594A 制造碳化硅衬底的方法和碳化硅衬底 The method of producing a silicon carbide substrate and the silicon carbide substrate |
05/23/2012 | CN102473368A Active matrix substrate and active matrix display device |
05/23/2012 | CN102473362A Method for manufacturing thin film transistor substrate |
05/23/2012 | CN102472678A Semiconductor pressure sensor, pressure sensor device, electronic apparatus, and method for manufacturing semiconductor pressure sensor |
05/23/2012 | CN102471465A 高分子化合物及其制造方法 The polymer compound and a method of manufacturing |
05/23/2012 | CN102471069A Graphene device and method of fabricating a graphene device |
05/23/2012 | CN102468346A 半导体元件 Semiconductor components |
05/23/2012 | CN102468345A 一种异质结势垒变容管及其制备方法 A heterostructure barrier varactors potential and its preparation method |
05/23/2012 | CN102468344A Bidirectional silicon controlled rectifier |
05/23/2012 | CN102468343A 体外散热轴向型塑封功率二极管 Axial heat in vitro plastic power diode |
05/23/2012 | CN102468342A 一种半导体存储单元、器件及其制备方法 A semiconductor memory cell device and a method for preparing |
05/23/2012 | CN102468341A 氧化物半导体薄膜晶体管及其制造方法 Oxide semiconductor thin film transistor and its manufacturing method |