Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2012
08/30/2012WO2012113818A2 Power semiconductor device and method for manufacturing such a power semiconductor device
08/30/2012WO2012113247A1 Method for manufacturing stacked structure of pmos device
08/30/2012WO2011161097A3 Phase control thyristor with improved pattern of local emitter shorts dots
08/30/2012US20120220091 Methods of making power semiconductor devices with thick bottom oxide layer
08/30/2012US20120220089 Compound semiconductor device and method for manufacturing the same
08/30/2012US20120218836 Semiconductor memory device
08/30/2012US20120218819 Nonvolatile semiconductor memory
08/30/2012US20120218796 Compound semiconductor device, method for producing the same, and power supply
08/30/2012US20120218783 Compound semiconductor device and method for manufacturing the same
08/30/2012US20120218485 Active matrix substrate and liquid crystal display panel including the same, and method for manufacturing active matrix substrate
08/30/2012US20120218009 Control circuit of transistor and method
08/30/2012US20120217641 Preventing the Cracking of Passivation Layers on Ultra-Thick Metals
08/30/2012US20120217623 Inter-level dielectric layer, semiconductor device having said inter-level dielectric layer and method for manufacturing the same
08/30/2012US20120217622 Method for Imparting a Controlled Amount of Stress in Semiconductor Devices for Fabricating Thin Flexible Circuits
08/30/2012US20120217621 Structure and method for hard mask removal on an soi substrate without using cmp process
08/30/2012US20120217619 Semiconductor device with triangle prism pillar and method for manufacturing the same
08/30/2012US20120217618 Silicon-Germanium Hydrides and Methods for Making and Using Same
08/30/2012US20120217617 Semi-Polar Wurtzite Group III Nitride Based Semiconductor Layers and Semiconductor Components Based Thereon
08/30/2012US20120217616 Semiconductor device and semiconductor device mounting structure
08/30/2012US20120217615 Grain boundary-insulated semiconductor ceramic, semiconductor ceramic capacitor, and method for producing semiconductor ceramic capacitor
08/30/2012US20120217614 Power convertor device and construction methods
08/30/2012US20120217612 Vertical floating body storage transistors formed in bulk devices and having buried sense and word lines
08/30/2012US20120217610 Bonded Semiconductor Structure With Pyramid-Shaped Alignment Openings and Projections
08/30/2012US20120217609 Semiconductor device and its manufacturing method
08/30/2012US20120217608 Thermoelectric device using semiconductor technology
08/30/2012US20120217599 Magnetic memory devices with thin conductive bridges
08/30/2012US20120217598 Magnetic tunnel junction having coherent tunneling structure
08/30/2012US20120217596 Magnetic tunnel junction and method for fabricating the same
08/30/2012US20120217595 Magnetic latch magnetic random access memory (mram)
08/30/2012US20120217594 Magnetic random access memory
08/30/2012US20120217593 Sensor mounted in flip-chip technology at a substrate edge
08/30/2012US20120217592 semiconductor device and method for forming the same
08/30/2012US20120217591 Semiconductor device and method of manufacturing the same, and power supply apparatus
08/30/2012US20120217590 Filling Narrow Openings Using Ion Beam Etch
08/30/2012US20120217589 Semiconductor structure and method for manufacturing the same
08/30/2012US20120217588 Structure and Method to Enabling A Borderless Contact To Source Regions and Drain Regions Of A Complementary Metal Oxide Semiconductor (CMOS) Transistor
08/30/2012US20120217587 Post cmp planarization by cluster ion beam etch
08/30/2012US20120217583 Semiconductor device and method for forming the same
08/30/2012US20120217582 SOI Semiconductor Device Comprising a Substrate Diode with Reduced Metal Silicide Leakage
08/30/2012US20120217581 Semiconductor device limiting electrical discharge of charge
08/30/2012US20120217580 Semiconductor device with improved on-resistance
08/30/2012US20120217579 High voltage device and manufacturing method thereof
08/30/2012US20120217578 Method and system for metal gate formation with wider metal gate fill margin
08/30/2012US20120217577 Semiconductor device
08/30/2012US20120217576 Semiconductor device and method for forming the same
08/30/2012US20120217575 Method for manufacturing semiconductor device and semiconductor device
08/30/2012US20120217573 Non-volatile memory (nvm) cell for endurance and method of making
08/30/2012US20120217572 Flash Memory Device With an Array of Gate Columns Penetrating Through a Cell Stack
08/30/2012US20120217571 Nonvolatile semiconductor memory device and method for manufacturing same
08/30/2012US20120217570 Semiconductor memory device and method for manufacturing the same
08/30/2012US20120217569 Nonvolatile semiconductor memory device and method for manufacturing the same
08/30/2012US20120217568 Nonvolatile semiconductor memory device and method for manufacturing the same
08/30/2012US20120217567 Semiconductor memory device and manufacturing method thereof
08/30/2012US20120217566 Nonvolatile semiconductor memory device and manufacturing method thereof
08/30/2012US20120217565 Process for obtaining an array of nanodots
08/30/2012US20120217564 Semiconductor charge storage apparatus and methods
08/30/2012US20120217563 Method and system for providing contact to a first polysilicon layer in a flash memory device
08/30/2012US20120217562 Semiconductor device and method of manufacturing the same
08/30/2012US20120217561 Structure And Method For Adjusting Threshold Voltage Of The Array Of Transistors
08/30/2012US20120217557 Semiconductor device
08/30/2012US20120217556 Semiconductor device
08/30/2012US20120217555 Semiconductor device
08/30/2012US20120217554 Semiconductor device and method for fabricating the same
08/30/2012US20120217553 Semiconductor structure and method for forming the same
08/30/2012US20120217551 Junction field effect transistor with region of reduced doping
08/30/2012US20120217548 Thin-film heterostructure thermoelectrics in a group iia and iv-vi materials system
08/30/2012US20120217547 Field effect transistor with reduced gate leakage current
08/30/2012US20120217546 Semiconductor device
08/30/2012US20120217545 Method of producing semiconductor device and semiconductor device
08/30/2012US20120217544 Compound semiconductor device
08/30/2012US20120217543 Compound semiconductor device and method of manufacturing the same
08/30/2012US20120217541 Igbt with integrated mosfet and fast switching diode
08/30/2012US20120217540 Semiconductor device and manufacturing method therefor
08/30/2012US20120217539 Semiconductor Component with Improved Dynamic Behavior
08/30/2012US20120217513 Silicon carbide semiconductor device and manufacturing method thereof
08/30/2012US20120217512 Lateral power transistor device and method of manufacturing the same
08/30/2012US20120217511 Vertical power transistor device, semiconductor die and method of manufacturing a vertical power transistor device
08/30/2012US20120217507 Semiconductor apparatus and method for manufacturing semiconductor apparatus
08/30/2012US20120217506 III-Nitride Heterojunction Devices Having a Multilayer Spacer
08/30/2012US20120217505 Semiconductor device
08/30/2012US20120217504 Nitride based light emitting device using silicon substrate and method of manufacturing the same
08/30/2012US20120217503 METHOD OF MANUFACTURING GaN POWDER AND NITRIDE-BASED LIGHT EMITTING DEVICE USING GaN POWDER MANUFACTURED BY THE METHOD
08/30/2012US20120217502 Display device and manufacturing method of the same
08/30/2012US20120217501 Peeling Method and Method of Manufacturing Semiconductor Device
08/30/2012US20120217499 Semiconductor device and method for manufacturing semiconductor device
08/30/2012US20120217495 Thin-film transistor substrate and method of manufacturing the same
08/30/2012US20120217493 Thin film transistor array panel and manufacturing method thereof
08/30/2012US20120217481 MOSFET with a Nanowire Channel and Fully Silicided (FUSI) Wrapped Around Gate
08/30/2012US20120217480 Method for manufacturing graphene electronics
08/30/2012US20120217479 Nanowire Mesh FET with Multiple Threshold Voltages
08/30/2012US20120217475 Optoelectronic Devices Including Compound Valence-Band Quantum Well Structures
08/30/2012US20120217468 Silicon Nanotube MOSFET
08/30/2012US20120217467 Buried channel finfet sonos with improved p/e cycling endurance
08/30/2012DE112010004205T5 MOSFET mit hohem Betriebsstrom MOSFET with high operating current
08/30/2012DE112010002354T5 3D-Kanalarchitektur für Halbleitervorrichtungen 3D channel architecture for semiconductor devices
08/30/2012DE112010001361T5 Siliziumkarbid-Bipolartransistor Silicon bipolar transistor
08/30/2012DE112005000704B4 Nicht-planarer Bulk-Transistor mit verspanntem Kanal mit erhöhter Mobilität und Verfahren zur Herstellung Non-planar bulk transistor having strained channel with increased mobility and process for preparing
08/30/2012DE102012202961A1 Halbleiterbauelement mit verbessertem Dynamikverhalten Semiconductor device with improved dynamic behavior
08/30/2012DE102011004672A1 SOI-Halbleiterbauelement mit einer Substratdiode mit reduzierter Metallsilizidleckage SOI semiconductor device with a substrate diode with reduced Metallsilizidleckage
08/30/2012DE102010064280B4 Verfahren zur Verringerung der Defektraten in PFET-Transistoren, die ein Si/GE Halbleitermaterial aufweisen, durch Vorsehen einer graduellen Ge-Konzentration, und entsprechende PFET-Transistoren A method of reducing the defect rate in PFET transistors having a Si / Ge semiconductor material, by providing a gradual Ge concentration, and corresponding PFET transistors
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