| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/21/2013 | US20130043526 Method of making an insulated gate semiconductor device with source-substrate connection and structure |
| 02/21/2013 | US20130043525 Semiconductor devices including a vertical channel transistor and methods of fabricating the same |
| 02/21/2013 | US20130043524 Semiconductor device |
| 02/21/2013 | US20130043523 Nonvolatile semiconductor memory device and method of manufacturing the same |
| 02/21/2013 | US20130043521 3-dimensional non-volatile memory device and method of manufacturing the same |
| 02/21/2013 | US20130043519 Semiconductor devices using shaped gate electrodes |
| 02/21/2013 | US20130043518 Semiconductor Device And Method Of Fabricating The Same |
| 02/21/2013 | US20130043517 Semiconductor Structure And Method For Manufacturing The Same |
| 02/21/2013 | US20130043516 Semiconductor Device and Manufacturing Method Thereof |
| 02/21/2013 | US20130043515 Strained Channel Field Effect Transistor and the Method for Fabricating the Same |
| 02/21/2013 | US20130043514 Multiphase ultra low k dielectric material |
| 02/21/2013 | US20130043513 Shallow trench isolation structure and fabricating method thereof |
| 02/21/2013 | US20130043512 Semiconductor Device Manufacturing Methods and Methods of Forming Insulating Material Layers |
| 02/21/2013 | US20130043511 Integrated circuits and methods of forming integrated circuits |
| 02/21/2013 | US20130043510 Structure and method for motion sensor |
| 02/21/2013 | US20130043508 Method for Manufacturing a Low Defect Interface Between a Dielectric and a III-V Compound |
| 02/21/2013 | US20130043507 Semiconductor Device with a Buried Stressor |
| 02/21/2013 | US20130043506 Fin-FET and Method of Forming the Same |
| 02/21/2013 | US20130043505 Apparatuses and methods comprising a channel region having different minority carrier lifetimes |
| 02/21/2013 | US20130043492 Nitride semiconductor transistor |
| 02/21/2013 | US20130043491 Schottky Diodes Including Polysilicon Having Low Barrier Heights |
| 02/21/2013 | US20130043490 Semiconductor device and method for fabricating the device |
| 02/21/2013 | US20130043489 Compound semiconductor device and method for manufacturing the same |
| 02/21/2013 | US20130043488 Epitaxial substrate and method for manufacturing epitaxial substrate |
| 02/21/2013 | US20130043487 LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET |
| 02/21/2013 | US20130043486 System and methods for preparing freestanding films using laser-assisted chemical etch, and freestanding films formed using same |
| 02/21/2013 | US20130043485 GaN-BASED SEMICONDUCTOR DEVICE |
| 02/21/2013 | US20130043484 Hemt with integrated low forward bias diode |
| 02/21/2013 | US20130043483 High linearity hybrid transistor device |
| 02/21/2013 | US20130043482 High linearity bandgap engineered transistor |
| 02/21/2013 | US20130043480 Exposure Device, Exposure Method and Method of Manufacturing Semiconductor Device |
| 02/21/2013 | US20130043479 Thin film transistor substrate and method for fabricating the same |
| 02/21/2013 | US20130043476 Thin film transistor substrate and display device comprising the same |
| 02/21/2013 | US20130043475 Transistors and electronic devices including the transistors |
| 02/21/2013 | US20130043474 Active array substrate and method for manufacturing the same |
| 02/21/2013 | US20130043473 Display substrate and method of manufacturing the same |
| 02/21/2013 | US20130043471 Magnetic tunnel junction for MRAM applications |
| 02/21/2013 | US20130043469 Thin-Film Transistor and Method for Manufacturing the Same |
| 02/21/2013 | US20130043468 Vertical field effect transistor on oxide semiconductor substrate |
| 02/21/2013 | US20130043467 Thin film device and manufacturing method thereof |
| 02/21/2013 | US20130043466 Semiconductor device and method for manufacturing the same |
| 02/21/2013 | US20130043465 Semiconductor device |
| 02/21/2013 | US20130043464 Thin film transistor, pixel structure and method for fabricating the same |
| 02/21/2013 | US20130043459 Long Wavelength Infrared Superlattice |
| 02/21/2013 | US20130043458 Long Wavelength Infrared Superlattice |
| 02/21/2013 | DE112010005546T5 Halbleitervorrichtung Semiconductor device |
| 02/21/2013 | DE10394374B4 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same |
| 02/21/2013 | DE102012200236B3 Method for structuring silicon carbide for e.g. silicon carbide-trench-MOSFET, involves reperforming anisotropic plasma etching step such that passivation layer is removed from trench bottom, and forming enlarged trench region in substrate |
| 02/21/2013 | DE102012107523A1 HEMT mit integrierter Diode mit niedriger Durchlassvorspannung HEMT with integrated diode with low forward bias |
| 02/21/2013 | DE102010053297B4 Halbleiterbauelement mit reduziertem Oberflächenfeldeffekt und Verfahren zu dessen Fertigung A semiconductor device with reduced surface field effect and process for its manufacturing |
| 02/21/2013 | DE102005010337B4 Bauelementanordnung mit einem Bipolartransistor und einem Lastunterbrechungsdetektor Component arrangement with a bipolar transistor and a load interruption detector |
| 02/20/2013 | EP2560210A1 Semiconductor device and manufacturing method thereof |
| 02/20/2013 | EP2560209A1 Buffered Finfet Device |
| 02/20/2013 | EP2560206A1 Semiconductor device |
| 02/20/2013 | EP2560195A1 Memory device with an isolated gate comprising two portions separated by a barrier and method of operating the same |
| 02/20/2013 | EP2560194A1 Silicon carbide semiconductor device and method for manufacturing same |
| 02/20/2013 | EP2560153A1 Display panel |
| 02/20/2013 | EP2560133A1 Quantum information processing |
| 02/20/2013 | EP2559720A1 Crosslinked composition |
| 02/20/2013 | CN202749375U Semiconductor device with self-charging field plate |
| 02/20/2013 | CN202749363U High-power whole wafer insulated gate bipolar transistor (IGBT) packaging structure |
| 02/20/2013 | CN102939659A Semiconductor device and method for manufacturing the same |
| 02/20/2013 | CN102939658A 薄膜晶体管及其制造方法 A thin film transistor and its manufacturing method |
| 02/20/2013 | CN102939657A Low resistivity tungsten pvd with enhanced ionization and RF power coupling |
| 02/20/2013 | CN102939650A 半导体装置 Semiconductor device |
| 02/20/2013 | CN102939649A Semiconductor device and method for manufacturing same |
| 02/20/2013 | CN102938421A Silicon carbide junction barrier Schottky diode device with trapezoid terminals |
| 02/20/2013 | CN102938420A 无定形氧化物和场效应晶体管 Amorphous oxide, and field-effect transistors |
| 02/20/2013 | CN102938419A Transistor with self-aligned silicide and manufacturing method thereof |
| 02/20/2013 | CN102938418A Silicon-on-insulator (SOI) device capable of restraining back gate leakage current caused by radiation and preparation method of SOI device |
| 02/20/2013 | CN102938417A Split-gate type groove power metal oxide semiconductor (MOS) device |
| 02/20/2013 | CN102938416A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/20/2013 | CN102938415A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/20/2013 | CN102938414A Groove type power semiconductor component and production method thereof |
| 02/20/2013 | CN102938413A AlGaN/GaN异质结增强型器件及其制作方法 AlGaN / GaN heterostructure enhanced device and manufacturing method thereof |
| 02/20/2013 | CN102938412A Semiconductor transistor device |
| 02/20/2013 | CN102938406A Split gate type flash memory and forming method thereof |
| 02/20/2013 | CN102938403A Low-voltage trigger SCR (silicon controlled rectifier) device used for ESD (electron static discharge) protection |
| 02/20/2013 | CN102938378A Semiconductor device and manufacturing method thereof |
| 02/20/2013 | CN102938377A Semiconductor structure, forming method of semiconductor structure, P-channel metal oxide semiconductor (PMOS) transistor and forming method of P-channel metal oxide semiconductor transistor |
| 02/20/2013 | CN102938376A Metal-oxide-semiconductor field-effect transistor (MOSFET) and forming method thereof |
| 02/20/2013 | CN102938375A Field effect transistor and forming method thereof |
| 02/20/2013 | CN102290439B InAIN/ GaN HEM device with etch stop layer |
| 02/20/2013 | CN102194869B Ultra-steep reverse doped metal oxide semiconductor (MOS) device with improved anti-irradiation property |
| 02/20/2013 | CN102148162B Laterally diffused metal oxide semiconductor transistor and method of fabricating the same |
| 02/20/2013 | CN102110609B High-performance semiconductor device and forming method thereof |
| 02/20/2013 | CN102005458B Integrated circuit device, memory device and manufacturing method thereof |
| 02/20/2013 | CN102005377B Fabrication of trench DMOS device having thick bottom shielding oxide |
| 02/20/2013 | CN101842317B A deposit and electrical devices comprising the same |
| 02/20/2013 | CN101567380B Organic light emitting display device and method of manufacturing same |
| 02/19/2013 | US8379684 Hole blocking layers in non-polar and semi-polar green light emitting devices |
| 02/19/2013 | US8378776 Semiconductor structure with galvanically-isolated signal and power paths |
| 02/19/2013 | US8378734 Method and system for reduction of off-current in field effect transistors |
| 02/19/2013 | US8378506 Packaged electronic device having metal comprising self-healing die attach material |
| 02/19/2013 | US8378502 Integrated circuit package system with image sensor system |
| 02/19/2013 | US8378500 Stacked semiconductor device including a serial path |
| 02/19/2013 | US8378499 Semiconductor storage device |
| 02/19/2013 | US8378498 Chip assembly with a coreless substrate employing a patterned adhesive layer |
| 02/19/2013 | US8378497 Contact structures and semiconductor devices including the same |
| 02/19/2013 | US8378492 Semiconductor package |