Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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06/12/2013 | EP2602821A1 Graphene-based nanodevices for terahertz electronics |
06/12/2013 | EP2601735A1 Rectifier arrangement having schottky diodes |
06/12/2013 | EP2601681A1 Integrated fin-based field effect transistor (finfet) and method of fabrication of same |
06/12/2013 | EP2601680A1 High electron mobility transistors with field plate electrode |
06/12/2013 | EP2601678A1 Manufacturing of scalable gate length high electron mobility transistors |
06/12/2013 | CN202996845U Schottky diode |
06/12/2013 | CN202996844U Double-step table top type diode chip |
06/12/2013 | CN202996843U Novel solar diode assembly structure |
06/12/2013 | CN202996842U Surface mounted type bidirectional trigger diode chip |
06/12/2013 | CN202996841U Thyristor type diode chip |
06/12/2013 | CN202996812U Diode with three-layer medium passivation structure |
06/12/2013 | CN202995188U Storage capacitor for liquid crystal display |
06/12/2013 | CN103155156A Semiconductor device and method for producing same |
06/12/2013 | CN103155155A Semiconductor device and method for manufacturing same |
06/12/2013 | CN103155154A Semiconductor thin film, thin film transistor and production method therefor |
06/12/2013 | CN103155153A Semiconductor device, display device, and method for manufacturing semiconductor device and display device |
06/12/2013 | CN103155152A Vertical-type semiconductor device |
06/12/2013 | CN103155124A 氮化物半导体装置 The nitride semiconductor device |
06/12/2013 | CN103155123A Method and structure for pFET junction profile with SiGe channel |
06/12/2013 | CN103155122A Fabrication of replacement metal gate devices |
06/12/2013 | CN103155121A Method for manufacturing semiconductor device |
06/12/2013 | CN103155111A Chemical mechanical planarization processes for fabrication of FinFET devices |
06/12/2013 | CN103155105A Method for producing semiconductor device |
06/12/2013 | CN103154007A Anthra[2,3-b:7,6b']dithiophene derivatives and their use as organic semiconductors |
06/12/2013 | CN103154005A Nitrogenated aromatic compound, organic semiconductor material, and organic electronic device |
06/12/2013 | CN103153865A Composition for production of oxide thin films and method for producing oxide thin films by using said composition |
06/12/2013 | CN103151393A Electrode structure of PIN diode |
06/12/2013 | CN103151392A Vertical gallium nitride-based heterojunction field effect transistor with p type gallium nitride buried layer |
06/12/2013 | CN103151391A Short gate tunneling field effect transistor of vertical non-uniform doping channel and preparation method thereof |
06/12/2013 | CN103151390A Tunneling field effect transistor |
06/12/2013 | CN103151389A Thin film transistor and manufacture method of thin film transistor |
06/12/2013 | CN103151388A Polysilicon TFT (thin film transistor), preparation method thereof and array substrate |
06/12/2013 | CN103151387A Semiconductor device and method for manufacturing the same |
06/12/2013 | CN103151386A Laterally diffused metal oxide semiconductor device and manufacturing method thereof |
06/12/2013 | CN103151385A NMOS (N-Channel Metal Oxide Semiconductor) and PMOS (P-Channel Metal Oxide Semiconductor) device structures and design method |
06/12/2013 | CN103151384A Semiconductor device and manufacturing method thereof |
06/12/2013 | CN103151383A U-shaped channel tunneling transistor with laminated structure and preparation method thereof |
06/12/2013 | CN103151382A A method for preparing asymmetric polycrystalline silicon grid electrodes for optimizing terminating design in a groove power mosfet |
06/12/2013 | CN103151381A Groove type semiconductor power device and manufacturing method and terminal protection structure thereof |
06/12/2013 | CN103151380A Groove-type semiconductor power device, manufacture method thereof and terminal protective structure |
06/12/2013 | CN103151379A Corner layout for superjunction device |
06/12/2013 | CN103151378A Thin film transistors using thin film semiconductor materials |
06/12/2013 | CN103151377A Lateral transistor component and method for producing same |
06/12/2013 | CN103151376A Trench-gate RESURF semiconductor device and manufacturing method |
06/12/2013 | CN103151375A Integrated mos power transistor with thin grid oxide layer and low grid charge |
06/12/2013 | CN103151374A High electron mobility transistor |
06/12/2013 | CN103151373A Semiconductor device for expanding safety operation area |
06/12/2013 | CN103151372A Semiconductor structure with enhanced cap and fabrication method thereof |
06/12/2013 | CN103151371A Wafer structure and power device by using same |
06/12/2013 | CN103151370A Compound semiconductor device and manufacturing method of the same |
06/12/2013 | CN103151358A Thin film transistor and array substrate including the same |
06/12/2013 | CN103151353A Metal gate features of semiconductor die |
06/12/2013 | CN103151310A Deeply-grooved power MOS (Metal Oxide Semiconductor) device and production method thereof |
06/12/2013 | CN103151309A Deeply-grooved power MOS (Metal Oxide Semiconductor) device and preparation method thereof |
06/12/2013 | CN103151304A An array substrate of a display panel and a manufacture method thereof |
06/12/2013 | CN103151268A Vertical double-diffused field-effect tube and manufacturing process thereof |
06/12/2013 | CN103151265A Manufacturing method of silicon (Si) substrate upper side grid grapheme field effect tube based on copper (Cu) film annealing |
06/12/2013 | CN103151262A Planar insulated gate bipolar transistor and preparation method thereof |
06/12/2013 | CN103151261A Trench schottky diode and manufacturing method thereof |
06/12/2013 | CN103151255A Semiconductor grid structure and formation method thereof |
06/12/2013 | CN103151253A Method for making signal wire, thin film transistor, array substrate and display device |
06/12/2013 | CN103151251A Groove type insulated gate bipolar transistor and preparation method thereof |
06/12/2013 | CN103151246A Side grid grapheme transistor manufacturing method based on copper (Cu) film annealing and chlorine reaction |
06/12/2013 | CN103149760A Thin film transistor array substrate, manufacturing method and display device |
06/12/2013 | CN103149754A TFT (Thin Film Transistor) liquid crystal display device and manufacturing method thereof |
06/12/2013 | CN102629589B Array substrate and manufacturing method thereof, and display apparatus |
06/12/2013 | CN102468329B Silicon germanium heterojunction bipolar transistor multi-fingered structure |
06/12/2013 | CN102412275B Vertical PNP device in SiGe BiCMOS technology and manufacturing method thereof |
06/12/2013 | CN102412263B Semiconductor device with pre-metal dielectric filling structure and preparation method thereof |
06/12/2013 | CN102376757B Transverse parasitic PNP device in SiGe HBT technology and manufacture method thereof |
06/12/2013 | CN102299154B 半导体结构及其制作方法 The semiconductor structure and method of making |
06/12/2013 | CN102244102B Electron tunneling based enclosure type grid control metal-insulator device |
06/12/2013 | CN102231391B Quantum-effect device based on MIS (Metal-Insulator-Semiconductor) structure |
06/12/2013 | CN102222692B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
06/12/2013 | CN102214683B Semiconductor structure having suspended source and suspended drain, and formation method of semiconductor structure |
06/12/2013 | CN102214681B Semiconductor structure and formation method thereof |
06/12/2013 | CN102208437B Semiconductor device and method of making the same |
06/12/2013 | CN102169835B Integrated circuit device and method for fabricating the integrated circuit device |
06/12/2013 | CN102138217B Power MOSFET with a gate structure of different material |
06/12/2013 | CN102082175B 集成电路结构 Integrated circuit structure |
06/12/2013 | CN102074582B Integrated circuit structure and formation method thereof |
06/12/2013 | CN102017159B Silicon carbide semiconductor device and process for producing the silicon carbide semiconductor device |
06/12/2013 | CN101861652B Semiconductor device with (110)-oriented silicon |
06/12/2013 | CN101720510B Junction diode with reduced reverse current |
06/12/2013 | CN101689532B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
06/12/2013 | CN101636845B Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region |
06/12/2013 | CN101553931B Structure and method for forming a planar schottky contact |
06/12/2013 | CN101221950B Resistor structure and its forming method |
06/12/2013 | CN101207155B Floating body memory cell having gates favoring different conductivity type regions |
06/11/2013 | USRE44292 Method of etching silicon nitride by a mixture of CH2F2, CH3F or CHF3 and an inert gas |
06/11/2013 | US8462401 Light source apparatus, light irradiating apparatus provided with same light source apparatus, image reading apparatus provided with same light irradiating apparatus, and image forming apparatus provided with same image reading apparatus |
06/11/2013 | US8462281 Array substrate for liquid crystal display device with storage electrodes on the semiconductor layer and method of fabricating the same |
06/11/2013 | US8462249 Solid-state imaging device, method of manufacturing the same, and electronic apparatus |
06/11/2013 | US8461862 Quantum processor |
06/11/2013 | US8461696 Substrate for semiconductor package, semiconductor package including the same, and stack package using the semiconductor package |
06/11/2013 | US8461695 Grain refinement by precipitate formation in Pb-free alloys of tin |
06/11/2013 | US8461693 Substrate arrangement |
06/11/2013 | US8461691 Chip-packaging module for a chip and a method for forming a chip-packaging module |
06/11/2013 | US8461690 Semiconductor device capable of suppressing generation of cracks in semiconductor chip during manufacturing process |
06/11/2013 | US8461688 Semiconductor device and method of manufacturing the same |