Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2013
06/12/2013EP2602821A1 Graphene-based nanodevices for terahertz electronics
06/12/2013EP2601735A1 Rectifier arrangement having schottky diodes
06/12/2013EP2601681A1 Integrated fin-based field effect transistor (finfet) and method of fabrication of same
06/12/2013EP2601680A1 High electron mobility transistors with field plate electrode
06/12/2013EP2601678A1 Manufacturing of scalable gate length high electron mobility transistors
06/12/2013CN202996845U Schottky diode
06/12/2013CN202996844U Double-step table top type diode chip
06/12/2013CN202996843U Novel solar diode assembly structure
06/12/2013CN202996842U Surface mounted type bidirectional trigger diode chip
06/12/2013CN202996841U Thyristor type diode chip
06/12/2013CN202996812U Diode with three-layer medium passivation structure
06/12/2013CN202995188U Storage capacitor for liquid crystal display
06/12/2013CN103155156A Semiconductor device and method for producing same
06/12/2013CN103155155A Semiconductor device and method for manufacturing same
06/12/2013CN103155154A Semiconductor thin film, thin film transistor and production method therefor
06/12/2013CN103155153A Semiconductor device, display device, and method for manufacturing semiconductor device and display device
06/12/2013CN103155152A Vertical-type semiconductor device
06/12/2013CN103155124A 氮化物半导体装置 The nitride semiconductor device
06/12/2013CN103155123A Method and structure for pFET junction profile with SiGe channel
06/12/2013CN103155122A Fabrication of replacement metal gate devices
06/12/2013CN103155121A Method for manufacturing semiconductor device
06/12/2013CN103155111A Chemical mechanical planarization processes for fabrication of FinFET devices
06/12/2013CN103155105A Method for producing semiconductor device
06/12/2013CN103154007A Anthra[2,3-b:7,6b']dithiophene derivatives and their use as organic semiconductors
06/12/2013CN103154005A Nitrogenated aromatic compound, organic semiconductor material, and organic electronic device
06/12/2013CN103153865A Composition for production of oxide thin films and method for producing oxide thin films by using said composition
06/12/2013CN103151393A Electrode structure of PIN diode
06/12/2013CN103151392A Vertical gallium nitride-based heterojunction field effect transistor with p type gallium nitride buried layer
06/12/2013CN103151391A Short gate tunneling field effect transistor of vertical non-uniform doping channel and preparation method thereof
06/12/2013CN103151390A Tunneling field effect transistor
06/12/2013CN103151389A Thin film transistor and manufacture method of thin film transistor
06/12/2013CN103151388A Polysilicon TFT (thin film transistor), preparation method thereof and array substrate
06/12/2013CN103151387A Semiconductor device and method for manufacturing the same
06/12/2013CN103151386A Laterally diffused metal oxide semiconductor device and manufacturing method thereof
06/12/2013CN103151385A NMOS (N-Channel Metal Oxide Semiconductor) and PMOS (P-Channel Metal Oxide Semiconductor) device structures and design method
06/12/2013CN103151384A Semiconductor device and manufacturing method thereof
06/12/2013CN103151383A U-shaped channel tunneling transistor with laminated structure and preparation method thereof
06/12/2013CN103151382A A method for preparing asymmetric polycrystalline silicon grid electrodes for optimizing terminating design in a groove power mosfet
06/12/2013CN103151381A Groove type semiconductor power device and manufacturing method and terminal protection structure thereof
06/12/2013CN103151380A Groove-type semiconductor power device, manufacture method thereof and terminal protective structure
06/12/2013CN103151379A Corner layout for superjunction device
06/12/2013CN103151378A Thin film transistors using thin film semiconductor materials
06/12/2013CN103151377A Lateral transistor component and method for producing same
06/12/2013CN103151376A Trench-gate RESURF semiconductor device and manufacturing method
06/12/2013CN103151375A Integrated mos power transistor with thin grid oxide layer and low grid charge
06/12/2013CN103151374A High electron mobility transistor
06/12/2013CN103151373A Semiconductor device for expanding safety operation area
06/12/2013CN103151372A Semiconductor structure with enhanced cap and fabrication method thereof
06/12/2013CN103151371A Wafer structure and power device by using same
06/12/2013CN103151370A Compound semiconductor device and manufacturing method of the same
06/12/2013CN103151358A Thin film transistor and array substrate including the same
06/12/2013CN103151353A Metal gate features of semiconductor die
06/12/2013CN103151310A Deeply-grooved power MOS (Metal Oxide Semiconductor) device and production method thereof
06/12/2013CN103151309A Deeply-grooved power MOS (Metal Oxide Semiconductor) device and preparation method thereof
06/12/2013CN103151304A An array substrate of a display panel and a manufacture method thereof
06/12/2013CN103151268A Vertical double-diffused field-effect tube and manufacturing process thereof
06/12/2013CN103151265A Manufacturing method of silicon (Si) substrate upper side grid grapheme field effect tube based on copper (Cu) film annealing
06/12/2013CN103151262A Planar insulated gate bipolar transistor and preparation method thereof
06/12/2013CN103151261A Trench schottky diode and manufacturing method thereof
06/12/2013CN103151255A Semiconductor grid structure and formation method thereof
06/12/2013CN103151253A Method for making signal wire, thin film transistor, array substrate and display device
06/12/2013CN103151251A Groove type insulated gate bipolar transistor and preparation method thereof
06/12/2013CN103151246A Side grid grapheme transistor manufacturing method based on copper (Cu) film annealing and chlorine reaction
06/12/2013CN103149760A Thin film transistor array substrate, manufacturing method and display device
06/12/2013CN103149754A TFT (Thin Film Transistor) liquid crystal display device and manufacturing method thereof
06/12/2013CN102629589B Array substrate and manufacturing method thereof, and display apparatus
06/12/2013CN102468329B Silicon germanium heterojunction bipolar transistor multi-fingered structure
06/12/2013CN102412275B Vertical PNP device in SiGe BiCMOS technology and manufacturing method thereof
06/12/2013CN102412263B Semiconductor device with pre-metal dielectric filling structure and preparation method thereof
06/12/2013CN102376757B Transverse parasitic PNP device in SiGe HBT technology and manufacture method thereof
06/12/2013CN102299154B 半导体结构及其制作方法 The semiconductor structure and method of making
06/12/2013CN102244102B Electron tunneling based enclosure type grid control metal-insulator device
06/12/2013CN102231391B Quantum-effect device based on MIS (Metal-Insulator-Semiconductor) structure
06/12/2013CN102222692B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
06/12/2013CN102214683B Semiconductor structure having suspended source and suspended drain, and formation method of semiconductor structure
06/12/2013CN102214681B Semiconductor structure and formation method thereof
06/12/2013CN102208437B Semiconductor device and method of making the same
06/12/2013CN102169835B Integrated circuit device and method for fabricating the integrated circuit device
06/12/2013CN102138217B Power MOSFET with a gate structure of different material
06/12/2013CN102082175B 集成电路结构 Integrated circuit structure
06/12/2013CN102074582B Integrated circuit structure and formation method thereof
06/12/2013CN102017159B Silicon carbide semiconductor device and process for producing the silicon carbide semiconductor device
06/12/2013CN101861652B Semiconductor device with (110)-oriented silicon
06/12/2013CN101720510B Junction diode with reduced reverse current
06/12/2013CN101689532B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
06/12/2013CN101636845B Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region
06/12/2013CN101553931B Structure and method for forming a planar schottky contact
06/12/2013CN101221950B Resistor structure and its forming method
06/12/2013CN101207155B Floating body memory cell having gates favoring different conductivity type regions
06/11/2013USRE44292 Method of etching silicon nitride by a mixture of CH2F2, CH3F or CHF3 and an inert gas
06/11/2013US8462401 Light source apparatus, light irradiating apparatus provided with same light source apparatus, image reading apparatus provided with same light irradiating apparatus, and image forming apparatus provided with same image reading apparatus
06/11/2013US8462281 Array substrate for liquid crystal display device with storage electrodes on the semiconductor layer and method of fabricating the same
06/11/2013US8462249 Solid-state imaging device, method of manufacturing the same, and electronic apparatus
06/11/2013US8461862 Quantum processor
06/11/2013US8461696 Substrate for semiconductor package, semiconductor package including the same, and stack package using the semiconductor package
06/11/2013US8461695 Grain refinement by precipitate formation in Pb-free alloys of tin
06/11/2013US8461693 Substrate arrangement
06/11/2013US8461691 Chip-packaging module for a chip and a method for forming a chip-packaging module
06/11/2013US8461690 Semiconductor device capable of suppressing generation of cracks in semiconductor chip during manufacturing process
06/11/2013US8461688 Semiconductor device and method of manufacturing the same