Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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06/26/2013 | CN103178119A Array substrate, method for preparing array substrate and display device |
06/26/2013 | CN103178118A Method for manufacturing semiconductor device |
06/26/2013 | CN103178117A Bipolar type thin film transistor and production method thereof |
06/26/2013 | CN103178116A Transistor with modified grid structure |
06/26/2013 | CN103178115A Semiconductor device and method of manufacturing the same |
06/26/2013 | CN103178114A Insulated gate bipolar transistor structure having low substrate leakage |
06/26/2013 | CN103178113A Semiconductor device and method of manufacturing the same |
06/26/2013 | CN103178112A 晶体管结构 Transistor structure |
06/26/2013 | CN103178111A Deep groove structure and production method thereof |
06/26/2013 | CN103178110A Deep trench structure in super junction technique and manufacturing method thereof |
06/26/2013 | CN103178109A High voltage isolation n-type Lateral Double-Diffused Metal Oxide Semiconductor (NLDMOS) structure and manufacture method thereof |
06/26/2013 | CN103178108A Compound semiconductor device with buried field plate |
06/26/2013 | CN103178107A High electron mobility transistor structure with improved breakdown voltage performance |
06/26/2013 | CN103178106A Shield wrap for heterostructure field effect transistor |
06/26/2013 | CN103178105A Native NMOS (N-channel metal oxide semiconductor) low-voltage-trigged SCR (semiconductor control rectifier) device for ESD (electro-static discharge) protection |
06/26/2013 | CN103178104A Semiconductor device multistage field plate terminal structure and manufacturing method thereof |
06/26/2013 | CN103178103A Semiconductor device and method of manufacturing the same |
06/26/2013 | CN103178102A Insulated gate bipolar transistor (IGBT) and producing method thereof |
06/26/2013 | CN103178101A Insulated gate bipolar transistor (IGBT) and producing method |
06/26/2013 | CN103178100A Vertical plug and play (PNP) type triode and production method thereof |
06/26/2013 | CN103178099A MIS type semiconductor device and production method therefor |
06/26/2013 | CN103178098A Gate structure and forming method of same |
06/26/2013 | CN103178097A Dummy gate for a high voltage transistor device |
06/26/2013 | CN103178096A Non-self-calibration nonvolatile memory structure |
06/26/2013 | CN103178095A High temperature schottky diode |
06/26/2013 | CN103178094A Layout structure with lightly-doped drain structure |
06/26/2013 | CN103178093A High-voltage junction field effect transistor structure and manufacture method |
06/26/2013 | CN103178092A Structure and production method of ultrahigh-voltage LDMOS (laterally diffused metal oxide semiconductor) device |
06/26/2013 | CN103178091A Lateral diffusion metal oxide semiconductor transistor and manufacture method thereof |
06/26/2013 | CN103178090A 3-terminal electronic device and 2-terminal electronic device |
06/26/2013 | CN103178089A Transistor structure and method for preparing the same |
06/26/2013 | CN103178088A Semiconductor device and fabricating method thereof |
06/26/2013 | CN103178087A Ultra-high voltage LDMOS (Laterally Diffused Metal Oxide Semiconductor) device structure and production method thereof |
06/26/2013 | CN103178086A VPNP (Vertical Positive-Negative-Positive) device in SiGe (Silicon-germanium) HBT (Heterojunction Bipolar Transistor) technology and manufacturing method thereof |
06/26/2013 | CN103178068A Non-volatile memory device and method for fabricating the same |
06/26/2013 | CN103178063A Silicon Oxide Nitride Oxide Semiconductor (SONOS) memory |
06/26/2013 | CN103178062A Metal nanocrystalline storage |
06/26/2013 | CN103178059A Power semiconductor device |
06/26/2013 | CN103178057A 显示器及电子单元 Displays and electronic unit |
06/26/2013 | CN103178012A CMOS devices with metal gates and methods for forming the same |
06/26/2013 | CN103178011A Complementary metal oxide semiconductor (CMOS) and forming method thereof |
06/26/2013 | CN103178007A Scribing method, chip manufacturing method and convex glass packaging diode |
06/26/2013 | CN103177971A NMOS (N-channel metal oxide semiconductor) device, with GaAs material growing in silicon grooves, based on ART (aspect radio trapping ) structure |
06/26/2013 | CN103177967A Semiconductor devices and methods of forming the same |
06/26/2013 | CN103177966A Transistor and production method thereof |
06/26/2013 | CN103177964A LDMOS (Laterally Diffused Metal Oxide Semiconductor) with selective shallow slot through hole and production method thereof |
06/26/2013 | CN103177960A Substrate breakdown voltage improvement for group iii-nitride on silicon substrate |
06/26/2013 | CN103177959A Diode for preventing stress from being acted on chip and manufacture method thereof |
06/26/2013 | CN103177958A Integrated Schottky diode and manufacturing method thereof |
06/26/2013 | CN103177951A Gate structure for semiconductor device |
06/26/2013 | CN103177941A Manufacturing method of semiconductor device |
06/26/2013 | CN103177935A Method for manufacturing a flexible structure by transfers of layers and middle structure and flexible structure |
06/26/2013 | CN103173857A Silicon single crystal substrate and method of manufacturing the same |
06/26/2013 | CN102420102B Method used for forming MIM (metal-insulator-metal) capacitor structure and MIM capacitor |
06/26/2013 | CN102376781B Semiconductor varactor assembly and varactor assembly |
06/26/2013 | CN102376769B Ultrathin transistor and manufacturing method thereof |
06/26/2013 | CN102208416B Semiconductor memory device |
06/26/2013 | CN102194885B N-type buried-channel silicon carbide metal oxide semiconductor field effect transistor (DEMOSFET) device and preparation method thereof |
06/26/2013 | CN102017162B Integrated low leakage schottky diode |
06/26/2013 | CN102005474B Semiconductor device and method for manufacturing the same |
06/26/2013 | CN101981675B Laminated structure, method of manufacturing a laminated structure, electronic element, electronic element array, image displaying medium, and image displaying device |
06/26/2013 | CN101960607B Semiconductor device, method for manufacturing semiconductor device, and display device |
06/26/2013 | CN101852763B Chiral sensor based on field effect transistor and preparation method thereof |
06/26/2013 | CN101471383B Nonvolatile semiconductor memory device, method for manufacturing the same, and nonvolatile memory array |
06/26/2013 | CN101449370B Memory system with switch element |
06/26/2013 | CN101314470B Carbon nanotube having improved conductivity, process of preparing the same, and electrode comprising the carbon nanotube |
06/25/2013 | US8472911 Wireless communication system |
06/25/2013 | US8472647 Package for micro-electro-mechanical acoustic transducer with improved double side mountable electrodes |
06/25/2013 | US8472251 Single-polycrystalline silicon electrically erasable and programmable nonvolatile memory device |
06/25/2013 | US8471986 Electro-optical device and electronic apparatus comprising an address line |
06/25/2013 | US8471573 Dynamic quantity sensor and manufacturing method thereof |
06/25/2013 | US8471389 Multiple selectable function integrated circuit module |
06/25/2013 | US8471387 Extendable network structure |
06/25/2013 | US8471383 Semiconductor package and fabrication method thereof |
06/25/2013 | US8471378 Power semiconductor device and method therefor |
06/25/2013 | US8471368 Polysilicon control etch back indicator |
06/25/2013 | US8471367 Semiconductor device and method for manufacturing semiconductor device |
06/25/2013 | US8471366 Nitride semiconductor substrate |
06/25/2013 | US8471365 Nitride semiconductor substrate, semiconductor device, and methods for manufacturing nitride semiconductor substrate and semiconductor device |
06/25/2013 | US8471361 Integrated chip package structure using organic substrate and method of manufacturing the same |
06/25/2013 | US8471360 Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same |
06/25/2013 | US8471359 Semiconductor device and method of fabricating the same |
06/25/2013 | US8471343 Parasitic capacitance reduction in MOSFET by airgap ild |
06/25/2013 | US8471338 Dual polysilicon gate of a semiconductor device with a multi-plane channel |
06/25/2013 | US8471337 Integrated circuit |
06/25/2013 | US8471336 Semiconductor integrated circuit including transistor having diffusion layer formed at outside of element isolation region for preventing soft error |
06/25/2013 | US8471334 Lateral power MOSFET device having a liner layer formed along the current path to reduce electric resistance and method for manufacturing the same |
06/25/2013 | US8471332 Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout |
06/25/2013 | US8471331 Method of making an insulated gate semiconductor device with source-substrate connection and structure |
06/25/2013 | US8471330 MOS device resistant to ionizing radiation |
06/25/2013 | US8471329 Tunnel FET and methods for forming the same |
06/25/2013 | US8471328 Non-volatile memory and manufacturing method thereof |
06/25/2013 | US8471327 Nonvolatile semiconductor memory transistor and method for manufacturing nonvolatile semiconductor memory |
06/25/2013 | US8471325 Nonvolatile memory device and method for manufacturing the same |
06/25/2013 | US8471324 Semiconductor device |
06/25/2013 | US8471323 3-D electrically programmable and erasable single-transistor non-volatile semiconductor memory device |
06/25/2013 | US8471322 Semiconductor device and manufacturing method thereof |
06/25/2013 | US8471321 Semiconductor device comprising capacitor and method of fabricating the same |
06/25/2013 | US8471320 Memory layout structure |
06/25/2013 | US8471319 Semiconductor device having multilayered interelectrode insulating film |