| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/30/2013 | US20130134508 Semiconductor device with side-junction and method for fabricating the same |
| 05/30/2013 | US20130134507 Semiconductor device including shared pillar lower diffusion layer |
| 05/30/2013 | US20130134506 Semiconductor device and manufacturing method of same |
| 05/30/2013 | US20130134505 Semiconductor device for power and method of manufacture thereof |
| 05/30/2013 | US20130134504 Semiconductor device and method of manufacturing the same |
| 05/30/2013 | US20130134503 Cross-point diode arrays and methods of manufacturing cross-point diode arrays |
| 05/30/2013 | US20130134501 Method of manufacturing a vertical-type semiconductor device and method of operating a vertical-type semiconductor device |
| 05/30/2013 | US20130134500 Power semiconductor device |
| 05/30/2013 | US20130134499 Nonvolatile programmable switches |
| 05/30/2013 | US20130134498 Memory device and method for fabricating the same |
| 05/30/2013 | US20130134497 Memory device and method for fabricating the same |
| 05/30/2013 | US20130134496 Semiconductor devices and methods of manufacturing the semiconductor devices |
| 05/30/2013 | US20130134495 Flash memory and method for forming the same |
| 05/30/2013 | US20130134494 Semiconductor devices and methods of manufacturing the same |
| 05/30/2013 | US20130134493 Vertical channel memory devices with nonuniform gate electrodes |
| 05/30/2013 | US20130134492 Semiconductor memory devices and methods for fabricating the same |
| 05/30/2013 | US20130134490 Low resistance embedded strap for a trench capacitor |
| 05/30/2013 | US20130134489 Pixel structure and fabricating method thereof |
| 05/30/2013 | US20130134488 Semiconductor Device and Manufacturing Method thereof |
| 05/30/2013 | US20130134487 Power transistor device with super junction and manufacturing method thereof |
| 05/30/2013 | US20130134486 Methods of Patterning Features in a Structure Using Multiple Sidewall Image Transfer Technique |
| 05/30/2013 | US20130134485 Semiconductor device and manufacturing method thereof |
| 05/30/2013 | US20130134483 Bipolar transistor with a raised collector pedastal for reduced capacitance and a method of forming the transistor |
| 05/30/2013 | US20130134482 Substrate breakdown voltage improvement for group iii-nitride on a silicon substrate |
| 05/30/2013 | US20130134481 Split-Channel Transistor and Methods for Forming the Same |
| 05/30/2013 | US20130134480 Formation of Devices by Epitaxial Layer Overgrowth |
| 05/30/2013 | US20130134479 Electrostatic discharge protection device |
| 05/30/2013 | US20130134478 Semiconductor device and method for manufacturing same |
| 05/30/2013 | US20130134477 Back gate triggered silicon controlled rectifiers |
| 05/30/2013 | US20130134476 Solid-state diode |
| 05/30/2013 | US20130134453 Transistor, method of manufacturing transistor, display unit, and electronic apparatus |
| 05/30/2013 | US20130134444 Stressed transistor with improved metastability |
| 05/30/2013 | US20130134443 Nitride semiconductor diode |
| 05/30/2013 | US20130134442 Semiconductor device and method for manufacturing same |
| 05/30/2013 | US20130134439 Epitaxial substrate for semiconductor element, semiconductor element, pn junction diode, and method for manufacturing an epitaxial substrate for semiconductor element |
| 05/30/2013 | US20130134437 Method for forming gallium nitride devices with conductive regions |
| 05/30/2013 | US20130134435 High electron mobility transistor structure with improved breakdown voltage performance |
| 05/30/2013 | US20130134434 Nitride semiconductor substrate |
| 05/30/2013 | US20130134433 Metallization structure for high power microelectronic devices |
| 05/30/2013 | US20130134432 Semiconductor device, and method of fabricating the same |
| 05/30/2013 | US20130134430 Display Device |
| 05/30/2013 | US20130134429 Thin-film transistor and thin-film transistor manufacturing method |
| 05/30/2013 | US20130134427 Transistor, display, and electronic apparatus |
| 05/30/2013 | US20130134426 Composition of organic insulating layer and thin film transistor substrate and display device using the same |
| 05/30/2013 | US20130134425 Array substrate and manufacturing method thereof |
| 05/30/2013 | US20130134424 Thin film transistor array substrate, organic light emitting display device comprising the same, and method of manufacturing the thin film transistor array substrate |
| 05/30/2013 | US20130134422 Transistor and semiconductor device |
| 05/30/2013 | US20130134420 Stress-Inducing Structures, Methods, and Materials |
| 05/30/2013 | US20130134418 Semiconductor device and method of manufacturing semiconductor device |
| 05/30/2013 | US20130134417 Display device |
| 05/30/2013 | US20130134415 Semiconductor device and method for manufacturing the same |
| 05/30/2013 | US20130134414 Semiconductor device and manufacturing method thereof |
| 05/30/2013 | US20130134413 Semiconductor device and method for manufacturing the same |
| 05/30/2013 | US20130134412 Semiconductor device and method for manufacturing the same |
| 05/30/2013 | US20130134411 Semiconductor device, process for production of semiconductor device, and display device |
| 05/30/2013 | US20130134394 Integrated Circuits Based on Aligned Nanotubes |
| 05/30/2013 | US20130134393 Nanotube Field Effect Devices and Methods of Making Same |
| 05/30/2013 | US20130134392 Doping Carbon Nanotubes and Graphene for Improving Electronic Mobility |
| 05/30/2013 | US20130134391 Reducing Contact Resistance for Field-Effect Transistor Devices |
| 05/30/2013 | US20130134384 Method of post treating graphene and method of manufacturing graphene using the same |
| 05/30/2013 | US20130134375 SEMICONDUCTOR DEVICE STRUCTURES COMPRISING CRYSTALLINE Pr1-xCaxMnO3 (PCMO) MATERIAL AND METHODS OF FORMING CRYSTALLINE PCMO MATERIAL |
| 05/29/2013 | EP2597680A2 Semiconductor device |
| 05/29/2013 | EP2597674A1 Method for producing a floating gate memory structure |
| 05/29/2013 | EP2596581A2 Power supply unit for a vehicle electrical system of a motor vehicle |
| 05/29/2013 | EP2596523A1 Device and process for forming, on a nanowire made of a semiconductor, an alloy of this semiconductor with a metal or metalloid |
| 05/29/2013 | EP2596522A1 Method of fabrication of semiconductor device |
| 05/29/2013 | EP2596521A1 Electronic device structure including a buffer layer on a base layer |
| 05/29/2013 | DE112011102840T5 Halbleiter, der durch elastische Kantenrelaxation eines Stressors in Kombination mit einer vergrabenen Isolierschicht verspannt wird Semiconductor, which is braced by elastic Kantenrelaxation of a stressor in combination with a buried insulating layer |
| 05/29/2013 | DE102012221620A1 Verfahren zum Strukturieren von Merkmalen in einer Struktur unter Verwendung einer Mehrfachseitenwandbildübertragungstechnik Method for patterning of features in a structure using a multiple sidewall image transfer technique |
| 05/29/2013 | DE102012220731A1 Verringern des Kontaktwiderstands für Feldeffekttransistoreinheiten Reduce the contact resistance of the field effect transistor units |
| 05/29/2013 | DE102011119497A1 Band zu Band Tunnel-Feldeffekttransistor mit gradierter Halbleiterheterostruktur im Tunnelübergang und Verfahren zu dessen Herstellung Band to band tunneling field effect transistor having a graded semiconductor heterostructure in the tunnel junction and process for its preparation |
| 05/29/2013 | DE102011088714B4 Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement A process for producing a semiconductor device and semiconductor device |
| 05/29/2013 | DE102009061250B3 Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements A semiconductor device and method of manufacturing a semiconductor device |
| 05/29/2013 | DE102009037487B4 Halbleitervorrichtung Semiconductor device |
| 05/29/2013 | DE102008064715B4 Verfahren zur Herstellung eines Transistors A method of manufacturing a transistor |
| 05/29/2013 | CN202957251U Thin film transistor, array substrate and display device |
| 05/29/2013 | CN202957250U MOS pipe sleeved by thermal shrinkable sleeve |
| 05/29/2013 | CN202957249U Power device |
| 05/29/2013 | CN202957248U 半导体器件 Semiconductor devices |
| 05/29/2013 | CN202957242U Display device and array substrate |
| 05/29/2013 | CN202957240U High-power double-tablet overlay packaged diode matrix type assembly |
| 05/29/2013 | CN1960001B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 05/29/2013 | CN1825565B Method for manufacturing an electro-optical device |
| 05/29/2013 | CN103125025A Spin injection electrode production method |
| 05/29/2013 | CN103125024A Semiconductor device and method for manufacturing same |
| 05/29/2013 | CN103125023A Semiconductor device and method for manufacturing same |
| 05/29/2013 | CN103125014A Semiconductor device with a gate stack |
| 05/29/2013 | CN103123948A Low-bending silicon-based III-nitride epitaxial wafer and growth method thereof |
| 05/29/2013 | CN103123936A Semiconductor element, method for manufacturing semiconductor element, and semiconductor device including semiconductor element |
| 05/29/2013 | CN103123935A NLDMOS (N-type laterally diffused metal oxide semiconductor) device and manufacturing method thereof |
| 05/29/2013 | CN103123934A Gallium-nitride-based high electronic mobility transistor structure with barrier layer and manufacture method thereof |
| 05/29/2013 | CN103123933A GaAs pseudomorphic high electron mobility transistor |
| 05/29/2013 | CN103123932A 半导体装置 Semiconductor device |
| 05/29/2013 | CN103123931A Parasitic N-I-P type PIN device structure in BiCMOS (bipolar complementary metal oxide semiconductor) process and manufacturing method of structure |
| 05/29/2013 | CN103123930A (110) surface orientation for reducing fermi-level-pinning between high-k dielectric and group iii-v compound semiconductor substrate |
| 05/29/2013 | CN103123929A Domain structure of isolation type high voltage resistant field effect tube |
| 05/29/2013 | CN103123928A Germanium-silicon heterojunction bipolar transistor (HBT) single tube structure, manufacture method thereof and germanium-silicon HBT multi-finger structure |
| 05/29/2013 | CN103123911A Pixel structure and method for manufacturing the same |
| 05/29/2013 | CN103123902A Semiconductor layer structure, polysilicon thin film transistor, manufacturing method and display device |
| 05/29/2013 | CN103123901A N/p boundary effect reduction for metal gate transistors |