| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/23/2013 | US20130126908 Memory Cells, And Methods Of Forming Memory Cells |
| 05/23/2013 | US20130126907 Group iii nitride semiconductor device and method for manufacturing the same |
| 05/23/2013 | US20130126906 Silicon carbide epitaxial wafer and manufacturing method therefor, silicon carbide bulk substrate for epitaxial growth and manufacturing method therefor and heat treatment apparatus |
| 05/23/2013 | US20130126905 Semiconductor device with low-conducting buried and/or surface layers |
| 05/23/2013 | US20130126904 Silicon carbide semiconductor device and method for manufacturing the same |
| 05/23/2013 | US20130126903 DIAMOND GaN DEVICES AND ASSOCIATED METHODS |
| 05/23/2013 | US20130126897 Compound semiconductor device and manufacturing method of the same |
| 05/23/2013 | US20130126896 Iii-v semiconductor structures and methods for forming the same |
| 05/23/2013 | US20130126895 Gallium Nitride Devices with Vias |
| 05/23/2013 | US20130126894 Low voltage diode with reduced parasitic resistance and method for fabricating |
| 05/23/2013 | US20130126893 Semiconductor device and method of manufacturing semiconductor device |
| 05/23/2013 | US20130126892 P-Type Amorphous GaNAs Alloy as Low Resistant Ohmic Contact to P-Type Group III-Nitride Semiconductors |
| 05/23/2013 | US20130126889 Manufacturable Enhancement-Mode Group III-N HEMT with a Reverse Polarization Cap |
| 05/23/2013 | US20130126888 Edge Termination by Ion Implantation in GaN |
| 05/23/2013 | US20130126886 Gan-based schottky barrier diode with algan surface layer |
| 05/23/2013 | US20130126885 Method and system for fabricating floating guard rings in gan materials |
| 05/23/2013 | US20130126884 Aluminum gallium nitride etch stop layer for gallium nitride bases devices |
| 05/23/2013 | US20130126882 Thin film transistor array substrate, organic light emitting display device comprising the same, and method of manufacturing the same |
| 05/23/2013 | US20130126880 Method Of Forming Polysilicon, Thin Film Transistor Using The Polysilicon, And Method Of Fabricating The Thin Film Transistor |
| 05/23/2013 | US20130126878 Display device and method for manufacturing the same |
| 05/23/2013 | US20130126876 Array substrate for fringe field switching mode liquid crystal display device and method for fabricating the same |
| 05/23/2013 | US20130126873 Thin Film Transistor, Fabrication Method Thereof, and Organic Light Emitting Diode Display Having the Same |
| 05/23/2013 | US20130126870 Thin Film Transistor, Array Substrate, Device and Manufacturing Method |
| 05/23/2013 | US20130126869 Thin-film transistor device and method for manufacturing thin-film transistor device |
| 05/23/2013 | US20130126868 Semiconductor element, method for manufacturing semiconductor element, and semiconductor device including semiconductor element |
| 05/23/2013 | US20130126867 High yield substrate assembly |
| 05/23/2013 | US20130126864 Semiconductor junction element, semiconductor device using it, and manufacturing method of semiconductor junction element |
| 05/23/2013 | US20130126863 Semiconductor device and manufacturing method thereof |
| 05/23/2013 | US20130126862 Method for manufacturing semiconductor device |
| 05/23/2013 | US20130126861 Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof |
| 05/23/2013 | US20130126860 Thin film transistor substrate |
| 05/23/2013 | US20130126830 Transistor employing vertically stacked self-aligned carbon nanotubes |
| 05/23/2013 | US20130126823 Memory device including transistor array with shared plate channel and method for making the same |
| 05/23/2013 | DE112007000175B4 Feldeffekttransistor eines Mehrfingertyps Field effect transistor of a multi-finger type |
| 05/23/2013 | DE102012221387A1 Transistor mit vertikal gestapelten Selbstausgerichteten Kohlenstoff-Nanoröhren Transistor having vertically stacked self-aligned carbon nanotubes |
| 05/23/2013 | DE102012220314A1 Transparenter Kohlenstoff-Nanoröhren-Graphen-Hybridleiter und Feldeffekttransistor Transparent carbon nanotube-graphene hybrid circuit and field effect transistor |
| 05/23/2013 | DE102012204455A1 (110)-Oberflächenorientierung zum Reduzieren eines Fermi-Level-Pinnings zwischen einem HIGH-K Dielektrikum und einer Gruppe III-V Verbindungshalbleitervorrichtung (110) surface orientation to reduce a Fermi-level pinning between a high-k dielectric and a group III-V compound semiconductor device |
| 05/23/2013 | DE102012203357A1 Lateral doppeldiffundiertes Metalloxid-Halbleiterbauelement und Verfahren zur Herstellung desselben Thereof laterally doppeldiffundiertes metal oxide semiconductor device and process for producing |
| 05/23/2013 | DE102011118930A1 Halbleiter-Gassensor Semiconductor gas sensor |
| 05/22/2013 | EP2595211A2 A flexible electronic device, method for manufacturing same, and a flexible substrate |
| 05/22/2013 | EP2595193A1 Multiple quantum well structure |
| 05/22/2013 | EP2595181A1 Compound semiconductor device and process for production thereof |
| 05/22/2013 | EP2595177A2 Lattice-mismatched semiconductor structures with reduced dislocation defect densities related methods for device fabrication |
| 05/22/2013 | EP2595176A2 Lattice-mismatched semiconductor structures with reduced dislocation defect densities related methods for device fabrication |
| 05/22/2013 | EP2595175A2 Lattice-mismatched semiconductor structures with reduced dislocation defect densities related methods for device fabrication |
| 05/22/2013 | EP2593967A1 Conductivity modulation in a silicon carbide bipolar junction transistor |
| 05/22/2013 | EP2593966A2 Memory arrays having substantially vertical, adjacent semiconductor structures and their formation |
| 05/22/2013 | CN202948935U Buried-PN-junction barrier Schottky diode |
| 05/22/2013 | CN202948934U Trench type MOSFET |
| 05/22/2013 | CN202948933U Graphene field effect transistor |
| 05/22/2013 | CN202948932U Groove type IGBT layout structure |
| 05/22/2013 | CN202948931U Power device for improving morphology of diffusion region |
| 05/22/2013 | CN202948930U Semiconductor device |
| 05/22/2013 | CN202948903U 晶体管 Transistor |
| 05/22/2013 | CN1993834B Group III nitride semiconductor device and epitaxial substrate |
| 05/22/2013 | CN103119723A Interface for mems inertial sensors |
| 05/22/2013 | CN103119722A Light emitting and lasing semiconductor methods and devices |
| 05/22/2013 | CN103119720A Method for producing semiconductor device, and semiconductor device |
| 05/22/2013 | CN103119715A Reverse-conducting power semiconductor device |
| 05/22/2013 | CN103119699A Thin film transistor, manufacturing method therefor and image display device |
| 05/22/2013 | CN103119698A Method of manufacturing semiconductor device |
| 05/22/2013 | CN103119693A Method for producing transistor |
| 05/22/2013 | CN103119656A Nonvolatile semiconductor memory device |
| 05/22/2013 | CN103117309A Horizontal power device structure and preparation method thereof |
| 05/22/2013 | CN103117308A Groove MOSFET (metal-oxide-semiconductor field-effect transistor) power rectifier and manufacturing method thereof |
| 05/22/2013 | CN103117307A Silicon transverse double-diffusion field effect transistor on high-reliability P-type insulator |
| 05/22/2013 | CN103117306A Tunnel FET and methods for forming the same |
| 05/22/2013 | CN103117305A Fin type field-effect tube and substrate thereof |
| 05/22/2013 | CN103117304A Gallium nitride field effect transistor structure with composite space layer and manufacture method thereof |
| 05/22/2013 | CN103117303A Nitride power device and manufacturing method thereof |
| 05/22/2013 | CN103117302A Back structure of FS type IGBT(Insulated Gate Bipolar Transistor)device |
| 05/22/2013 | CN103117301A Vertical parasitic P-type semiconductor N-type semiconductor P-type semiconductor (PNP) transistor in germanium-silicon hetero junction bipolar transistor (HBT) process and preparation method |
| 05/22/2013 | CN103117300A Parasitically transversal type PNP device and manufacture method |
| 05/22/2013 | CN103117299A Self-alignment bipolar transistor and preparation method thereof |
| 05/22/2013 | CN103117298A Ohmic electrode structure of silicon carbide and manufacturing method thereof |
| 05/22/2013 | CN103117297A Structure of semiconductor and manufacture process of semiconductor |
| 05/22/2013 | CN103117296A Metallic oxide semiconductor transistor and forming method thereof |
| 05/22/2013 | CN103117295A Power transistor with controllable reverse diode |
| 05/22/2013 | CN103117294A Nitride high-voltage device and manufacturing method thereof |
| 05/22/2013 | CN103117293A 3-D nonvolatile memory devices and methods of manufacturing the same |
| 05/22/2013 | CN103117281A Semiconductor memory device and method of manufacturing the same |
| 05/22/2013 | CN103117221A High electron mobility transistor (HEMT) component and manufacture method thereof |
| 05/22/2013 | CN103117209A Gradient AlGaN layer preparation method and device prepared by same |
| 05/22/2013 | CN103116238A Array substrate and liquid crystal display panel |
| 05/22/2013 | CN102386239B Indium phosphide (InP)-based PIN switching diode of planar structure and preparation method of indium phosphide-based PIN switching diode |
| 05/22/2013 | CN102376779B SiC肖特基二极管及其制作方法 SiC Schottky diode and manufacturing method thereof |
| 05/22/2013 | CN102361029B Common-gate common-source multi-drain carbon nanotube conducting channel field-effect transistor |
| 05/22/2013 | CN102244104B Flat and lug combined bidirectional diode chip and manufacturing process thereof |
| 05/22/2013 | CN102244095B Power semiconductor device |
| 05/22/2013 | CN102224592B p-type SiC semiconductor |
| 05/22/2013 | CN102214685B Semiconductor structure with suspended sources and drains as well as formation method thereof |
| 05/22/2013 | CN102208414B Super-junction channel metal oxide semiconductor field effect transistor and manufacturing method thereof |
| 05/22/2013 | CN102194693B Semiconductor device and manufacturing method thereof |
| 05/22/2013 | CN102187460B Multi-transistor memory cell |
| 05/22/2013 | CN102160158B Transistor with passive gate and methods of fabricating same |
| 05/22/2013 | CN102132414B Field-effect transistor, method for manufacturing same, and sputtering target |
| 05/22/2013 | CN102064175B Semiconductor structure and manufacturing method thereof |
| 05/22/2013 | CN101999168B Method of creating alignment/centering guides for small diameter, high density through-wafer via die stacking |
| 05/22/2013 | CN101894798B Fabrication method of semiconductor integrated circuit device |
| 05/22/2013 | CN101814492B Integrated circuit having metal gate stacks and manufacture method thereof |