Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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07/02/2013 | US8476764 Bonding pad structure for semiconductor devices |
07/02/2013 | US8476754 Wiring substrate and method of manufacturing the same |
07/02/2013 | US8476738 Electronic package with stacked semiconductor chips |
07/02/2013 | US8476736 Low leakage diodes |
07/02/2013 | US8476735 Programmable semiconductor interposer for electronic package and method of forming |
07/02/2013 | US8476731 Nitride semiconductor diode |
07/02/2013 | US8476728 Parasitic PIN device in a BiCMOS process and manufacturing method of the same |
07/02/2013 | US8476724 Spin wave device |
07/02/2013 | US8476723 Magnetic element having low saturation magnetization |
07/02/2013 | US8476722 Magnetic memory device |
07/02/2013 | US8476721 Magnet-assisted transistor devices |
07/02/2013 | US8476720 Systems and methods for vertically stacking a sensor on an integrated circuit chip |
07/02/2013 | US8476719 Semiconductor device and method of manufacturing the same |
07/02/2013 | US8476708 Semiconductor memory device having a circuit formed on a single crystal semiconductor layer with varied germanium concentration |
07/02/2013 | US8476707 Method for manufacturing semiconductor device |
07/02/2013 | US8476706 CMOS having a SiC/SiGe alloy stack |
07/02/2013 | US8476705 High voltage semiconductor device |
07/02/2013 | US8476704 Circuit structure with vertical double gate |
07/02/2013 | US8476703 Three-dimensional semiconductor device structures and methods |
07/02/2013 | US8476702 Semiconductor device |
07/02/2013 | US8476701 Semiconductor device with gate electrode including a concave portion |
07/02/2013 | US8476700 Semiconductor device and method of fabricating the same |
07/02/2013 | US8476699 Method for producing semiconductor device and semiconductor device |
07/02/2013 | US8476698 Corner layout for superjunction device |
07/02/2013 | US8476697 Short-channel silicon carbide power MOSFET |
07/02/2013 | US8476696 Nonvolatile semiconductor memory device and method of manufacturing the same |
07/02/2013 | US8476695 Self aligned narrow storage elements for advanced memory device |
07/02/2013 | US8476694 Memory cell, memory device and method for manufacturing memory cell |
07/02/2013 | US8476693 Nonvolatile semiconductor memory and method for manufacturing the same |
07/02/2013 | US8476692 Semiconductor devices and methods of manufacturing the same |
07/02/2013 | US8476691 High reliability-high voltage junction termination with charge dissipation layer |
07/02/2013 | US8476690 Nonvolatile programmable logic switches and semiconductor integrated circuit |
07/02/2013 | US8476687 Low impedance transmisson line |
07/02/2013 | US8476684 Field effect transistors having improved breakdown voltages and methods of forming the same |
07/02/2013 | US8476680 Semiconductor device and method for manufacturing the same |
07/02/2013 | US8476678 CMOS Transistor with dual high-k gate dielectric |
07/02/2013 | US8476677 Semiconductor device |
07/02/2013 | US8476676 Trench poly ESD formation for trench MOS and SGT |
07/02/2013 | US8476675 Semiconductor device and method of manufacture thereof |
07/02/2013 | US8476674 Gate conductor with a diffusion barrier |
07/02/2013 | US8476673 Diode |
07/02/2013 | US8476672 Electrostatic discharge protection device and method for fabricating the same |
07/02/2013 | US8476668 High voltage low current surface emitting LED |
07/02/2013 | US8476654 Display device |
07/02/2013 | US8476649 Solid state lighting devices with accessible electrodes and methods of manufacturing |
07/02/2013 | US8476647 Silicon-germanium, quantum-well, light-emitting diode |
07/02/2013 | US8476641 Semiconductor memory device |
07/02/2013 | US8476640 Solid state lighting devices and associated methods of manufacturing |
07/02/2013 | US8476639 Group III nitride semiconductor and group III nitride semiconductor structure |
07/02/2013 | US8476638 Plasma CVD apparatus |
07/02/2013 | US8476637 Nanostructure optoelectronic device having sidewall electrical contact |
07/02/2013 | US8476636 Poly-Si thin film transistor and method of manufacturing the same |
07/02/2013 | US8476634 Display device and method of manufacturing the same |
07/02/2013 | US8476633 Thin film transistor array substrate for a display panel and a method for manufacturing a thin film transistor array substrate for a display panel |
07/02/2013 | US8476632 Semiconductor device and manufacturing method thereof |
07/02/2013 | US8476631 Thin film transistor with offset structure and electrodes in a symmetrical arrangement |
07/02/2013 | US8476630 Methods of adding pads and one or more interconnect layers to the passivated topside of a wafer including connections to at least a portion of the integrated circuit pads thereon |
07/02/2013 | US8476629 Enhanced wafer test line structure |
07/02/2013 | US8476628 Device using oxide semiconductor, display device, and electronic apparatus |
07/02/2013 | US8476627 Thin-film transistor, method of fabricating the thin-film transistor, and display substrate using the thin-film transistor |
07/02/2013 | US8476625 Semiconductor device comprising gate electrode of one conductive layer and gate wiring of two conductive layers |
07/02/2013 | US8476622 Active matrix organic light emitting diode |
07/02/2013 | US8476618 Organic electroluminescent display device |
07/02/2013 | US8476617 Graphene-containing semiconductor structures and devices on a silicon carbide substrate having a defined miscut angle |
07/02/2013 | US8476615 GaN-based semiconductor light emitting device and the method for making the same |
07/02/2013 | US8476613 Reproducible resistance variable insulating memory devices and methods for forming same |
07/02/2013 | US8476612 Method for forming a lateral phase change memory element |
07/02/2013 | US8476163 Semiconductor device and manufacturing method therefor |
07/02/2013 | US8476149 Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling process |
07/02/2013 | US8476147 SOI substrate and manufacturing method thereof |
07/02/2013 | US8476138 Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device |
07/02/2013 | US8476136 Method and a structure for enhancing electrical insulation and dynamic performance of MIS structures comprising vertical field plates |
07/02/2013 | US8476133 Method of manufacture and structure for a trench transistor having a heavy body region |
07/02/2013 | US8476095 Diode energy converter for chemical kinetic electron energy transfer |
07/02/2013 | US8476092 Fabricating method of a thin film transistor substrate for liquid crystal display device of minimizing defects due to static electricity |
07/02/2013 | US8474318 Acceleration sensor |
06/27/2013 | WO2013096821A1 Aluminum nitride based semiconductor devices |
06/27/2013 | WO2013096564A1 Non-volatile storage system with three layer floating gate |
06/27/2013 | WO2013095750A1 Contact structures for semiconductor transistors |
06/27/2013 | WO2013095656A1 Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition |
06/27/2013 | WO2013095655A1 Semiconductor device having germanium active layer with underlying diffusion barrier layer |
06/27/2013 | WO2013095652A1 Uniaxially strained nanowire structure |
06/27/2013 | WO2013095651A1 Non-planar gate all-around device and method of fabrication thereof |
06/27/2013 | WO2013095650A1 Nanowire structures having non-discrete source and drain regions |
06/27/2013 | WO2013095647A1 Nanowire structures having wrap-around contacts |
06/27/2013 | WO2013095645A1 Semiconductor devices having modulated nanowire counts |
06/27/2013 | WO2013095643A1 Iii-n material structure for gate-recessed transistors |
06/27/2013 | WO2013095550A1 Semiconductor device having a necked semiconductor body and method of forming semiconductor bodies of varying width |
06/27/2013 | WO2013095548A1 Gate aligned contact and method to fabricate same |
06/27/2013 | WO2013095474A1 Methods for forming fins for metal oxide semiconductor device structures |
06/27/2013 | WO2013095443A1 Semiconductor devices having three-dimensional bodies with modulated heights |
06/27/2013 | WO2013095384A1 Semiconductor device with isolated body portion |
06/27/2013 | WO2013095377A1 Self-aligned contact metallization for reduced contact resistance |
06/27/2013 | WO2013095376A1 Strained channel region transistors employing source and drain stressors and systems including the same |
06/27/2013 | WO2013095375A1 Iii-v layers for n-type and p-type mos source-drain contacts |
06/27/2013 | WO2013095349A1 Semiconductor device having metallic source and drain regions |
06/27/2013 | WO2013095347A1 Selective laser annealing process for buried regions in a mos device |
06/27/2013 | WO2013095346A1 Non-planar iii-n transistor |
06/27/2013 | WO2013095343A1 Group iii-n nanowire transistors |
06/27/2013 | WO2013095342A1 High voltage field effect transistors |