Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2013
06/19/2013CN203013735U High-reliability depletion type power semiconductor device
06/19/2013CN203013734U Super junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
06/19/2013CN203013733U Igbt
06/19/2013CN203013732U A semiconductor device
06/19/2013CN203013731U Silicon carbide device with ohmic contact protection layer
06/19/2013CN203013730U Insulated gate bipolar transistor (IGBT) back-side collector electrode structure
06/19/2013CN203011560U Silicon carbide temperature sensor
06/19/2013CN1945856B Semiconductor device and method of fabricating the same
06/19/2013CN1614756B Semiconductor device and its manufacture
06/19/2013CN103168364A Organic electronic devices
06/19/2013CN103168363A Semiconductor structure and methods of manufacture
06/19/2013CN103168362A Semiconductor device and method for manufacturing same
06/19/2013CN103168361A Semiconductor device
06/19/2013CN103168077A Resin composition, laminate and process for production thereof, structure and process for production thereof, and process for production of electronic device
06/19/2013CN103167725A Three-dimension circuit structure and semiconductor device
06/19/2013CN103165682A Electrode structure of PIN diode
06/19/2013CN103165681A Catching diode and manufacture method thereof
06/19/2013CN103165680A Transparent film, manufacturing method thereof, base plate for displaying and display device
06/19/2013CN103165679A Thin film transistor and method for manufacturing the same
06/19/2013CN103165678A Super junction lateral double-diffused metal-oxide semiconductor (LDMOS) device
06/19/2013CN103165677A 半导体装置 Semiconductor device
06/19/2013CN103165676A Field effect transistor
06/19/2013CN103165675A Mechanisms for forming stressor regions in a semiconductor device
06/19/2013CN103165674A Finfets with multiple threshold voltages
06/19/2013CN103165673A Groove type insulated gate field effect tube
06/19/2013CN103165672A Metal oxide semiconductor (MOS) device and manufacturing method of the same
06/19/2013CN103165671A Metal oxide semiconductor (MOS) device and preparation method of the same
06/19/2013CN103165670A Terminal protection structure of super junction component
06/19/2013CN103165669A Trench power metal oxide semiconductor (MOS) device and manufacturing method thereof
06/19/2013CN103165668A Semiconductor device
06/19/2013CN103165667A Vertical parasitic type plug-and-play (PNP) audion in germanium silicon heterojunction bipolar transistor (HBT) technology and manufacture method
06/19/2013CN103165666A Semiconductor device and manufacturing method thereof
06/19/2013CN103165665A Amorphous high k gate dielectric stack and preparation method thereof
06/19/2013CN103165664A Semiconductor device and manufacturing method of the same
06/19/2013CN103165663A Anchoring structure and intermeshing structure
06/19/2013CN103165662A Resistive memory device and method of manufacturing the same
06/19/2013CN103165661A Methods and apparatus for reduced gate resistance finfet
06/19/2013CN103165660A Thin film transistor and manufacturing method of thin film transistor
06/19/2013CN103165659A Zener diode and manufacture method thereof
06/19/2013CN103165658A Elastic main electrode of insulated gate bipolar translator (IGBT)
06/19/2013CN103165657A Junction terminal structure of transverse high voltage power semiconductor device
06/19/2013CN103165656A Semiconductor device and method of manufacturing the same
06/19/2013CN103165655A Semiconductor device and method for manufacturing the same
06/19/2013CN103165654A N-I-P type PIN device and manufacturing method thereof
06/19/2013CN103165653A Deep groove type super node terminal protective structure
06/19/2013CN103165652A Metal oxide semiconductor (MOS) device and manufacturing method of the same
06/19/2013CN103165651A Insulated gate bipolar transistor (IGBT) structure for enhancing drive current capacity
06/19/2013CN103165626A Display panel and display device
06/19/2013CN103165620A 3-d nonvolatile memory device, memory system, and method of manufacturing the 3-d nonvolatile memory device
06/19/2013CN103165598A Array substrate including thin film transistor and method of fabricating the same
06/19/2013CN103165573A Vertical parasitic PNP device in Bipolar CMOS (BiCMOS) technology and manufacturing method thereof
06/19/2013CN103165536A Pinch-off control of gate edge dislocation
06/19/2013CN103165524A Insulated gate bipolar translator (IGBT) chip and manufacturing method of copper metallization structure on right side of IGBT chip
06/19/2013CN103165510A Shallow trench isolation structure and forming method thereof, semiconductor device structure and forming method thereof
06/19/2013CN103165471A Thin film transistor and manufacture method and display device thereof
06/19/2013CN103165470A Preparing method of side grid graphene transistor based on copper (Cu) membrane annealing and chlorine (Cl2) reaction
06/19/2013CN103165469A Preparing method of side grid graphene transistor on silicon (Si) substrate based on copper (Cu) membrane annealing
06/19/2013CN103165468A Preparing method of side grid graphene transistor through reaction of silicon carbide (SiC) and chlorine gas (Cl2) based on copper (Cu) membrane annealing
06/19/2013CN103165467A Manufacturing method of side grid graphene transistor on silicon carbide (SiC) substrate based on copper (Cu) membrane annealing
06/19/2013CN103165466A Semiconductor device including polysilicon resistor and metal gate resistor and methods of fabricating thereof
06/19/2013CN103165459A Fin field effect transistor and manufacturing method of the same
06/19/2013CN103165454A Semiconductor device and manufacturing method of the same
06/19/2013CN103165453A High-dielectric metal gate metal oxide semiconductor (MOS) and manufacturing method thereof
06/19/2013CN103165452A Transistor of lateral diffused metal-oxide-semiconductor (LDMOS) and manufacture method thereof
06/19/2013CN103165451A Structure of semiconductor device and manufacture method
06/19/2013CN103165447A Fin type field effect transistor and manufacture method thereof
06/19/2013CN103165446A HEMT (high electron mobility transistor) device available for silicon-based integration and method for preparing HEMT device
06/19/2013CN103165445A In situ grown gate dielectric and field plate dielectric
06/19/2013CN103165444A High-quality gan high-voltage hfets on silicon
06/19/2013CN103165443A Insulated gate transistor device and manufacturing technology method thereof
06/19/2013CN103165439A Blocking layer in contact hole and manufacturing method for blocking layer
06/19/2013CN103165433A Semiconductor gate structure and forming method thereof
06/19/2013CN103165427A Metal oxide semiconductor (MOS) device and forming method thereof
06/19/2013CN103165415A Semiconductor device with biased feature
06/19/2013CN102394242B Amorphous indium zinc oxide/carbon nanotube composite film transistor and preparation method thereof
06/19/2013CN102386098B Metal oxide semiconductor (MOS) transistor and forming method thereof
06/19/2013CN102347267B High-quality SGOI (SiGe-on insulator) produced by utilizing material with superlattice structure and production method of high-quality SGOI
06/19/2013CN102315109B Semiconductor device and method for manufacturing the same
06/19/2013CN102306659B LDMOS (laterally double-diffused metal-oxide-semiconductor field effect transistor) device based on internal electric field modulation
06/19/2013CN102296270B Doped zinc oxide semiconductor material, and preparation method and application thereof
06/19/2013CN102270639B Power semiconductor integrated device
06/19/2013CN102263127B MOS (Metal Oxide Semiconductor) type power device and manufacturing method thereof
06/19/2013CN102254943B Transistor power device with gate source side table protection and manufacturing method thereof
06/19/2013CN102203947B Method for manufacturing thin film transistor and thin film transistor
06/19/2013CN102203925B Method for producing semiconductor element
06/19/2013CN102201368B Production method and structure of silicon chip and substrate co-constructed surface adhesive diode element
06/19/2013CN102194756B Fin field effect transistor and method of making the same
06/19/2013CN102187465B 功率器件 Power Devices
06/19/2013CN102097486B Thin film transistor, method of manufacturing the same, and organic electroluminescent device
06/19/2013CN102084511B Triple-gate or multi-gate component based on the tunneling effect
06/19/2013CN102034872B Semiconductor device
06/19/2013CN102024819B Apparatus for providing SRAM and CAM bit cell
06/19/2013CN101997032B Semiconductor device and manufacturing method thereof
06/19/2013CN101997026B Substrate structure processed by a substrate and manufacturing method thereof
06/19/2013CN101981657B Methods of forming buffer layer architecture on silicon and structures formed thereby
06/19/2013CN101964359B Bipolar transistor, forming method thereof and virtual ground circuit
06/19/2013CN101916544B Electro-optics apparatus
06/19/2013CN101826466B Semiconductor device, method of manufacturing the same, and electronic apparatus
06/19/2013CN101740636B 薄膜晶体管和显示装置 A thin film transistor and a display device
06/19/2013CN101677111B Semiconductor device, electronic device, and method of manufacturing semiconductor device
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