Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2013
06/06/2013US20130143387 Method of manufacturing a semiconductor device
06/06/2013US20130143377 Structure and method for replacement gate mosfet with self-aligned contact using sacrificial mandrel dielectric
06/06/2013US20130143374 Method for manufacturing semiconductor device and method for growing graphene
06/06/2013US20130143373 Method of manufacturing nitride semiconductor device
06/06/2013US20130143371 Dual-depth self-aligned isolation structure for a back gate electrode
06/06/2013US20130143370 Logic Switch and Circuits Utilizing the Switch
06/06/2013US20130142211 Parallel optical transceiver module
06/06/2013US20130141978 Flash memory devices and systems
06/06/2013US20130141156 High Electron Mobility Transistors with Multiple Channels
06/06/2013US20130140703 Contact structure in a memory device
06/06/2013US20130140682 Buried word line and method for forming buried word line in semiconductor device
06/06/2013US20130140679 Semiconductive ceramic sintered compact
06/06/2013US20130140671 Compound semiconductor integrated circuit with three-dimensionally formed components
06/06/2013US20130140670 Structure and method for reduction of vt-w effect in high-k metal gate devices
06/06/2013US20130140669 Semiconductor device and method of manufacturing the same
06/06/2013US20130140667 Localized carrier lifetime reduction
06/06/2013US20130140659 Flux-closed stram with electronically reflective insulative spacer
06/06/2013US20130140658 Memory element and memory apparatus
06/06/2013US20130140657 Magnetic memory devices including free magnetic layer having three-dimensional structure
06/06/2013US20130140655 Mems acoustic transducer and method for fabricating the same
06/06/2013US20130140654 Low Frequency CMUT with Vent Holes
06/06/2013US20130140653 Mems device etch stop
06/06/2013US20130140650 MEMS Devices and Methods for Forming the Same
06/06/2013US20130140649 Transient devices designed to undergo programmable transformations
06/06/2013US20130140648 Electrochemical transistor
06/06/2013US20130140647 Iii-v metal-oxide-semiconductor device
06/06/2013US20130140646 Transistor with reduced depletion field width
06/06/2013US20130140645 Semiconductor fuses in a semiconductor device comprising metal gates
06/06/2013US20130140636 Stressed channel fet with source/drain buffers
06/06/2013US20130140635 Semiconductor device and method of manufacturing the same
06/06/2013US20130140634 Method of replacing silicon with metal in integrated circuit chip fabrication
06/06/2013US20130140633 Edge termination for super junction mosfet devices
06/06/2013US20130140632 Lateral Transistor Component and Method for Producing Same
06/06/2013US20130140631 Semicondutor isolation structure and method of manufacture
06/06/2013US20130140630 Trench schottky diode and manufacturing method thereof
06/06/2013US20130140629 Insulated gate field effect transistor having passivated schottky barriers to the channel
06/06/2013US20130140628 Semiconductor device and method of manufacturing semiconductor device
06/06/2013US20130140627 Method for producing semiconductor device and semiconductor device
06/06/2013US20130140626 Field-Effect Device and Manufacturing Method Thereof
06/06/2013US20130140625 Field-Effect Transistor and Method of Making
06/06/2013US20130140624 Semiconductor Structure and Method for Forming The Semiconductor Structure
06/06/2013US20130140623 Three-dimensional semiconductor memory device
06/06/2013US20130140622 Nonvolatile semiconductor device and method of manufacturing the same
06/06/2013US20130140621 Flash memory
06/06/2013US20130140620 Flash Memory and Manufacturing Method Thereof
06/06/2013US20130140618 Vertical transistors
06/06/2013US20130140612 Field-effect transistor having back gate and method of fabricating the same
06/06/2013US20130140611 Pressure sensor having nanostructure and manufacturing method thereof
06/06/2013US20130140607 Devices and methods related to a gallium arsenide schottky diode having low turn-on voltage
06/06/2013US20130140606 Complementary logic device using spin injection
06/06/2013US20130140605 GaN high voltage HFET with passivation plus gate dielectric multilayer structure
06/06/2013US20130140604 Silicon-germanium heterojunction bipolar transistor and manufacturing method thereof
06/06/2013US20130140603 Power semiconductor device
06/06/2013US20130140602 Power Semiconductor Package with Conductive Clip
06/06/2013US20130140601 Recessed Channel Negative Differential Resistance-Based Memory Cell
06/06/2013US20130140586 Silicon carbide semiconductor element and method for producing the same
06/06/2013US20130140585 Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making
06/06/2013US20130140584 Semiconductor device
06/06/2013US20130140583 Silicon carbide semiconductor device and method for manufacturing the same
06/06/2013US20130140582 Semiconductor device and method for manufacturing same
06/06/2013US20130140579 Method of integrating a plurality of benzocyclobutene layers with a substrate and an associated device
06/06/2013US20130140578 Circuit structure having islands between source and drain
06/06/2013US20130140577 Semiconductor Device and Method for Preparing the Same
06/06/2013US20130140576 Semiconductor device and method for manufacturing the same
06/06/2013US20130140574 Thin film transistor array substrate and method for manufacturing the same and electronic device
06/06/2013US20130140573 Manufacturing method for crystalline semiconductor film, semiconductor device, and display device
06/06/2013US20130140570 Thin film transistor array panel
06/06/2013US20130140569 Semiconductor device
06/06/2013US20130140567 Silicon substrate, epitaxial structure including the same, and method of manufacturing the silicon substrate
06/06/2013US20130140566 Bipolar junction transistor with a self-aligned emitter and base
06/06/2013US20130140565 Test structure for detection of gap in conductive layer of multilayer gate stack
06/06/2013US20130140562 Display substrate and method of manufacturing the same
06/06/2013US20130140560 Semiconductor device
06/06/2013US20130140559 Semiconductor device and method for manufacturing the same
06/06/2013US20130140558 Semiconductor device
06/06/2013US20130140557 Method for manufacturing semiconductor device
06/06/2013US20130140556 Thin film transistor and array substrate including the same
06/06/2013US20130140555 Semiconductor device and manufacturing method thereof
06/06/2013US20130140554 Semiconductor device and method for manufacturing the same
06/06/2013US20130140553 Semiconductor device and method for manufacturing the same
06/06/2013US20130140552 Semiconductor device, method for manufacturing same, and display device
06/06/2013US20130140551 Transistors, methods of manufacturing the same, and electronic devices including transistors
06/06/2013US20130140526 Hexagonal boron nitride sheet, method of preparing the hexagonal boron nitride sheet, and electronic device including the hexagonal boron nitride sheet
06/06/2013US20130140525 Gallium nitride growth method on silicon substrate
06/06/2013US20130140524 Nanoparticle Synthesis
06/06/2013US20130140523 Quantum Well Device With Lateral Electrodes
06/06/2013US20130140518 Quantum dot gate fets and circuits configured as biosensors and gene sequencers
06/06/2013US20130140517 Thin and Flexible Gallium Nitride and Method of Making the Same
06/06/2013US20130140503 Precursor composition for forming amorphous metal oxide semiconductor layer, amorphous metal oxide semiconductor layer, method for producing same, and semiconductor device
06/06/2013US20130139594 Lexvu opto microelectronics technology shanghai (ltd)
06/06/2013US20130139570 Semiconductor gas sensor and method for measuring a residual gas proportion with a semiconductor gas sensor
06/06/2013DE19983646B3 Statischer Kondensator-Drucksensor Static Condenser pressure sensor
06/06/2013DE112011102644T5 Integrierte Halbleiterschaltung A semiconductor integrated circuit
06/06/2013DE112011102263T5 Halbleitervorrichtung Semiconductor device
06/06/2013DE112010003403T5 Transistoren mit einer Gate-Isolationsschicht mit einer Kanalverarmungsgrenzschichtladung und diesbezügliches Herstellungsverfahren Transistors with a gate insulating layer with a channel depletion boundary layer charge, and to this effect production method
06/06/2013DE102012221690A1 4H-SiC-Halbleiterelement und Halbleitervorrichtung 4H-SiC semiconductor element and semiconductor device
06/06/2013DE102012220822A1 Finfet mit verbesserter gate-planarität FinFET with improved gate-planarity
06/06/2013DE102012217435A1 Diode mit steuerbarer Durchbruchsspannung Diode breakdown voltage with controllable
06/06/2013DE102012111832A1 Integrierte Schaltung mit einem Leistungstransistor und einem Hilfstransistor Integrated circuit having a power transistor and an auxiliary transistor
06/06/2013DE102012111575A1 Hybrid-Finnenfeldeffekttransistoren Hybrid fin field-effect transistors
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