Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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06/20/2013 | US20130154051 Method for forming a deep trench in a microelectronic component substrate |
06/20/2013 | US20130154050 Integrated Circuit and IC Manufacturing Method |
06/20/2013 | US20130154048 Guard Ring for Through Vias |
06/20/2013 | US20130154037 Method of making device |
06/20/2013 | US20130154034 Method and system for setting a pinned layer in a magnetic tunneling junction |
06/20/2013 | US20130154033 Micro-electro-mechanical system (mems) structures and design structures |
06/20/2013 | US20130154030 Semiconductor Device with Self-Charging Field Electrodes and Compensation Regions |
06/20/2013 | US20130154029 Embedded stressors for multigate transistor devices |
06/20/2013 | US20130154025 Semiconductor device including capacitor stabilizing variation of power supply voltage |
06/20/2013 | US20130154017 Self-Aligned Gate Structure for Field Effect Transistor |
06/20/2013 | US20130154016 Tin doped iii-v material contacts |
06/20/2013 | US20130154010 Integrated Circuit Device, System, and Method of Fabrication |
06/20/2013 | US20130154007 Rare-earth oxide isolated semiconductor fin |
06/20/2013 | US20130154004 Semiconductor device with biased feature |
06/20/2013 | US20130154003 Asymmetric anti-halo field effect transistor |
06/20/2013 | US20130154001 Embedded stressors for multigate transistor devices |
06/20/2013 | US20130153999 Trench gate mosfet device |
06/20/2013 | US20130153997 Hybrid cmos nanowire mesh device and bulk cmos device |
06/20/2013 | US20130153996 Hybrid cmos nanowire mesh device and pdsoi device |
06/20/2013 | US20130153995 Semiconductor device and method for manufacturing the same |
06/20/2013 | US20130153994 Trench type power transistor device with super junction and manufacturing method thereof |
06/20/2013 | US20130153993 Hybrid cmos nanowire mesh device and finfet device |
06/20/2013 | US20130153992 Electronic device including a tapered trench and a conductive structure therein and a process of forming the same |
06/20/2013 | US20130153991 Electronic device comprising conductive structures and an insulating layer between the conductive structures and within a trench and a process of forming the same |
06/20/2013 | US20130153990 Semiconductor device and method for manufacturing the same |
06/20/2013 | US20130153989 Method for manufacturing semiconductor device and semiconductor device |
06/20/2013 | US20130153988 Electronic device including a trench with a facet and a conductive structure therein and a process of forming the same |
06/20/2013 | US20130153987 Electronic device comprising a conductive structure and an insulating layer within a trench and a process of forming the same |
06/20/2013 | US20130153986 High-k dielectrics with gold nano-particles |
06/20/2013 | US20130153985 Non-volatile semiconductor memory device and method of manufacturing the same |
06/20/2013 | US20130153983 3-d nonvolatile memory device, memory system including the 3-d nonvolatile memory device, and method of manufacturing the 3-d nonvolatile memory device |
06/20/2013 | US20130153981 Nonvolatile memory devices and methods of manufacturing the same |
06/20/2013 | US20130153979 Three-dimensional non-volatile memory device, memory system and method of manufacturing the same |
06/20/2013 | US20130153978 3d non-volatile memory device and method of manufacturing the same |
06/20/2013 | US20130153974 Two-step silicide formation |
06/20/2013 | US20130153970 Transistor structure, method for manufacturing a transistor structure, force-measuring system |
06/20/2013 | US20130153969 Structure for mosfet sensor |
06/20/2013 | US20130153968 Semiconductor Device |
06/20/2013 | US20130153967 Compound Semiconductor Device with Buried Field Plate |
06/20/2013 | US20130153966 Semiconductor device |
06/20/2013 | US20130153965 Strained transistor integration for cmos |
06/20/2013 | US20130153963 Gated iii-v semiconductor structure and method |
06/20/2013 | US20130153961 In-situ pre-clean prior to epitaxy |
06/20/2013 | US20130153958 Semiconductor switching device |
06/20/2013 | US20130153957 Silicon-controlled-rectifier with adjustable holding voltage |
06/20/2013 | US20130153955 Semiconductor device |
06/20/2013 | US20130153954 Semiconductor device |
06/20/2013 | US20130153931 N-doped single crystal diamond substrates and methods therefor |
06/20/2013 | US20130153929 Method and structure for forming high-k/metal gate extremely thin semiconductor on insulator device |
06/20/2013 | US20130153928 Method for controlled growth of silicon carbide and structures produced by same |
06/20/2013 | US20130153927 Semiconductor devices having stressor regions and related fabrication methods |
06/20/2013 | US20130153926 Semiconductor device and method for manufacturing same |
06/20/2013 | US20130153925 Semiconductor device |
06/20/2013 | US20130153924 Piezoelectric devices and methods for their preparation and use |
06/20/2013 | US20130153923 Enhancement mode iii-nitride device and method for manufacturing thereof |
06/20/2013 | US20130153921 Nitride semiconductor device using selective growth and manufacturing method thereof |
06/20/2013 | US20130153919 III-V Semiconductor Devices with Buried Contacts |
06/20/2013 | US20130153917 Ingan ohmic source contacts for vertical power devices |
06/20/2013 | US20130153916 Semiconductor Device Including a Diode |
06/20/2013 | US20130153915 Organic light emitting display apparatus and method of manufacturing the organic light emitting display apparatus |
06/20/2013 | US20130153912 Active matrix substrate, method for fabricating the same, and display device |
06/20/2013 | US20130153911 Array substrate, manufacturing method thereof and display device |
06/20/2013 | US20130153910 Transistor and display device |
06/20/2013 | US20130153903 Ambipolar transistor device structure and method of forming the same |
06/20/2013 | US20130153902 Structures including passivated germanium |
06/20/2013 | US20130153897 Power bipolar structure, in particular for high voltage applications |
06/20/2013 | US20130153895 Semiconductor device and manufacturing method thereof |
06/20/2013 | US20130153892 Semiconductor device and method for manufacturing semiconductor device |
06/20/2013 | US20130153891 Thin film transistor and method for manufacturing the same |
06/20/2013 | US20130153890 Semiconductor device and display device including the same |
06/20/2013 | US20130153889 Semiconductor device and method for manufacturing the same |
06/20/2013 | US20130153888 Semiconductor device and method of manufacturing the semiconductor device |
06/20/2013 | US20130153887 Semiconductor device and method of manufacturing the semiconductor device |
06/20/2013 | US20130153886 Semiconductor device and manufacturing method thereof |
06/20/2013 | US20130153872 Thin-film transistor substrate and method for fabricating the same, display |
06/20/2013 | US20130153858 Nitride semiconductor template and light-emitting diode |
06/20/2013 | US20130153855 Chemical Oxidation of Graphene and Carbon Nanotubes Using Cerium (IV) Ammonium Nitrate |
06/20/2013 | US20130153026 Substrate for solar cell, and solar cell |
06/20/2013 | DE112011101254T5 Leistungshalbleiterbauteil und Verfahren zu dessen Herstellung Power semiconductor device and process for its preparation |
06/20/2013 | DE112007000175B9 Feldeffekttransistor eines Mehrfingertyps Field effect transistor of a multi-finger type |
06/20/2013 | DE102012223663A1 Semiconductor component e.g. power MOSFET has cell array edge zone which is provided in edge region of cell array and partially provided below trench in cell array so as to adjoin trench of cell array |
06/20/2013 | DE102012222032A1 Chemische oxidation von graphen und kohlenstoffnanoröhrchenunter verwendung von cer(iv)-ammoniumnitrat Ammonium nitrate chemical oxidation of graphene and carbon nanotubes under-use of cerium (iv) |
06/20/2013 | DE102012221824A1 Eingebettete stressoren für multi-gate-transistoreinheiten Embedded stressors for multi-gate transistor units |
06/20/2013 | DE102012112332A1 Halbleitervorrichtung mit einer Diode A semiconductor device comprising a diode |
06/20/2013 | DE102012111830A1 III-V Halbleitervorrichtung mit vergrabenen Kontakten III-V semiconductor device with buried contacts |
06/20/2013 | DE102011089261A1 Transistorstruktur, Verfahren zur Herstellung einer Transistorstruktur, Kraftmesssystem Transistor structure, methods of making a transistor structure, force measuring system |
06/20/2013 | DE102011088912A1 Schaltungsanordnung zur Detektion eines Kurzschlusses bei einer Leistungsschalteranordnung Circuit arrangement for detecting a short-circuit at a power switch arrangement |
06/20/2013 | DE102011088834A1 Composite for insertion diode, has component portion(s) which are integrally joined by adhesive bond, and having different thermal expansions, and balancing insert element comprising iron, molybdenum, tantalum and/or tungsten |
06/20/2013 | DE102011056412A1 Hochvolttransistorbauelement und Herstellungsverfahren High-voltage transistor device and manufacturing method |
06/20/2013 | DE102007063820B3 Vertikaler Halbleiterleistungsschalter und Verfahren zu dessen Herstellung Vertical semiconductor power switch and process for its preparation |
06/19/2013 | EP2605429A1 Optical nanowire antenna with directional transmission |
06/19/2013 | EP2605428A1 Nanowire antenna |
06/19/2013 | EP2605283A2 In situ grown gate dielectric and field plate dielectric |
06/19/2013 | EP2605282A2 Diamond electrical switching device |
06/19/2013 | EP2605246A1 Self-referenced magnetic random access memory element comprising a synthetic storage layer |
06/19/2013 | EP2603930A1 Led package with efficient, isolated thermal path |
06/19/2013 | CN203013739U Schottky diode |
06/19/2013 | CN203013738U Constant current diode formed by grooving process |
06/19/2013 | CN203013737U Novel fast recovery diode |
06/19/2013 | CN203013736U MOS tube electrical resistor |