Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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07/04/2013 | US20130168669 Semiconductor device and manufacturing method thereof |
07/04/2013 | US20130168667 Thin film transistor |
07/04/2013 | US20130168666 Semiconductor device and method of forming the same |
07/04/2013 | US20130168640 Inverter device, nand device, nor device, and logic device including the same |
07/04/2013 | US20130167924 Composite poly-silicon substrate and solar cell having the same |
07/04/2013 | DE112011103061T5 Speichervorrichtung Memory device |
07/04/2013 | DE102012224291A1 Halbleitervorrichtung mit lateralem bipolarem Transistor und isoliertem Gate A semiconductor device comprising a lateral bipolar transistor and insulated-gate |
07/04/2013 | DE102012213880A1 Metallgateelektrodenstrukturen mit großem ε, die durch Entfernen eines Austrittsarbeitsmetalls an Seitenwänden in einer Austauschgatetechnik hergestellt ist Metal gate electrode structures with large ε, which is prepared by removing a work function metal on the side walls in a replacement gate technology |
07/04/2013 | DE102012113139A1 Leistungshalbleitervorrichtung und Herstellungsverfahren dafür Power semiconductor device and manufacturing method thereof |
07/04/2013 | DE102012109971A1 Verfahren zum Bilden von Halbleitervorrichtungen, bei dem elektrolysierte Schwefelsäure (ESA) verwendet wird A method for forming semiconductor devices is used in the electrolyzed sulfuric acid (ESA) |
07/04/2013 | DE102012000084A1 High energy density reversible electrical energy storage structure for vehicle, has P-type and N-type semiconductors which are penetrated with each other in form of complementary and electrically conductive coherent network |
07/04/2013 | DE102011119497B4 Band zu Band Tunnel-Feldeffekttransistor mit gradierter Halbleiterheterostruktur im Tunnelübergang und Verfahren zu dessen Herstellung Band to band tunneling field effect transistor having a graded semiconductor heterostructure in the tunnel junction and process for its preparation |
07/04/2013 | DE102007038152B4 Vertikaler Bipolartransistor und Verfahren zu seiner Herstellung A vertical bipolar transistor and method for its preparation |
07/04/2013 | DE102006043990B4 Halbleitervorrichtung Semiconductor device |
07/03/2013 | EP2610915A1 Transistor and method for manufacturing a transistor |
07/03/2013 | EP2610914A1 Semiconductor element and semiconductor device |
07/03/2013 | EP2610913A1 Spin-based device |
07/03/2013 | EP2610912A1 SiC SEMICONDUCTOR ELEMENT |
07/03/2013 | EP2610899A1 Method and device for forming organic thin film, and method for manufacturing of organic device |
07/03/2013 | EP2610898A1 Epitaxial substrate for semiconductor element, semiconductor element, method for fabricating epitaxial substrate for semiconductor element, and method for fabricating semiconductor element |
07/03/2013 | EP2609626A1 Power fet with a resonant transistor gate |
07/03/2013 | CN203038929U Veneering packaging diode |
07/03/2013 | CN203038928U Large current/ high voltage diode |
07/03/2013 | CN203038927U Semiconductor power device possessing terminal protection structure |
07/03/2013 | CN203038926U Semiconductor power device possessing terminal protection structure |
07/03/2013 | CN203038895U Semiconductor structure |
07/03/2013 | CN203038894U Semiconductor structure |
07/03/2013 | CN103189993A Semiconductor device and method for producing same |
07/03/2013 | CN103189992A Semiconductor device and manufacturing method therefor |
07/03/2013 | CN103189991A Gallium arsenide based materials used in thin film transistor applications |
07/03/2013 | CN103189990A Thin film semiconductor device and method for producing same |
07/03/2013 | CN103189989A Extended drain mos transistor |
07/03/2013 | CN103189988A Laterally diffused MOS transistor with reduced gate charge |
07/03/2013 | CN103189987A Hybrid active-field gap extended drain MOS transistor |
07/03/2013 | CN103189986A Transistor circuits for detection and measurement of chemical reactions and compounds |
07/03/2013 | CN103189985A Asymmetric hetero-structure FET and method of manufacture |
07/03/2013 | CN103189984A Semiconductor device |
07/03/2013 | CN103189971A Polyimides as dielectric |
07/03/2013 | CN103189970A Thin film semiconductor device, and method for producing thin film semiconductor device |
07/03/2013 | CN103189380A Chalcogen-containing aromatic compound, organic semiconductor material, and organic electronic device |
07/03/2013 | CN103187452A Nitride based semiconductor device and manufacturing method thereof |
07/03/2013 | CN103187451A 薄膜晶体管 The thin film transistor |
07/03/2013 | CN103187450A Semiconductor device with high breakdown voltage and manufacture thereof |
07/03/2013 | CN103187449A 半导体结构及其形成方法 And a method for forming a semiconductor structure |
07/03/2013 | CN103187448A 半导体结构及其形成方法 And a method for forming a semiconductor structure |
07/03/2013 | CN103187447A Pmos晶体管结构及其制造方法 Pmos transistor structure and its manufacturing method |
07/03/2013 | CN103187446A Multi-gate field effect transistor and manufacturing method thereof |
07/03/2013 | CN103187445A Fin field effect transistor and formation method thereof |
07/03/2013 | CN103187444A Ldmos晶体管及其制作方法 Ldmos transistor and manufacturing method thereof |
07/03/2013 | CN103187443A Lateral double-diffusion metal oxide semiconductor field effect transistor |
07/03/2013 | CN103187442A Integrated heterojunction semiconductor device and method for producing integrated heterojunction semiconductor device |
07/03/2013 | CN103187441A High electron mobility transistor and method of forming the same |
07/03/2013 | CN103187440A Semiconductor device having lateral insulated gate bipolar transistor |
07/03/2013 | CN103187439A Semiconductor structure, formation method of semiconductor structure, complementary metal-oxide-semiconductor transistor (CMOS) and formation method of CMOS |
07/03/2013 | CN103187438A Fin-like BJT |
07/03/2013 | CN103187437A Power devices and method for manufacturing the same |
07/03/2013 | CN103187436A High electron mobility transistor and method of forming the same |
07/03/2013 | CN103187435A High-voltage isolating N-type LDMOS device and manufacturing method thereof |
07/03/2013 | CN103187415A Thin film transistor array substrate, method for manufacturing the same, and annealing oven for performing the same method |
07/03/2013 | CN103187413A Vertical BJT and SCR for ESD |
07/03/2013 | CN103187367A Manufacturing method of semiconductor element with metal grid electrode |
07/03/2013 | CN103187310A Complementary junction field effect transistor (c-JFET) device and rear grid electrode manufacturing method thereof |
07/03/2013 | CN103187309A 结型场效应晶体管及其制造方法 Junction field-effect transistor and manufacturing method thereof |
07/03/2013 | CN103187308A Technotron and forming method thereof |
07/03/2013 | CN103187307A Thin film transistor using multiple active channel layers |
07/03/2013 | CN103187305A Method for fabricating a semiconductor device with increased reliability |
07/03/2013 | CN103187301A Trench type power transistor device with super junction and manufacturing method thereof |
07/03/2013 | CN103187300A Fin type field effect transistor and formation method of fin type field effect transistor |
07/03/2013 | CN103187298A 金属栅极场效应晶体管及其制作方法 Metal gate field effect transistor and manufacturing method thereof |
07/03/2013 | CN103187296A Formation method of fin type field effect transistor |
07/03/2013 | CN103187294A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
07/03/2013 | CN103187290A Fin field effect transistor and manufacturing method thereof |
07/03/2013 | CN103187285A Semiconductor structure and formation method thereof |
07/03/2013 | CN103187283A Graphene field-effect-transistor and manufacturing method thereof |
07/03/2013 | CN103187278A Manufacturing method of MOS field effect transistor and MOS field effect transistor |
07/03/2013 | CN103187277A Manufacture method of semiconductor device |
07/03/2013 | CN103187276A N-type MOS field-effect transistor and formation method thereof, semiconductor device and formation method of semiconductor device |
07/03/2013 | CN103187273A Mos晶体管及其制作方法 Mos transistor and manufacturing method thereof |
07/03/2013 | CN103187271A 二极管结构及其制造方法 Diode structure and its manufacturing method |
07/03/2013 | CN103187259A Complementary junction field effect transistor (c-JFET) device and rear grid electrode manufacturing method thereof |
07/03/2013 | CN103187255A Manufacturing method of high-K metal gate electrode and high-K metal gate structure thereof |
07/03/2013 | CN103187249A Semiconductor nanomaterial device and manufacturing method thereof |
07/03/2013 | CN103185997A Pixel structure and thin film transistor array substrate |
07/03/2013 | CN103185994A Pixel structure of dual-gate type thin film transistor liquid crystal display device |
07/03/2013 | CN102709328B Array substrate, manufacturing method thereof, display panel and display device |
07/03/2013 | CN102339865B Semiconductor strain metal oxide semiconductor (MOS) device provided with strain enhancement structure and preparation process for semiconductor strain metal oxide semiconductor (MOS) device |
07/03/2013 | CN102244105B Thyristor with high hold voltage and low triggering voltage ESD (electronstatic discharge) characteristic |
07/03/2013 | CN102184968B Thin film transistor with single-gate double-channel structure and manufacturing method thereof |
07/03/2013 | CN102084470B Capping layers for metal oxynitride TFTs |
07/03/2013 | CN101960276B Pressure sensor and method for manufacturing the same |
07/03/2013 | CN101911302B Semiconductor device and manufacturing method thereof |
07/03/2013 | CN101685835B Semiconductor device and method for manufacturing the same |
07/03/2013 | CN101604693B Memory devices |
07/03/2013 | CN101517653B Nonvolatile semiconductor storage device |
07/02/2013 | US8477531 Spin torque transfer magnetoresistive random access memory in disk base with reduced threshold current |
07/02/2013 | US8476949 Edge-triggered flip-flop design |
07/02/2013 | US8476774 Off-chip VIAS in stacked chips |
07/02/2013 | US8476771 Configuration of connections in a 3D stack of integrated circuits |
07/02/2013 | US8476769 Through-silicon vias and methods for forming the same |
07/02/2013 | US8476765 Copper interconnect structure having a graphene cap |