Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2013
06/13/2013US20130149823 Semiconductor device having silicon on stressed liner (sol)
06/13/2013US20130149821 Methods for a Gate Replacement Process
06/13/2013US20130149819 Thin film transistors, method of fabricating the same, and organic light-emitting diode device using the same
06/13/2013US20130149818 Method of fabricating array substrate
06/13/2013US20130149814 Thin film transistor array panel and method for manufacturing the same
06/13/2013US20130149813 Semiconductor device and manufacturing method the same
06/13/2013US20130148441 Ram memory cell comprising a transistor
06/13/2013US20130148422 Semiconductor Memory Having Both Volatile and Non-Volatile Functionality and Method of Operating
06/13/2013US20130148404 Antifuse-based memory cells having multiple memory states and methods of forming the same
06/13/2013US20130148398 Three-dimensional non-volatile memory device, memory system including the same and method of manufacturing the same
06/13/2013US20130148049 Display device
06/13/2013US20130148041 Semiconductor device
06/13/2013US20130147518 Logic circuit and semiconductor device
06/13/2013US20130147472 Micro-Fabricated Atomic Magnetometer and Method of Forming the Magnetometer
06/13/2013US20130147022 Semiconductor devices and methods of fabricating the same
06/13/2013US20130147021 Multi-layer substrate structure and manufacturing method for the same
06/13/2013US20130147017 Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases
06/13/2013US20130147007 Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate
06/13/2013US20130147006 Semiconductor memory device and method of fabricating the same
06/13/2013US20130146996 Magnetic device fabrication
06/13/2013US20130146993 Semiconductor structure having a polysilicon structure and method of forming same
06/13/2013US20130146992 Deep trench embedded gate transistor
06/13/2013US20130146985 Trench isolation structure
06/13/2013US20130146984 Semiconductor device and method of manufacturing the same
06/13/2013US20130146974 Semiconductor devices and methods of forming the same
06/13/2013US20130146973 Customized shield plate for a field effect transistor
06/13/2013US20130146969 Switching element and manufacturing method thereof
06/13/2013US20130146968 Semiconductor device and method for manufacturing the same
06/13/2013US20130146967 Trench-Gate Resurf Semiconductor Device and Manufacturing Method
06/13/2013US20130146966 Semiconductor structure with enhanced cap and fabrication method thereof
06/13/2013US20130146964 Method of producing a semiconductor device and semiconductor device
06/13/2013US20130146963 Methods of forming non-volatile memory
06/13/2013US20130146962 Semiconductor device and method of manufacturing the same
06/13/2013US20130146961 Three dimensional semiconductor memory device and method of manufacturing the same
06/13/2013US20130146960 Memory cells having a plurality of control gates and memory cells having a control gate and a shield
06/13/2013US20130146958 Method for forming buried bit line, semiconductor device having the same, and fabricating method thereof
06/13/2013US20130146956 Field effect transistors (fets) and methods of manufacture
06/13/2013US20130146951 Cross-hair cell wordline formation
06/13/2013US20130146950 Semiconductor device and manufacturing method thereof
06/13/2013US20130146949 Mechanisms for forming stressor regions in a semiconductor device
06/13/2013US20130146948 Micromechanical device and methods to fabricate same using hard mask resistant to structure release etch
06/13/2013US20130146947 SELF-ALIGNED EMITTER-BASE IN ADVANCED BiCMOS TECHNOLOGY
06/13/2013US20130146946 Semiconductor device and method for fabricating same
06/13/2013US20130146945 Field effect transistor with narrow bandgap source and drain regions and method of fabrication
06/13/2013US20130146944 Semiconductor device including stepped gate electrode and fabrication method thereof
06/13/2013US20130146943 In situ grown gate dielectric and field plate dielectric
06/13/2013US20130146942 Method for Making FinFETs and Semiconductor Structures Formed Therefrom
06/13/2013US20130146940 Design structure including voltage controlled negative resistance
06/13/2013US20130146907 Ultraviolet Reflective Contact
06/13/2013US20130146898 SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOF
06/13/2013US20130146897 4h-SiC SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE
06/13/2013US20130146896 Semiconductor optical device having an air media layer and the method for forming the air media layer thereof
06/13/2013US20130146895 Pinch-off control of gate edge dislocation
06/13/2013US20130146894 Bipolar junction transistor structure for reduced current crowding
06/13/2013US20130146890 High electron mobility transistor
06/13/2013US20130146889 Compound semiconductor device and manufacturing method of the same
06/13/2013US20130146888 Monolithic semiconductor device and method for manufacturing the same
06/13/2013US20130146886 Vertical GaN JFET with Gate Source Electrodes on Regrown Gate
06/13/2013US20130146885 Vertical GaN-Based Metal Insulator Semiconductor FET
06/13/2013US20130146884 Semiconductor device and method for manufacturing the same
06/13/2013US20130146883 Semiconductor thin film, thin film transistor, method for manufacturing same, and manufacturing equipment of semiconductor thin film
06/13/2013US20130146882 Semiconductor device and electronic device
06/13/2013US20130146881 Area sensor and display apparatus provided with an area sensor
06/13/2013US20130146879 Semiconductor device and method for manufacturing same
06/13/2013US20130146875 Split electrode for organic devices
06/13/2013US20130146871 Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
06/13/2013US20130146870 Method for manufacturing semiconductor device
06/13/2013US20130146869 Transistor and method for manufacturing the transistor
06/13/2013US20130146868 Field effect transistor
06/13/2013US20130146867 Display panel and display device
06/13/2013US20130146865 High-sensitivity transparent gas sensor and method for manufacturing the same
06/13/2013US20130146864 Thin film transistor display panel and manufacturing method thereof
06/13/2013US20130146863 High quality gan high-voltage hfets on silicon
06/13/2013US20130146862 Array substrate including thin film transistor and method of fabricating the same
06/13/2013US20130146847 Graphene field effect transistor
06/13/2013US20130146846 Graphene field effect transistor
06/13/2013US20130146845 Techniques for forming contacts to quantum well transistors
06/13/2013US20130146843 Segmented Nanowires Displaying Locally Controllable Properties
06/13/2013US20130146836 Cnt-based electronic and photonic devices
06/13/2013US20130146835 Nanostructures and methods for manufacturing the same
06/13/2013US20130146834 Quantum dot-matrix thin film and method of producing the same
06/13/2013US20130146830 Semiconductor Devices and Methods of Manufacturing the Same
06/13/2013US20130146452 Field effect transistor using oxide semiconductor and method for manufacturing the same
06/13/2013US20130145857 Nanowire stress sensors and stress sensor integrated circuits, design structures for a stress sensor integrated circuit, and related methods
06/13/2013DE112011102606T5 Transistor mit Metall-Ersatz-Gate-Zone und Verfahren zur Herstellung desselben Of the same transistor with metal replacement gate zone and methods for preparing
06/13/2013DE102012222651A1 Anchoring structure for metal structure of semiconductor device e.g. vertical power transistor, comprises anchoring recess structure comprising overhanging sidewall, which is formed by substrate of device having metal structure
06/13/2013DE102012222439A1 Halbleiterbauelement und dieses verwendende Leistungsumwandlungsausstattung Semiconductor device and this power conversion equipment used
06/13/2013DE102012111910A1 Halbleitervorrichtung, die ein erstes und ein zweites Halbleiterelement aufweist A semiconductor device comprising a first and a second semiconductor element
06/13/2013DE102012111788A1 Vorrichtung mit zwei Leistungshalbleiterchips und Verfahren für ihre Herstellung Device with two power semiconductor chips and methods for their preparation
06/13/2013DE102011052731B4 Verfahren zum Bilden einer Feldeffekt-Leistungshalbleitervorrichtung und Feldeffekt-Halbleitervorrichtung mit einer integrierten Polydiode A method of forming a field-effect power semiconductor device and the field effect semiconductor device with an integrated Polydiode
06/13/2013DE102007015304B4 Rückwärtsleitender (RC-) IGBT mit senkrecht angeordneter Ladungsträgerlebensdaueranpassung und Verfahren zur Herstellung eines rückwärtsleitenden IGBT Reverse-conducting (RC) IGBT with a vertically arranged carrier lifetime and adjustment method for manufacturing a reverse-conducting IGBT
06/12/2013EP2602830A1 Method for manufacturing semiconductor device and method for growing graphene
06/12/2013EP2602829A1 Trench-gate resurf semiconductor device and manufacturing method
06/12/2013EP2602828A1 Semiconductor device having isolation trenches
06/12/2013EP2602827A2 Enhancement mode III-nitride device and method for manufacturing thereof
06/12/2013EP2602826A1 Insulated gate power semiconductor device and method for manufacturing such a device
06/12/2013EP2602825A2 Quantum Dot Device including Different Kinds of Quantum Dot layers
06/12/2013EP2602824A1 Process for production of semiconductor device
06/12/2013EP2602823A1 Semiconductor device and process for production thereof
06/12/2013EP2602822A1 Semiconductor device and process for production thereof