Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2013
06/27/2013US20130161703 Sensor element array and method of fabricating the same
06/27/2013US20130161699 Semiconductor structures having nucleation layer to prevent interfacial charge for column iii-v materials on column iv or column iv-iv materials
06/27/2013US20130161698 E-mode hfet device
06/27/2013US20130161697 Replacement gate mosfet with raised source and drain
06/27/2013US20130161696 Tunnel field-effect transistor and methods for manufacturing thereof
06/27/2013US20130161695 Reduction of thickness variations of a threshold semiconductor alloy by reducing patterning non-uniformities prior to depositing the semiconductor alloy
06/27/2013US20130161694 Thin hetereostructure channel device
06/27/2013US20130161692 Shield wrap for a heterostructure field effect transistor
06/27/2013US20130161691 Semiconductor device
06/27/2013US20130161690 Semiconductor device
06/27/2013US20130161689 Insulated gate bipolar transistor structure having low substrate leakage
06/27/2013US20130161688 Semiconductor device and method of manufacturing the same
06/27/2013US20130161687 Bi-directional back-to-back stacked scr for high-voltage pin esd protection, methods of manufacture and design structures
06/27/2013US20130161663 Electro-optic displays, and components for use therein
06/27/2013US20130161651 Low 1c screw dislocation 3 inch silicon carbide wafer
06/27/2013US20130161650 Device with self aligned stressor and method of making same
06/27/2013US20130161649 Structure and method for increasing strain in a device
06/27/2013US20130161648 Diamond Semiconductor System and Method
06/27/2013US20130161647 Ingot, substrate, and substrate group
06/27/2013US20130161646 Semiconductor substrate
06/27/2013US20130161645 Semiconductor device
06/27/2013US20130161644 Semiconductor module
06/27/2013US20130161642 Semiconductor device and method for manufacturing the same
06/27/2013US20130161641 Transistor with enhanced channel charge inducing material layer and threshold voltage control
06/27/2013US20130161640 Nitride semiconductor device
06/27/2013US20130161639 Drain induced barrier lowering with anti-punch-through implant
06/27/2013US20130161638 High electron mobility transistor structure with improved breakdown voltage performance
06/27/2013US20130161637 Semiconductor devices including substrate layers and overlying semiconductor layers having closely matching coefficients of thermal expansion, and related methods
06/27/2013US20130161636 Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methods
06/27/2013US20130161635 Method and system for a gan self-aligned vertical mesfet
06/27/2013US20130161634 Method and system for fabricating edge termination structures in gan materials
06/27/2013US20130161633 Method and system for junction termination in gan materials using conductivity modulation
06/27/2013US20130161632 Organic light-emitting display apparatus and method of manufacturing organic light-emitting display apparatus
06/27/2013US20130161631 Display device and method for manufacturing the same
06/27/2013US20130161630 Thin-film semiconductor device and method for fabricating thin-film semiconductor device
06/27/2013US20130161629 Zero shrinkage smooth interface oxy-nitride and oxy-amorphous-silicon stacks for 3d memory vertical gate application
06/27/2013US20130161628 Flexible semiconductor device, method for manufacturing the same, image display device using the same and method for manufacturing the image display device
06/27/2013US20130161627 Photoelectric conversion apparatus, imaging apparatus using the same, and manufacturing method thereof
06/27/2013US20130161625 Array substrate and manufacturing method thereof
06/27/2013US20130161623 Semiconductor device
06/27/2013US20130161622 Thin film transistor substrate manufacturing method thereof, display
06/27/2013US20130161621 Semiconductor device and method for manufacturing the same
06/27/2013US20130161620 Composition for an oxide thin film, a preparation method of the composition, a method for forming an oxide thin film using the composition, an electronic device including the oxide thin film, and a semiconductor device including the oxide thin film
06/27/2013US20130161619 Semiconductor device and method for manufacturing same
06/27/2013US20130161618 Silicon-on-insulator (soi) structure configured for reduced harmonics and method of forming the structure
06/27/2013US20130161611 Semiconductor device and method for manufacturing the same
06/27/2013US20130161610 Semiconductor device and method for manufacturing the same
06/27/2013US20130161609 Semiconductor device and manufacturing method thereof
06/27/2013US20130161608 Semiconductor device
06/27/2013US20130161606 Semiconductor element, method for manufacturing the semiconductor element, and semiconductor device including the semiconductor element
06/27/2013US20130161605 Semiconductor device and method for manufacturing the same
06/27/2013US20130161604 Pixel structure and manufacturing method thereof
06/27/2013US20130161588 Implant Free Quantum Well Transistor, Method for Making Such an Implant Free Quantum Well Transistor and Use of Such an Implant Free Quantum Well Transistor
06/27/2013US20130161587 Graphene devices and methods of manufacturing the same
06/27/2013US20130161573 Lead-free conductive paste composition and semiconductor devices made therewith
06/27/2013US20130161572 Conductive paste composition with synthetic clay additive and its use in the manufacture of semiconductor devices
06/27/2013DE19647324B4 Halbleiterbauelement Semiconductor device
06/27/2013DE112011102528T5 Siliziumkarbid-Substrat, Halbleitervorrichtung und Verfahren zum Herstellen derselben Silicon carbide substrate, semiconductor device, and method for manufacturing the same
06/27/2013DE112011101969T5 Halbleitervorrichtung und Verfahren zum Herstellen derselben A semiconductor device and method of manufacturing the same
06/27/2013DE112010004021T5 Transistoren mit Halbleiterverbindungsschichten und Halbleiterkanalschichten unterschiedlichen Halbleitermaterials Transistors with compound semiconductor layers and semiconductor channel layers of different semiconductor material
06/27/2013DE112009000670B4 Verfahren zum Herstellen einer Metall-Gate-Struktur A method of manufacturing a metal gate structure
06/27/2013DE10205870B4 Moduleinheit mit SiC-Halbleiterbauelement mit Schottky-Kontakten Module unit with SiC semiconductor device with Schottky contacts
06/27/2013DE102012224047A1 Verbundhalbleiterbauelement mt vergrabener Feldplatte und Verfahren zum Herstellen eines Halbleiterbauelements Composite semiconductor device mt buried field plate and method for manufacturing a semiconductor device
06/27/2013DE102012223655A1 Bildung von Source-Drain-Erweiterungen in Metall-Ersatz-Gate-Transistoreinheit Formation of source-drain extensions in metal replacement gate transistor unit
06/27/2013DE102012222786A1 Verfahren zur fertigung einer halbleitervorrichtung A method of manufacturing a semiconductor device
06/27/2013DE102012220164A1 Halbleitermodul Semiconductor module
06/27/2013DE102012219644A1 Halbleitervorrichtung Semiconductor device
06/27/2013DE102012217336A1 Verfahren zum Ersetzen von Silicium durch Metall bei der Herstellung von Chips mit integrierten Schaltungen Method for replacing of silicon by metal in the manufacture of integrated circuit chips
06/27/2013DE102012217031A1 Halbleiterbauelement und herstellungsverfahren dafür Semiconductor device and manufacturing processes for
06/27/2013DE102011122906A1 Lateral transistor component e.g. MOSFET, has dielectric layer comprising transition region in which thickness increases toward another thickness and inclined at specific angle, and body region arranged between source and drift regions
06/27/2013DE102011122091A1 Schottky-Halbleiterprozess Schottky semiconductor process
06/26/2013EP2608272A1 N-channel LDMOS device
06/26/2013EP2608271A1 Shield Wrap for a Heterostructure Field Effect Transistor
06/26/2013EP2608270A2 Semiconductor device and method of manufacturing the same
06/26/2013EP2608269A1 Quantum well transistor, method for making such a quantum well transistor and use of such a quantum well transistor
06/26/2013EP2608268A1 Semiconductor device
06/26/2013EP2608267A1 P-type graphene base transistor
06/26/2013EP2608266A2 Semiconductor device having a gate electrode
06/26/2013EP2608265A2 Semiconductor device having a gate electrode
06/26/2013EP2608264A1 Method for manufacturing a field-effect semiconductor device following a replacement gate process
06/26/2013EP2608263A2 A tunnel field-effect transistor and methods for manufacturing thereof
06/26/2013EP2608249A1 Method for producing transistor
06/26/2013EP2161293B1 Conductive polymer suspension and method for producing the same, conductive polymer material, electrolytic capacitor, and solid electrolytic capacitor and method for producing the same
06/26/2013CN203026513U Variable capacitor with variable capacitance-voltage characteristics
06/26/2013CN203026512U Thin film transistor, array base plate and display device
06/26/2013CN203026511U IGBT layout
06/26/2013CN203026510U Ohmic contact electrode and semiconductor element comprising same
06/26/2013CN203026509U Semiconductor power device
06/26/2013CN203026507U 柔性显示装置 A flexible display device
06/26/2013CN103180961A 改进的肖特基整流器 Improved Schottky rectifiers
06/26/2013CN103180960A Structures and operating method for field-reset spin-torque mram
06/26/2013CN103180959A Semiconductor element and manufacturing method therefor
06/26/2013CN103180958A Trench dmos device with improved termination structure for high voltage applications
06/26/2013CN103180957A Hemt with floating and grounded substrate regions
06/26/2013CN103180956A Method of manufacturing a SiC bipolar junction transistor and sic bipolar junction transistor thereof
06/26/2013CN103180955A Power fet with a resonant transistor gate
06/26/2013CN103180935A Compound gan substrate and method for producing same, and group iii nitride semiconductor device and method for producing same
06/26/2013CN103178122A Iii-v semiconductor devices with buried contacts
06/26/2013CN103178121A Pin二极管及其制造方法 Pin diode and its manufacturing method
06/26/2013CN103178120A Fast recovery epitaxial diode (FRED) and preparation method thereof