Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2013
06/27/2013WO2013095341A1 Cmos implementation of germanium and iii-v nanowires and nanoribbons in gate-all-around architecture
06/27/2013WO2013095340A1 Pulsed laser anneal process for transistors with partial melt of a raised source-drain
06/27/2013WO2013094772A1 Semiconductor device
06/27/2013WO2013094688A1 Thin film transistor and method for fabricating thin film transistor
06/27/2013WO2013094621A1 Semiconductor device and method for manufacturing semiconductor device
06/27/2013WO2013094547A1 Semiconductor device and method for manufacturing the same
06/27/2013WO2013094495A1 Insulation-layer material for electronic device, and electronic device
06/27/2013WO2013094356A1 Semiconductor device and method of fabricating same
06/27/2013WO2013094328A1 Semiconductor device and method for producing same
06/27/2013WO2013094297A1 Semiconductor device and method for producing same
06/27/2013WO2013094287A1 Semiconductor device
06/27/2013WO2013094184A1 Active matrix substrate and method for producing same
06/27/2013WO2013094083A1 Group iii nitride semiconductor element, and method for producing same
06/27/2013WO2013093360A1 Method for producing a mos stack on a diamond substrate
06/27/2013WO2013092474A1 Novel heterocyclic fluorescent dyes and method of production thereof
06/27/2013WO2013091872A1 Method for producing a schottky diode
06/27/2013WO2013091656A1 Dynamic data collection system
06/27/2013WO2013091331A1 Cmos device for reducing charge sharing effect and preparation method therefor
06/27/2013WO2013057732A3 Ordered stacked sheets of layered inorganic compounds, nanostructures comprising them, processes for their preparation and uses thereof
06/27/2013WO2012083212A3 Magnetic random access memory integration having improved scaling
06/27/2013US20130164927 Semiconductor device and a manufacturing method thereof
06/27/2013US20130164923 Low voltage pnpn protection device
06/27/2013US20130164921 High-density nonvolatile memory and methods of making the same
06/27/2013US20130164900 Gated co-planar poly-silicon thin film diode
06/27/2013US20130164899 Semiconductor device and method for manufacturing the same
06/27/2013US20130164898 Carrier mobility in surface-channel transistors, apparatus made therewith, and system containing same
06/27/2013US20130164897 Transistors having argon gate implants and methods of forming the same
06/27/2013US20130164896 Voltage converter and systems including same
06/27/2013US20130164895 Trench-Gated Power Devices with Two Types of Trenches and Reliable Polycidation
06/27/2013US20130164892 Thin-film transistor device manufacturing method, thin-film transistor device, and display device
06/27/2013US20130164891 High density butted junction cmos inverter, and making and layout of same
06/27/2013US20130163340 Non-volatile storage system with three layer floating gate
06/27/2013US20130163325 Non-volatile memory device, method for fabricating the same, and method for operating the same
06/27/2013US20130163310 Resistive memory
06/27/2013US20130163139 Variable breakdown transient voltage suppressor
06/27/2013US20130162938 Liquid Crystal Display Device, Low Temperature Poly-Silicon Display Device, and Manufacturing Method Thereof
06/27/2013US20130162928 Liquid Crystal Display Device
06/27/2013US20130162925 Thin-film Transistor Substrate and Manufacturing Method Thereof and Liquid Crystal Display Device
06/27/2013US20130162727 Substrate, liquid ejection head having such substrate and method of manufacturing such substrate
06/27/2013US20130162623 Active matrix display device
06/27/2013US20130162327 Method and system for reduction of off-current in field effect transistors
06/27/2013US20130161799 Patterned Semiconductor Bases, and Patterning Methods
06/27/2013US20130161798 Graded density layer for formation of interconnect structures
06/27/2013US20130161797 Single crystal substrate, manufacturing method for single crystal substrate, manufacturing method for single crystal substrate with multilayer film, and element manufacturing method
06/27/2013US20130161794 Internally reformed substrate for epitaxial growth, internally reformed substrate with multilayer film, semiconductor device, bulk semiconductor substrate, and manufacturing methods therefor
06/27/2013US20130161793 Silicon Single Crystal Substrate and Method Of Manufacturing The Same
06/27/2013US20130161792 Semiconductor device having trench capacitor structure integrated therein
06/27/2013US20130161789 Method for Fabricating a DRAM Capacitor
06/27/2013US20130161786 Capacitor array and method of fabricating the same
06/27/2013US20130161784 Semiconductor package
06/27/2013US20130161783 Semiconductor device including isolation layer and method for fabricating the same
06/27/2013US20130161780 Method of fabricating a gan p-i-n diode using implantation
06/27/2013US20130161779 Super trench schottky barrier schottky diode
06/27/2013US20130161769 Magnetoresistive elements and memory devices including the same
06/27/2013US20130161768 Magnetic device having a magnetic material in a contact structure coupled to a magnetic element and method of manufacture thereof
06/27/2013US20130161767 Semiconductor devices having polysilicon gate patterns and methods of fabricating the same
06/27/2013US20130161766 Gate electrode having a capping layer
06/27/2013US20130161765 Mis type semiconductor device and production method therefor
06/27/2013US20130161764 Replacement gate having work function at valence band edge
06/27/2013US20130161763 Source-drain extension formation in replacement metal gate transistor device
06/27/2013US20130161762 Gate structure for semiconductor device
06/27/2013US20130161753 Semiconductor device and a manufacturing method thereof
06/27/2013US20130161751 Semiconductor device including transistors
06/27/2013US20130161746 Transistor and method of fabrication
06/27/2013US20130161745 Source-drain extension formation in replacement metal gate transistor device
06/27/2013US20130161744 Finfet with merged fins and vertical silicide
06/27/2013US20130161743 Source/drain extension control for advanced transistors
06/27/2013US20130161742 Semiconductor device and fabricating method thereof
06/27/2013US20130161741 Semiconductor device and method of manufacturing the same
06/27/2013US20130161740 Lateral High-Voltage Transistor with Buried Resurf Layer and Associated Method for Manufacturing the Same
06/27/2013US20130161739 Dummy gate for a high voltage transistor device
06/27/2013US20130161738 Semiconductor device
06/27/2013US20130161737 Semiconductor device and method of manufacturing the same
06/27/2013US20130161736 Trench metal oxide semiconductor transistor device and manufacturing method thereof
06/27/2013US20130161735 Transistor structure and method for preparing the same
06/27/2013US20130161734 Transistor structure and method for preparing the same
06/27/2013US20130161732 Vertical channel thin film transistor
06/27/2013US20130161731 Semiconductor device and method of manufacturing the same
06/27/2013US20130161729 Methods of Forming Isolation Structures on FinFET Semiconductor Devices
06/27/2013US20130161728 Fabricating method of mirror bit memory device having split ono film with top oxide film formed by oxidation process
06/27/2013US20130161727 Non-volatile memory device having stacked structure, and memory card and electronic system including the same
06/27/2013US20130161726 Non-volatile memory device and method for fabricating the same
06/27/2013US20130161725 Semiconductor memory device and method of manufacturing the same
06/27/2013US20130161724 3-dimensional non-volatile memory device, memory system including the same, and method of manufacturing the device
06/27/2013US20130161723 Electronic Device Including a Tunnel Structure
06/27/2013US20130161722 Semiconductor devices and methods of manufacturing the same
06/27/2013US20130161721 Eeprom cell
06/27/2013US20130161720 Eeprom cell
06/27/2013US20130161719 Integrated Nanostructure-Based Non-Volatile Memory Fabrication
06/27/2013US20130161718 Integrated circuit die and method of making
06/27/2013US20130161717 Non-volatile memory device and method for fabricating the same
06/27/2013US20130161714 Semiconductor device
06/27/2013US20130161711 Semiconductor device and method of manufacturing the semiconductor device
06/27/2013US20130161710 Semiconductor device having buried bit line and method for fabricating the same
06/27/2013US20130161709 Semiconductor device and method of manufacturing the same
06/27/2013US20130161708 Semiconductor structure and method for manufacturing the same
06/27/2013US20130161707 Resistive Memory and Methods for Forming the Same
06/27/2013US20130161706 Junction field effect transistor with an epitaxially grown gate structure
06/27/2013US20130161705 Method and system for a gan vertical jfet with self-aligned source and gate
06/27/2013US20130161704 Transferred thin film transistor and method for manufacturing the same
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