| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/06/2013 | DE102012023512A1 Silicon carbide-barrier layer-schottky diode, has trenches provided in region of silicon carbide layer with depth and in distance so that electrical field intensity at schottky-transition-boundary surface is equal to specific value or small |
| 06/06/2013 | DE102011087845A1 Laterales transistorbauelement und verfahren zu dessen herstellung Lateral transistor device and method of producing the |
| 06/06/2013 | DE102011087596A1 Super Trench Schottky Barrier Schottkydiode Super Trench Schottky Barrier Schottky |
| 06/06/2013 | DE102011087591A1 Hochspannungs-Trench-Junction-Barrier-Schottkydiode High-voltage trench junction barrier Schottky |
| 06/06/2013 | DE102011087487A1 Halbleiterbauelement mit optimiertem Randabschluss Semiconductor device with improved edge termination |
| 06/06/2013 | DE102011052489B4 Verfahren zur Herstellung einer Halbleiterstruktur und Halbleiterstruktur A process for producing a semiconductor structure and semiconductor structure |
| 06/06/2013 | DE102010030756B4 Austauschgateverfahren für Metallgatestapel mit großem ε auf der Grundlage eines nicht-konformen Zwischenschichtdielektrikums Replacement gate process for metal gate stack with large ε, based on a non-conformal interlevel |
| 06/06/2013 | DE102010000113B4 Halbleiterbauelement und Verfahren zur Herstellung A semiconductor device and method for producing |
| 06/06/2013 | DE102007030804B4 Halbleitervorrichtung Semiconductor device |
| 06/05/2013 | EP2600405A2 Super trench Schottky barrier diode |
| 06/05/2013 | EP2600404A2 GaN high voltage HFET with passivation plus gate dielectric multilayer structure |
| 06/05/2013 | EP2600403A1 A bipolar junction transistor having a high germanium concentration in a silicon-germanium layer and a method for forming the bipolar junction transistor |
| 06/05/2013 | EP2600402A1 Semiconductor device |
| 06/05/2013 | EP2600395A1 Precursor composition for forming amorphous metal oxide semiconductor layer, amorphous metal oxide semiconductor layer, method for producing same, and semiconductor device |
| 06/05/2013 | EP2600394A1 Epitaxial substrate for semiconductor element, semiconductor element, pn junction diode, and production method for epitaxial substrate for semiconductor element |
| 06/05/2013 | EP2600393A1 Semiconductor element, hemt element, and production method for semiconductor element |
| 06/05/2013 | EP2599126A1 Semiconductor devices with 2deg and 2dhg |
| 06/05/2013 | EP2599125A1 Semiconductor structure for an electronic power switch |
| 06/05/2013 | EP2599124A1 Electronic device structure with a semiconductor ledge layer for surface passivation |
| 06/05/2013 | EP2599112A2 Semiconductor device and structure |
| 06/05/2013 | EP2599111A1 Transistor with counter-electrode connection amalgamated with the source/drain contact |
| 06/05/2013 | EP2599110A2 Systems, methods and materials including crystallization of substrates via sub-melt laser anneal, as well as products produced by such processes |
| 06/05/2013 | EP2599107A2 Process for filling deep trenches in a semiconductor material body, and semiconductor device resulting from the same process |
| 06/05/2013 | EP2598804A2 Array column integrator |
| 06/05/2013 | CN202977428U Semiconductor capacitor and semiconductor device having the same |
| 06/05/2013 | CN202977427U Constant current diode unit structure |
| 06/05/2013 | CN202977426U Rear layout of reverse-conducting type IGBT (insulated gate bipolar transistor) |
| 06/05/2013 | CN202977425U Layout suitable for dummy-trench power device |
| 06/05/2013 | CN202977424U Groove formed on IGBT (insulated gate bipolar transistor) or VDMOS (vertical diffused metal oxide semiconductor) |
| 06/05/2013 | CN1750170B Integrated memory device and process |
| 06/05/2013 | CN103141026A Semiconductor device, power converter and method for controlling the power converter |
| 06/05/2013 | CN103140930A Non-planar quantum well device having interfacial layer and method of forming same |
| 06/05/2013 | CN103140929A Staggered thin film transistor and method of forming the same |
| 06/05/2013 | CN103140928A Field effect transistors having improved breakdown voltages and methods of forming the same |
| 06/05/2013 | CN103140920A Thin film transistor, method for manufacturing same, and image display device provided with thin film transistor |
| 06/05/2013 | CN103138746A Cmos 集成电路和放大电路 Cmos IC and amplifier |
| 06/05/2013 | CN103138745A Cmos integrated circuit and amplifying circuit |
| 06/05/2013 | CN103137712A Bottom anode schottky diode structure |
| 06/05/2013 | CN103137711A Schottky semiconductor device with insulating layer isolation structure and preparation method thereof |
| 06/05/2013 | CN103137710A Trench Schottky semiconductor device with various insulating layer isolation and preparation method thereof |
| 06/05/2013 | CN103137709A Transparent oxide semiconductor thin film transistors |
| 06/05/2013 | CN103137708A Active component and manufacture method thereof |
| 06/05/2013 | CN103137707A Composition of organic insulating layer and thin film transistor substrate and display device using the same |
| 06/05/2013 | CN103137706A Deep-depletion channel transistor based on strained silicon technology |
| 06/05/2013 | CN103137705A Semiconductor device and method of manufacturing the same |
| 06/05/2013 | CN103137704A Semiconductor device arrangement comprising a semiconductor device with a drift region and a drift control region |
| 06/05/2013 | CN103137703A 半导体器件 Semiconductor devices |
| 06/05/2013 | CN103137702A Semiconductor device and method of fabricating the same |
| 06/05/2013 | CN103137701A Transistor and semiconductor device |
| 06/05/2013 | CN103137700A Integrated mosfet device and method with reduced kelvin contact impedance and breakdown voltage |
| 06/05/2013 | CN103137699A Semiconductor device for power and method of manufacture thereof |
| 06/05/2013 | CN103137698A Mosfet and the method to make the same |
| 06/05/2013 | CN103137697A Power MOSFET and methods for forming the same |
| 06/05/2013 | CN103137696A Split-channel transistor and methods for forming the same |
| 06/05/2013 | CN103137695A Semiconductor storage unit, manufacturing method and storage unit array |
| 06/05/2013 | CN103137694A Surface channel field effect transistor and manufacture method thereof |
| 06/05/2013 | CN103137693A Design method for improving active device performance through nanometer technology |
| 06/05/2013 | CN103137692A High voltage laterally diffused metal oxide semiconductor (LDMOS) device and production method thereof |
| 06/05/2013 | CN103137691A Field effect transistor and manufacture method thereof |
| 06/05/2013 | CN103137690A Groove-type insulated gate field effect transistor and manufacture method thereof |
| 06/05/2013 | CN103137689A Semiconductor device with super junction ditch groove metal oxide semiconductor (MOS) structure and manufacture method thereof |
| 06/05/2013 | CN103137688A Semiconductor device with ditch groove metal oxide semiconductor (MOS) structure and manufacture method thereof |
| 06/05/2013 | CN103137687A Structure of groove type power metal oxide semiconductor (MOS) transistor and manufacture method thereof |
| 06/05/2013 | CN103137686A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 06/05/2013 | CN103137685A Semiconductor device and manufacturing method thereof |
| 06/05/2013 | CN103137684A Super junction structure semiconductor wafer with insulating layer isolation and preparation method thereof |
| 06/05/2013 | CN103137683A Pseudomorphic high electron mobility transistor and manufacturing method of the same |
| 06/05/2013 | CN103137682A High electron mobility transistor structure with improved breakdown voltage performance |
| 06/05/2013 | CN103137681A Circuit structure having islands between source and drain |
| 06/05/2013 | CN103137680A Power transistor device with super junction and manufacturing method thereof |
| 06/05/2013 | CN103137679A Insulated gate bipolar transistor device structure and manufacture method thereof |
| 06/05/2013 | CN103137678A Germanium-silicon heterogenous junction bipolar transistor and manufacturing method thereof |
| 06/05/2013 | CN103137677A Parasitic crosswise PNP triode and manufacturing method thereof in germanium-silicon heterojunction bipolar transistor (HBT) technology |
| 06/05/2013 | CN103137676A Germanium-silicon heterojunction bipolar transistor and production method thereof |
| 06/05/2013 | CN103137675A Germanium-silicon heterojunction bipolar transistor structure with high breakdown voltage and manufacture method thereof |
| 06/05/2013 | CN103137674A Semiconductor device and manufacturing method of the same |
| 06/05/2013 | CN103137673A Self-alignment bipolar transistor and manufacturing method thereof |
| 06/05/2013 | CN103137672A Grid electrode film structure of gold-oxygen-half-field-effect tube compatible with self-alignment hole and surface channel and manufacturing method thereof |
| 06/05/2013 | CN103137671A Multi-grid field effect transistor and manufacturing method thereof |
| 06/05/2013 | CN103137670A Asymmetric metal oxide semiconductor (MOS) structure under nanometer technology and design method thereof |
| 06/05/2013 | CN103137669A Microcrystalline silicon thin film transistor in perpendicular structure and preparation method thereof |
| 06/05/2013 | CN103137668A Metal oxide semiconductor field effect transistor (MOSFET) with lifted silicide source drain contact and manufacture method thereof |
| 06/05/2013 | CN103137667A Radio frequency laterally diffused metal oxide semiconductor (LDMOS) device with thermometal silicide and manufacturing method |
| 06/05/2013 | CN103137666A Vertical PNP bipolar junction transistor and production method thereof |
| 06/05/2013 | CN103137665A Ladder-shaped graphene nano strip electronic switch |
| 06/05/2013 | CN103137664A Bridging grain polycrystalline silicon thin film transistor |
| 06/05/2013 | CN103137663A Parasitic transversal NPN component and manufacturing method |
| 06/05/2013 | CN103137662A Germanium-silicon heterojunction bipolar transistor and manufacturing method thereof |
| 06/05/2013 | CN103137661A Lateral double diffusion metal-oxide semiconductor device and method for manufacturing the same |
| 06/05/2013 | CN103137660A Super junction powder device terminal structure |
| 06/05/2013 | CN103137659A Memory element and manufacturing method thereof |
| 06/05/2013 | CN103137658A Pressure-proof layer formed by insulator with conductive particles of semiconductor device and semiconductor |
| 06/05/2013 | CN103137657A Semiconductor integrated device and forming method thereof |
| 06/05/2013 | CN103137656A Silicon substrate, epitaxial structure, and method of manufacturing the silicon substrate and epitaxial structure |
| 06/05/2013 | CN103137655A Power metal-oxide-semiconductor field effect transistor (MOSFET) component with bottom source electrode and manufacture method thereof |
| 06/05/2013 | CN103137628A Thin film transistor (TFT) array substrate for display device and manufacturing method thereof |
| 06/05/2013 | CN103137627A Memory element and manufacturing method thereof |
| 06/05/2013 | CN103137626A Plane floating gate flash memory device and preparation method thereof |
| 06/05/2013 | CN103137621A Semiconductor device and method of manufacturing the same |
| 06/05/2013 | CN103137619A Picture element structure and manufacture method thereof |