Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2013
12/31/2013US8618582 Edge termination structure employing recesses for edge termination elements
12/31/2013US8618578 Field effect transistor
12/31/2013US8618577 Compound semiconductor device and manufacturing method thereof
12/31/2013US8618576 Semiconductor device with back side metal structure
12/31/2013US8618557 Wide-band-gap reverse-blocking MOS-type semiconductor device
12/31/2013US8618556 FinFET design and method of fabricating same
12/31/2013US8618555 Silicon carbide semiconductor device and method of manufacturing the same
12/31/2013US8618554 Method to reduce ground-plane poisoning of extremely-thin SOI (ETSOI) layer with thin buried oxide
12/31/2013US8618553 Process for producing silicon carbide crystals having increased minority carrier lifetimes
12/31/2013US8618552 Low micropipe 100 mm silicon carbide wafer
12/31/2013US8618548 Thin film transistor array panel with overlapping floating electrodes and pixel electrodes
12/31/2013US8618547 Mask assembly and organic light emitting diode display manufactured using the same
12/31/2013US8618545 Thin film transistor and display
12/31/2013US8618544 Thin film transistor and display device
12/31/2013US8618543 Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor
12/31/2013US8618542 Response and header circuitry with command and frame marker inputs
12/31/2013US8618538 Thin film transistor array panel and manufacturing method thereof
12/31/2013US8618537 Semiconductor device and method for manufacturing the same
12/31/2013US8618536 Organic light-emitting element, display panel, display device, and manufacturing method for organic light-emitting element
12/31/2013US8618535 Donor film for thermal transfer, method of manufacturing the same, and method of manufacturing organic light-emitting device using the donor film
12/31/2013US8618534 Field-effect transistor with a dielectric layer having therein denatured albumen
12/31/2013US8618532 Organic thin-film transistor
12/31/2013US8618527 Memory element and memory device
12/31/2013US8617960 Silicon microphone transducer
12/31/2013US8617959 Resistive memory and methods of processing resistive memory
12/31/2013US8617956 Method and structure for forming high-K/metal gate extremely thin semiconductor on insulator device
12/31/2013US8617940 SOI device with a buried insulating material having increased etch resistivity
12/31/2013US8617920 Semiconductor device and manufacturing method thereof
12/31/2013US8617910 Display device and a method of manufacturing the same
12/27/2013WO2013192357A1 Current aperture diode and method of fabricating same
12/27/2013WO2013192119A1 Epitaxial growth of smooth and highly strained germanium
12/27/2013WO2013191266A1 Sputtering target and method for using the same
12/27/2013WO2013191044A1 Semiconductor device and method for producing same
12/27/2013WO2013191033A1 Semiconductor device and method for producing same
12/27/2013WO2013190997A1 Semiconductor device
12/27/2013WO2013190992A1 Method for manufacturing thin film transistor
12/27/2013WO2013190907A1 Silicon carbide semiconductor device
12/27/2013WO2013190901A1 Silicon carbide semiconductor device and method for producing same
12/27/2013WO2013190882A1 Metal oxide transistor
12/27/2013WO2013190863A1 Stacked semiconductor device and method for manufacturing same
12/27/2013WO2013190838A1 Tft substrate, method for producing same, organic el display device, and method for manufacturing organic el display device
12/27/2013WO2013190815A1 Method for manufacturing active matrix substrate and method for manufacturing display apparatus
12/27/2013WO2013190759A1 Solid-state imaging element and method for manufacturing same
12/27/2013WO2013189127A1 Semiconductor structure and fabrication method therefor
12/27/2013WO2013189057A1 Array substrate, liquid crystal display device and manufacture method for array substrate
12/27/2013WO2013121289A3 Gallium nitride nanowire based electronics
12/26/2013US20130344691 Methods of Forming Electrical Contacts
12/26/2013US20130344672 Semiconductor device with self-biased isolation
12/26/2013US20130344671 Semiconductor device
12/26/2013US20130344670 Manufacturing method of anti punch-through leakage current metal-oxide-semiconductor transistor
12/26/2013US20130344668 Strain-inducing semiconductor regions
12/26/2013US20130344666 Methods of Fabricating Semiconductor Devices Having Increased Areas of Storage Contacts
12/26/2013US20130344665 Semiconductor device and method of forming the same
12/26/2013US20130344664 Field effect transistor having germanium nanorod and method of manufacturing the same
12/26/2013US20130344663 Reverse block-type insulated gate bipolar transistor manufacturing method
12/26/2013US20130344650 Semiconductor device and method for manufacturing the same
12/26/2013US20130344630 Durable Non-Wetting Coating on Fluid Ejector
12/26/2013US20130343122 Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element
12/26/2013US20130342196 Vertical Hall Device Comprising a Slot in the Hall Effect Region
12/26/2013US20130341792 Method for producing graphene, graphene produced on substrate, and graphene on substrate
12/26/2013US20130341771 Protective structure
12/26/2013US20130341770 Radiation hardened soi structure and method of making same
12/26/2013US20130341767 Semiconductor device mounting structure, method of manufacturing the same, and electronic apparatus
12/26/2013US20130341764 Method for manufacturing a diode, and a diode
12/26/2013US20130341761 Methods for extending ion source life and improving ion source performance during carbon implantation
12/26/2013US20130341756 Semiconductor on glass substrate with stiffening layer and process of making the same
12/26/2013US20130341755 Soi substrate, method for manufacturing soi substrate, and method for manufacturing semiconductor device
12/26/2013US20130341754 Shallow trench isolation structures
12/26/2013US20130341752 Two-dimensional guard structure and a radiation detector with the same
12/26/2013US20130341739 Package structure having micro-electro-mechanical system element and method of fabrication the same
12/26/2013US20130341735 Anodically bonded strain isolator
12/26/2013US20130341726 Mos transistor, formation method thereof, and sram memory cell circuit
12/26/2013US20130341725 Semiconductor constructions
12/26/2013US20130341721 Semiconductor wafer, field-effect transistor, method of producing semiconductor wafer, and method of producing field-effect transistor
12/26/2013US20130341720 Implementing gate within a gate utilizing replacement metal gate process
12/26/2013US20130341719 Hybrid High Voltage Device and Manufacturing Method Thereof
12/26/2013US20130341718 Power semiconductor device
12/26/2013US20130341717 Semiconductor Device with Floating RESURF Region
12/26/2013US20130341716 Semiconductor device and method for manufacturing semiconductor device
12/26/2013US20130341715 Power transistor and associated method for manufacturing
12/26/2013US20130341714 Semiconductor device having power metal-oxide-semiconductor transistor
12/26/2013US20130341713 Semiconductor devices and methods for manufacturing the same
12/26/2013US20130341712 Trench shielding structure for semiconductor device and method
12/26/2013US20130341711 Semiconductor device
12/26/2013US20130341710 Method of fabricating semiconductor device
12/26/2013US20130341709 Semiconductor device with electrode including intervention film
12/26/2013US20130341708 Semiconductor device and method of manufacturing the semiconductor device
12/26/2013US20130341707 Semiconductor device
12/26/2013US20130341706 Semiconductor memory device and manufacturing method of the same
12/26/2013US20130341705 Schottky diode integrated into ldmos
12/26/2013US20130341704 Variable gate width for gate all-around transistors
12/26/2013US20130341703 Semiconductor memory device and method for manufacturing the same
12/26/2013US20130341702 Vertical Memory Device and Method for Making Thereof
12/26/2013US20130341701 Vertical Semiconductor Memory Device and Manufacturing Method Thereof
12/26/2013US20130341700 P-type control gate in non-volatile storage
12/26/2013US20130341699 Nonvolatile semiconductor memory device and method of manufacturing the same
12/26/2013US20130341698 Nonvolatile semiconductor memory device and method of manufacturing
12/26/2013US20130341689 Method of forming a self-aligned charge balanced power dmos
12/26/2013US20130341688 Semiconductor device and method for fabricating semiconductor device
12/26/2013US20130341687 Metal silicide layer, nmos transistor, and fabrication method
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