Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2014
03/06/2014US20140061671 Wide gap semiconductor device and method for manufacturing same
03/06/2014US20140061670 Wide gap semiconductor device and method for manufacturing the same
03/06/2014US20140061669 Chip package and a method for manufacturing a chip package
03/06/2014US20140061668 GaN Single Crystal Substrate and Method of Manufacturing Thereof and GaN-based Semiconductor Device and Method of Manufacturing Thereof
03/06/2014US20140061666 Method and apparatus for producing large, single-crystals of aluminum nitride
03/06/2014US20140061665 Nitride semiconductor wafer
03/06/2014US20140061663 Semiconductor buffer structure, semiconductor device including the same, and manufacturing method thereof
03/06/2014US20140061662 Group iii nitride wafer and its production method
03/06/2014US20140061659 GaN Dual Field Plate Device with Single Field Plate Metal
03/06/2014US20140061658 High Electron Mobility Transistor and Manufacturing Method Thereof
03/06/2014US20140061657 Array substrate for organic electroluminescent display device and method of fabricating the same
03/06/2014US20140061655 Method for extreme ultraviolet electrostatic chuck with reduced clamping effect
03/06/2014US20140061653 Substrate including oxide thin film transistor, method for fabricating the same, and driving circuit for liquid crystal display device using the same
03/06/2014US20140061650 Transistor structures and methods of fabrication thereof
03/06/2014US20140061649 High performance thin film transistor
03/06/2014US20140061648 Thin film transistor including dielectric stack
03/06/2014US20140061647 Field-Effect Semiconductor Device and Manufacturing Method Therefor
03/06/2014US20140061645 Thin Film Transistor Array Substrate, Manufacturing Method Thereof, And Display Device
03/06/2014US20140061644 Super-junction semiconductor device
03/06/2014US20140061641 Metrology test structures in test dies
03/06/2014US20140061640 Semiconductor device
03/06/2014US20140061637 Corrosive Resistant Electronic Components
03/06/2014US20140061634 Thin film transistor, method for manufacturing the same, array substrate and display device
03/06/2014US20140061633 Oxide tft and manufacturing method thereof
03/06/2014US20140061631 Thin film transistor and manufacturing method thereof
03/06/2014US20140061590 Graphene device and method of manufacturing the same
03/06/2014US20140061589 Germanium-based quantum well devices
03/06/2014US20140061587 Nitride semiconductor device and method of manufacturing the same
03/06/2014US20140061583 Silicon nanotube mosfet
03/06/2014US20140061582 Suspended nanowire structure
03/06/2014US20140060210 Pressure sensor and pressure sensing method
03/06/2014DE112012002434T5 Bipolartransistoren mit einem die intrinsische und die extrinsische Basis verbindenden Verbindungsbereich Bipolar transistors with an intrinsic and extrinsic base connecting the connecting area
03/06/2014DE112012002075T5 Laterale Halbleitervorrichtung Lateral semiconductor device
03/06/2014DE112012001612T5 Bipolartransistor in Siliziumkarbid mit verbesserter Durchbruchsspannung Bipolar transistor in silicon carbide with improved breakdown voltage
03/06/2014DE112010004330B4 Verfahren mit asymmetrischer Epitaxie zur Herstellung von Feldeffekttransistoren A process for the preparation of asymmetric epitaxial field effect transistors
03/06/2014DE102013217225A1 Halbleiterbauelement mit einer Passivierungsschicht und Verfahren zu dessen Herstellung A semiconductor device with a passivation layer and process for its preparation
03/06/2014DE102013214300A1 Verfahren zum Bilden einer Materialschicht in einer Halbleiterstruktur A method of forming a material layer in a semiconductor structure
03/06/2014DE102013101162A1 System und verfahren für einen feldeffekttransistor mit einer angehobenen drain-struktur System and method for a field effect transistor with a raised drain structure
03/06/2014DE102012111503A1 Leistungshalbleiterbauelement und Verfahren zu dessen Herstellung Power semiconductor device and process for its preparation
03/06/2014DE102012104425B4 Integrierbare Elektrode mit nichtflüchtig positionierbarer, statisch geladener Grenzschicht, Aufbau und Verwendung Integrable electrode with non-volatile positionable, statically charged boundary layer structure and use
03/06/2014DE102011003439B4 Verfahren zur Durchlassstromerhöhung in Feldeffekttransistoren durch asymmetrische Konzentrationsprofile von Legierungssubstanzen einer Kanalhalbleiterlegierung und Halbleiterbauelement A method for forward current increase in field-effect transistors by asymmetric concentration profiles of alloy substances of a channel semiconductor alloy and semiconductor device
03/06/2014DE102005013785B4 Lichtquellenmodul und Fahrzeugscheinwerfer Light source module and vehicle headlights
03/05/2014EP2704200A1 Method of adjusting the threshold voltage of a transistor by buried trapping layers.
03/05/2014EP2704199A1 Semiconductor device and method of manufacturing thereof
03/05/2014EP2702611A1 Superjunction structures for power devices and methods of manufacture
03/05/2014CN203466197U Semiconductor structure
03/05/2014CN203466196U Insulated gate semiconductor device structure
03/05/2014CN203466192U Array substrate and display device
03/05/2014CN203465496U Array substrate and liquid crystal display device
03/05/2014CN103620962A Switching circuit and semiconductor module
03/05/2014CN103620790A Metal oxide metal capacitor structures
03/05/2014CN103620789A 3D vertical NAND and method of making thereof by front and back side processing
03/05/2014CN103620788A Method of IGZO and ZNO TFT fabrication with PECVD SiO2 passivation
03/05/2014CN103620787A Integrated circuit comprising a mosfet having ballast resistors and corresponding manufacturing method
03/05/2014CN103620786A DMOS transistor with a slanted super junction drift structure
03/05/2014CN103620780A 碳化硅半导体器件 Silicon carbide semiconductor device
03/05/2014CN103620751A Nitride semiconductor device and method for manufacturing same
03/05/2014CN103620750A Semiconductor device and method for producing same
03/05/2014CN103620749A Field effect transistor devices with low source resistance
03/05/2014CN103620748A Preserving stress benefits of uv curing in replacement gate transistor fabrication
03/05/2014CN103620741A Method for manufacturing semiconductor device
03/05/2014CN103620084A Sputtering target
03/05/2014CN103618006A A fast recovery diode and a manufacturing method thereof
03/05/2014CN103618005A High-speed junction field effect transistor used in bipolar integrated circuit
03/05/2014CN103618004A Thin film transistor and manufacturing method thereof, array substrate, and display device
03/05/2014CN103618003A High-electronic-mobility transistor with improved grid electrode
03/05/2014CN103618002A P-type insulated gate bipolar transistor structure
03/05/2014CN103618001A N-type insulated gate bipolar transistor structure
03/05/2014CN103618000A Bipolar transistor for manufacturing offset crystal lattice
03/05/2014CN103617996A ESD protective device with high-holding-current annular VDMOS structure
03/05/2014CN103311130B Amorphous metallic oxide film transistor and preparation method thereof
03/05/2014CN102544085B Bidirectional silicon controlled device based on assistant triggering of PMOS (P-channel Metal Oxide Semiconductor) tubes
03/05/2014CN102543722B High-voltage transient voltage suppressor chip and production process
03/05/2014CN102487014B Semiconductor structure and manufacture method thereof
03/05/2014CN102479802B Semiconductor device
03/05/2014CN102354704B Manufacturing method of Schottky diode with high reverse-blocking performance
03/05/2014CN102299180B Semiconductor device including cell region and peripheral region having high breakdown voltage structure
03/05/2014CN102270660B Self-aligned contact for trench MOSFET
03/05/2014CN102194878B Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET and method
03/05/2014CN102148239B Insulated gate semiconductor device
03/05/2014CN102142458B MOS (Metal Oxide Semiconductor) field effect transistor
03/05/2014CN102110716B Trench type semiconductor power device
03/05/2014CN102082093B Manufacturing technique of chip for two-way voltage regulator diode DB3
03/05/2014CN102074461B Semiconductor device and method of fabricating same
03/05/2014CN102054873B Display and thin film transistor array substrate and thin film transistors thereof
03/05/2014CN102027589B Nonvolatile semiconductor memory device and manufacturing method thereof
03/05/2014CN101930974B Bottom source NMOS triggered zener clamp for configuring ultra-low voltage transient voltage suppressor (TVS)
03/04/2014US8665661 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield
03/04/2014US8664780 Semiconductor package having plural semiconductor chips and method of forming the same
03/04/2014US8664777 Routing layer for mitigating stress in a semiconductor die
03/04/2014US8664772 Interface substrate with interposer
03/04/2014US8664769 Semiconductor device
03/04/2014US8664768 Interposer having a defined through via pattern
03/04/2014US8664764 Semiconductor device including a core substrate and a semiconductor element
03/04/2014US8664760 Connector design for packaging integrated circuits
03/04/2014US8664759 Integrated circuit with heat conducting structures for localized thermal control
03/04/2014US8664757 High density chip stacked package, package-on-package and method of fabricating the same
03/04/2014US8664747 Trenched substrate for crystal growth and wafer bonding
03/04/2014US8664746 Gettering method for dielectrically isolated devices
03/04/2014US8664743 Air-gap formation in interconnect structures
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