Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2014
02/13/2014US20140045309 Vertical conduction power electronic device and corresponding realization method
02/13/2014US20140045308 Semiconductor storage device and method for manufacturing the same
02/13/2014US20140045304 Coupling Well Structure for Improving HVMOS Performance
02/13/2014US20140043096 Polysilicon diode bandgap reference
02/13/2014US20140042598 Composite substrate and method of manufacturing the same
02/13/2014US20140042597 Semiconductor device including a stress relief layer and method of manufacturing
02/13/2014US20140042595 Method of manufacturing a semiconductor device including grinding from a back surface and semiconductor device
02/13/2014US20140042594 Inhibiting propagation of imperfections in semiconductor devices
02/13/2014US20140042593 Semiconductor device including a trench in a semiconductor substrate and method of manufacturing a semiconductor device
02/13/2014US20140042592 Bipolar transistor
02/13/2014US20140042591 Capacitor arrangements and method for manufacturing a capacitor arrangement
02/13/2014US20140042590 Metal-Insulator-Metal Capacitor and Method of Fabricating
02/13/2014US20140042588 Semiconductor memory device and method of manufacturing the same
02/13/2014US20140042587 Semiconductor-on-insulator device with asymmetric structure
02/13/2014US20140042586 Silicon substrate and method of fabricating the same
02/13/2014US20140042565 Apparatus Comprising and a Method for Manufacturing an Embedded MEMS Device
02/13/2014US20140042564 Integrated-circuit switch
02/13/2014US20140042562 MEMS Devices and Methods for Forming the Same
02/13/2014US20140042561 Replacement gate electrode with planar work function material layers
02/13/2014US20140042560 Multi-layer gate dielectric
02/13/2014US20140042559 High-k layers, transistors, and fabrication method
02/13/2014US20140042558 Method of fabrication of semiconductor device
02/13/2014US20140042556 Fin Field Effect Transistor Devices With Self-Aligned Source and Drain Regions
02/13/2014US20140042555 Semiconductor device having semiconductor pillar
02/13/2014US20140042554 Semiconductor device and method for fabricating the same
02/13/2014US20140042553 Profile pre-shaping for replacement poly gate interlayer dielectric
02/13/2014US20140042552 Semiconductor device and method of manufacturing same
02/13/2014US20140042546 Structure and method to form input/output devices
02/13/2014US20140042545 Mos transistors having reduced leakage well-substrate junctions
02/13/2014US20140042544 Semiconductor device
02/13/2014US20140042543 Mosfet with recessed channel film and abrupt junctions
02/13/2014US20140042542 Mosfet with recessed channel film and abrupt junctions
02/13/2014US20140042541 Creating anisotropically diffused junctions in field effect transistor devices
02/13/2014US20140042539 Self-aligned thin film transistor with doping barrier and method of manufacturing the same
02/13/2014US20140042538 Rf ldmos device and fabrication method thereof
02/13/2014US20140042537 Semiconductor Device and Method of Making the Same
02/13/2014US20140042536 Trench-based power semiconductor devices with increased breakdown voltage characteristics
02/13/2014US20140042535 Trench transistors and methods with low-voltage-drop shunt to body diode
02/13/2014US20140042533 Segmented Pillar Layout for a High-Voltage Vertical Transistor
02/13/2014US20140042532 Trench-based power semiconductor devices with increased breakdown voltage characteristics
02/13/2014US20140042531 Semiconductor device and method for fabricating the same
02/13/2014US20140042530 Semiconductor device and method of fabricating the same
02/13/2014US20140042529 Semiconductor device and manufactruing method of the same
02/13/2014US20140042528 Semiconductor device and method for fabricating the same
02/13/2014US20140042527 High voltage metal-oxide-semiconductor transistor device
02/13/2014US20140042526 Method for producing a semiconductor device and semiconductor device
02/13/2014US20140042524 Device with a Vertical Gate Structure
02/13/2014US20140042523 Semiconductor device and manufacturing method of the same
02/13/2014US20140042522 Rf ldmos device and fabrication method thereof
02/13/2014US20140042521 Mosfet with recessed channel film and abrupt junctions
02/13/2014US20140042520 Three-dimensional semiconductor memory devices
02/13/2014US20140042519 Nonvolatile memory device and method for fabricating the same
02/13/2014US20140042518 Semiconductor device and method of manufacturing the same
02/13/2014US20140042517 Semiconductor memory device and manufacturing method thereof
02/13/2014US20140042516 Semiconductor memory device and manufacturing method thereof
02/13/2014US20140042515 High voltage device
02/13/2014US20140042514 Contacts for semiconductor devices
02/13/2014US20140042513 Non-volatile semiconductor storage device
02/13/2014US20140042511 Semiconductor device
02/13/2014US20140042508 Semiconductor memory devices
02/13/2014US20140042506 Transistors, Methods of Manufacture Thereof, and Image Sensor Circuits
02/13/2014US20140042505 Device active channel length/width greater than channel length/width
02/13/2014US20140042504 Method for manufacturing semiconductor device and semiconductor device
02/13/2014US20140042503 Semiconductor memory device having an electrically floating body transistor
02/13/2014US20140042502 Semiconductor devices with self-aligned contacts and low-k spacers
02/13/2014US20140042501 Mos transistor and process thereof
02/13/2014US20140042500 Contact structure of semiconductor device
02/13/2014US20140042499 Stress enhanced high voltage device
02/13/2014US20140042497 Semiconductor physical quantity sensor and method for manufacturing the same
02/13/2014US20140042494 Metal nanoparticle monolayer
02/13/2014US20140042493 Semiconductor substrate and method of fabricating the same
02/13/2014US20140042492 Semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the semiconductor buffer structure
02/13/2014US20140042491 Gate electrode of field effect transistor
02/13/2014US20140042490 Nanotube semiconductor devices
02/13/2014US20140042462 Semiconductor device and method for manufacturing the same
02/13/2014US20140042461 Silicon carbide semiconductor device and method for manufactuing same
02/13/2014US20140042460 Silicon carbide semiconductor device
02/13/2014US20140042459 Silicon carbide schottky diode
02/13/2014US20140042458 Growth of multi-layer group iii-nitride buffers on large-area silicon substrates and other substrates
02/13/2014US20140042457 Schottky diode
02/13/2014US20140042455 Field effect transistor device
02/13/2014US20140042453 Silicon carbide semiconductor device and method for manufacturing same
02/13/2014US20140042452 Iii-nitride enhancement mode transistors with tunable and high gate-source voltage rating
02/13/2014US20140042451 Semiconductor device, hemt device, and method of manufacturing semiconductor device
02/13/2014US20140042449 High electron mobility transistor
02/13/2014US20140042448 High Breakdown Voltage III-Nitride Device
02/13/2014US20140042447 Method and system for gallium nitride electronic devices using engineered substrates
02/13/2014US20140042446 High electron mobility transistor and method of forming the same
02/13/2014US20140042444 Pixel structure and fabricating method of pixel structure
02/13/2014US20140042440 Passivation layer structure of semiconductor device and method for forming the same
02/13/2014US20140042438 Semiconductor device and manufacturing method thereof
02/13/2014US20140042437 Semiconductor device and manufacturing method thereof
02/13/2014US20140042436 Semiconductor device and method for fabricating the same
02/13/2014US20140042435 Semiconductor device and method for manufacturing the same
02/13/2014US20140042434 Semiconductor device and method for manufacturing the same
02/13/2014US20140042433 Semiconductor device and method for fabricating the same
02/13/2014US20140042431 Oxide semiconductor target and oxide semiconductor material, as well as semiconductor device using the same
02/13/2014US20140042430 Thin film transistor substrate
02/13/2014US20140042429 Thin film transistor substrate and method of manufacturing the same
02/13/2014US20140042427 Gate Insulator Loss Free Etch-Stop Oxide Thin Film Transistor
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