Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2014
03/26/2014CN103681838A Schottky MOS semi-conductor device and preparation method thereof
03/26/2014CN103681837A Molybdenum disulfide-cadmium selenide quantum dot hybrid field effect opto-transistor and manufacturing method thereof
03/26/2014CN103681836A Vertical microelectronic component and corresponding production method
03/26/2014CN103681835A Heterostructure transistor with multiple gate dielectric layers
03/26/2014CN103681834A Compound semiconductor device and method for manufacturing the same
03/26/2014CN103681833A Compound semiconductor device and method of manufacturing the same
03/26/2014CN103681832A Nitride compound semiconductor device and manufacturing method thereof
03/26/2014CN103681831A High-electron mobility transistor and manufacturing method for same
03/26/2014CN103681830A Double-channel transistor and preparation method for double-channel transistor
03/26/2014CN103681829A Silicon-based single electron transistor structure and preparation method thereof
03/26/2014CN103681828A Semiconductor device and method for fabricating the same
03/26/2014CN103681827A Fast switching igbt with embedded emitter shorting contacts and method for making same
03/26/2014CN103681826A Power semiconductor device
03/26/2014CN103681825A Semiconductor device
03/26/2014CN103681824A Power semiconductor device
03/26/2014CN103681823A Semiconductor device
03/26/2014CN103681822A Power semiconductor device and fabrication method thereof
03/26/2014CN103681821A 半导体器件 Semiconductor devices
03/26/2014CN103681820A Insulated gate bipolar transistor
03/26/2014CN103681819A Trench type insulated gate bipolar transistor and preparing method thereof
03/26/2014CN103681818A Device and method for eliminating lock effect of trench-type insulated gate bipolar transistor
03/26/2014CN103681817A IGBT (insulated gate bipolar translator) device and manufacturing method thereof
03/26/2014CN103681816A Bipolar transistor with floating ring structure
03/26/2014CN103681815A Transversal bipolar transistor with low-ratio on-resistance
03/26/2014CN103681814A Insulated gate bipolar transistor adopting trench groove structure and preparation method thereof
03/26/2014CN103681813A Insulated gate bipolar transistor with back groove structure and preparation method thereof
03/26/2014CN103681812A Insulated gate bipolar transistor with back groove structure and preparation method thereof
03/26/2014CN103681811A Insulated gate bipolar transistor at non-complete emitter region and preparation method thereof
03/26/2014CN103681810A Insulated gate bipolar transistor and preparation method thereof
03/26/2014CN103681809A Lateral bipolar transistor with composite structure
03/26/2014CN103681808A LBJT (Lateral Bipolar Junction Transistor) containing field plate structure
03/26/2014CN103681807A Bipolar junction transistor and manufacturing method thereof
03/26/2014CN103681806A Semiconductor device and method of manufacturing the same
03/26/2014CN103681805A Semiconductor device and method for fabricating same
03/26/2014CN103681804A Semiconductor device, method of fabricating the same, and module and system having the same
03/26/2014CN103681803A Semiconductor device, grid electrode structure of semiconductor device and manufacturing method of grid electrode structure
03/26/2014CN103681802A Semiconductor structure and manufacturing method thereof
03/26/2014CN103681801A Semiconductor structure and manufacturing method thereof
03/26/2014CN103681800A Multiple-time programmable semiconductor device and manufacture method thereof
03/26/2014CN103681799A Semiconductor device with a passivation layer
03/26/2014CN103681798A Semiconductor device
03/26/2014CN103681797A Semiconductor device and method of manufacturing same
03/26/2014CN103681796A Polysilicon diode bandgap reference
03/26/2014CN103681795A III-family nitride semiconductor structure and manufacturing method thereof
03/26/2014CN103681794A Semiconductor wafer, semiconductor device, and method for manufacturing nitride semiconductor layer
03/26/2014CN103681793A Laminated structure, member for semiconductor manufacturing apparatus, and method for producing laminated structure
03/26/2014CN103681792A Structure for improving puncture voltage of semiconductor electron device and semiconductor electron device
03/26/2014CN103681791A NLDMOS device and manufacture method
03/26/2014CN103681790A Back-trench insulated gate bipolar transistor and preparation method thereof
03/26/2014CN103681789A Drain-source area medium / PN junction isolated front-gate P/N-MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) radio frequency switch ultralow-loss device based on SOI (Silicon On Insulator) technology
03/26/2014CN103681788A Semiconductor device and manufacturing method thereof
03/26/2014CN103681787A Chip edge sealing
03/26/2014CN103681786A Semiconductor device
03/26/2014CN103681785A Semiconductor device
03/26/2014CN103681784A Semiconductor device including buried gate, module and system, and method for manufacturing
03/26/2014CN103681783A Silicon carbide semiconductor device
03/26/2014CN103681782A Method for extreme ultraviolet electrostatic chuck with reduced clamping effect
03/26/2014CN103681781A Buried PN junction barrier Schottky diode
03/26/2014CN103681780A High-voltage super-junction terminal structure
03/26/2014CN103681779A Field effect transistor structure and manufacturing method thereof
03/26/2014CN103681778A Groove charge compensation schottky semiconductor device and preparation method thereof
03/26/2014CN103681777A Junction field effect tube
03/26/2014CN103681776A Low-temperature polycrystalline silicon film, low-temperature polycrystalline silicon film preparation method, film transistor and display device
03/26/2014CN103681751A Thin film transistor array substrate and method for manufacturing same
03/26/2014CN103681698A Array substrate and display device
03/26/2014CN103681697A Array substrate and display device
03/26/2014CN103681696A Electrode lead-out structure, array substrate and display device
03/26/2014CN103681695A Thin-film transistor array substrate, manufacturing method thereof and liquid crystal display device
03/26/2014CN103681694A Flexible display substrate and flexible display device
03/26/2014CN103681693A Array substrate, manufacturing method of array substrate and display device
03/26/2014CN103681691A Semiconductor device and manufacturing method thereof
03/26/2014CN103681675A Semiconductor device and method for fabricating the same
03/26/2014CN103681672A Semiconductor device and method of fabricating the same
03/26/2014CN103681671A Semiconductor device having tungsten gate electrode and method for fabricating the same
03/26/2014CN103681670A Metal gate structure of a semiconductor device
03/26/2014CN103681668A Semiconductor device
03/26/2014CN103681664A Power semiconductor device and method of manufacturing power semiconductor device
03/26/2014CN103681660A High-voltage ESD protective device with dual latch-up resistance and of annular LDMOS-SCR structure
03/26/2014CN103681658A Bidirectional heterojunction compound semiconductor protection devices and methods of forming the same
03/26/2014CN103681657A Heterojunction compound semiconductor protection clamps and methods of forming the same
03/26/2014CN103681656A Diffusion resistor with reduced voltage coefficient of resistance and increased breakdown voltage using CMOS wells
03/26/2014CN103681652A Fin field effect transistor layout for stress optimization
03/26/2014CN103681560A A grooved IGBT module base plate and an IGBT module
03/26/2014CN103681547A Flat package crimping type extraction electrode insulated gate bipolar transistor element
03/26/2014CN103681514A Array substrate, manufacturing method thereof and display device
03/26/2014CN103681487A Thin film transistor substrate and manufacturing method thereof
03/26/2014CN103681483A Method for alleviating line breakage of transparent conducting layer and structure thereof
03/26/2014CN103681481A Array substrate and manufacture method thereof, display device
03/26/2014CN103681454A Isolation for semiconductor devices
03/26/2014CN103681353A Method for manufacturing a transistor device comprising a germanium based channel layer and microelectronic device
03/26/2014CN103681349A Method of forming polysilicon film, thin film transistor and display device
03/26/2014CN103681348A Trench MOSFET structures and manufacturing method therof
03/26/2014CN103681346A Transistors, semiconductor devices, and methods of manufacture thereof
03/26/2014CN103681345A Transistor and formation method thereof
03/26/2014CN103681340A Semiconductor device and manufacturing method thereof
03/26/2014CN103681338A Semiconductor device and manufacturing method thereof
03/26/2014CN103681337A Fin type field effect transistor and forming method thereof
03/26/2014CN103681331A Fin field-effect transistor (FET) and fin FET forming method
03/26/2014CN103681330A Fin and fin forming method
03/26/2014CN103681329A Semiconductor device and manufacture method thereof
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