Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2014
02/27/2014US20140057398 Memory Cells, Memory Arrays, Methods Of Forming Memory Cells, And Methods Of Forming A Shared Doped Semiconductor Region Of A Vertically Oriented Thyristor And A Vertically Oriented Access Transistor
02/27/2014US20140056080 Non-volatile memory device, method of operating the same and method of fabricating the same
02/27/2014US20140056076 Very dense nonvolatile memory bitcell
02/27/2014US20140056060 Method and system for providing a magnetic tunneling junction using spin-orbit interaction based switching and memories utilizing the magnetic tunneling junction
02/27/2014US20140055901 Solid state fault isolation devices and methods
02/27/2014US20140054788 Method for fabricating nanogap electrodes, nanogap electrodes array, and nanodevice with the same
02/27/2014US20140054759 Method of manufacturing semiconductor device
02/27/2014US20140054756 Anti spacer process and semiconductor structure generated by the anti spacer process
02/27/2014US20140054755 Methods of forming semiconductor device structures, and related semiconductor device structures
02/27/2014US20140054754 Optically reactive masking
02/27/2014US20140054748 Edge trimming method for semiconductor wafer and semiconductor wafer having trimmed edge
02/27/2014US20140054747 Bipolar transistor
02/27/2014US20140054744 Isolation Structure Profile for Gap Filing
02/27/2014US20140054743 Isolated Through Silicon Vias in RF Technologies
02/27/2014US20140054741 Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
02/27/2014US20140054728 Semiconductor structures provided within a cavity and related design structures
02/27/2014US20140054727 Method of selectively deglazing p205
02/27/2014US20140054726 Method of producing semiconductor wafer, semiconductor wafer, method of producing semiconductor device and semiconductor device
02/27/2014US20140054725 Transistor device and fabrication method
02/27/2014US20140054724 Aligned gate-all-around structure
02/27/2014US20140054723 Isolation structures for finfet semiconductor devices
02/27/2014US20140054721 Semiconductor devices and methods of fabricating the same
02/27/2014US20140054715 Semiconductor device with an inclined source/drain and associated methods
02/27/2014US20140054714 Replacement gate fabrication methods
02/27/2014US20140054711 System and Method for a Vertical Tunneling Field-Effect Transistor Cell
02/27/2014US20140054710 Reduction of Proximity Effects in Field-Effect Transistors with Embedded Silicon-Germanium Source and Drain Regions
02/27/2014US20140054709 Transistor Devices, Memory Cells, And Arrays Of Memory Cells
02/27/2014US20140054705 Silicon germanium channel with silicon buffer regions for fin field effect transistor device
02/27/2014US20140054704 Semiconductor device including an active region and two layers having different stress characteristics
02/27/2014US20140054701 Method of manufacturing transistor, transistor, array substrate and display device
02/27/2014US20140054699 Electronic device including shallow trench isolation (sti) regions with bottom oxide liner and upper nitride liner and related methods
02/27/2014US20140054697 Semiconductor device with field electrode and method
02/27/2014US20140054696 Novel latch-up immunity nldmos
02/27/2014US20140054695 High Side Gate Driver Device
02/27/2014US20140054694 Semiconductor Device with HCI Protection Region
02/27/2014US20140054693 Semiconductor device
02/27/2014US20140054692 Semiconductor device and a manufacturing method of the same
02/27/2014US20140054691 Field effect transistor with gated and non-gated trenches
02/27/2014US20140054690 Semiconductor device and fabricating method thereof
02/27/2014US20140054689 Semiconductor device and method for manufacturing the same
02/27/2014US20140054688 Semiconductor device
02/27/2014US20140054687 Mosfet device with reduced breakdown voltage
02/27/2014US20140054686 Devices, components and methods combining trench field plates with immobile electrostatic charge
02/27/2014US20140054685 Semiconductor device with improved linear and switching operating modes
02/27/2014US20140054684 Power Semiconductor Devices, Structures, and Related Methods
02/27/2014US20140054683 Trench devices having improved breakdown voltages and method for manufacturing same
02/27/2014US20140054682 Bidirectional field effect transistor and method
02/27/2014US20140054681 Method for manufacturing semiconductor device and semiconductor device
02/27/2014US20140054680 Method of forming group iii nitride semiconductor, method of fabricating semiconductor device, group iii nitride semiconductor device, method of performing thermal treatment
02/27/2014US20140054679 Doping a non-planar semiconductor device
02/27/2014US20140054678 N-type Field Effect Transistors, Arrays Comprising N-type Vertically-Oriented Transistors, Methods Of Forming An N-type Field Effect Transistor, And Methods Of Forming An Array Comprising Vertically-Oriented N-type Transistors
02/27/2014US20140054676 Vertical type semiconductor devices including oxidation target layers
02/27/2014US20140054675 Vertical type semiconductor devices and methods of manufacturing the same
02/27/2014US20140054674 Nonvolatile memory device and method for fabricating the same
02/27/2014US20140054673 Nonvolatile memory device and method for fabricating the same
02/27/2014US20140054672 Nonvolatile memory device and method of fabricating the same
02/27/2014US20140054671 Nonvolatile memory device and method of fabricating the same
02/27/2014US20140054668 Semiconductor memory device and method of fabricating the same
02/27/2014US20140054667 Split-Gate Memory Cell With Depletion-Mode Floating Gate Channel, And Method Of Making Same
02/27/2014US20140054666 Vertical memory cell string with dielectric in a portion of the body
02/27/2014US20140054665 Non-volatile memory device and method of manufacturing the same
02/27/2014US20140054660 Film formation method and nonvolatile memory device
02/27/2014US20140054659 Semiconductor devices and methods fabricating same
02/27/2014US20140054658 Semiconductor device and method for manufacturing the same
02/27/2014US20140054657 Semiconductor device and method of manufacturing same
02/27/2014US20140054656 Semiconductor structure and method for manufacturing the same
02/27/2014US20140054655 Semiconductor gate structure and method of fabricating thereof
02/27/2014US20140054654 Mos transistor and process thereof
02/27/2014US20140054653 Two-step shallow trench isolation (sti) process
02/27/2014US20140054652 Stimulated phonon emission device and oscillator, frequency filter, cooling device, light-receiving device, and light-emitting device comprising the stimulated phonon emission device
02/27/2014US20140054650 Method for Increasing Fin Density
02/27/2014US20140054649 Semiconductor devices and methods of forming the semiconductor devices including a retrograde well
02/27/2014US20140054648 Needle-shaped profile finfet device
02/27/2014US20140054647 High electron mobility bipolar transistor
02/27/2014US20140054646 Apparatus and Method for Multiple Gate Transistors
02/27/2014US20140054645 Insulated-gate bipolar transistor
02/27/2014US20140054644 Semiconductor device
02/27/2014US20140054641 Integrating a trench-gated thyristor with a trench-gated rectifier
02/27/2014US20140054612 Bipolar junction transistor in silicon carbide with improved breakdown voltage
02/27/2014US20140054611 Semiconductor device
02/27/2014US20140054610 Semiconductor device and method for growing semiconductor crystal
02/27/2014US20140054609 Large high-quality epitaxial wafers
02/27/2014US20140054608 Compound semiconductor integrated circuit
02/27/2014US20140054607 Group III-V Device with Strain-Relieving Layers
02/27/2014US20140054606 Semiconductor device including gate electrode provided over active region in p-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatus
02/27/2014US20140054605 Composite Substrates, Light Emitting Devices and a Method of Producing Composite Substrates
02/27/2014US20140054604 Semiconductor device having improved heat dissipation
02/27/2014US20140054603 Semiconductor Heterostructure Diodes
02/27/2014US20140054602 Field effect transistor (fet) having fingers with rippled edges
02/27/2014US20140054601 Gallium nitride (gan) device with leakage current-based over-voltage protection
02/27/2014US20140054600 Nitride semiconductor and fabricating method thereof
02/27/2014US20140054598 Semiconductor device and method for manufacturing semiconductor device
02/27/2014US20140054597 Power device and packaging thereof
02/27/2014US20140054595 Composite substrate of gallium nitride and metal oxide
02/27/2014US20140054594 Semiconductor light emitting device
02/27/2014US20140054593 Nitride semiconductor structure
02/27/2014US20140054591 Liquid crystal display including a variable width spacer element and method for fabricating the same
02/27/2014US20140054590 Thin-film semiconductor device and method for fabricating thin-film semiconductor device
02/27/2014US20140054589 Bismuth-doped semi-insulating group iii nitride wafer and its production method
02/27/2014US20140054588 Thin-film transistor structure, as well as thin-film transistor and display device each having said structure