Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2014
03/20/2014US20140077292 Semiconductor device and manufacturing method thereof
03/20/2014US20140077291 Semiconductor device
03/20/2014US20140077290 Trench metal oxide semiconductor field effect transistor with embedded schottky rectifier using reduced masks process
03/20/2014US20140077289 Semiconductor device having super junction structure and method for manufacturing the same
03/20/2014US20140077288 Semiconductor device and method of manufacturing the same
03/20/2014US20140077287 Breakdown voltage blocking device
03/20/2014US20140077286 Field-effect transistor
03/20/2014US20140077285 Non-volatile semiconductor memory device and method for manufacturing non-volatile semiconductor memory device
03/20/2014US20140077281 Semiconductor device and method of fabricating the same
03/20/2014US20140077280 Semiconductor device
03/20/2014US20140077279 Semiconductor device and manufacturing method therefor
03/20/2014US20140077278 Semiconductor device and manufacturing method of the same
03/20/2014US20140077277 Semiconductor device and manufacturing method thereof
03/20/2014US20140077276 Middle-of-line borderless contact structure and method of forming
03/20/2014US20140077275 Semiconductor Device and Method With Greater Epitaxial Growth on 110 Crystal Plane
03/20/2014US20140077274 Integrated circuits with improved gate uniformity and methods for fabricating same
03/20/2014US20140077273 Mechanical memory transistor
03/20/2014US20140077268 Distributed Heating Transistor Devices Providing Reduced Self-Heating
03/20/2014US20140077267 High electron mobility transistor and method of manufacturing the same
03/20/2014US20140077266 Heterostructure Transistor with Multiple Gate Dielectric Layers
03/20/2014US20140077265 Gateless Switch with Capacitively-Coupled Contacts
03/20/2014US20140077264 Semiconductor device and manufacturing method thereof
03/20/2014US20140077263 Semiconductor device and method for manufacturing same
03/20/2014US20140077262 Chip edge sealing
03/20/2014US20140077261 Power semiconductor device and method of manufacturing power semiconductor device
03/20/2014US20140077260 Semiconductor device
03/20/2014US20140077259 Semiconductor device
03/20/2014US20140077258 Semiconductor device
03/20/2014US20140077257 Semiconductor device
03/20/2014US20140077256 Semiconductor device
03/20/2014US20140077255 Semiconductor device
03/20/2014US20140077254 Semiconductor device and method of manufacturing same
03/20/2014US20140077253 Semiconductor device and method of manufacturing the same
03/20/2014US20140077232 Semiconductor device and method for manufacturing semiconductor device
03/20/2014US20140077231 Diamond sensors, detectors, and quantum devices
03/20/2014US20140077230 Device layout for reference and sensor circuits
03/20/2014US20140077229 Semiconductor structure
03/20/2014US20140077228 Junction barrier schottky diodes with current surge capability
03/20/2014US20140077227 Semiconductor Devices Including Polar Insulation Layer Capped By Non-Polar Insulation Layer
03/20/2014US20140077226 Silicon carbide semiconductor device
03/20/2014US20140077225 Schottky barrier diode and method of manufacturing the same
03/20/2014US20140077224 Pre-Cutting a Back Side of a Silicon Substrate for Growing Better III-V Group Compound Layer on a Front Side of the Substrate
03/20/2014US20140077222 Gallium Nitride Devices with Aluminum Nitride Alloy Intermediate Layer
03/20/2014US20140077218 Group 13 nitride crystal, group 13 nitride crystal substrate, and method of manufacturing group 13 nitride crystal
03/20/2014US20140077217 Semiconductor device
03/20/2014US20140077213 Thin Film Transistor, Array Substrate And Method For Manufacturing The Same, Display Device
03/20/2014US20140077208 Semiconductor device
03/20/2014US20140077206 Semiconductor device and semiconductor device manufacturing method
03/20/2014US20140077205 Semiconductor device and method for fabricating the same
03/20/2014US20140077204 Display device
03/20/2014US20140077193 Manufacturing method of electronic device using imprinting and electronic device made therefrom
03/20/2014US20140077173 Thin film transistor and organic light-emitting display apparatus
03/20/2014US20140077162 Doped graphene electronic materials
03/20/2014US20140077161 High performance graphene transistors and fabrication processes thereof
03/20/2014US20140077160 Tft array substrate and a method for manufacturing the same and display device
03/20/2014US20140077151 Optoelectric device with semiconductor microwires or nanowires and method for manufacturing the same
03/20/2014US20140077146 Semiconductor device including finfet device
03/20/2014DE112012002700T5 Verfahren und Struktur für niederohmige Source- und Drain-Bereiche in einem Prozessablauf mit Ersatz-Metall-Gate Method and structure for low impedance source and drain regions in a process flow with replacement metal gate
03/20/2014DE112012002648T5 Lokale Zwischenverbindung mit einem niedrigen Profil und Verfahren zum Herstellen derselben Local interconnect having a low profile and methods of making the same
03/20/2014DE102013217850A1 Siliziumcarbid-Halbleitervorrichtung Silicon carbide semiconductor device
03/20/2014DE102013217808A1 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation
03/20/2014DE102013216011A1 Halbleitervorrichtung Semiconductor device
03/20/2014DE102013207740A1 Halbleitervorrichtung Semiconductor device
03/20/2014DE102013109654A1 Feldeffekt-Halbleiterbauelement und Verfahren zu seiner Herstellung Field-effect semiconductor device and process for its preparation
03/20/2014DE102013015724A1 Chiprandversiegelung Chip edge seal
03/20/2014DE102012216493A1 Mikromechanische Sensorvorrichtung mit beweglichem Gate und entsprechendes Herstellungsverfahren Micromechanical sensor device with movable gate and method of manufacture
03/20/2014DE102012113027A1 Schottky-Diode und Verfahren zum Herstellen derselben Schottky diode and method of manufacturing the same
03/20/2014DE102008030854B4 MOS-Transistoren mit abgesenkten Drain- und Source-Bereichen und nicht-konformen Metallsilizidgebieten und Verfahren zum Herstellen der Transistoren MOS transistors with lowered drain and source regions and non-conformal metal silicide and method of manufacturing the transistors
03/20/2014DE102004006753B4 Leistungshalbleitervorrichtung Power semiconductor device
03/19/2014EP2709159A1 Fabricating method of thin film transistor, fabricating method of array substrate and display device
03/19/2014EP2709158A2 Method of making a thin film transistor device
03/19/2014EP2709157A2 Heterostructure transistor with multiple gate dielectric layers
03/19/2014EP2709156A2 Band engineered semiconductor device and method for manufacturing thereof
03/19/2014EP2709147A1 Poly -amino acid and ferroelectric memory element using same
03/19/2014EP2709092A1 Very high resolution amoled display
03/19/2014EP2707954A1 An apparatus and method for introducing a controllable delay to an input signal
03/19/2014EP2707903A1 Phase qubit cell having enhanced coherence
03/19/2014EP2707901A1 Apparatus for electrostatic discharge protection
03/19/2014EP2707900A1 Overvoltage and/or electrostatic discharge protection device
03/19/2014CN203491265U High-voltage glass-bead fast recovery diode
03/19/2014CN203491264U High-power glass-bead instantaneous-inhibition diode with high temperature resistance
03/19/2014CN203491263U Semiconductor device
03/19/2014CN203491262U Unidirectional high-voltage silicon controlled rectifier
03/19/2014CN203491256U A high-voltage silicon stack diode
03/19/2014CN103650167A Diode element and detecting device
03/19/2014CN103650150A Thin film transistor, display panel, and method for manufacturing thin film transistor
03/19/2014CN103650149A Display panel device and method for manufacturing same
03/19/2014CN103650148A Insulated gate bipolar transistor
03/19/2014CN103650147A Semiconductor device
03/19/2014CN103650146A Bulk finfet with uniform height and bottom isolation
03/19/2014CN103650145A Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases
03/19/2014CN103650141A Super-junction semiconductor device
03/19/2014CN103650120A Membrane structure and method for producing same
03/19/2014CN103646968A A HEMT gate leakage current separating structure and method based on capacitor structure
03/19/2014CN103646967A Groove type Schottky diode structure and preparation method thereof
03/19/2014CN103646966A Thin film transistor, array substrate, preparation method of array substrate and display apparatus
03/19/2014CN103646965A Junction field effect transistor (JFET) device and manufacturing method thereof
03/19/2014CN103646964A Double diffused metal oxide semiconductor device and manufacturing method thereof
03/19/2014CN103646963A Bipolar PNP transistor and manufacturing method thereof
03/19/2014CN103646962A Nonvolatile semiconductor memory device
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