Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2014
03/12/2014CN103635991A Electrical conductor
03/12/2014CN103635615A Sic single crystal, Sic wafer, and semiconductor device
03/12/2014CN103633228A Light emitting package and method for manufacturing light emitting package
03/12/2014CN103633151A Medium-and-high-pressure Schottky diode chip structure and manufacturing method thereof
03/12/2014CN103633150A Junction barrier schottky diodes with current surge capability
03/12/2014CN103633149A Current regulative diode and manufacturing method thereof
03/12/2014CN103633148A Semiconductor device
03/12/2014CN103633147A Thin film transistor and manufacturing method therefor
03/12/2014CN103633146A Thin-film transistor array substrate and display device including the same
03/12/2014CN103633145A Semiconductor devices and methods of fabricating the same
03/12/2014CN103633144A Semiconductor device and fabricating method thereof
03/12/2014CN103633143A Multi-fin finfet device including epitaxial growth barrier on outside surfaces of outermost fins and related methods
03/12/2014CN103633142A Semiconductor device
03/12/2014CN103633141A System and method for a vertical tunneling field-effect transistor cell
03/12/2014CN103633140A Two-step shallow trench isolation (STI) process
03/12/2014CN103633139A High-voltage metal oxide semiconductor transistor element
03/12/2014CN103633138A Semiconductor wafer of bottom isolation charge compensation structure and preparation method thereof
03/12/2014CN103633137A A semiconductor wafer with a bottom isolation charge compensation structure and a manufacturing method thereof
03/12/2014CN103633136A Ldmos device and manufacturing method thereof
03/12/2014CN103633135A Contact hole layout of groove type two-layered gate power MOS device
03/12/2014CN103633134A Thick-film high-resistance nitride semiconductor epitaxy structure and growing method thereof
03/12/2014CN103633133A Quantum well HEMT (high electron mobility transistor) device and producing method thereof and two-dimensional electron gas distribution method
03/12/2014CN103633132A Field effect transistor device and fabricating method thereof
03/12/2014CN103633131A Electronic device including shallow trench isolation (sti) regions with bottom nitride liner and upper oxide liner and related methods
03/12/2014CN103633130A Ultralow-capacitance solid discharging tube
03/12/2014CN103633129A IGBT capable of realizing localized service lifetime controlling and manufacturing method thereof
03/12/2014CN103633128A Bipolar NPN transistor and manufacturing method thereof
03/12/2014CN103633127A Semiconductor device and a method for fabricating the same
03/12/2014CN103633126A Semiconductor device and method for manufacturing the same
03/12/2014CN103633125A Electrode for power semiconductor device
03/12/2014CN103633124A Electrode used for power semiconductor device
03/12/2014CN103633123A Nanowire substrate structure and method for manufacturing same
03/12/2014CN103633122A Semiconductor structure and manufacture method thereof
03/12/2014CN103633121A Anti spacer process and semiconductor structure generated by the anti spacer process
03/12/2014CN103633120A Resistivity gradient distributed epitaxial wafer and production method thereof
03/12/2014CN103633119A Epitaxial wafer, production method thereof and super junction power device
03/12/2014CN103633118A Floating gate electricity erasable read-only memory and manufacturing method thereof
03/12/2014CN103633117A Trench MOSFET and manufacturing method thereof
03/12/2014CN103633116A Charge compensation structure semiconductor chip and preparation method thereof
03/12/2014CN103633115A Apparatus and method for multiple gate transistors
03/12/2014CN103633101A Array structure, manufacture method of array structure, array substrate and display device
03/12/2014CN103633099A Methods and devices for fabricating and assembling printable semiconductor elements
03/12/2014CN103633098A Display device and method for manufacturing the same
03/12/2014CN103633097A Multi-time programmable memory
03/12/2014CN103633090A High speed, low power consumption, isolated analog cmos unit
03/12/2014CN103633087A Strong anti-latch-up controllable LIGBT (Lateral Insulated Gate Bipolar Transistor) device with ESD (Electro-Static Discharge) protective function
03/12/2014CN103633086A Anti-latch-up SCR (Semiconductor Control Rectifier) with low trigger voltage for ESD (Electro-Static Discharge) protection
03/12/2014CN103633083A Layout structure forming ultrahigh voltage-withstanding resistor
03/12/2014CN103633068A Flexible crss adjustment in a sgt mosfet to smooth waveforms and to avoid emi in dc-dc application
03/12/2014CN103633032A Method of forming semiconductor device, method of forming transistor
03/12/2014CN103633028A Semiconductor device and fabrication method therof
03/12/2014CN103632977A Semiconductor structure and formation method
03/12/2014CN103632975A Pmos transistor and manufacturing method thereof
03/12/2014CN103632973A Semiconductor device and manufacture method thereof
03/12/2014CN103632972A Semiconductor structure and manufacture method thereof
03/12/2014CN103632970A Method for suppressing double-hump effect of NMOS device
03/12/2014CN103632969A Method of forming a transistor
03/12/2014CN103632968A Transistor and method of forming same
03/12/2014CN103632963A Method of preparing groove grid-control semiconductor power device
03/12/2014CN103632962A A manufacturing method for a DMOS pipe and an apparatus
03/12/2014CN103632959A Grooved Schottky device structure and manufacturing method thereof
03/12/2014CN103632951A Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer
03/12/2014CN103632948A Semiconductor device and manufacturing method thereof
03/12/2014CN103632937A Semiconductor device with an inclined source/drain and associated methods
03/12/2014CN103632922A A semiconductor structure and a manufacturing method thereof
03/12/2014CN103632921A Semiconductor device and manufacturing method thereof
03/12/2014CN102906804B Thin film transistor substrate and method for producing same
03/12/2014CN102834902B Etching method and device
03/12/2014CN102822981B Circuit board and display device
03/12/2014CN102593155B Multi-porous channel current equalizing-based transient voltage suppressor
03/12/2014CN102543729B Forming method of capacitor and capacitor structure thereof
03/12/2014CN102487018B MOS transistor and formation method thereof
03/12/2014CN102484138B Wiring layer, semiconductor device, liquid crystal display device
03/12/2014CN102456746B Nonvolatile semiconductor memory cell, device and preparation method thereof
03/12/2014CN102446954B Integrated circuit device and manufacturing method thereof
03/12/2014CN102446766B MOSFET (Metallic Oxide Semiconductor Field Effect Transistor) forming method
03/12/2014CN102446763B MOS (Metal Oxide Semiconductor) transistor and manufacturing method thereof
03/12/2014CN102446733B Power device with high-voltage radio-frequency lateral diffusion structure and production method of power device
03/12/2014CN102437057B Method for reducing semiconductor device hot carrier injection damage
03/12/2014CN102396056B Method for manufacturing semiconductor device
03/12/2014CN102376715B Capacitance-free dynamic random access memory structure and preparation method thereof
03/12/2014CN102365750B Switchable junction with intrinsic diode
03/12/2014CN102365274B Tetrathiafulvalene derivative, and organic film and organic transistor using same
03/12/2014CN102362336B Semiconductor substrate, semiconductor device, and method of producing semiconductor substrate
03/12/2014CN102349159B Thin film transistor
03/12/2014CN102265323B Display device
03/12/2014CN102237412B 图像显示装置及其制造方法 An image display device and manufacturing method
03/12/2014CN102203936B Semiconductor device and method for manufacturing same
03/12/2014CN102165579B 半导体器件 Semiconductor devices
03/12/2014CN102142392B Semiconductor device and manufacture method thereof
03/12/2014CN102138206B 半导体装置及其制造方法 Semiconductor device and manufacturing method
03/12/2014CN102110684B Semiconductor capacitor device
03/12/2014CN102097475B Semiconductor device and method for fabricating semiconductor device
03/12/2014CN101868856B Superjunction structures for power devices and methods of manufacture
03/12/2014CN101840931B High-voltage metal-dielectric-semiconductor device
03/12/2014CN101834203B Semiconductor device and method of manufacturing semiconductor device
03/12/2014CN101740630B Semiconductor device and manufacturing method thereof
03/12/2014CN101593758B Drive circuit, active matrix substrate, and liquid crystal display device
03/12/2014CN101516960B Polymer compound and polymer light-emitting device using same
03/11/2014US8670268 Magnetoresistive element and magnetic memory using the same
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