| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/13/2014 | US20140042405 Thin film transistor and organic light emitting diode display including the same |
| 02/13/2014 | US20140042395 Thin Film Transistor Substrate and Method for Manufacturing the Same and Organic Light Emitting Device Using the Same |
| 02/13/2014 | US20140042394 Organic Light-Emitting Display Apparatus and Method of Manufacturing Organic Light-Emitting Display Apparatus |
| 02/13/2014 | US20140042393 Graphene and Nanotube/Nanowire Transistor with a Self-Aligned Gate Structure on Transparent Substrates and Method of Making Same |
| 02/13/2014 | US20140042392 Double contacts for carbon nanotubes thin film devices |
| 02/13/2014 | US20140042391 Semiconductor device and method of manufactoring the same |
| 02/13/2014 | US20140042390 Interpenetrating networks of carbon nanostructures and nano-scale electroactive materials |
| 02/13/2014 | US20140042386 Nanowire structures having non-discrete source and drain regions |
| 02/13/2014 | US20140042385 Contacts-first self-aligned carbon nanotube transistor with gate-all-around |
| 02/13/2014 | DE19714703B4 Drucksensor Pressure sensor |
| 02/13/2014 | DE112012002077T5 Halbleitervorrichtung Semiconductor device |
| 02/13/2014 | DE112012001825T5 Graphen- oder Kohlenstoff-Nanoröhren-Einheiten mit lokalisierten unteren Gates und Gate-Dielektrikum Graphene or carbon nanotube units with localized lower gates and gate dielectric |
| 02/13/2014 | DE112012001587T5 Halbleitereinrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same |
| 02/13/2014 | DE112006001791B4 Non-Punch-Through Hochspannungs-IGBT für Schaltnetzteile und Verfahren zur Herstellung derselben Non-punch-through high voltage IGBT for switching power supplies and methods of making same |
| 02/13/2014 | DE10331096B4 Integrierte Halbleiteranordnung und Verfahren Integrated semiconductor device and method |
| 02/13/2014 | DE10229003B4 Ein Verfahren zur Herstellung eines SOI-Feldeffekttransistorelements mit einem Rekombinationsgebiet A method of manufacturing an SOI type field effect transistor element with a Rekombinationsgebiet |
| 02/13/2014 | DE102013215049A1 Infrarotsensor Infrared sensor |
| 02/13/2014 | DE102013108707A1 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation |
| 02/13/2014 | DE102013108698A1 III-Nitrid-Vorrichtung mit hoher Durchbruchspannung III-nitride device with a high breakdown voltage |
| 02/13/2014 | DE102013108614A1 Halbleitervorrichtung und Verfahren zum Herstellen derselben A semiconductor device and method of manufacturing the same |
| 02/13/2014 | DE102013108572A1 Polysiliziumdioden-Bandlückenreferenz Polysilicon diode bandgap reference |
| 02/13/2014 | DE102013108282A1 Kondensatoranordnungen und Verfahren zum Herstellen einer Kondensatoranordnung Capacitor assemblies and method of making a capacitor assembly |
| 02/13/2014 | DE102013105608B3 Integrated circuit (IC) structure for use in e.g. microprocessor, has continuous metallic portion that is formed between gate contact and metal |
| 02/13/2014 | DE102012217336B4 Verfahren zum Ersetzen von Halbleitermaterial durch Metall bei der Herstellung von Chips mit integrierten Schaltungen A method for replacing semiconductor material by metal in the manufacture of integrated circuit chips |
| 02/13/2014 | DE102012214056A1 High temperature change-fixed insertion diode e.g. trench junction barrier schottky diode, for use in motor vehicle-generator system, has isolating plastic layer overlapping radial inner-lying end area of another isolating plastic layer |
| 02/13/2014 | DE102012109986A1 Siliziumsubstrat und Verfahren zu dessen Herstellung Silicon substrate and process for its preparation |
| 02/13/2014 | DE102012015645A1 Reversible electrical energy storage device i.e. lithium-ion battery, for storing electrical energy for operating vehicle, has isolating narrow depletion zone formed in semiconducting volume that comprises wide band gap |
| 02/13/2014 | DE102009029692B4 Robustes Leistungshalbleiterbauelement Robust power semiconductor component |
| 02/13/2014 | DE102009005914B4 Halbleitervorrichtung mit Halbleiterelement mit isoliertem Gate und bipolarer Transistor mit isoliertem Gate A semiconductor device comprising insulated gate semiconductor element and a bipolar transistor with insulated gate |
| 02/13/2014 | DE102008052422B4 Halbleitervorrichtung mit reduzierter Kapazität A semiconductor device with a reduced capacity |
| 02/13/2014 | DE102004043233B4 Verfahren zum Herstellen eines beweglichen Abschnitts einer Halbleitervorrichtung A method of manufacturing a movable portion of a semiconductor device |
| 02/13/2014 | DE102004030056B4 Ausgeformte Halbleitervorrichtung Lofted semiconductor device |
| 02/12/2014 | EP2696370A1 Thin film transistor substrate and method of manufacturing the same |
| 02/12/2014 | EP2696369A1 Methods for manufacturing a field-effect semiconductor device |
| 02/12/2014 | EP2696368A1 Silicon carbide semiconductor device |
| 02/12/2014 | EP2696366A2 Device having reduced bias temperature instability (bti) |
| 02/12/2014 | EP2695197A1 Recessed termination structures and methods of fabricating electronic devices including recessed termination structures |
| 02/12/2014 | EP2695196A2 Memory cell |
| 02/12/2014 | EP2695195A2 Dual active layers for semiconductor devices and methods of manufacturing the same |
| 02/12/2014 | EP2695194A1 Process for catalyst-free selective growth on a semiconductor structure |
| 02/12/2014 | EP2695193A1 Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device |
| 02/12/2014 | CN203434162U Trench MOS barrier Schottky diode |
| 02/12/2014 | CN203434161U Small chamfering piece type diode |
| 02/12/2014 | CN203434160U Large-area silicon bypass diode for solar cell array |
| 02/12/2014 | CN103583084A Light-emitting element, transistor, and partition wall |
| 02/12/2014 | CN103583057A Semiconductor device and microphone |
| 02/12/2014 | CN103582953A 氧化物型半导体材料及溅镀靶 Oxide semiconductor material and a sputtering target |
| 02/12/2014 | CN103582952A Semiconductor device and display device |
| 02/12/2014 | CN103582951A GaN HEMT with a back gate connected to the source |
| 02/12/2014 | CN103582950A Semiconductor device and method of manufacturing same |
| 02/12/2014 | CN103582949A Modular array of fixed-coupling quantum systems for quantum information processing |
| 02/12/2014 | CN103582939A 氮化物半导体装置 The nitride semiconductor device |
| 02/12/2014 | CN103582938A Nitride electronic device and method for manufacturing nitride electronic device |
| 02/12/2014 | CN103582937A Semiconductor device manufacturing method, and semiconductor device |
| 02/12/2014 | CN103582936A Semiconductor device and method for producing semiconductor device |
| 02/12/2014 | CN103579375A SiC Schottky diode and manufacturing method thereof |
| 02/12/2014 | CN103579374A High intensity temperature change-resistant crimping diode |
| 02/12/2014 | CN103579373A Channel structure charge compensation Schottky semiconductor device and manufacturing method thereof |
| 02/12/2014 | CN103579372A Schottky potential barrier diode and manufacturing method thereof |
| 02/12/2014 | CN103579371A Channel terminal structure Schottky device and manufacturing method thereof |
| 02/12/2014 | CN103579370A Charge compensation semiconductor junction device with chemical matching mismatching insulating materials and manufacturing method thereof |
| 02/12/2014 | CN103579369A Schottky transient voltage restraint diode and preparation method thereof |
| 02/12/2014 | CN103579368A Groove schottky semiconductor device and preparation method thereof |
| 02/12/2014 | CN103579367A Fast recovery diode chip of low-concentration doped emitter region and manufacturing method thereof |
| 02/12/2014 | CN103579366A TVS device and manufacturing method |
| 02/12/2014 | CN103579365A Novel diode component structure |
| 02/12/2014 | CN103579364A Novel planar diode component structure |
| 02/12/2014 | CN103579363A Novel planar diode component structure |
| 02/12/2014 | CN103579362A 半导体装置及其制作方法 Semiconductor device and manufacturing method thereof |
| 02/12/2014 | CN103579361A Metal-oxide semiconductor thin film transistor and manufacturing method thereof |
| 02/12/2014 | CN103579360A Oxide semiconductor target and oxide semiconductor material and semiconductor device |
| 02/12/2014 | CN103579359A Semiconductor device and method for manufacturing the same |
| 02/12/2014 | CN103579358A Display panel, thin film transistor and method of fabricating the same |
| 02/12/2014 | CN103579357A Semiconductor structure |
| 02/12/2014 | CN103579356A Oxide TFT, manufacturing method of oxide TFT, display panel and display device |
| 02/12/2014 | CN103579355A Thin film transistor substrate, thin film transistor substrate manufacturing method and display including thin film transistor substrate |
| 02/12/2014 | CN103579354A Thin film transistor substrate and display device provided with thin film transistor substrate |
| 02/12/2014 | CN103579353A Semi-super-junction VDMOS (vertical double-diffused metal oxide semiconductor) provided with P type auxiliary buried layer |
| 02/12/2014 | CN103579352A Simulation circuit and method used for SOI (silicon on insulator) high-voltage PMOS (P-channel metal oxide semiconductor) device |
| 02/12/2014 | CN103579351A LDMOS (laterally diffused metal oxide semiconductor) device provided with super-junction buried layer |
| 02/12/2014 | CN103579350A Grapheme field-effect transistor and forming method thereof |
| 02/12/2014 | CN103579349A Transistor with improved grating structure |
| 02/12/2014 | CN103579348A Semiconductor device and manufactruing method of the same |
| 02/12/2014 | CN103579347A Semiconductor device and manufacturing method of semiconductor device |
| 02/12/2014 | CN103579346A Termination structure designed for high voltage balance metallic oxide field effect transistor and preparation method thereof |
| 02/12/2014 | CN103579345A High voltage field balance metal oxide field effect transistor (FBM) |
| 02/12/2014 | CN103579344A Low threshold voltage metal oxide semiconductor |
| 02/12/2014 | CN103579343A Super-junction trench mosfet and manufacturing method thereof |
| 02/12/2014 | CN103579342A Semiconductor device and fabrication method thereof |
| 02/12/2014 | CN103579341A Transistor and method for manufacturing same |
| 02/12/2014 | CN103579340A Gate electrode of field effect transistor |
| 02/12/2014 | CN103579339A 半导体器件 Semiconductor devices |
| 02/12/2014 | CN103579338A Semiconductor and manufacturing method thereof |
| 02/12/2014 | CN103579337A Semiconductor component and forming method thereof |
| 02/12/2014 | CN103579336A Floating charge compensation MOS semiconductor device and manufacturing method thereof |
| 02/12/2014 | CN103579335A Multi-grid field effect transistor and manufacturing technology thereof |
| 02/12/2014 | CN103579334A Semiconductor device and manufacturing method thereof |
| 02/12/2014 | CN103579333A MOS electrostatic protection device |
| 02/12/2014 | CN103579332A Heterojunction field-effect transistor and manufacturing method thereof |
| 02/12/2014 | CN103579331A Nitride-based semiconductor device and method of manufacturing same |