Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2014
02/25/2014US8659122 Semiconductor device and manufacturing method thereof
02/25/2014US8659120 Semiconductor device substrate and semiconductor device
02/25/2014US8659113 Embedded semiconductor die package and method of making the same using metal frame carrier
02/25/2014US8659110 Single-junction photovoltaic cell
02/25/2014US8659104 Field-effect magnetic sensor
02/25/2014US8659103 Magnetoresistive element and magnetic memory using the same
02/25/2014US8659102 Nonvolatile magnetic memory device
02/25/2014US8659101 Physical quantity detector
02/25/2014US8659099 Method for manufacturing a micromechanical structure, and micromechanical structure
02/25/2014US8659098 Resonator and fabrication method thereof
02/25/2014US8659097 Control fin heights in FinFET structures
02/25/2014US8659094 Array substrate for liquid crystal display device and method of fabricating the same
02/25/2014US8659091 Embedded stressors for multigate transistor devices
02/25/2014US8659090 Resistive memory and methods for forming the same
02/25/2014US8659089 Nitrogen passivation of source and drain recesses
02/25/2014US8659087 Electronic device with a gate electrode having at least two portions
02/25/2014US8659082 Method for manufacturing a semiconductor device having super junction structure
02/25/2014US8659081 Transistor with reduced channel length variation
02/25/2014US8659080 Semiconductor structure and manufacturing process thereof
02/25/2014US8659079 Transistor device and method for manufacturing the same
02/25/2014US8659078 Semiconductor device and method of manufacturing the same
02/25/2014US8659077 Multi-layer work function metal replacement gate
02/25/2014US8659076 Semiconductor device structures and related processes
02/25/2014US8659075 Cross-point diode arrays and methods of manufacturing cross-point diode arrays
02/25/2014US8659074 Semiconductor device
02/25/2014US8659073 Semiconductor device
02/25/2014US8659072 Series FinFET implementation schemes
02/25/2014US8659071 Method and structure to improve the erasing speed operation of SONOS memory device having a graded silicon nitride layer
02/25/2014US8659070 Semiconductor memory device and manufacturing method thereof
02/25/2014US8659069 Gate structures
02/25/2014US8659068 Dynamic memory structure
02/25/2014US8659067 EEPROM cell
02/25/2014US8659064 Semiconductor barrier layer constructions, and methods of forming semiconductor barrier layer constructions
02/25/2014US8659059 Strained transistor structure
02/25/2014US8659058 Methods of forming nickel sulphide film on a semiconductor device
02/25/2014US8659057 Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making
02/25/2014US8659056 Heterojunction field-effect transistor with source electrode and insulator formed in semiconductor layer opening
02/25/2014US8659055 Semiconductor device, field-effect transistor, and electronic device
02/25/2014US8659054 Method and structure for pFET junction profile with SiGe channel
02/25/2014US8659037 Nanostructure optoelectronic device with independently controllable junctions
02/25/2014US8659035 Light-emitting device, light-emitting device array, optical recording head, image forming apparatus, and method of manufacturing light-emitting device
02/25/2014US8659033 Light-emitting diode with textured substrate
02/25/2014US8659032 FinFET and method of fabricating the same
02/25/2014US8659031 Method of producing template for epitaxial growth and nitride semiconductor device
02/25/2014US8659030 III-nitride heterojunction devices having a multilayer spacer
02/25/2014US8659026 Flat panel display
02/25/2014US8659025 Semiconductor device and method of manufacturing same
02/25/2014US8659022 Hybrid silicon wafer
02/25/2014US8659021 Organic light-emitting display device and method of manufacturing the same
02/25/2014US8659020 Epitaxial silicon wafer and method for manufacturing same
02/25/2014US8659017 Array substrate and method of fabricating the same
02/25/2014US8659016 Thin film transistor, method of manufacturing the same and flat panel display device having the same
02/25/2014US8659015 Semiconductor device
02/25/2014US8659014 Method for manufacturing semiconductor device
02/25/2014US8659013 Semiconductor device
02/25/2014US8659011 Light-emitting element, light-emitting device, and manufacturing method of light-emitting element
02/25/2014US8659010 Photo luminescence diode and photoluminescence diplay having the same
02/25/2014US8659009 Locally gated graphene nanostructures and methods of making and using
02/25/2014US8659008 Composite material and light emitting element, light emitting device, and electronic device using the composite material
02/25/2014US8659007 Coherent quantum information transfer between conventional qubits
02/25/2014US8659006 Techniques for metal gate work function engineering to enable multiple threshold voltage nanowire FET devices
02/25/2014US8659005 Staggered composition quantum well method and device
02/25/2014US8659003 Disturb-resistant non-volatile memory device and method
02/25/2014US8659000 Amorphous semiiconductor layer memory device
02/25/2014US8658999 Semiconductor device
02/25/2014US8658994 Apparatus and method for controlled particle beam manufacturing
02/25/2014US8658539 Fin profile structure and method of making same
02/25/2014US8658533 Semiconductor interconnect structure with multi-layered seed layer providing enhanced reliability and minimizing electromigration
02/25/2014US8658495 Method of fabricating erasable programmable single-poly nonvolatile memory
02/25/2014US8658493 Manufacturing method of semiconductor device
02/25/2014US8658485 Semiconductor device and method of fabricating the same
02/25/2014US8658482 Compound semiconductor device and method for fabricating the same
02/25/2014US8658476 Low temperature P+ polycrystalline silicon material for non-volatile memory device
02/25/2014US8658475 Stacked body-contacted field effect transistor
02/25/2014US8658463 Memristor with embedded switching layer
02/25/2014US8656784 Flat covered leadless pressure sensor assemblies suitable for operation in extreme environments
02/20/2014WO2014028433A1 Mos transistors having reduced leakage well-substrate junctions
02/20/2014WO2014028268A2 Method of fabricating a gallium nitride merged p-i-n schottky (mps) diode by regrowth and etch back
02/20/2014WO2014028140A1 Method of making a three-dimensional memory array with etch stop
02/20/2014WO2014028123A1 Graphene-based non-volatile memory
02/20/2014WO2014027759A1 Nitride semiconductor diode
02/20/2014WO2014027750A1 Amorphous oxide semiconductor layer and thin film transistor containing same
02/20/2014WO2014027691A1 Semiconductor device and method for manufacturing same
02/20/2014WO2014027685A1 Organic semiconductor solution and organic semiconductor film
02/20/2014WO2014027662A1 Semiconductor device
02/20/2014WO2014027618A1 Thin film transistor
02/20/2014WO2014027600A1 Diamond semiconductor device and method for manufacturing same
02/20/2014WO2014027581A1 Heterocyclic compound and use thereof
02/20/2014WO2014027555A1 Spin polarization transistor element
02/20/2014WO2014027520A1 Silicon carbide semiconductor device
02/20/2014WO2014027519A1 Method for manufacturing silicon-carbide semiconductor device
02/20/2014WO2014027518A1 Silicon-carbide semiconductor device and manufacturing method therefor
02/20/2014WO2014027446A1 Thin film transistor and method of manufacturing the same, and display unit and electronic apparatus
02/20/2014WO2014027418A1 Electronic component, and method for producing electronic component
02/20/2014WO2014027380A1 Group iii nitride semiconductor element and method for manufacturing same
02/20/2014WO2014026342A1 Transistor based on electric double layer capacitor and use thereof
02/20/2014WO2014026308A1 Semiconductor device
02/20/2014WO2014026307A1 Semiconductor device and manufacturing method thereof
02/20/2014WO2014026306A1 Semiconductor device and manufacturing method thereof
02/20/2014WO2014026305A1 Semiconductor device and manufacturing method thereof