Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2014
03/06/2014US20140062524 Jfet having width defined by trench isolation
03/06/2014US20140061925 Low resistivity gate conductor
03/06/2014US20140061876 Method of manufacturing vertical pin diodes
03/06/2014US20140061875 Semiconductor device
03/06/2014US20140061872 Method for Reducing Thickness of Interfacial Layer, Method for Forming High Dielectric Constant Gate Insulating Film, High Dielectric Constant Gate Insulating Film, High Dielectric Constant Gate Oxide Film, and Transistor Having High Dielectric Constant Gate Oxide Film
03/06/2014US20140061870 Semiconductor device and fabrication method
03/06/2014US20140061869 Electronic element including dielectric stack
03/06/2014US20140061868 Method of manufacturing a semiconductor device and a semiconductor device
03/06/2014US20140061863 Method for producing a semiconductor layer
03/06/2014US20140061862 Semiconductor fin on local oxide
03/06/2014US20140061860 Compound semiconductor device and method of fabricating the same
03/06/2014US20140061858 Semiconductor Device with Diagonal Conduction Path
03/06/2014US20140061857 PARTIALLY-BLOCKED WELL IMPLANT TO IMPROVE DIODE IDEALITY WITH SiGe ANODE
03/06/2014US20140061855 Capacitor structure and fabricating method thereof
03/06/2014US20140061853 Plated lamination structures for integrated magnetic devices
03/06/2014US20140061848 Schottky Isolated NMOS for Latch-Up Prevention
03/06/2014US20140061847 Semiconductor device comprising a schottky barrier diode
03/06/2014US20140061846 Diode and method of manufacturing diode
03/06/2014US20140061827 Metal Protection Layer over SiN Encapsulation for Spin-Torque MRAM Device Applications
03/06/2014US20140061823 Membrane structure for electrochemical sensor
03/06/2014US20140061822 Substrate backside peeling control
03/06/2014US20140061821 Electronic device and semiconductor device
03/06/2014US20140061819 Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for cmos devices
03/06/2014US20140061816 Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
03/06/2014US20140061815 High performance non-planar semiconductor devices with metal filled inter-fin gaps
03/06/2014US20140061810 Semiconductor device and manufacturing method thereof
03/06/2014US20140061807 Semiconductor structures and fabrication method
03/06/2014US20140061804 Semiconductor device and method of manufacturing semiconductor device
03/06/2014US20140061802 Semiconductor device and method for manufacturing the same
03/06/2014US20140061800 Electrical isolation structures for ultra-thin semiconductor-on-insulator devices
03/06/2014US20140061799 Silicon-on-insulator transistor with self-aligned borderless source/drain contacts
03/06/2014US20140061795 Thin film transistor including improved semiconductor interface
03/06/2014US20140061793 Sublithographic width finfet employing solid phase epitaxy
03/06/2014US20140061792 Field effect transistor devices with recessed gates
03/06/2014US20140061791 Mos transistor
03/06/2014US20140061790 Split-gate lateral diffused metal oxide semiconductor device
03/06/2014US20140061789 Lateral superjunction extended drain mos transistor
03/06/2014US20140061788 Semiconductor device and method of fabricating the same
03/06/2014US20140061787 Semiconductor device
03/06/2014US20140061786 Double Diffused Metal Oxide Semiconductor Device and Manufacturing Method Thereof
03/06/2014US20140061785 Drain Extended CMOS with Counter-Doped Drain Extension
03/06/2014US20140061784 Semiconductor device having tungsten gate electrode and method for fabricating the same
03/06/2014US20140061783 Super-junction device and method of forming the same
03/06/2014US20140061781 Semiconductor device and method of fabricating the same
03/06/2014US20140061780 Semiconductor device including a gate dielectric layer
03/06/2014US20140061779 Semiconductor device comprising buried gate and method for fabricating the same
03/06/2014US20140061778 Semiconductor device having buried bit lines and method for fabricating the same
03/06/2014US20140061777 Semiconductor device
03/06/2014US20140061776 Semiconductor device and method of manufacturing the same
03/06/2014US20140061775 System and method for a field-effect transistor with a raised drain structure
03/06/2014US20140061773 Semiconductor memory device
03/06/2014US20140061772 Non-volatile memory devices having charge storage layers at intersecting locations of word lines and active region
03/06/2014US20140061771 Memory Device with Charge Trap
03/06/2014US20140061770 Nonvolatile memory device
03/06/2014US20140061769 Semiconductor device and manufacturing method of the same
03/06/2014US20140061768 Method for manufacturing nonvolatile semiconductor memory device and nonvolatile semiconductor memory device
03/06/2014US20140061767 Nonvolatile semiconductor memory device and method for manufacturing same
03/06/2014US20140061766 Nonvolatile semiconductor memory device
03/06/2014US20140061765 Semiconductor integrated circuit
03/06/2014US20140061764 Nonvolatile semiconductor memory device
03/06/2014US20140061763 Nonvolatile semiconductor memory device and method of manufacturing the same
03/06/2014US20140061762 Nonvolatile semiconductor memory device
03/06/2014US20140061761 Method for manufacturing semiconductor device and semiconductor device
03/06/2014US20140061760 Non-volatile memory device formed by dual floating gate deposit
03/06/2014US20140061759 Nonvolatile memory device and method for fabricating the same
03/06/2014US20140061758 Nonvolatile memory device and method of manufacturing the same
03/06/2014US20140061757 Semiconductor devices and methods of fabricating the same
03/06/2014US20140061756 Non-volatile semiconductor storage device
03/06/2014US20140061755 Nonvolatile memory device and method for fabricating the same
03/06/2014US20140061754 Semiconductor memory device and method for manufacturing the same
03/06/2014US20140061753 Semiconductor device
03/06/2014US20140061752 Method for manufacturing semiconductor device and semiconductor device
03/06/2014US20140061749 Transparent non-volatile memory devices and methods of manufacturing the same
03/06/2014US20140061748 Non-volatile memory device and method of manufacturing the same
03/06/2014US20140061747 Memory array having connections going through control gates
03/06/2014US20140061744 FinFET CIRCUIT
03/06/2014US20140061742 Semiconductor device
03/06/2014US20140061740 Electrostatic discharge protection device
03/06/2014US20140061735 Semiconductor device and method of manufacturing thereof
03/06/2014US20140061734 Finfet with reduced parasitic capacitance
03/06/2014US20140061733 Semiconductor Device with a Passivation Layer
03/06/2014US20140061732 Method and device to achieve self-stop and precise gate height
03/06/2014US20140061731 Tunable Schottky Diode
03/06/2014US20140061728 Gate Biasing Electrodes For FET Sensors
03/06/2014US20140061727 Integrated circuit structure having air-gap trench isolation and related design structure
03/06/2014US20140061726 Semiconductor device
03/06/2014US20140061725 High electron mobility transistor and method of manufacturing the same
03/06/2014US20140061724 High Electron Mobility Transistor and Manufacturing Method Thereof
03/06/2014US20140061723 Mos transistor
03/06/2014US20140061722 Transistors, Semiconductor Devices, and Methods of Manufacture Thereof
03/06/2014US20140061721 Mos device and method for fabricating the same
03/06/2014US20140061719 Mos type semiconductor device
03/06/2014US20140061718 Insulated gate bipolar transistor
03/06/2014US20140061717 Power semiconductor device and method of manufacturing the same
03/06/2014US20140061716 Esd protection device
03/06/2014US20140061715 Zener diode device and fabrication
03/06/2014US20140061693 Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer
03/06/2014US20140061675 Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device
03/06/2014US20140061674 SiC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
03/06/2014US20140061672 Semiconductor device
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