| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 02/12/2014 | CN103579330A Nitride-based semiconductor device and manufacturing method thereof |
| 02/12/2014 | CN103579329A High electron mobility transistors and methods of manufacturing the same |
| 02/12/2014 | CN103579328A 高电子迁移率晶体管及其制造方法 High electron mobility transistor and manufacturing method thereof |
| 02/12/2014 | CN103579327A High electron mobility transistor and method of forming the same |
| 02/12/2014 | CN103579326A Gallium-nitride-based high-electronic-mobility transistor with longitudinal composite buffer layer |
| 02/12/2014 | CN103579325A Semiconductor device including a trench in a semiconductor substrate and method of manufacturing a semiconductor device |
| 02/12/2014 | CN103579324A Three-face-source tunneling field effect transistor and manufacturing method thereof |
| 02/12/2014 | CN103579323A Wide cell insulated gate bipolar transistor |
| 02/12/2014 | CN103579322A IGBT device capable of improving switch-on and switch-off speed and switch-on and switch-off uniformity and manufacturing method thereof |
| 02/12/2014 | CN103579321A 半导体装置 Semiconductor device |
| 02/12/2014 | CN103579320A Groove type grid and manufacturing method |
| 02/12/2014 | CN103579319A Laminated structure, semiconductor device and manufacturing method thereof |
| 02/12/2014 | CN103579318A Multiple-grid transistor and manufacturing method thereof |
| 02/12/2014 | CN103579317A Gate structure and manufacturing method |
| 02/12/2014 | CN103579316A Semiconductor element, integrated circuit, manufacturing method of semiconductor element and integrated circuit and electronic device |
| 02/12/2014 | CN103579315A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/12/2014 | CN103579314A Semiconductor device and manufacturing method thereof |
| 02/12/2014 | CN103579313A Structure for improving breakdown voltages of high-voltage LDMOS device |
| 02/12/2014 | CN103579312A Device with self-aligned contact hole and silicide and manufacturing method thereof |
| 02/12/2014 | CN103579311A 半导体装置 Semiconductor device |
| 02/12/2014 | CN103579310A Transistors and methods of manufacturing the same |
| 02/12/2014 | CN103579309A Semiconductor device including a dielectric structure in a trench |
| 02/12/2014 | CN103579308A Mos晶体管器件及其制造方法 Mos transistor device and method of manufacturing |
| 02/12/2014 | CN103579307A Novel diode component structure |
| 02/12/2014 | CN103579306A Split gate type power MOS device |
| 02/12/2014 | CN103579305A Metal channel coupling capacitance removing structure and formation method thereof |
| 02/12/2014 | CN103579304A Semiconductor device including stress relief layer and method of manufacturing |
| 02/12/2014 | CN103579303A Semiconductor device and manufacturing method of same |
| 02/12/2014 | CN103579302A Semiconductor device and method for reduced bias temperature instability (bti) in silicon carbide devices |
| 02/12/2014 | CN103579301A Corner layout for high voltage semiconductor devices |
| 02/12/2014 | CN103579300A Semiconductor device and method for manufacturing same |
| 02/12/2014 | CN103579299A 高电子迁移率晶体管及其制造方法 High electron mobility transistor and manufacturing method thereof |
| 02/12/2014 | CN103579298A Field element of high-voltage semiconductor element |
| 02/12/2014 | CN103579297A High-voltage Schottky diode |
| 02/12/2014 | CN103579296A 半导体装置及其制造方法 Semiconductor device and manufacturing method |
| 02/12/2014 | CN103579295A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/12/2014 | CN103579285A Organic light-emitting display device and method of manufacturing the same |
| 02/12/2014 | CN103579254A Metal nano particle single layer |
| 02/12/2014 | CN103579253A Semiconductor memory device and method of manufacturing the same |
| 02/12/2014 | CN103579245A Static random access memory in hybrid orientation technology and method for improving write margin |
| 02/12/2014 | CN103579244A Static random access memory and method for improving writing-in redundancy rate of static random access memory |
| 02/12/2014 | CN103579243A Static random access memory in embedded germanium silicon process and write-in redundancy improving method |
| 02/12/2014 | CN103579236A Lateral semiconductor device and manufacturing method therefor |
| 02/12/2014 | CN103579235A A device with a vertical gate structure |
| 02/12/2014 | CN103579234A Semiconductor structure and manufacturing method thereof |
| 02/12/2014 | CN103579230A 半导体功率器件 Semiconductor power devices |
| 02/12/2014 | CN103579229A MOSFET integrating over-current protection and manufacturing method |
| 02/12/2014 | CN103579228A Hydrogen sensor chip based on two-dimensional electron gas |
| 02/12/2014 | CN103579223A Semiconductor device including a diode and method of manufacturing a semiconductor device |
| 02/12/2014 | CN103579220A Array substrate for display device and method of fabricating the same |
| 02/12/2014 | CN103579203A High-efficiency silicon controlled rectifier |
| 02/12/2014 | CN103579179A Capacitor arrangements and method for manufacturing a capacitor arrangement |
| 02/12/2014 | CN103579176A Contact structure of semiconductor device |
| 02/12/2014 | CN103579126A Semi-floating gate component of U-shaped structure and manufacturing method thereof |
| 02/12/2014 | CN103579123A Method for forming embedded memory device |
| 02/12/2014 | CN103579115A Complementary type thin film transistor, manufacturing method of complementary type thin film transistor, array substrate and display device |
| 02/12/2014 | CN103579077A Semi-conductor structure and forming method thereof |
| 02/12/2014 | CN103579006A Semiconductor device having vertical gates and fabrication thereof |
| 02/12/2014 | CN103579005A Power transistor with high voltage counter implant |
| 02/12/2014 | CN103579004A FinFET及其制造方法 And a method of manufacturing FinFET |
| 02/12/2014 | CN103579002A Fin type field effect transistor and forming method thereof |
| 02/12/2014 | CN103579001A Fin type field effect transistor and forming method thereof |
| 02/12/2014 | CN103578997A Manufacturing method of LDMOS grid electrode and product |
| 02/12/2014 | CN103578992A Integrated VDMOS chip and manufacturing method thereof |
| 02/12/2014 | CN103578989A MOS device, manufacturing method of MOS device and manufacturing method of CMOS devices |
| 02/12/2014 | CN103578988A Fin part and finned-type field-effect transistor and forming method thereof |
| 02/12/2014 | CN103578987A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/12/2014 | CN103578985A 半导体器件及其制作方法 Semiconductor device and manufacturing method thereof |
| 02/12/2014 | CN103578983A Field stop type insulated gate bipolar transistor and manufacturing method thereof |
| 02/12/2014 | CN103578982A Field stop type insulated gate bipolar transistor and manufacturing method thereof |
| 02/12/2014 | CN103578963A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/12/2014 | CN103578958A Semiconductor grid structure and forming method thereof |
| 02/12/2014 | CN103578955A Semiconductor and forming method thereof |
| 02/12/2014 | CN103578954A Semiconductor integrated circuit with metal gate |
| 02/12/2014 | CN103578941A Method of manufacturing semiconductor devices using ion implantation, and semiconductor devices |
| 02/12/2014 | CN103578933A Device having reduced bias temperature instability (BTI) |
| 02/12/2014 | CN103578927A Method of manufacturing a semiconductor device including grinding from a back surface and semiconductor device |
| 02/12/2014 | CN103578919A Method for forming passivation layer of MOS device and MOS device |
| 02/12/2014 | CN102709238B Array substrate and manufacturing method thereof |
| 02/12/2014 | CN102544084B Insulated gate bipolar translator (IGBT) device with two short-circuit positive electrodes |
| 02/12/2014 | CN102496624B Integrated floating basin isolation structure in high voltage BCD technology |
| 02/12/2014 | CN102386093B Bipolar transistor and method of manufacturing same |
| 02/12/2014 | CN102376761B LDMOS ESD(Laterally Diffused Metal Oxide Semiconductor Electro-Static Discharge) structure |
| 02/12/2014 | CN102365744B Image and light sensor chip packages |
| 02/12/2014 | CN102347277B Semiconductor device structure and manufacturing method thereof |
| 02/12/2014 | CN102347235B Strain semiconductor channel formation method and semiconductor device |
| 02/12/2014 | CN102332469B Longitudinally-conductive GaN (gallium nitride) normally-closed MISFET (metal integrated semiconductor field effect transistor) device and manufacturing method thereof |
| 02/12/2014 | CN102299156B Semiconductor device and manufacturing method thereof |
| 02/12/2014 | CN102157553B Structure of asymmetrical semi-conductor and forming method thereof |
| 02/12/2014 | CN101976684B Semiconductor device and its drive method |
| 02/12/2014 | CN101901835B High voltage low resistance MOSFET device and its manufacture method |
| 02/12/2014 | CN101826557B Thin film transistor, method of manufacturing same, and display device |
| 02/12/2014 | CN101577277B 半导体装置 Semiconductor device |
| 02/11/2014 | US8649834 Layered superconductor device and method |
| 02/11/2014 | US8648975 Liquid crystal display device with potential varying capacitance electrode |
| 02/11/2014 | US8648476 Dicing tape-integrated wafer back surface protective film |
| 02/11/2014 | US8648475 Low noise flip-chip packages and flip chips thereof |
| 02/11/2014 | US8648473 Chip arrangement and a method for forming a chip arrangement |
| 02/11/2014 | US8648472 Semiconductor device |
| 02/11/2014 | US8648463 Assembly of multi-chip modules with proximity connectors using reflowable features |