Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2014
03/26/2014CN103681327A Semiconductor structure and formation method thereof
03/26/2014CN103681322A Power semiconductor device and method of manufacturing the same
03/26/2014CN103681318A Method for manufacturing junction barrier schottky diode through selective oxidation of silicon
03/26/2014CN103681316A Deep-trench Schottky barrier diode and process method thereof
03/26/2014CN103681285A Semiconductor device including fluorine-free tungsten barrier layer and method for fabricating the same
03/26/2014CN103681280A Semiconductor device and formation method thereof
03/26/2014CN103681279A Semiconductor device and manufacturing method thereof
03/26/2014CN103681275A Semiconductor device with height-controllable fin and preparation method
03/26/2014CN103681271A Semiconductor device structure and production method thereof
03/26/2014CN103681256A A novel silicon carbide MOSFET device and a manufacturing method thereof
03/26/2014CN102947871B Semiconductor device and process for production thereof
03/26/2014CN102939658B Thin film transistor
03/26/2014CN102870221B Thin film transistor substrate, liquid crystal display device provided with same, and thin film transistor substrate production method
03/26/2014CN102623508B Graphene field effect transistor and preparation method thereof
03/26/2014CN102623497B Double diffused metal oxide semiconductor device and manufacturing method thereof
03/26/2014CN102593037B Semiconductor structure and making method thereof
03/26/2014CN102569193B Pixel structure and manufacturing method therefor
03/26/2014CN102544009B High-mobility complementary metal oxide semiconductor (CMOS) integrated unit
03/26/2014CN102496626B Silicon germanium heterojunction bipolar transistor structure
03/26/2014CN102437179B Layout structure of total dose radiation hardening submicron device
03/26/2014CN102349140B Method for fabricating semiconductor components using maskless back side alignment to conductive vias
03/26/2014CN102347359B Power metal oxide semiconductor field effect transistor (MOSFET) device and method for manufacturing same
03/26/2014CN102299178B Semiconductor structure and preparation method thereof
03/26/2014CN102280491B Mixed type thin film transistor, manufacturing method thereof and display panel
03/26/2014CN102280490B Switch assembly
03/26/2014CN102224578B Dielectric film, process for producing dielectric film, semiconductor device, and recording medium
03/26/2014CN102213856B LCD (liquid crystal display) panel
03/26/2014CN101983423B 半导体器件 Semiconductor devices
03/26/2014CN101887856B Semiconductor device and manufacturing method thereof
03/26/2014CN101840916B Integrated circuit having field effect transistors and manufacturing method
03/26/2014CN101685798B Integrated circuit and a method of making an integrated circuit to provide a gate contact over a diffusion region
03/26/2014CN101553915B Reduced leakage dram memory cells with vertically oriented nanorods and manufacturing methods thereof
03/26/2014CN101443265B Method for metal-free synthesis of epitaxial semiconductor nanowires on Si
03/26/2014CN101246909B Thin film transistor and method of forming the same
03/25/2014US8683414 Semiconductor integrated circuit device with independent power domains
03/25/2014US8681530 Nonvolatile memory device having a current limiting element
03/25/2014US8681411 Polariton mode optical switch with composite structure
03/25/2014US8680687 Electrical interconnect for die stacked in zig-zag configuration
03/25/2014US8680683 Wafer level package with embedded passive components and method of manufacturing
03/25/2014US8680679 Semiconductor device and method for manufacturing semiconductor device
03/25/2014US8680678 Formulations for improved electrodes for electronic devices
03/25/2014US8680677 Carbon nanotube-based conductive connections for integrated circuit devices
03/25/2014US8680676 Semiconductor package with under bump metallization routing
03/25/2014US8680655 Production process for a semi-conductor device and semi-conductor device
03/25/2014US8680654 Interconnect structures for stacked dies, including penetrating structures for through-silicon vias, and associated systems and methods
03/25/2014US8680651 Nanopillar decoupling capacitor
03/25/2014US8680650 Capacitor structures having improved area efficiency
03/25/2014US8680649 Multi-layer film capacitor with tapered film sidewalls
03/25/2014US8680646 Self-aligned carbon electronics with embedded gate electrode
03/25/2014US8680645 Semiconductor device and a method for forming a semiconductor device
03/25/2014US8680643 Junction barrier Schottky (JBS) with floating islands
03/25/2014US8680632 Magnetoresistive element and magnetic memory
03/25/2014US8680631 High aspect ratio capacitively coupled MEMS devices
03/25/2014US8680624 Methods for forming barrier regions within regions of insulating material resulting in outgassing paths from the insulating material and related devices
03/25/2014US8680621 Integrated circuit, electronic device and ESD protection therefor
03/25/2014US8680618 Structure and method for integrating front end SiCr resistors in HiK metal gate technologies
03/25/2014US8680615 Customized shield plate for a field effect transistor
03/25/2014US8680614 Split trench-gate MOSFET with integrated Schottky diode
03/25/2014US8680613 Termination design for high voltage device
03/25/2014US8680612 Semiconductor device and manufacturing method thereof
03/25/2014US8680611 Field effect transistor and schottky diode structures
03/25/2014US8680610 Trench MOSFET having floating dummy cells for avalanche improvement
03/25/2014US8680609 Depletion mode semiconductor device with trench gate and manufacturing method thereof
03/25/2014US8680608 Power semiconductor device with a low on resistence
03/25/2014US8680607 Trench gated power device with multiple trench width and its fabrication process
03/25/2014US8680606 Power semiconductor device
03/25/2014US8680605 Stacked memory devices and method of manufacturing the same
03/25/2014US8680604 Nonvolatile semiconductor memory device and method of manufacturing the same
03/25/2014US8680603 Transistor comprising nanocrystals and related devices
03/25/2014US8680602 Semiconductor device and method of manufacturing the same
03/25/2014US8680601 Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region
03/25/2014US8680598 Trench structure and method of forming the trench structure
03/25/2014US8680597 Method and apparatus for improving gate contact
03/25/2014US8680596 Semiconductor device and method for manufacturing the same
03/25/2014US8680593 Semiconductor device and method of fabricating the same
03/25/2014US8680592 Method of forming a magnetic tunnel junction device
03/25/2014US8680588 Field effect transistor with buried gate pattern
03/25/2014US8680587 Schottky diode
03/25/2014US8680586 Semiconductor light emitting device including GaAs substrate and method for manufacturing the same
03/25/2014US8680581 Method for producing group III nitride semiconductor and template substrate
03/25/2014US8680580 Field effect transistor and process for manufacturing same
03/25/2014US8680579 Individually controlled multiple III-nitride half bridges
03/25/2014US8680578 Field effect transistor with enhanced insulator structure
03/25/2014US8680577 Recessed gate field effect transistor
03/25/2014US8680576 CMOS device and method of forming the same
03/25/2014US8680573 Diode-triggered silicon controlled rectifier with an integrated diode
03/25/2014US8680571 Gallium nitride based light emitting diode
03/25/2014US8680558 Light-emitting dies incorporating wavelength-conversion materials and related methods
03/25/2014US8680543 Light Emitting Element Having a Capping Layer on an Electrode, Light Emitting Device Having the Same and Method for Manufacturing the Same
03/25/2014US8680541 LED structure and the LED package thereof
03/25/2014US8680540 Optical semiconductor apparatus having a bidirectional communication system employing a single-core optical fiber
03/25/2014US8680538 Silicon carbide semiconductor device
03/25/2014US8680536 Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices
03/25/2014US8680535 High electron mobility transistor structure with improved breakdown voltage performance
03/25/2014US8680532 Method of fabricating a semiconductor device
03/25/2014US8680528 Light-emitting device
03/25/2014US8680527 Photomask and thin-film transistor fabricated using the photomask
03/25/2014US8680526 Electronic device, method of producing the same, and display device
03/25/2014US8680525 Thin film transistor and manufacturing method thereof
03/25/2014US8680524 Method of arranging pads in semiconductor device, semiconductor memory device using the method, and processing system having mounted therein the semiconductor memory device
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