Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2014
03/13/2014US20140070324 Semiconductor device with contact hole and manufacturing method thereof
03/13/2014US20140070320 Integrated circuits with selective gate electrode recess
03/13/2014US20140070317 Method for manufacturing a suspended membrane and dual-gate mos transistor
03/13/2014US20140070316 Replacement source/drain for 3d cmos transistors
03/13/2014US20140070315 Double-Resurf LDMOS With Drift And PSURF Implants Self-Aligned To A Stacked Gate "BUMP" Structure
03/13/2014US20140070313 Power mosfet current sense structure and method
03/13/2014US20140070312 Semiconductor device and related fabrication methods
03/13/2014US20140070311 Semiconductor device and related fabrication methods
03/13/2014US20140070310 Integration of trench mos with low voltage integrated circuits
03/13/2014US20140070308 Semiconductor device
03/13/2014US20140070307 Multi-layer work function metal replacement gate
03/13/2014US20140070306 Vertical memory devices and apparatuses
03/13/2014US20140070305 Non-volatile memory device and method for manufacturing same
03/13/2014US20140070304 Nonvolatile memory device and method for manufacturing same
03/13/2014US20140070303 Semiconductor storage device and manufacturing method thereof
03/13/2014US20140070302 Three-dimensional semiconductor memory device and method for fabricating the same
03/13/2014US20140070301 Semiconductor storage device and manufacturing method thereof
03/13/2014US20140070300 Vertical memory devices and methods of manufacturing the same
03/13/2014US20140070299 Sonos device and method for fabricating the same
03/13/2014US20140070298 Semiconductor device and method for producing the same
03/13/2014US20140070291 Semiconductor devices including a gate structure between active regions, and methods of forming semiconductor devices including a gate structure between active regions
03/13/2014US20140070287 Semiconductor device and method of manufacturing same
03/13/2014US20140070286 Nano-pillar transistor fabrication and use
03/13/2014US20140070285 Methods of forming semiconductor devices with self-aligned contacts and the resulting devices
03/13/2014US20140070284 Self-aligned carbon nanostructure field effect transistors using selective dielectric deposition
03/13/2014US20140070283 Field effect transistor and method of fabrication
03/13/2014US20140070282 Self-aligned contacts
03/13/2014US20140070281 High voltage junction field effect transistor and manufacturing method thereof
03/13/2014US20140070280 Active Area Shaping of III-Nitride Devices Utilizing Steps of Source-Side and Drain-Side Field Plates
03/13/2014US20140070279 Active Area Shaping of III-Nitride Devices Utilizing a Source-Side Field Plate and a Wider Drain-Side Field Plate
03/13/2014US20140070278 Active Area Shaping of III-Nitride Devices Utilizing Multiple Dielectric Materials
03/13/2014US20140070277 Epitaxial growth of smooth and highly strained germanium
03/13/2014US20140070276 Source/Drain Re-Growth for Manufacturing III-V Based Transistors
03/13/2014US20140070275 Semiconductor device
03/13/2014US20140070274 Post-gate shallow trench isolation structure formation
03/13/2014US20140070273 Non-Planar Device Having Uniaxially Strained Semiconductor Body and Method of Making Same
03/13/2014US20140070271 Lateral insulated gate bipolar transistor
03/13/2014US20140070270 Semiconductor device and semiconductor device manufacturing method
03/13/2014US20140070268 Semiconductor device and semiconductor device manufacturing method
03/13/2014US20140070267 Power semiconductor device and fabrication method thereof
03/13/2014US20140070266 Power semiconductor device
03/13/2014US20140070265 Fast switching igbt with embedded emitter shorting contacts and method for making same
03/13/2014US20140070234 High voltage power semiconductor devices on sic
03/13/2014US20140070233 Silicon carbide semiconductor device
03/13/2014US20140070232 Method for Manufacturing a Composite Wafer Having a Graphite Core, and Composite Wafer Having a Graphite Core
03/13/2014US20140070231 Semiconductor device and method for making the same
03/13/2014US20140070230 Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device
03/13/2014US20140070229 Systems and methods for terminating junctions in wide bandgap semiconductor devices
03/13/2014US20140070228 Semiconductor devices having a recessed electrode structure
03/13/2014US20140070226 Bondable top metal contacts for gallium nitride power devices
03/13/2014US20140070225 Hydrogenation and Crystallization of Polycrystalline Silicon
03/13/2014US20140070224 Display device and electronic appliance
03/13/2014US20140070223 Planarized semiconductor particles positioned on a substrate
03/13/2014US20140070222 Thin-film transistor and solid-state imaging apparatus
03/13/2014US20140070221 Array Substrate And Manufacturing Method Thereof And Display Device
03/13/2014US20140070220 Array substrate, method for manufacturing the same and display device
03/13/2014US20140070217 Thin film transistor and manufacturing method thereof, and array substrate
03/13/2014US20140070216 Thin film transistor
03/13/2014US20140070215 Defect free strained silicon on insulator (ssoi) substrates
03/13/2014US20140070211 Field-effect transistor
03/13/2014US20140070210 Oxide thin film transistor and method of fabricating the same
03/13/2014US20140070207 Electrode for oxide semiconductor, method of forming the same, and oxide semiconductor device provided with the electrode
03/13/2014US20140070206 Array Substrate, Method For Manufacturing The Same And Display Device
03/13/2014US20140070168 Electronic component, methods for manufacturing the same and use of graphene in an electronic component
03/13/2014US20140070167 Solid State Cloaking for Electrical Charge Carrier Mobility Control
03/13/2014DE112012002231T5 Transistoreinheiten mit magnetischem Tunnelübergang Transistor units with a magnetic tunnel junction
03/13/2014DE112012002136T5 Halbleitervorrichtung Semiconductor device
03/13/2014DE112012001735T5 Modulare Anordnung von Quantensystemen mit fester Kopplung zur Quanteninformationsverarbeitung Modular assembly of quantum systems with fixed coupling to quantum information processing
03/13/2014DE112011105319T5 Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung A semiconductor device and method of manufacturing a semiconductor device
03/13/2014DE112011103351B4 Verfahren zur Herstellung von Halbleitervorrichtungen mit metallischen Ersatz-Gates A process for the production of semiconductor devices with metal replacement gate
03/13/2014DE10339920B4 Verfahren zum Herstellen eines integrierten Schaltungs-Feldeffekttransistors A method of fabricating an integrated circuit field effect transistor
03/13/2014DE10226908B4 Isolierschicht-Bipolartransistor Insulated Gate Bipolar Transistor
03/13/2014DE102013215671A1 Mehrfach programmierbarer Speicher Multiple programmable memory
03/13/2014DE102013108946A1 Halbleitervorrichtung, integrierte Schaltung und Herstellungsverfahren hierfür A semiconductor device, integrated circuit, and manufacturing method thereof
03/13/2014DE102013108585A1 Halbleitervorrichtung mit einer entspannungsschicht und herstellungsverfahren Semiconductor device having a relaxation layer and manufacturing processes
03/13/2014DE102010038641B4 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
03/13/2014DE102004008148B4 Sensor mit Membran und Verfahren zur Herstellung des Sensors Sensor with membrane and method of manufacturing the sensor
03/13/2014DE10196677B4 Elektrodenstruktur und Verfahren zum Herstellen eines Dünnschicht-Strukturkörpers Electrode structure and method of manufacturing a thin-film structure body
03/12/2014EP2706576A2 Diode and power conversion system
03/12/2014EP2706575A1 Thin film transistor and method of manufacturing the same
03/12/2014EP2706574A2 Semiconductor device
03/12/2014EP2706573A1 Method of forming low-resistance wire and method of manufaturing thin film transistor using the same
03/12/2014EP2706566A1 Semiconductor device and method of manufacturing same
03/12/2014EP2705537A1 Vertical tunneling negative differential resistance devices
03/12/2014EP2705527A1 Field effect transistor devices with low source resistance
03/12/2014EP2705007A1 Active electronics on strengthened glass with alkali barrier
03/12/2014CN203481244U Transverse high-pressure semiconductor device and multi-step field plate thereof
03/12/2014CN203481243U N-type LDMOS with step gate oxide layer active drift region structure
03/12/2014CN203481242U A multi-fin fin-type field effect transistor device
03/12/2014CN203481241U High-low-junction-based majority-carrier conductivity-modulated power MOSFET device
03/12/2014CN203481240U Semiconductor device
03/12/2014CN203481239U Transistor with slight change in resistance
03/12/2014CN203481238U Transistor less susceptible to temperature
03/12/2014CN203481237U Fully self-aligned insulated gate bipolar transistor device provided with field stop layer
03/12/2014CN203481236U Fully self-aligned insulated gate bipolar transistor
03/12/2014CN203481235U Insulated gate bipolar transistor
03/12/2014CN203481234U Insulated gate bipolar transistor
03/12/2014CN203481226U Large power crimping type IGBT device
03/12/2014CN103636002A Device active channel length/width greater than channel length/width
03/12/2014CN103636001A Gold-free ohmic contacts
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