Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2014
03/27/2014US20140084287 Semiconductor device
03/27/2014US20140084285 Method for Manufacturing Thin-Film Transistor Active Device and Thin-Film Transistor Active Device Manufactured with Same
03/27/2014US20140084284 Thin film transistor and display device
03/27/2014US20140084283 Thin film transistor and method for manufacturing the same
03/27/2014US20140084282 Thin film transistor, array substrate and display device
03/27/2014US20140084281 Thin film transistor, array substrate, and display apparatus
03/27/2014US20140084272 Surface planarisation
03/27/2014US20140084268 Method of forming polysilicon film, thin film transistor and display device including polysilicon film
03/27/2014US20140084250 Semiconductor device
03/27/2014US20140084249 Stacked nanowire field effect transistor
03/27/2014US20140084247 Threshold adjustment for quantum dot array devices with metal source and drain
03/27/2014US20140084246 Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer
03/27/2014US20140084245 Quantum dot array devices with metal source and drain
03/27/2014US20140084239 Non-planar semiconductor device having channel region with low band-gap cladding layer
03/27/2014US20140084234 Post manufacturing strain manipulation in semiconductor devices
03/27/2014DE112012001618T5 Gestapelter Halbleiterkörper, Verfahren zum Herstellen desselben und Halbleiterelement Of the same stacked semiconductor body, method for manufacturing the semiconductor element and
03/27/2014DE112011105316T5 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
03/27/2014DE112009004375B4 Halbleitervorrichtung Semiconductor device
03/27/2014DE112005002397B4 Nicht-planare Halbleitereinrichtung mit verjüngtem unteren Körperabschnitt und Verfahren zur Herstellung Non-planar semiconductor device having a tapered lower body portion and methods for preparing
03/27/2014DE102013218959A1 Transistorbauelement mit Feldelektrode Transistor device with field electrode
03/27/2014DE102013110180A1 Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung A semiconductor device and method of manufacturing a semiconductor device
03/27/2014DE102013109834A1 Bidirektionale Heteroübergangshalbleiterschutzvorrichtungen und Verfahren zur Bildung derselben Bidirectional heterojunction semiconductor protection devices and methods of forming the same
03/27/2014DE102013109831A1 Schutzbegrenzer für Heteroübergangsverbindungshalbleiter und Verfahren zu deren Herstellung Schutzbegrenzer for hetero-junction compound semiconductor and process for their preparation
03/27/2014DE102012217631A1 Optoelektronisches Bauelement mit einer Schichtstruktur Optoelectronic component with a layer structure
03/27/2014DE102012217154A1 Halbleitervorrichtung und Herstellungsverfahren für eine Halbleitervorrichtung A semiconductor device and manufacturing method of a semiconductor device
03/27/2014DE102012217133A1 Mikroelektronisches Bauelement und entsprechendes Herstellungsverfahren Microelectronic component and corresponding production method
03/27/2014DE102012217073A1 Vertikales mikroelektronisches Bauelement und entsprechendes Herstellungsverfahren Vertical microelectronic component and corresponding production method
03/27/2014DE102011088717B4 FINFET mit erhöhter Effizienz und Herstellverfahren FinFET with increased efficiency and manufacturing
03/27/2014DE102004010356B4 Tiefpassfilter mit geschaltetem Kondensator und Halbleiter-Drucksensorvorrichtung mit diesem Filter Low pass filter with switched-capacitor and semiconductor pressure sensor apparatus with this filter
03/26/2014EP2712085A1 Switching circuit and semiconductor module
03/26/2014EP2711987A1 Semiconductor device
03/26/2014EP2711986A1 Semiconductor device and method for manufacturing semiconductor device
03/26/2014EP2711975A1 Semiconductor element and method for producing same
03/26/2014EP2711973A1 Al ALLOY FILM FOR SEMICONDUCTOR DEVICES
03/26/2014EP2710733A1 Charge-sensitive amplifier
03/26/2014EP2710637A1 Device active channel length/width greater than channel length/width
03/26/2014EP2710636A2 Gan hemts with a back gate connected to the source
03/26/2014EP2710635A1 Sic devices with high blocking voltage terminated by a negative bevel
03/26/2014EP2710634A2 In-series electrical connection of light-emitting nanowires
03/26/2014EP2710629A1 Process for producing semiconductor device and semiconductor device
03/26/2014CN203503664U Groove mode based channel voltage division field effect transistor
03/26/2014CN203503663U High-reverse-voltage pass-through GPP rectification chip
03/26/2014CN203503661U Flexible display substrate and flexible display device
03/26/2014CN203498071U Modulating switch for ion beam and electron beam
03/26/2014CN103688556A A component having a micromechanical microphone structure
03/26/2014CN103688364A Method for producing field effect transistor, field effect transistor, display device, image sensor, and x-ray sensor
03/26/2014CN103688363A Semiconductor device
03/26/2014CN103688362A Tunnel field-effect transistor
03/26/2014CN103688346A Method for manufacturing semiconductor device
03/26/2014CN103688342A Method for manufacturing silicon carbide semiconductor device
03/26/2014CN103682009A Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer
03/26/2014CN103682008A Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer
03/26/2014CN103682007A Pre-cutting a back side of a silicon substrate for growing better III-V group compound layer on a front side of the substrate
03/26/2014CN103681885A Schottky diode chip, Schottky diode device and manufacturing method for Schottky diode chip-composite barrier
03/26/2014CN103681884A Semiconductor device and method for manufacturing same
03/26/2014CN103681883A Schottky barrier diode and method of manufacturing the same
03/26/2014CN103681882A Power semiconductor device
03/26/2014CN103681881A High-reliability stackable and high-speed SOI diode
03/26/2014CN103681880A P+NP+N+ type silicon gate flow protection diode and preparation method thereof
03/26/2014CN103681879A Diode and method of manufacturing diode
03/26/2014CN103681878A Diode and power conversion system
03/26/2014CN103681877A Structure of fast recovery diode and manufacturing method thereof
03/26/2014CN103681876A High voltage junction field effect transistor
03/26/2014CN103681875A Switchover thin-film transistor with repair function
03/26/2014CN103681874A Display device and electronic appliance
03/26/2014CN103681873A Thin film transistor
03/26/2014CN103681872A Thin film transistor and display device
03/26/2014CN103681871A Thin film transistor, array substrate, and display apparatus
03/26/2014CN103681870A Array substrate and manufacturing method thereof
03/26/2014CN103681869A Thin film transistor substrate, manufacturing method for thin film transistor substrate, and display
03/26/2014CN103681868A GeSn n-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with source-drain strain source
03/26/2014CN103681867A Transistor device with field electrode
03/26/2014CN103681866A Field-effect semiconductor device and manufacturing method therefor
03/26/2014CN103681865A Field effect transistors including asymmetrical silicide structures and related devices
03/26/2014CN103681864A Semiconductor device and method for manufacturing a semiconductor device
03/26/2014CN103681863A Semiconductor device and method of fabricating the same
03/26/2014CN103681862A Semiconductor device and method of manufacturing same
03/26/2014CN103681861A Semiconductor element and making method thereof
03/26/2014CN103681860A Semiconductor device and method of manufacturing semiconductor device
03/26/2014CN103681859A A silicon carbide semiconductor device and a manufacturing method thereof
03/26/2014CN103681858A Semiconductor device
03/26/2014CN103681857A Field-effect transistor
03/26/2014CN103681856A Junctionless semiconductor device, method for manufacturing the semiconductor device, and apparatus including the same
03/26/2014CN103681855A Semiconductor device
03/26/2014CN103681854A Semiconductor device and method for manufacturing the same
03/26/2014CN103681853A Semiconductor device and manufacturing method of the same
03/26/2014CN103681852A Power semiconductor device
03/26/2014CN103681851A Power semiconductor device
03/26/2014CN103681850A Power mosfet and forming method thereof
03/26/2014CN103681849A System and method for field-effect transistor with raised drain structure
03/26/2014CN103681848A Metal oxide semiconductor field transistor and method of fabricating the same
03/26/2014CN103681847A Semicircular window-shaped fin-type field-effect transistor and manufacturing method thereof
03/26/2014CN103681846A Semiconductor device and manufacturing method thereof
03/26/2014CN103681845A Semiconductor device and manufacturing method thereof
03/26/2014CN103681844A Semiconductor device and manufacturing method thereof
03/26/2014CN103681843A Planar VDMOS (Vertical Double-Diffusion Metal-Oxide-Semiconductor) transistor and preparation method thereof
03/26/2014CN103681842A VDMOS (Vertical Double-Diffused Metal Oxide Semiconductor) tube and method for manufacturing VDMOS tube
03/26/2014CN103681841A Terminal protection structure of super junction device
03/26/2014CN103681840A Semiconductor device and manufacture method thereof
03/26/2014CN103681839A NLDMOS (N-type laterally diffused metal oxide semiconductor) device and manufacture method
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