Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2014
03/27/2014WO2014045543A1 Thin film transistor, method for manufacturing same, and image display apparatus
03/27/2014WO2014045480A1 Semiconductor device and semiconductor device manufacturing method
03/27/2014WO2014045274A1 Bilayer graphene diode
03/27/2014WO2014045090A1 Methods of forming iii-v semiconductor structures using multiple substrates, and semiconductor devices fabricated using such methods
03/27/2014WO2014044929A1 Process for producing a double-gate field-effect device having independent gates
03/27/2014WO2014044748A1 Nmos transistor and method for producing it
03/27/2014WO2014043947A1 Semiconductor device and manufacturing method therefor
03/27/2014WO2014007892A3 Nano-pillar transistor fabrication and use
03/27/2014US20140087550 Methods of making semiconductor devices with low leakage schotky contacts
03/27/2014US20140087539 Process for manufactuirng super-barrier rectifiers
03/27/2014US20140087538 Method for manufacturing semiconductor device
03/27/2014US20140087537 Semiconductor devices including multilayer source/drain stressors and methods of manufacturing the same
03/27/2014US20140087536 Semiconductor structure that reduces the effects of gate cross diffusion and method of forming the structure
03/27/2014US20140087535 Semiconductor devices and methods of forming the same
03/27/2014US20140087534 Methods of manufacturing vertical structure nonvolatile memory devices
03/27/2014US20140087533 Methods of forming transistors and methods of manufacturing semiconductor devices including the transistors
03/27/2014US20140087531 Two Step Poly Etch LDMOS Gate Formation
03/27/2014US20140087530 Field Controlled Diode With Positively Biased Gate
03/27/2014US20140087529 Power device and method for manufacturing the same
03/27/2014US20140087528 Printed Material Constrained By Well Structures And Devices Including Same
03/27/2014US20140087527 Method of forming thin film poly silicon layer and method of forming thin film transistor
03/27/2014US20140087525 Complementary metal oxide semiconductor transistor and fabricating method thereof
03/27/2014US20140087524 Method for producing a field effect transistor with implantation through the spacers
03/27/2014US20140087517 Semiconductor device
03/27/2014US20140087516 Semiconductor device and method for manufacturing the same
03/27/2014US20140087113 Method of growing group iii nitride crystals
03/27/2014US20140085984 Two-Transistor Non-Volatile Memory Cell and Related Program and Read Methods
03/27/2014US20140084969 Method for setting transistor operating point and circuit therefor, method for changing signal component value and active-matrix liquid crystal display device
03/27/2014US20140084423 Protective member and wafer processing method
03/27/2014US20140084421 Adhesion Promoter Apparatus and Method
03/27/2014US20140084420 Method to bridge extrinsic and intrinsic base by selective epitaxy in bicmos technology
03/27/2014US20140084414 Vertical meander inductor for small core voltage regulators
03/27/2014US20140084411 Semiconductor-on-insulator (soi) deep trench capacitor
03/27/2014US20140084399 Spin transfer torque memory (sttm) device with topographically smooth electrode and method to form same
03/27/2014US20140084398 Perpendicular mtj stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
03/27/2014US20140084392 Semiconductor device and method of manufacturing the same
03/27/2014US20140084390 Chemical sensor
03/27/2014US20140084389 Method of Manufacturing Semiconductor Device, Substrate Processing Method and Apparatus, Non-Transitory Computer Readable Recording Medium, and Semiconductor Device
03/27/2014US20140084388 Semiconductor device and method for producing the same
03/27/2014US20140084387 Non-planar iii-v field effect transistors with conformal metal gate electrode & nitrogen doping of gate dielectric interface
03/27/2014US20140084386 Semiconductor device
03/27/2014US20140084385 Deeply depleted mos transistors having a screening layer and methods thereof
03/27/2014US20140084384 Semiconductor devices and methods of fabricating the same
03/27/2014US20140084383 Methods of forming 3-d semiconductor devices using a replacement gate technique and a novel 3-d device
03/27/2014US20140084382 Dual metal fill and dual threshold voltage for replacement gate metal devices
03/27/2014US20140084377 Semiconductor device and fabricating method thereof
03/27/2014US20140084372 Dual shallow trench isolation liner for preventing electrical shorts
03/27/2014US20140084371 Multi-gate field effect transistor devices
03/27/2014US20140084370 Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates
03/27/2014US20140084369 Semiconductor device having doped epitaxial region and its methods of fabrication
03/27/2014US20140084368 Semiconductor Device with Increased Breakdown Voltage
03/27/2014US20140084367 Extended Source-Drain MOS Transistors And Method Of Formation
03/27/2014US20140084366 Esd protection circuit
03/27/2014US20140084365 Semiconductor device
03/27/2014US20140084364 Semiconductor device and method for manufacturing semiconductor device
03/27/2014US20140084363 Mos transistor structure
03/27/2014US20140084362 Semiconductor Device and Method for Manufacturing a Semiconductor Device
03/27/2014US20140084361 Power semiconductor device
03/27/2014US20140084360 Integrated vertical trench mos transistor
03/27/2014US20140084359 Semiconductor device and method for manufacturing the same
03/27/2014US20140084358 Nonvolatile memory device and method for fabricating the same
03/27/2014US20140084357 Semiconductor device and method of fabricating the same
03/27/2014US20140084356 Semiconductor storage device and method for manufacturing the same
03/27/2014US20140084355 Apparatus having a dielectric containing scandium and gadolinium
03/27/2014US20140084354 Flash memory with p-type floating gate
03/27/2014US20140084353 Nonvolatile semiconductor memory device
03/27/2014US20140084351 Replacement channels for semiconductor devices and methods for forming the same using dopant concentration boost
03/27/2014US20140084350 Semiconductor device including transistor and method of manufacturing the same
03/27/2014US20140084349 Microelectronic Component and Corresponding Production Process
03/27/2014US20140084347 Bidirectional heterojunction compound semiconductor protection devices and methods of forming the same
03/27/2014US20140084346 Switching element
03/27/2014US20140084345 Compound semiconductor device and method of manufacturing the same
03/27/2014US20140084344 Compound semiconductor device and method for manufacturing the same
03/27/2014US20140084343 Non-planar semiconductor device having group iii-v material active region with multi-dielectric gate stack
03/27/2014US20140084342 Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates
03/27/2014US20140084341 Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
03/27/2014US20140084340 Contact Structure Of Semiconductor Device
03/27/2014US20140084339 Compound semiconductor device and method of manufacturing the same
03/27/2014US20140084338 Semiconductor wafer, semiconductor device, and method for manufacturing nitride semiconductor layer
03/27/2014US20140084337 Semiconductor device
03/27/2014US20140084336 Semiconductor device
03/27/2014US20140084335 Semiconductor device and method for fabricating semiconductor device
03/27/2014US20140084334 Power semiconductor device
03/27/2014US20140084333 Power semiconductor device
03/27/2014US20140084332 Semiconductor device and method for fabricating the same
03/27/2014US20140084331 Heterojunction compound semiconductor protection clamps and methods of forming the same
03/27/2014US20140084304 Semiconductor device
03/27/2014US20140084303 Semiconductor device and method for manufacturing the same
03/27/2014US20140084302 Integrated circuit, a chip package and a method for manufacturing an integrated circuit
03/27/2014US20140084300 Semiconductor device
03/27/2014US20140084299 Vertical microelectronic component and corresponding production method
03/27/2014US20140084298 Nitride compound semiconductor device and manufacturing method thereof
03/27/2014US20140084297 Group iii nitride wafers and fabrication method and testing method
03/27/2014US20140084296 Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer
03/27/2014US20140084293 Thin film transistor array panel and method of manufacturing the same
03/27/2014US20140084292 Connection to First Metal Layer in Thin Film Transistor Process
03/27/2014US20140084291 Active Device Array Substrate and Manufacturing Method Thereof
03/27/2014US20140084290 Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applications
03/27/2014US20140084289 Thin-film transistor
03/27/2014US20140084288 ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND METHOD FOR PRODUCING THE SAME
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