Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2014
04/03/2014US20140091323 Semiconductor epitaxial structure
04/03/2014US20140091322 Semiconductor device and method of manufacturing the same
04/03/2014US20140091320 Semiconductor device and method for manufacturing a semiconductor device
04/03/2014US20140091319 Method of manufacturing a semiconductor device and semiconductor device
04/03/2014US20140091318 Semiconductor apparatus
04/03/2014US20140091317 Method of manufacturing semiconductor crystal substrate, method of manufacturing semiconductor apparatus, semiconductor crystal substrate, and semiconductor apparatus
04/03/2014US20140091316 Semiconductor device and manufacturing method of semiconductor device
04/03/2014US20140091315 Semiconductor device and manufacturing method of semiconductor device
04/03/2014US20140091314 Semiconductor apparatus
04/03/2014US20140091313 Semiconductor apparatus
04/03/2014US20140091312 Power switching device and method of manufacturing the same
04/03/2014US20140091311 Nitride semiconductor based power converting device
04/03/2014US20140091310 Semiconductor device using 2-dimensional electron gas and 2-dimensional hole gas and method of manufacturing the semiconductor device
04/03/2014US20140091309 Predisposed high electron mobility transistor
04/03/2014US20140091308 Self-aligned structures and methods for asymmetric gan transistors & enhancement mode operation
04/03/2014US20140091306 Wiring structure and display device
04/03/2014US20140091302 P-type metal oxide semiconductor material thing
04/03/2014US20140091281 Non-volatile memory device employing semiconductor nanoparticles
04/03/2014US20140091279 Non-planar semiconductor device having germanium-based active region with release etch-passivation surface
04/03/2014DE19964481B4 MOS-Halbleiteranordnung mit Schutzeinrichtung unter Verwendung von Zenerdioden MOS semiconductor device with protection device using Zener diodes
04/03/2014DE112012002603T5 Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung A semiconductor device and method of manufacturing a semiconductor device
04/03/2014DE112011105448T5 Verfahren zum Herstellen einer Halbleitervorrichtung A method of manufacturing a semiconductor device
04/03/2014DE112006000208B4 Speicherbauelement mit trapezförmigen Bitleitungen und Verfahren zur Herstellung desselben, und Array von Speicherelementen Memory device with trapezoidal bit lines and methods for manufacturing the same, and the array of memory elements
04/03/2014DE102013219654A1 Elektronische Schaltung mit einem rückwärtsleitenden Transistorbauelement Electronic circuit with a reverse conducting transistor device
04/03/2014DE102013219499A1 Halbleitervorrichtung Semiconductor device
04/03/2014DE102013219175A1 Niedrigleistungs-Ansteuerschaltung und -verfahren für einen Hochspannungs-Halbleiterschalter Low-power control circuit and method for a high voltage semiconductor switch
04/03/2014DE102012217979A1 Hybrid integriertes Drucksensor-Bauteil Hybrid integrated pressure sensor component
04/03/2014DE102012217932A1 Optoelectronic component has LEDs whose contact surfaces are electrically contacted with the contact surfaces of Zener diodes that are electrically connected in series, such that the LEDs are electrically connected in series
04/03/2014DE102008051443B4 Halbleitermodul und Herstellungsverfahren hierfür Semiconductor module, and manufacturing method thereof
04/02/2014EP2713402A2 Normally-off high electron mobility transistor
04/02/2014EP2713401A1 Polysilicon thin film and manufacturing method thereof, array substrate and display device
04/02/2014EP2713386A1 Process for manufacturing semiconductor devices, such as super-barrier sbr rectifiers
04/02/2014EP2713385A1 Active layer ion implantation method and active layer ion implantation method for thin-film transistor
04/02/2014EP2712466A1 Heterojunction unipolar diode with low turn-on voltage
04/02/2014CN203521431U Thin film transistor, array substrate and display device
04/02/2014CN203521430U Thin film transistor, array substrate, and display device
04/02/2014CN203521429U Array substrate and display device
04/02/2014CN203521428U Transistor without PN junction and with U-shaped tubular channel
04/02/2014CN203521427U Channel voltage dividing field effect tube based on high-energy ion implantation mode
04/02/2014CN203521426U Lateral transistor
04/02/2014CN203521425U Adjustable constant current tube based on two-dimensional electron gas
04/02/2014CN203521424U Semi-gate-controlled source-electrode Schottky-barrier tunneling field effect transistor
04/02/2014CN203521423U Insulated gate bipolar transistor
04/02/2014CN203521422U Insulated gate bipolar translator (IGBT) layout
04/02/2014CN203521421U Semiconductor device
04/02/2014CN203521417U Active matrix organic electroluminescence display part and display device
04/02/2014CN203521413U Array substrate and display device
04/02/2014CN203521411U Array substrate and display device
04/02/2014CN203521409U Thin film transistor preparation system, thin film transistor and array substrate
04/02/2014CN103703566A Semiconductor device, and manufacturing method for same
04/02/2014CN103703565A 半导体装置 Semiconductor device
04/02/2014CN103703548A Glass composition for semiconductor junction protection, method for producing semiconductor device, and semiconductor device
04/02/2014CN103700712A Structure of fast recovery diode (FRD) and manufacturing method thereof
04/02/2014CN103700711A Junction type field effect tube structure
04/02/2014CN103700710A IGZO (indium gallium zinc oxide) thin film transistor and preparing method thereof
04/02/2014CN103700709A Thin film transistor and preparation method thereof, array substrate and display
04/02/2014CN103700708A Thin film transistor and manufacturing method thereof as well as array substrate and display device thereof
04/02/2014CN103700707A Thin-film transistor, thin-film transistor array substrate and preparation method thereof and display device
04/02/2014CN103700706A Thin film transistor, array substrate, respective preparation method thereof and display device
04/02/2014CN103700705A IGZO (Indium Gallium Zinc Oxide) transistor structure, manufacture method and display panel thereof
04/02/2014CN103700704A Semiconductor device
04/02/2014CN103700703A Drain/source region medium (PN junction) isolation front grid N-MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) radio frequency switch ultralow loss device based on SOI (Silicon on Insulator) process
04/02/2014CN103700702A Drain/source region medium (PN junction) isolation front grid P-MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) radio frequency switch ultralow loss device based on SOI (Silicon on Insulator) process
04/02/2014CN103700701A Silicon on insulator (SOI) process-based back gate drain/source semi-floating front gate P type metal-oxide-semiconductor field effect transistor (P-MOSFET) radio frequency switch zero loss device
04/02/2014CN103700700A Compound semiconductor device and method of manufacturing the same
04/02/2014CN103700699A Gate metal structure and manufacturing method thereof
04/02/2014CN103700698A Preparation method of thin film transistor, thin film transistor and display panel
04/02/2014CN103700697A Longitudinal super junction metal oxide field effect transistor
04/02/2014CN103700696A Uniformly radiating GaN tube core adopting tube series connection structure
04/02/2014CN103700695A Low-temperature polycrystalline silicon film as well as preparation method thereof and transistor
04/02/2014CN103700659A Semiconductor device
04/02/2014CN103700658A High-voltage circuit layout design structure
04/02/2014CN103700590A Manufacture method for realizing bipolar IC (integrated circuit) structure of Schottky diode and bipolar IC structure
04/02/2014CN103141026B Semiconductor device, power converter and method for controlling the power converter
04/02/2014CN102646630B TFT-LCD (thin film transistor liquid crystal display) array substrate structure and manufacturing method thereof
04/02/2014CN102610635B High-density graded field limiting ring structure and manufacturing process thereof
04/02/2014CN102479706B Transistor and manufacturing method thereof
04/02/2014CN102449489B Physical quantity sensor
04/02/2014CN102446862B Novel double-bit line SONOS (silicon oxide nitride oxide silicon) unit structure and manufacturing method thereof
04/02/2014CN102446764B MOS (Metal Oxide Semiconductor) transistor and manufacturing method thereof
04/02/2014CN102437176B Process for increasing capacitance density of integrated circuit
04/02/2014CN102420139B MOS (Metal Oxide Semiconductor) transistor and production method thereof
04/02/2014CN102197468B Compound semiconductor device and method for manufacturing the same
04/02/2014CN102034817B Semiconductor device and power converter using it
04/01/2014US8689152 Double-sided integrated circuit chips
04/01/2014US8687827 Micro-electro-mechanical system microphone chip with expanded back chamber
04/01/2014US8686573 Semiconductor device
04/01/2014US8686569 Die arrangement and method of forming a die arrangement
04/01/2014US8686568 Semiconductor package substrates having layered circuit segments, and related methods
04/01/2014US8686567 Semiconductor device having plural wiring layers
04/01/2014US8686562 Refractory metal nitride capped electrical contact and method for frabricating same
04/01/2014US8686540 Semiconductor device having high frequency wiring and dummy metal layer at multilayer wiring structure
04/01/2014US8686538 Semiconductor device with a fuse formed by a damascene technique and a method of manufacturing the same
04/01/2014US8686537 Apparatus and methods for reducing impact of high RF loss plating
04/01/2014US8686534 Trench isolation structure and method for forming the same
04/01/2014US8686533 Isolation structure
04/01/2014US8686532 Semiconductor device having an annular guard ring
04/01/2014US8686531 Structure and method for forming a guard ring to protect a control device in a power semiconductor IC
04/01/2014US8686530 Electronic component and a method of manufacturing an electronic component
04/01/2014US8686524 Magnetic stack with oxide to reduce switching current
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