Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2003
06/26/2003US20030117219 Multi-band power amplifier
06/26/2003US20030117151 Semiconductor device and method of checking semiconductor storage device
06/26/2003US20030116851 Micro-scale interconnect device with internal heat spreader and method for fabricating same
06/26/2003US20030116848 MEMS device having a trilayered beam and related methods
06/26/2003US20030116847 Magnetic random access memory using schottky diode
06/26/2003US20030116829 Process insensitive electronic driver circuitry for integrated RF switching diodes
06/26/2003US20030116828 Process and temperature compensation circuit for integrated RF switching
06/26/2003US20030116827 Methods, apparatus, and systems for reducing interference on nearby conductors
06/26/2003US20030116824 Bipolar transistor
06/26/2003US20030116823 Semiconductor device and fabrication method thereof
06/26/2003US20030116822 Bipolar transistor and method for manufacturing the same
06/26/2003US20030116821 Semiconductor device and a process for producing same
06/26/2003US20030116813 Multilayer; substrate, doped layer, covering; monolithic integrated circuit
06/26/2003US20030116812 Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering
06/26/2003US20030116811 Semiconductor device and method for fabricating the same
06/26/2003US20030116808 Semiconductor device having contact electrode to semiconductor substrate
06/26/2003US20030116807 Insulated gate bipolar transistor
06/26/2003US20030116805 Semiconductor device and method of fabricating the same
06/26/2003US20030116804 Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing
06/26/2003US20030116803 Cylinder type transistor with vertical silicon-on-insulator structure and fabrication method thereof
06/26/2003US20030116802 Method of manufacturing semiconductor substrate, semiconductor substrate, electro-optical apparatus and electronic equipment
06/26/2003US20030116801 Semiconductor device, semiconductor gate array, electro-optical device, and electronic equipment
06/26/2003US20030116800 Semiconductor device and method for fabricating the same
06/26/2003US20030116799 Semiconductor device with capacitor electrodes
06/26/2003US20030116798 Semiconductor device having trench capacitor and method for fabricating the same
06/26/2003US20030116797 Semiconductor device and fabricating method thereof
06/26/2003US20030116796 Trench capacitor with expanded area and method of making the same
06/26/2003US20030116795 Method of manufacturing a tantalum pentaoxide - aluminum oxide film and semiconductor device using the film
06/26/2003US20030116792 Submicron MOSFET having asymmetric channel profile
06/26/2003US20030116789 Semiconductor memory and method for fabricating the same
06/26/2003US20030116785 Multiple conductive plug structure for lateral RF MOS devices
06/26/2003US20030116783 Semiconductor device
06/26/2003US20030116782 Multilayer; forming diode
06/26/2003US20030116781 Semiconductor device and method of manufacturing the same
06/26/2003US20030116780 Field effect transistor switch circuit
06/26/2003US20030116779 Connecting anode, cathode; electric circuit protective device
06/26/2003US20030116778 Semiconductor apparatus
06/26/2003US20030116768 Semiconductor device and manufacturing method thereof
06/26/2003US20030116766 Semiconductor device and electronic device
06/26/2003US20030116764 Thin film transistor substrate and liquid crystal display
06/26/2003US20030116762 Single-chip structure of silicon germanium photodetector and high-speed transistor
06/26/2003US20030116552 Heating element for microfluidic and micromechanical applications
06/26/2003US20030116531 Method of forming one or more nanopores for aligning molecules for molecular electronics
06/26/2003US20030116417 MEMS device having contact and standoff bumps and related methods
06/26/2003US20030116149 Vehicle-mounted ignitor
06/26/2003US20030115960 Micromechanical structure, in particular for an acceleration sensor or yaw rate sensor and a corresponding method for producing the same
06/26/2003DE10207980C1 Floating gate storage cell used in the production of a switching circuit arrangement comprises source/drain regions and a floating gate layer made from a conducting material
06/26/2003CA2470946A1 Controlled growth of single-wall carbon nanotubes
06/26/2003CA2470792A1 Sensor formed on silicon on insulator structure and having reduced power up drift
06/26/2003CA2469912A1 Organic field effect transistor with an organic dielectric
06/26/2003CA2466151A1 A method for fabricating high aspect ratio electrodes
06/25/2003EP1321985A1 Metal Oxide Semiconductor Field Effect Transistor
06/25/2003EP1321973A2 CVD deposition of a metal-silicon-oxynitride gate dielectrics
06/25/2003EP1321797A2 Transmission type liquid crystal display device and method for fabricating the same
06/25/2003EP1320898A2 High voltage insulated-gate bipolar switch
06/25/2003EP1320897A1 Method for producing a body consisting of semiconductor material having a reduced mean free path length
06/25/2003EP1320896A1 Body consisting of semiconductor material, comprising a reduced mean free path length
06/25/2003EP1320895A2 Trench dmos transistor having lightly doped source structure
06/25/2003EP1320886A1 Dram fabricated on a silicon-on-insulator (soi) substrate having bi-level digit lines
06/25/2003EP1320883A1 PREPARATION OF A RELAXED SiGe LAYER ON AN INSULATOR
06/25/2003EP1320878A2 Process for the fabrication of mosfet devices depletion, silicided source and drain junctions
06/25/2003EP1320872A2 Fabrication of semiconductor devices
06/25/2003EP1320813A2 Automatic check for cyclic operating conditions for soi circuit simulation
06/25/2003EP1101087B1 Flexible silicon strain gage
06/25/2003EP0843898B1 Short channel fermi-threshold field effect transistors
06/25/2003CN1426598A Method for making trench gate DMOS transistor
06/25/2003CN1426114A Non-volatile semiconductor memory and method
06/25/2003CN1426113A Non-volatile semiconductor memory and its producing process
06/25/2003CN1426111A 半导体电路和半导体器件 Semiconductor circuit and a semiconductor device
06/25/2003CN1426110A Semiconductor device and its producing method
06/25/2003CN1426108A Static discharge protective circuit and method in integrated circuit
06/25/2003CN1426106A 半导体装置 Semiconductor device
06/25/2003CN1426100A High-K grating oxide with titanium buffering layer used for metal iron electric oxide and silicon single tube unit memory
06/25/2003CN1426093A Method for producing semiconductor power device
06/25/2003CN1426043A Image display device and its producing method
06/25/2003CN1425947A Semiconductor device, electrooptic device and electronic device
06/25/2003CN1425899A Semiconductor dynamic size sensor
06/25/2003CN1112735C Photedetector involving mosfet having floating gate
06/25/2003CN1112732C Semiconductor memory device
06/24/2003US6584008 Ferroelectric non-volatile memory device including a layered structure formed on a substrate
06/24/2003US6584005 Semiconductor memory device preventing erroneous writing in write operation and delay in read operation
06/24/2003US6583828 Liquid crystal display device and its manufacturing method
06/24/2003US6583818 Solid state image sensor with readout modes having different drive phases
06/24/2003US6583512 Semiconductor device and method for fabricating the same
06/24/2003US6583510 Semiconductor device with varying thickness gold electrode
06/24/2003US6583494 Reduced base resistance in a bipolar transistor
06/24/2003US6583493 Single event upset hardening technique for bipolar devices
06/24/2003US6583492 Capacitor element having a contact hole structure in an electrode structure
06/24/2003US6583490 One time programmable semiconductor nonvolatile memory device and method for production of same
06/24/2003US6583487 Power component bearing interconnections
06/24/2003US6583485 Schottky diode
06/24/2003US6583479 Sidewall NROM and method of manufacture thereof for non-volatile memory cells
06/24/2003US6583477 Field emission device
06/24/2003US6583474 Semiconductor device
06/24/2003US6583472 Semiconductor device and method of manufacturing thereof
06/24/2003US6583469 Channel region with wider tappered source/drain abutments avoiding high overlap capacitance
06/24/2003US6583468 Decreased dislocation density of epitaxially grown nitride layer; field effect transistors
06/24/2003US6583467 Semiconductor integrated circuit device
06/24/2003US6583465 Code addressable memory cell in a flash memory device
06/24/2003US6583463 Semiconductor integrated circuit device with information storage capacitor having ruthenium dioxide lower electrode and crystallized TA2O5 capacitor insulator
1 ... 1615 1616 1617 1618 1619 1620 1621 1622 1623 1624 1625 1626 1627 1628 1629 1630 1631 1632 1633 1634 1635 ... 2182