Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2014
04/08/2014US8691687 Superfilled metal contact vias for semiconductor devices
04/08/2014US8691681 Semiconductor device having a metal gate and fabricating method thereof
04/08/2014US8691679 Semiconductor device and method of manufacturing the same
04/08/2014US8691653 Semiconductor structure with reduced surface field effect and manufacturing process thereof
04/08/2014US8691652 Semiconductor process
04/08/2014US8691635 Fabrication method of semiconductor device
04/08/2014US8691610 Semiconductor device and method for manufacturing the same
04/08/2014US8691604 Semiconductor device and manufacturing method thereof, delamination method, and transferring method
04/08/2014US8691392 Junctions comprising molecular bilayers for the use in electronic devices
04/08/2014CA2590626C Transistors having buried n-type and p-type regions beneath the source region and methods of fabricating the same
04/07/2014DE202014101171U1 Ohmsche Kontaktstruktur für Halbleiterbauelement The ohmic contact structure for semiconductor device
04/03/2014WO2014052948A1 Semiconductor device with breakdown preventing layer
04/03/2014WO2014052559A1 Embedded circuit in a mems device
04/03/2014WO2014052001A1 Periphery transistor of a non-volatile memory and method of forming the same
04/03/2014WO2014051911A1 Extended source-drain mos transistors and method of formation
04/03/2014WO2014051779A1 Epitaxial buffer layers for group iii-n transistors on silicon substrates
04/03/2014WO2014051773A1 Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer
04/03/2014WO2014051769A1 Methods of containing defects for non-silicon device engineering
04/03/2014WO2014051762A1 Trench confined epitaxially grown device layer(s)
04/03/2014WO2014051760A1 Extended drain non-planar mosfets for electrostatic discharge (esd) protection
04/03/2014WO2014051738A1 Non-planar semiconductor device having group iii-v material active region with multi-dielectric gate stack
04/03/2014WO2014051732A1 Self-aligned structures and methods for asymmetric gan transistors & enhancement mode operation
04/03/2014WO2014051723A1 Non-planar semiconductor device having germanium-based active region with release etch-passivation surface
04/03/2014WO2014051719A1 Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates
04/03/2014WO2014050740A1 Switching element
04/03/2014WO2014050636A1 Semiconductor device, display panel, and semiconductor device manufacturing method
04/03/2014WO2014050590A1 Semiconductor device and method for manufacturing same
04/03/2014WO2014050457A1 Electronic device, image display device, sensor and method for manufacturing electronic device
04/03/2014WO2014050422A1 Chip diode and method for manufacturing same
04/03/2014WO2014050379A1 Storage element, storage device, and magnetic head
04/03/2014WO2014050250A1 Laminated semiconductor substrate and semiconductor element
04/03/2014WO2014050229A1 Device member comprising cavity and production method for device member comprising cavity
04/03/2014WO2014050054A1 Semiconductor device
04/03/2014WO2014049970A1 Thin film transistor array and image display apparatus
04/03/2014WO2014049968A1 Thin-film transistor and method for producing same
04/03/2014WO2014049967A1 Layered structure and thin-film-transistor array, and method for producing same
04/03/2014WO2014049807A1 Semiconductor device and power conversion apparatus using same
04/03/2014WO2014049806A1 Silicon carbide semiconductor device and method for manufacturing same
04/03/2014WO2014049802A1 Schottky barrier diode and method for manufacturing same
04/03/2014WO2014049774A1 Structure of electrode of semiconductor element, and method for manufacturing structure of electrode of semiconductor element
04/03/2014WO2014049500A1 Current switching transistor
04/03/2014WO2014048504A1 Semiconductor component comprising at least one contact structure for feeding in and/or leading away charge carriers
04/03/2014WO2014048046A1 Trench-type terminal for semiconductor power device and preparation method therefor
04/03/2014WO2014047990A1 Manufacturing method for semiconductor structure
04/03/2014WO2014047981A1 Method for manufacturing thin-film transistor and thin-film transistor manufactured thereby
04/03/2014WO2014047980A1 Method for manufacturing thin-film transistor active device and thin-film transistor active device manufactured thereby
04/03/2014WO2014047704A1 Method for preparing super-hydrophobic nanomembranes and product
04/03/2014WO2014025722A3 Method and system for gallium nitride electronic devices using engineered substrates
04/03/2014WO2014006320A3 Substrate comprising a layer of silicon and/or germanium and one or a plurality of objects of varying shapes
04/03/2014US20140094223 Epitaxial buffer layers for group iii-n transistors on silicon substrates
04/03/2014US20140094027 Film forming method and film forming apparatus
04/03/2014US20140094014 Contact structures for semiconductor transistors
04/03/2014US20140094013 Fabricating method of trench-gate metal oxide semiconductor device
04/03/2014US20140094005 Enhancement-Mode GaN MOSFET with Low Leakage Current and Improved Reliability
04/03/2014US20140094003 Printed Material Constrained By Well Structures And Devices Including Same
04/03/2014US20140093992 Gas sensor and method for manufacturing the gas sensor
04/03/2014US20140092689 Method for programming non-volatile memory cell, non-volatile memory array and non-volatile memory apparatus
04/03/2014US20140092638 Compound semiconductor device and method of manufacturing the same
04/03/2014US20140092637 Compound semiconductor device and method of manufacturing the same
04/03/2014US20140092636 Compound semiconductor device and method of manufacturing the same
04/03/2014US20140092635 Compound semiconductor device and method of manufacturing the same
04/03/2014US20140091855 Dual depth trench-gated mos-controlled thyristor with well-defined turn-on characteristics
04/03/2014US20140091845 High breakdown voltage iii-n depletion mode mos capacitors
04/03/2014US20140091439 Silicon shaping
04/03/2014US20140091436 Epitaxial structure
04/03/2014US20140091434 Patterned Bases, and Patterning Methods
04/03/2014US20140091433 Method of producing semiconductor wafer, and semiconductor wafer
04/03/2014US20140091424 Compound semiconductor device and manufacturing method thereof
04/03/2014US20140091422 Thin Film with Improved Temperature Range
04/03/2014US20140091411 Repeated Spin Current Interconnects
04/03/2014US20140091406 MEMS Microphone System for Harsh Environments
04/03/2014US20140091403 Method for producing semiconductor device and semiconductor device
04/03/2014US20140091402 Integrated circuit metal gate structure
04/03/2014US20140091400 Gate Dielectric Of Semiconductor Device
04/03/2014US20140091390 Protection Layer for Halftone Process of Third Metal
04/03/2014US20140091389 High voltage metal-oxide-semiconductor transistor device
04/03/2014US20140091388 Semiconductor device and method of fabricating the same
04/03/2014US20140091387 Semiconductor device
04/03/2014US20140091386 Mosfet device and fabrication
04/03/2014US20140091385 Semiconductor device
04/03/2014US20140091384 Reverse Polarity Protection for n-Substrate High-Side Switches
04/03/2014US20140091383 Semiconductor device
04/03/2014US20140091382 Split-Gate Memory Cell With Substrate Stressor Region, And Method Of Making Same
04/03/2014US20140091381 Support lines to prevent line collapse in arrays
04/03/2014US20140091380 Split Gate Flash Cell
04/03/2014US20140091373 Semiconductor Device with Breakdown Preventing Layer
04/03/2014US20140091372 Method for producing semiconductor device and semiconductor device
04/03/2014US20140091371 Semiconductor device
04/03/2014US20140091370 Transistor formation using cold welding
04/03/2014US20140091369 High voltage metal-oxide-semiconductor transistor device
04/03/2014US20140091366 Semiconductor devices and methods of manufacturing the same
04/03/2014US20140091365 Compound semiconductor device and method of manufacturing the same
04/03/2014US20140091364 Compound semiconductor device and method of manufacturing the same
04/03/2014US20140091363 Normally-off high electron mobility transistor
04/03/2014US20140091362 INTEGRATED CIRCUIT TRANSISTOR STRUCTURE WITH HIGH GERMANIUM CONCENTRATION SiGe STRESSOR
04/03/2014US20140091360 Trench confined epitaxially grown device layer(s)
04/03/2014US20140091359 Semiconductor device
04/03/2014US20140091358 MCT Device with Base-Width-Determined Latching and Non-Latching States
04/03/2014US20140091339 Semiconductor device, display, and electronic apparatus
04/03/2014US20140091325 SiC SINGLE CRYSTAL, PRODUCTION METHOD THEREFOR, SiC WAFER AND SEMICONDUCTOR DEVICE
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