| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 05/20/2004 | US20040094808 Oxide interface and a method for fabricating oxide thin films |
| 05/20/2004 | US20040094807 Tri-gate devices and methods of fabrication |
| 05/20/2004 | US20040094806 High performance, integrated, MOS-type semiconductor device and related manufacturing process |
| 05/20/2004 | US20040094805 Semiconductor device and method of manufacturing the same |
| 05/20/2004 | US20040094803 Semiconductor device for limiting leakage current |
| 05/20/2004 | US20040094802 Semiconductor device and method of forming the same |
| 05/20/2004 | US20040094800 High voltage semiconductor device having high breakdown voltage and method of fabricating the same |
| 05/20/2004 | US20040094799 Forming a trench MOS gate which is applied to a power device. |
| 05/20/2004 | US20040094798 Semiconductor device |
| 05/20/2004 | US20040094797 MOS transistor having short channel and manufacturing method thereof |
| 05/20/2004 | US20040094796 Semiconductor device having multi-layered spacer and method of manufacturing the same |
| 05/20/2004 | US20040094795 Self-aligned floating-gate structure for flash memory device |
| 05/20/2004 | US20040094794 Stacked-gate cell structure and its nand-type flash memory array |
| 05/20/2004 | US20040094793 Semiconductor memory device |
| 05/20/2004 | US20040094792 Variable capacitance device and process for manufacturing the same |
| 05/20/2004 | US20040094789 Trench buried bit line memory devices and methods thereof |
| 05/20/2004 | US20040094788 Methods of forming semiconductor constructions |
| 05/20/2004 | US20040094787 Structures and methods for improved capacitor cells in integrated circuits |
| 05/20/2004 | US20040094786 Trench buried bit line memory devices and methods thereof |
| 05/20/2004 | US20040094785 Magentic memory element and memory device including same |
| 05/20/2004 | US20040094782 MOS transistor having a cap layer comprised of a high dielectric constant material. |
| 05/20/2004 | US20040094776 Non-volatile memory device and method for fabricating the same |
| 05/20/2004 | US20040094775 Complementary couple-carry field transistor and the system formed on a substrate |
| 05/20/2004 | US20040094767 Semiconductor apparatus having semiconductor circuits made of semiconductor devices, and method of manufacturing thereof |
| 05/20/2004 | US20040094765 Semiconductor device and semiconductor display device |
| 05/20/2004 | US20040094760 Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal |
| 05/20/2004 | US20040094759 Process for fabricating ultra-low contact resistances in GaN-based devices |
| 05/20/2004 | US20040094758 Semiconductor apparatus |
| 05/20/2004 | US20040094755 Photocathode |
| 05/20/2004 | US20040094085 Process for preparing p-n junctions having a p-type ZnO film |
| 05/20/2004 | US20040093946 Capacitance type acceleration sensor |
| 05/19/2004 | EP1420460A2 Photovoltaic element |
| 05/19/2004 | EP1420457A1 Insulated gate power semiconductor device with Schottky diode and manufacturing method thereof |
| 05/19/2004 | EP1420437A1 METHOD OF PRODUCING SEMICONDUCTOR THIN FILM, METHOD OF PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, ELECTROOPTICAL DEVICE AND ELECTRONIC APPARATUS |
| 05/19/2004 | EP1420414A1 Nonvolatile memory device utilising vertical nanotube |
| 05/19/2004 | EP1419532A2 Folded bit line dram with vertical ultra thin body transistors |
| 05/19/2004 | EP1419521A1 Xe preamorphizing implantation |
| 05/19/2004 | EP1419519A1 Coupled quantum dot and quantum well semiconductor device and method of making the same |
| 05/19/2004 | EP1419102A2 Method for producing micro-electromechanical components |
| 05/19/2004 | EP1250565B1 Angular rate sensor |
| 05/19/2004 | DE10350137A1 Halbleitereinrichtung Semiconductor device |
| 05/19/2004 | DE10250984A1 Feldeffekttransistor sowie Verfahren zu seiner Herstellung Field effect transistor, and methods for its preparation |
| 05/19/2004 | DE10250902A1 Production of semiconductor structural element used in production of integrated circuits comprises preparing substrate with a layer, covering substrate with second material layer, implanting ions, and further processing |
| 05/19/2004 | DE10250868A1 Vertikal integriertes Bauelement, Bauelement-Anordnung und Verfahren zum Herstellen eines vertikal integrierten Bauelements Vertically integrated component, component arrangement and method for manufacturing a vertically integrated component |
| 05/19/2004 | DE10250840A1 Single-crystal silicon-on-insulator field effect transistor production, includes ion implantation to produce localized defects, and tempering to form oxide clusters |
| 05/19/2004 | DE10250832A1 MOS-Transistor auf SOI-Substrat mit Source-Durchkontaktierung MOS transistor on an SOI substrate with source via hole |
| 05/19/2004 | DE10250830A1 Feldeffekttransistor-Anordnung und Schaltkreis-Array Field effect transistor arrangement and circuit array |
| 05/19/2004 | DE10250829A1 Nichtflüchtige Speicherzelle, Speicherzellen-Anordnung und Verfahren zum Herstellen einer nichtflüchtigen Speicherzelle A non-volatile memory cell, memory cell arrangement and method of manufacturing a non-volatile memory cell |
| 05/19/2004 | DE10250609A1 Thyristor component with improved blocking in backwards direction has four semiconductor zones with two meeting at an inclined edge and a fourth zone split by the second |
| 05/19/2004 | DE10250608A1 Thyristorbauelement mit verbessertem Sperrverhalten in Rückwärtsrichtung Thyristor device with improved locking behavior in the reverse direction |
| 05/19/2004 | DE10250575A1 Insulated gate bipolar transistor with monolithically integrated antiparallel diode, has complimentary electrode of antiparallel diode formed by semiconductor well on front side |
| 05/19/2004 | DE10250175A1 Power transistor especially field effect transistor for automotive applications comprises two semiconductors with source drain and trench gate electrode controls |
| 05/19/2004 | DE10153315B4 Halbleiterbauelement Semiconductor device |
| 05/19/2004 | CN1498425A Trench Schottky rectifier |
| 05/19/2004 | CN1498040A Electroluminescence display device |
| 05/19/2004 | CN1497957A Solid-state camera element and its manufacturing method |
| 05/19/2004 | CN1497743A Device with nitrides system heterogenous structure and its manufacturing method |
| 05/19/2004 | CN1497740A 半导体装置 Semiconductor device |
| 05/19/2004 | CN1497739A Semiconductor device and its manufacturing method |
| 05/19/2004 | CN1497738A Semiconductor device and its manufacturing method |
| 05/19/2004 | CN1497737A Semiconductor device and its manufacturing method |
| 05/19/2004 | CN1497736A Semiconductor device and its manufacturing method |
| 05/19/2004 | CN1497735A Ferroelectric memory transistor and its forming method |
| 05/19/2004 | CN1497734A 双极型晶体管 Bipolar transistor |
| 05/19/2004 | CN1497733A Cmos图像传感器 Cmos image sensor |
| 05/19/2004 | CN1497727A Semiconductor device and its manufacturing method |
| 05/19/2004 | CN1497725A 半导体集成电路装置 The semiconductor integrated circuit device |
| 05/19/2004 | CN1497724A Semiconductor device and its production method |
| 05/19/2004 | CN1497722A Switching circuit device |
| 05/19/2004 | CN1497708A Manufacturing method of semiconductor device and manufactured semiconductor device |
| 05/19/2004 | CN1497685A Method for manufacturing thin film transistor using double or multiple grid |
| 05/19/2004 | CN1497684A Method of illuminating laser, laser illuminating system and manufacturing method of semiconductor device |
| 05/19/2004 | CN1497680A Semiconductor chip with asymmetric edge contour and manufacturing method thereof |
| 05/19/2004 | CN1497679A Manufacturing method of semiconductor device |
| 05/19/2004 | CN1497675A Semiconductor film and its manufacturing method and semiconductor device and display device using it |
| 05/19/2004 | CN1497669A Semiconductor chip and its manufacturing method |
| 05/19/2004 | CN1497660A Semiconductor device, annedling method, annealing device and display device |
| 05/19/2004 | CN1497602A Magnetic rendom access stroage |
| 05/19/2004 | CN1497529A Active luminous display device |
| 05/19/2004 | CN1497517A 显示装置 Display device |
| 05/19/2004 | CN1497516A 显示装置 Display device |
| 05/19/2004 | CN1497481A Circuit emulation device lead-in transistor with diffusion length dependency and method for generting transistor model |
| 05/19/2004 | CN1150628C Semiconductor integrated circuit device and its manufacture method |
| 05/19/2004 | CN1150627C Semiconductor device and manufacturing method thereof |
| 05/19/2004 | CN1150623C Semiconductor circuit device |
| 05/19/2004 | CN1150620C Film semiconductor integrated circuit |
| 05/19/2004 | CN1150615C Semiconductor device and method for manufacturing same |
| 05/19/2004 | CN1150610C Device with asymmetrical channel dopant profile and its manufacturing method |
| 05/19/2004 | CN1150596C Method and device for forming polyparaxylene MEMS |
| 05/19/2004 | CN1150595C Manufacturing method of semiconductor device |
| 05/19/2004 | CN1150421C Display panel |
| 05/18/2004 | US6738717 Crystal structure analysis method |
| 05/18/2004 | US6738484 Pressure responsive device and method of manufacturing semiconductor substrate for use in pressure responsive device |
| 05/18/2004 | US6738310 Nonvolatile semiconductor memory |
| 05/18/2004 | US6738291 Nonvolatile semiconductor memory device |
| 05/18/2004 | US6738290 Semiconductor memory device |
| 05/18/2004 | US6738253 Electronic power module and a power component designed to equip such a module |
| 05/18/2004 | US6738109 Thin film transistor substrate for liquid crystal display panel and manufacturing method thereof |
| 05/18/2004 | US6738108 Liquid crystal display device with first and second reference lines in each pixel |
| 05/18/2004 | US6738106 Liquid crystal display device |