| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/01/2004 | US6744089 Self-aligned lateral-transistor DRAM cell structure |
| 06/01/2004 | US6744087 Non-volatile memory using ferroelectric gate field-effect transistors |
| 06/01/2004 | US6744084 Two-transistor pixel with buried reset channel and method of formation |
| 06/01/2004 | US6744083 Submicron MOSFET having asymmetric channel profile |
| 06/01/2004 | US6744082 Static pass transistor logic with transistors with multiple vertical gates |
| 06/01/2004 | US6744080 Method of manufacturing a bipolar transistor of double-polysilicon, heterojunction-base type and corresponding transistor |
| 06/01/2004 | US6744079 Optimized blocking impurity placement for SiGe HBTs |
| 06/01/2004 | US6744078 Heterojunction structure with a charge compensation layer formed between two group III-V semiconductor layers |
| 06/01/2004 | US6744072 Substrates having increased thermal conductivity for semiconductor structures |
| 06/01/2004 | US6744071 Nitride semiconductor element with a supporting substrate |
| 06/01/2004 | US6744070 Thin film transistor and liquid crystal display device |
| 06/01/2004 | US6744069 Semiconductor device and its manufacturing method |
| 06/01/2004 | US6744065 Single electron devices |
| 06/01/2004 | US6743738 Dopant precursors and processes |
| 06/01/2004 | US6743720 Method of manufacturing a portion of a memory by selectively etching to remove metal nitride or metal oxynitride extrusions |
| 06/01/2004 | US6743709 Embedded metal nanocrystals |
| 06/01/2004 | US6743704 Method of manufacturing a semiconductor device |
| 06/01/2004 | US6743703 Power diode having improved on resistance and breakdown voltage |
| 06/01/2004 | US6743700 Semiconductor film, semiconductor device and method of their production |
| 06/01/2004 | US6743691 Semiconductor device and method for fabricating the same |
| 06/01/2004 | US6743689 Method of fabrication SOI devices with accurately defined monocrystalline source/drain extensions |
| 06/01/2004 | US6743688 High performance MOSFET with modulated channel gate thickness |
| 06/01/2004 | US6743687 Abrupt source/drain extensions for CMOS transistors |
| 06/01/2004 | US6743686 Sacrificial polysilicon sidewall process and rapid thermal spike annealing for advance CMOS fabrication |
| 06/01/2004 | US6743685 Semiconductor device and method for lowering miller capacitance for high-speed microprocessors |
| 06/01/2004 | US6743684 Method to produce localized halo for MOS transistor |
| 06/01/2004 | US6743683 Polysilicon opening polish |
| 06/01/2004 | US6743682 Method of manufacturing a semiconductor device |
| 06/01/2004 | US6743681 Methods of Fabricating Gate and Storage Dielectric Stacks having Silicon-Rich-Nitride |
| 06/01/2004 | US6743680 Process for manufacturing transistors having silicon/germanium channel regions |
| 06/01/2004 | US6743676 Method of forming a floating gate in a flash memory device |
| 06/01/2004 | US6743675 Floating gate memory fabrication methods comprising a field dielectric etch with a horizontal etch component |
| 06/01/2004 | US6743670 High dielectric constant materials forming components of DRAM such as deep-trench capacitors and gate dielectric (insulators) for support circuits |
| 06/01/2004 | US6743668 Process for forming a metal oxy-nitride dielectric layer by varying the flow rate of nitrogen into the chamber |
| 06/01/2004 | US6743667 Method of manufacturing an active matrix type device |
| 06/01/2004 | US6743666 Selective thickening of the source-drain and gate areas of field effect transistors |
| 06/01/2004 | US6743662 Silicon-on-insulator wafer for RF integrated circuit |
| 06/01/2004 | US6743649 Semiconductor device and manufacturing method thereof |
| 06/01/2004 | US6743406 Gradually advancing silicon anode into hydrofluoric acid and hydrogen peroxide etchant solution; creating electrical current density to; immersing anode in dilute hydrofluoric acid solution; separating nanoparticles |
| 06/01/2004 | US6742762 Display device having a pixel portion |
| 05/27/2004 | WO2004044992A1 Double gate semiconductor device having separate gates |
| 05/27/2004 | WO2004044990A1 One transistor dram cell structure and method for forming |
| 05/27/2004 | WO2004044989A1 Grounded gate and isolation techniques for reducing dark current in cmos image sensors |
| 05/27/2004 | WO2004044988A1 High gain bipolar transistor |
| 05/27/2004 | WO2004044984A2 Chip-scale schottky device |
| 05/27/2004 | WO2004044983A1 Semiconductor device and method therefor |
| 05/27/2004 | WO2004044980A2 Hermetically encapsulated component and waferscale method for the production thereof |
| 05/27/2004 | WO2004044973A1 Planarizing gate material to improve gate critical dimension in semiconductor devices |
| 05/27/2004 | WO2004034468A9 Flash memory array with increased coupling between floating and control gates |
| 05/27/2004 | WO2004019373A3 Nanocrystal electron device |
| 05/27/2004 | WO2004006315A3 Semiconductor capacitor and mosfet fitted therewith |
| 05/27/2004 | WO2004001808A3 Method and system for atomic layer removal and atomic layer exchange |
| 05/27/2004 | WO2003094200A3 Low voltage high density trench-gated power device with uniformly doped channel and its edge termination technique |
| 05/27/2004 | WO2003069658B1 Strained si based layer made by uhv-cvd, and devices therein |
| 05/27/2004 | WO2003034500A3 Trench-gate semiconductor devices and their manufacture |
| 05/27/2004 | WO2003023863A3 Trench-gate semiconductor devices and their manufacture |
| 05/27/2004 | WO2003015152A3 Method of manufacturing a semiconductor non-volatile memory |
| 05/27/2004 | WO2003001584A8 A non-self-aligned sige heterojunction bipolar transistor |
| 05/27/2004 | US20040102915 Failure analysis vehicle |
| 05/27/2004 | US20040102053 Surface modification method |
| 05/27/2004 | US20040102052 Semiconductor device and its manufacturing method |
| 05/27/2004 | US20040102047 Semiconductor device fabrication method |
| 05/27/2004 | US20040102026 Lateral doped channel |
| 05/27/2004 | US20040102021 Method for microfabricating structures using silicon-on-insulator material |
| 05/27/2004 | US20040102012 Semiconductor device having silicide film and manufacturing method thereof |
| 05/27/2004 | US20040102010 Reliable high voltage gate dielectric layers using a dual nitridation process |
| 05/27/2004 | US20040102009 Method for removing contaminants on a substrate |
| 05/27/2004 | US20040102008 Nonvolatile semiconductor memory device and manufacturing method thereof |
| 05/27/2004 | US20040102007 Vertical floating gate transistor |
| 05/27/2004 | US20040102005 Method of manufacturing a semiconductor device |
| 05/27/2004 | US20040102002 Memory cell with tight coupling |
| 05/27/2004 | US20040101999 Manufacturing method of semiconductor device |
| 05/27/2004 | US20040101998 Variable quality semiconductor film substrate |
| 05/27/2004 | US20040101990 Flexural plate wave systems |
| 05/27/2004 | US20040101987 Method of fabrication of electronic devices using microfluidic channels |
| 05/27/2004 | US20040101625 Nitrogen passivation of interface states in SiO2/SiC structures |
| 05/27/2004 | US20040100826 Method for operating nor type flash memory device including sonos cells |
| 05/27/2004 | US20040100822 Four-bit non-volatile memory transistor and array |
| 05/27/2004 | US20040100752 Variable capacitor element and integrated circuit having variable capacitor element |
| 05/27/2004 | US20040100605 Liquid crystal display device and method of fabricating the same |
| 05/27/2004 | US20040100431 Active matrix substrate and display |
| 05/27/2004 | US20040100340 Hybrid n+ and p+ gate-doped voltage variable capacitors to improve linear tuning range in voltage controlled oscillators |
| 05/27/2004 | US20040100306 Two transistor nor device |
| 05/27/2004 | US20040100202 Light emitting device, driving method for the same and electronic apparatus |
| 05/27/2004 | US20040100172 Wire basket |
| 05/27/2004 | US20040099966 Novel field effect transistor and method of fabrication |
| 05/27/2004 | US20040099964 Use of hafnium silicon oxynitride as the cap layer of the sidewall spacer |
| 05/27/2004 | US20040099940 Semiconductor device having clips for connecting to external elements |
| 05/27/2004 | US20040099932 Thin GaAs die with copper back-metal structure |
| 05/27/2004 | US20040099929 Diodes; multilayer chips; semiconductors; gradient dope concentration |
| 05/27/2004 | US20040099926 Semiconductor device, display device, and light-emitting device, and methods of manufacturing the same |
| 05/27/2004 | US20040099923 Transistor having compensation zones enabling a low on-resistance and a high reverse voltage |
| 05/27/2004 | US20040099922 Semiconductor device including power MOSFET and peripheral device |
| 05/27/2004 | US20040099920 Apparatus for determining temperature of an active pixel imager and correcting temperature induced variations in an imager |
| 05/27/2004 | US20040099918 Electronic device substrate structure and electronic device |
| 05/27/2004 | US20040099915 Silicon nitride film, and semiconductor device and method of manufacturing the same |
| 05/27/2004 | US20040099914 Eeprom with source line voltage stabilization mechanism |
| 05/27/2004 | US20040099910 Multilayer stacks; support substrates, etching barriers, semiconductor; reduced leakage current |
| 05/27/2004 | US20040099909 Micro-electro mechanical systems (MEMS) device using silicon on insulator (SOI) wafer, and method of fabricating and grounding the same |
| 05/27/2004 | US20040099905 Power semiconductor devices having laterally extending base shielding regions that inhibit base reach-through and schottky rectifying flyback diodes |