| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/05/2006 | US20060001056 LED with substrate modifications for enhanced light extraction and method of making same |
| 01/05/2006 | US20060001055 Led and fabrication method of same |
| 01/05/2006 | US20060001054 Semiconductor processing method and field effect transistor |
| 01/05/2006 | US20060001053 Method and apparatus transporting charges in semiconductor device and semiconductor memory device |
| 01/05/2006 | US20060001052 Dual-sided capacitor and method of formation |
| 01/05/2006 | US20060001051 Thin film semiconductor circuit, manufacturing method thereof, and image display apparatus utilizing the same thin film semiconductor circuit |
| 01/05/2006 | US20060001050 High voltage FET gate structure |
| 01/05/2006 | US20060001049 Service programmable logic arrays with low tunnel barrier interpoly insulators |
| 01/05/2006 | US20060001045 Integrated circuit structures for increasing resistance to single event upset |
| 01/05/2006 | US20060001044 Method for manufacturing compound semiconductor wafer and compound semiconductor device |
| 01/05/2006 | US20060001043 CMOS image sensor and fabricating method thereof |
| 01/05/2006 | US20060001040 High integrity protective coatings |
| 01/05/2006 | US20060001039 Method of forming buried channels and microfluidic devices having the same |
| 01/05/2006 | US20060001037 Phosphor based illumination system having a plurality of light guides and a display using same |
| 01/05/2006 | US20060001035 Light emitting element and method of making same |
| 01/05/2006 | US20060001029 Diamond sensor |
| 01/05/2006 | US20060001027 Liquid crystal display device and method of fabricating the same |
| 01/05/2006 | US20060001025 Semiconductor device and method for fabricating the same |
| 01/05/2006 | US20060001024 Display device, method of production of the same, and projection type display device |
| 01/05/2006 | US20060001023 Method of manufacturing active matrix substrate with height control member |
| 01/05/2006 | US20060001022 Methods for making nearly planar dielectric films in integrated circuits |
| 01/05/2006 | US20060001021 Multiple semiconductor inks apparatus and method |
| 01/05/2006 | US20060001020 Method of forming a self-assembled molecular layer |
| 01/05/2006 | US20060001019 Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same |
| 01/05/2006 | US20060001018 III-V and II-VI compounds as template materials for growing germanium containing film on silicon |
| 01/05/2006 | US20060001017 Phase-change random access memory device and method for manufacturing the same |
| 01/05/2006 | US20060001016 Initializing phase change memories |
| 01/05/2006 | DE19621753B4 Verfahren zur Bildung eines Übergangs in Fremdionengebieten einer EEPROM-Flashzelle mittels Schrägwinkel-Fremdionen-Implantation A process for forming a transition in foreign ions areas of an EEPROM Flash cell by means of skew angle impurity ion implantation |
| 01/05/2006 | DE102005025951A1 Verfahren zum Herstellen einer Mehrschicht-Gatestapelstruktur mit einer Metallschicht und Gatestapelstruktur für eine FET-Vorrichtung A method of manufacturing a multilayer gate stack structure with a metal layer and gate stack structure for a FET device |
| 01/05/2006 | DE102004060443A1 Semiconductor device, e.g. metal oxide semiconductor field effect transistor, comprises silicon substrate, insulating film, conductive electrode, and device isolation film |
| 01/05/2006 | DE102004029435A1 Feldplattentrenchtransistor Field plate trench transistor |
| 01/05/2006 | DE102004028933A1 Verfahren zur Herstellung einer vergrabenen metallischen Schicht in einem Halbleiterkörper und Halbleiterbauelement mit einer vergrabenen metallischen Schicht A process for producing a buried metallic layer in a semiconductor body and the semiconductor component with a buried metallic layer |
| 01/05/2006 | DE102004028679A1 Isolationsgrabenanordnung Isolation grave arrangement |
| 01/05/2006 | DE102004028474A1 In SOI-Scheiben integrationsfähiges vertikales bipolares Leistungsbauelement In SOI wafers integration enabled vertical bipolar power device |
| 01/05/2006 | DE102004027691A1 Verfahren zum Herstellen eines Steges aus einem Halbleitermaterial A method of manufacturing a web made of a semiconductor material |
| 01/05/2006 | DE102004010840B4 Verfahren zum Betreiben einer elektrischen beschreib- und löschbaren nicht flüchtigen Speicherzelle und eine Speichereinrichtung zum elektrischen nicht flüchtigen Speichern A method of operating an electrical writable and erasable non-volatile memory cell and a memory device for storing nonvolatile electric |
| 01/05/2006 | DE10122928B4 Kapazitiver elektrostatischer Beschleunigungssensor, Verwendung des kapazitivenelektrostatischen Beschleunigungssensors in einem Winkelbeschleunigungssensor und in einem elektrostatischen Auslöser Electrostatic capacitive acceleration sensor using the acceleration sensor kapazitivenelektrostatischen at an angle acceleration sensor, and in an electrostatic shutter |
| 01/04/2006 | EP1612866A2 ALGaN/GaN Hemt Devices |
| 01/04/2006 | EP1612864A2 Electronic device, thin film transistor structure and flat panel display having the same |
| 01/04/2006 | EP1612861A1 Semiconductor device and its manufacturing method |
| 01/04/2006 | EP1612852A1 Thin film transistor having no grain boundary and method for fabricating the same |
| 01/04/2006 | EP1612851A1 A method for the treatment of a surface of a metal-carbide substrate for use in semiconductor manufacturing processes as well as such a metal-carbide substrate |
| 01/04/2006 | EP1611656A2 Silicon controlled rectifier electrostatic discharge protection device for power supply lines with powerdown mode of operation |
| 01/04/2006 | EP1611616A1 Bipolar transistor |
| 01/04/2006 | EP1611615A1 Method for the production of a bipolar semiconductor element, especially a bipolar transistor, and corresponding bipolar semiconductor component |
| 01/04/2006 | EP1611614A1 Improved gate electrode for semiconductor devices |
| 01/04/2006 | EP1611613A1 Semiconductor component and method for producing the same |
| 01/04/2006 | EP1611598A2 Semiconductor alignment aid |
| 01/04/2006 | EP1066416B9 Passivating etchants for metallic particles |
| 01/04/2006 | EP0890186B1 A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYERS OF SiC BY THE USE OF AN IMPLANTING STEP |
| 01/04/2006 | CN2750478Y Polydirectional LED element |
| 01/04/2006 | CN2750477Y Structure of embedded capacitor via |
| 01/04/2006 | CN1717811A Transistors having buried P-type layers beneath the source region and methods of fabricating the same |
| 01/04/2006 | CN1717810A Boron phosphide-based compound semiconductor device, production method thereof and light-emitting diode |
| 01/04/2006 | CN1717809A Transistor comprising fill areas in the source and/or drain region |
| 01/04/2006 | CN1717805A Information storage element, manufacturing method thereof, and memory array |
| 01/04/2006 | CN1717804A Semiconductor device |
| 01/04/2006 | CN1717798A Novel field effect transistor and method of fabrication |
| 01/04/2006 | CN1717794A Semiconductor device with parallel plate trench capacitor |
| 01/04/2006 | CN1717793A Method for the production of a bipolar transistor |
| 01/04/2006 | CN1717781A Process for producing semiconductor device |
| 01/04/2006 | CN1717710A Electrode wiring substrate and display device |
| 01/04/2006 | CN1716655A Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
| 01/04/2006 | CN1716640A Method for producing variable capacitor of micro electromechanical system |
| 01/04/2006 | CN1716639A Micro electro-mechanical variable capacitor |
| 01/04/2006 | CN1716638A 化合物半导体装置及其制造方法 The compound semiconductor device and manufacturing method thereof |
| 01/04/2006 | CN1716637A Thin film transistor (TFT) and flat panel display including the tft and their methods of manufacture |
| 01/04/2006 | CN1716636A Thin film transistor and method of fabricating the same |
| 01/04/2006 | CN1716635A Thin film transistor and method of fabricating the same |
| 01/04/2006 | CN1716634A 半导体器件 Semiconductor devices |
| 01/04/2006 | CN1716633A Thin film transistor and method for fabricating the same |
| 01/04/2006 | CN1716632A Double grid film electric crystal and pixel structure and its producing method |
| 01/04/2006 | CN1716631A Lateral trench mosfet |
| 01/04/2006 | CN1716630A High-frequency switching transistor |
| 01/04/2006 | CN1716629A Strained si mosfet on tensile-strained sige-on-insulator (SGOI) |
| 01/04/2006 | CN1716617A Semiconductor apparatus and manufacturing method thereof |
| 01/04/2006 | CN1716615A Nonvolatil memory device and its driving method |
| 01/04/2006 | CN1716614A Charge trapping memory device and method for making the same |
| 01/04/2006 | CN1716612A Nonvolatile semiconductor memory device having strap region and fabricating method thereof |
| 01/04/2006 | CN1716611A Nonvolatile memory device |
| 01/04/2006 | CN1716607A Semiconductor device and manufacturing method thereof |
| 01/04/2006 | CN1716606A Semiconductor device having MOS varactor and methods for fabricating the same |
| 01/04/2006 | CN1716604A MOS type semiconductor device having electrostatic discharge protection arrangement |
| 01/04/2006 | CN1716603A Electronic device, thin film transistor structure and flat panel display having the same |
| 01/04/2006 | CN1716595A Semiconductor device and manufacturing method of the same |
| 01/04/2006 | CN1716591A Semiconductor device and manufacturing method thereof |
| 01/04/2006 | CN1716586A Semiconductor device, circuit substrate, electro-optic device and electronic appliance |
| 01/04/2006 | CN1716574A Method for producing semiconductor assenbly on SOI wafer |
| 01/04/2006 | CN1716573A Method and structure for forming integrated stack capacitor |
| 01/04/2006 | CN1716572A Method of manufacturing a nonvolatile semiconductor memory device, and a nonvolatile semiconductor memory device |
| 01/04/2006 | CN1716571A Method of fabricating cmos thin film transistor (TFT) and cmos tft fabricated using the same |
| 01/04/2006 | CN1716570A Method for producing semiconductor device and its semiconductor device |
| 01/04/2006 | CN1716562A Method for manufacturing cell transistor |
| 01/04/2006 | CN1716559A Detecting structure for simultaneously detecting hot carriers of multiple metal-oxide-semiconductor device |
| 01/04/2006 | CN1716554A Structures and methods for manufacturing P-type mosfet |
| 01/04/2006 | CN1716553A Semiconductor element and its producing method |
| 01/04/2006 | CN1716552A Method of fabricating semiconductor device and semiconductor fabricated by the same method |
| 01/04/2006 | CN1716551A Method of fabricating self-aligned source and drain contacts in a double gate FET |
| 01/04/2006 | CN1716550A Metal oxide semiconductor device for high voltage operation and its producing method |
| 01/04/2006 | CN1716549A Methods of forming metal-nitride layers in contact holes and layers so formed |