| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/12/2006 | US20060006554 Vertical structure semiconductor devices with improved light output |
| 01/12/2006 | US20060006507 Silicon building block architecture with flex tape |
| 01/12/2006 | US20060006501 Semiconductor device |
| 01/12/2006 | US20060006500 III-nitride materials including low dislocation densities and methods associated with the same |
| 01/12/2006 | US20060006499 Controlling diffusion in doped semiconductor regions |
| 01/12/2006 | US20060006497 Capacitors having doped aluminum oxide dielectrics |
| 01/12/2006 | US20060006496 Interdigitaded capacitors |
| 01/12/2006 | US20060006495 Ultrathin chemically grown oxide film as a dopant diffusion barrier in semiconductor devices |
| 01/12/2006 | US20060006494 Electrically programmable polysilicon fuse with multiple level resistance and programming |
| 01/12/2006 | US20060006493 Semiconductor chip and method for manufacturing the same and semiconductor device |
| 01/12/2006 | US20060006492 Method for manufacturing non-volatile semiconductor memory device, and non-volatile semiconductor memory device |
| 01/12/2006 | US20060006491 Circuit for adjusting the operating point of multiple gate field effect transistors |
| 01/12/2006 | US20060006490 Method of fabricating a semiconductor device |
| 01/12/2006 | US20060006484 Functional material for micro-mechanical systems |
| 01/12/2006 | US20060006483 Silicon microphone |
| 01/12/2006 | US20060006481 Method and structure for reducing resistance of a semiconductor device feature |
| 01/12/2006 | US20060006480 Semiconductor integrated circuit device |
| 01/12/2006 | US20060006479 Method and apparatus for increasing stability of MOS memory cells |
| 01/12/2006 | US20060006478 Semiconductor device and manufacturing method thereof |
| 01/12/2006 | US20060006477 Semiconductor device and fabrication method thereof |
| 01/12/2006 | US20060006476 Methods for the formation of fully silicided metal gates |
| 01/12/2006 | US20060006475 Fabrication of an EEPROM cell with emitter-polysilicon source/drain regions |
| 01/12/2006 | US20060006474 Semiconductor device |
| 01/12/2006 | US20060006473 Integrated circuit hierarchical design system, integrated circuit hierarchical design program and integrated circuit hierarchical design method |
| 01/12/2006 | US20060006470 MOS field-effect transistor |
| 01/12/2006 | US20060006468 Semiconductor device |
| 01/12/2006 | US20060006465 Thin film transistor and method of fabricating the same |
| 01/12/2006 | US20060006462 Method and apparatus for a semiconductor device having low and high voltage transistors |
| 01/12/2006 | US20060006461 Drain extended MOS transistors and methods for making the same |
| 01/12/2006 | US20060006460 Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge |
| 01/12/2006 | US20060006459 Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent |
| 01/12/2006 | US20060006458 Semiconductor device and method for manufacturing the same |
| 01/12/2006 | US20060006457 Semiconductor nonvolatile memory cell array |
| 01/12/2006 | US20060006456 Memory cells and select gates of NAND memory arrays |
| 01/12/2006 | US20060006455 Memory cell with polysilicon local interconnects |
| 01/12/2006 | US20060006454 Electrically alterable memory cell |
| 01/12/2006 | US20060006453 Nonvolatile semiconductor memory device and method of fabricating the same |
| 01/12/2006 | US20060006452 EEPROM device and manufacturing method thereof |
| 01/12/2006 | US20060006451 Use of selective epitaxial silicon growth in formation of floating gates |
| 01/12/2006 | US20060006446 Method for fabricating a DRAM memory cell arrangement having fin field effect transistors and DRAM memory cell |
| 01/12/2006 | US20060006444 Selective epitaxy vertical integrated circuit components and methods |
| 01/12/2006 | US20060006439 Magnetic random access memory with multiple memory layers and improved memory cell selectivity |
| 01/12/2006 | US20060006435 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
| 01/12/2006 | US20060006434 Semiconductor device including insulated gate type transistor and insulated gate type capacitance, and method of manufacturing the same |
| 01/12/2006 | US20060006433 Electrical passivation of silicon-containing surfaces using organic layers |
| 01/12/2006 | US20060006432 Semiconductor devices, DC/DC converter and power supply |
| 01/12/2006 | US20060006431 Metal oxide semiconductor (MOS) varactor |
| 01/12/2006 | US20060006430 Submount substrate for mounting light emitting device and method of fabricating the same |
| 01/12/2006 | US20060006425 Thin film transistor substrate and its manufacture |
| 01/12/2006 | US20060006424 Light emitting apparatus and method for manufacturing the same |
| 01/12/2006 | US20060006423 Semiconductor wafer and manufacturing method thereof |
| 01/12/2006 | US20060006418 Semiconductor device having an improved voltage control oscillator circuit |
| 01/12/2006 | US20060006417 Electronic device, thin film transistor structure and flat panel display having the same |
| 01/12/2006 | US20060006416 Bipolar transistor with nonselective epitaxial base and raised extrinsic base |
| 01/12/2006 | US20060006415 Wide bandgap HEMTs with source connected field plates |
| 01/12/2006 | US20060006413 III-Nitride device passivation and method |
| 01/12/2006 | US20060006412 Semiconductor substrate, method of manufacturing the same and semiconductor device |
| 01/12/2006 | US20060006411 Method for producing a package for an electronic circuit and a substrate for a package |
| 01/12/2006 | US20060006410 Semiconductor device and method of manufacturing the same |
| 01/12/2006 | US20060006409 Power semiconductor device |
| 01/12/2006 | US20060006408 Light emitting element and method of making same |
| 01/12/2006 | US20060006407 Nitride semiconductor device and method of manufacturing the same |
| 01/12/2006 | US20060006406 Light emitting diode package and light source comprising the same |
| 01/12/2006 | US20060006405 Surface mountable light emitting diode assemblies packaged for high temperature operation |
| 01/12/2006 | US20060006404 Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices |
| 01/12/2006 | US20060006403 Optical module |
| 01/12/2006 | US20060006402 Light emitting diode having an omnidirectional reflector including a transparent conductive layer |
| 01/12/2006 | US20060006401 Flip chip light emitting diode |
| 01/12/2006 | US20060006400 Method of making diode having reflective layer |
| 01/12/2006 | US20060006399 Gallium nitride based Ill-V group compound semiconductor device and method of producing the same |
| 01/12/2006 | US20060006398 Nitride-based compound semiconductor light emitting device and fabricating method thereof |
| 01/12/2006 | US20060006396 Phosphor mixture of organge/red ZnSe0.5S0.5:Cu,Cl and green BaSrGa4S7:Eu for white phosphor-converted led |
| 01/12/2006 | US20060006395 Method for manufacturing aluminum nitride single crystal |
| 01/12/2006 | US20060006394 Silicon carbide Schottky diodes and fabrication method |
| 01/12/2006 | US20060006393 Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices |
| 01/12/2006 | US20060006392 Display device |
| 01/12/2006 | US20060006391 Image display devices |
| 01/12/2006 | US20060006390 Polysilicon structure, thin film transistor panel using the same, and manufacturing method of the same |
| 01/12/2006 | US20060006388 Method of manufacturing semiconductor device |
| 01/12/2006 | US20060006387 Semiconductor device and LTPS-TFT within and method of making the same |
| 01/12/2006 | US20060006386 Lateral semiconductor component with a drift zone having at least one field electrode |
| 01/12/2006 | US20060006385 Liquid crystal display device and method of manufacturing liquid crystal display device with color filter layer on thin film transistor |
| 01/12/2006 | US20060006383 Single and double-gate pseudo-FET devices for semiconductor materials evaluation |
| 01/12/2006 | US20060006382 Composite material |
| 01/12/2006 | US20060006381 Organic thin film transistor with polymeric interface |
| 01/12/2006 | US20060006380 Composition for forming organic insulating film and method for forming pattern of organic insulating film using the same |
| 01/12/2006 | US20060006379 Organic semiconductor copolymers containing oligothiophene and n-type heteroaromatic units |
| 01/12/2006 | US20060006378 Electrical circuit, thin film transistor, method for manufacturing electric circuit and method for manufactturing thin film transistor |
| 01/12/2006 | US20060006377 Suspended carbon nanotube field effect transistor |
| 01/12/2006 | US20060006376 Strongly textured atomic ridge nanowindows |
| 01/12/2006 | US20060006375 Light Mixing LED |
| 01/12/2006 | US20060006374 Phase-change memory device and method of manufacturing the same |
| 01/12/2006 | US20060006373 Method for manufacturing pattern formed structure |
| 01/12/2006 | US20060006366 Wave length shifting compositions for white emitting diode systems |
| 01/12/2006 | US20060006365 Derivatives of SBF and the corresponding radical anions for use in components for molecular electronics, in particular for the molecular-based computational systems, for the OLEDs and for non-linear optics |
| 01/12/2006 | US20060006070 Copper conductor |
| 01/12/2006 | US20060005629 Inertial sensor |
| 01/12/2006 | US20060005625 Acceleration sensor and method of manufacturing acceleration sensor |
| 01/12/2006 | DE19751294B4 Halbleiter-Einrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation |
| 01/12/2006 | DE19649701B4 Verfahren zum Entfernen von Kristallfehlern aufgrund von Ionenimplantation unter Verwendung einer Oxidschicht mittlerer Temperatur A method for removing crystal defects due to ion implantation using an oxide medium temperature |