| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/19/2006 | DE102004031135A1 Resistives Halbleiterelement basierend auf einem Festkörperionenleiter The resistive semiconductor element based on a solid ionic conductors |
| 01/19/2006 | DE102004030573A1 Verfahren zum Herstellen von Halbleiterelementen A method for the manufacture of semiconductor elements |
| 01/19/2006 | DE102004007410B4 Verfahren zum Herstellen einer Speicherzelle A method for fabricating a memory cell |
| 01/19/2006 | DE10131940B4 Halbleiterchip und Verfahren zur Ausbildung von Kontakten auf einer Halbleiteranordnung Semiconductor chip and method for forming contacts on a semiconductor device |
| 01/19/2006 | CA2567070A1 Silicon carbide devices and fabricating methods therefor |
| 01/18/2006 | EP1617484A1 Field effect transistor, electrical device array and method for manufacturing those |
| 01/18/2006 | EP1617483A1 Semiconductor device and process for fabricating the same |
| 01/18/2006 | EP1617477A1 Lateral bipolar cmos integrated circuit |
| 01/18/2006 | EP1617300A2 Endless belt type transferring apparatus and image forming apparatus |
| 01/18/2006 | EP1617227A2 Inertial sensor |
| 01/18/2006 | EP1616435A2 Improved imager light shield |
| 01/18/2006 | EP1616356A2 Silicon carbide mosfets with integrated antiparallel junction barrier schottky diode and methods of fabricating same |
| 01/18/2006 | EP1616355A1 Bipolar transistor and method for the production thereof |
| 01/18/2006 | EP1616347A1 Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
| 01/18/2006 | EP1616346A2 Method for producing a strained layer on a substrate and corresponding layer structure |
| 01/18/2006 | EP1374293B1 Method for the production of a mosfet with very small channel length |
| 01/18/2006 | EP1034564B1 Process for fabricating semiconductor device including antireflective etch stop layer |
| 01/18/2006 | EP1029346A4 Vertical interconnect process for silicon segments with thermally conductive epoxy preform |
| 01/18/2006 | CN1723601A Integrated half-bridge power circuit |
| 01/18/2006 | CN1723571A Controlling electromechanical behavior of structures within a microelectromechanical systems device |
| 01/18/2006 | CN1723570A Insulated gate semiconductor device and method of making the same |
| 01/18/2006 | CN1723569A Atomic device |
| 01/18/2006 | CN1723568A Solid-state circuit assembly |
| 01/18/2006 | CN1723567A Package having exposed integrated circuit device |
| 01/18/2006 | CN1723560A Semiconductor component with a bipolar lateral power transistor |
| 01/18/2006 | CN1723550A C implants for improved SiGe bipolar yield |
| 01/18/2006 | CN1723545A SiGe strain relaxed buffer for high mobility devices and a method of fabricating it |
| 01/18/2006 | CN1723482A 发光装置及其制作方法 Light-emitting device and manufacturing method thereof |
| 01/18/2006 | CN1722934A Wiring method |
| 01/18/2006 | CN1722924A Electroluminescence display device |
| 01/18/2006 | CN1722489A 2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material |
| 01/18/2006 | CN1722481A Package for semiconductor light emitting element and semiconductor light emitting device |
| 01/18/2006 | CN1722471A Semiconductor integrated circuit |
| 01/18/2006 | CN1722470A Diode with improved energy impulse rating |
| 01/18/2006 | CN1722469A Thick film chip diode and its manufacturing method |
| 01/18/2006 | CN1722468A Portable information terminal |
| 01/18/2006 | CN1722467A Low-temperature polysilicon thin film transistor and method for manufacturing its channel layer |
| 01/18/2006 | CN1722466A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/18/2006 | CN1722465A Nitride semiconductor device |
| 01/18/2006 | CN1722464A Lateral semiconductor device using trench structure and method of manufacturing the same |
| 01/18/2006 | CN1722463A Method of forming metal/high-K gate stacks with high mobility |
| 01/18/2006 | CN1722462A Phase-change memory unit combined by reversible phase-change resistance and transistor and preparing method thereof |
| 01/18/2006 | CN1722461A Semiconductor device |
| 01/18/2006 | CN1722460A Power bipolar transistor with base local heavy saturation |
| 01/18/2006 | CN1722447A Nonvolatile semiconductor memory device and method of manufacturing the same |
| 01/18/2006 | CN1722446A Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regions and split-gate non-volatile memory cells so formed |
| 01/18/2006 | CN1722442A Nonvolatile semiconductor memory device and method of manufacturing the same |
| 01/18/2006 | CN1722439A CMOS logic lock with spathic direction and its forming method |
| 01/18/2006 | CN1722437A Integrated circuit devices including a dual gate stack structure and methods of forming the same |
| 01/18/2006 | CN1722436A Semiconductor device |
| 01/18/2006 | CN1722435A Semiconductor device and manufacturing method thereof |
| 01/18/2006 | CN1722411A Semiconductor memory device and manufacturing method thereof |
| 01/18/2006 | CN1722407A Method of fabricating a semiconductor device with multiple gate oxide thicknesses |
| 01/18/2006 | CN1722390A La1-xAxMnO3 thin films and heterojunction materials grown denotatively on the silicon chip and preparing method |
| 01/18/2006 | CN1722388A Method for forming a bottom gate thin film transistor using a blend solution to form a semiconducting layer and an insulating layer |
| 01/18/2006 | CN1722387A Semiconductor devices and methods of manufacturing the same |
| 01/18/2006 | CN1722386A Mos transistor and its manufacturing method |
| 01/18/2006 | CN1722382A Nanodots formed on silicon oxide and method of manufacturing the same |
| 01/18/2006 | CN1722379A Methods of forming metal-insulator-metal (MIM) capacitors with separate seed and main dielectric layers and mim capacitors so formed |
| 01/18/2006 | CN1722369A Metal silication grid and its forming method |
| 01/18/2006 | CN1722368A Method of manufacturing a semiconductor device |
| 01/18/2006 | CN1722364A Trench structure having a void and inductor including the trench structure |
| 01/18/2006 | CN1722363A Method for manufacturing strain silicon mixing underlay and silicon mixing underlay |
| 01/18/2006 | CN1722210A Image display apparatus |
| 01/18/2006 | CN1722022A Endless belt type transferring apparatus and image forming apparatus |
| 01/18/2006 | CN1721988A Gray mask and method for manufacturing gray mask |
| 01/18/2006 | CN1721960A Gray mask and method for manufacturing gray mask |
| 01/18/2006 | CN1721959A Liquid crystal display picture element structure and manufacturing method thereof and liquid crystal display panel |
| 01/18/2006 | CN1721927A Liquid crystal display device |
| 01/18/2006 | CN1721860A Capacitive dynamic quantity sensor and semiconductor device |
| 01/18/2006 | CN1721858A 惯性传感器 Inertial sensors |
| 01/18/2006 | CN1237624C Silicon join tope diode and mfg method |
| 01/18/2006 | CN1237623C Method for forming transistor on the underlay and underlay with polyphenylenes polyimides |
| 01/18/2006 | CN1237622C Electronic device with non-luminous display |
| 01/18/2006 | CN1237621C Semiconductor device and mfg. method thereof |
| 01/18/2006 | CN1237620C Semiconductor device and mthod for mfg. same |
| 01/18/2006 | CN1237619C Semiconductor device |
| 01/18/2006 | CN1237618C Ferroelectric memory with perroelectric thin film and method of fabrication |
| 01/18/2006 | CN1237617C 静态随机存取存储器 Static random access memory |
| 01/18/2006 | CN1237616C Semiconductor device with floating grid and mfg. method thereof |
| 01/18/2006 | CN1237604C Semiconductor device |
| 01/18/2006 | CN1237601C Method for forming electric seclusion semiconductor device in first electric type silicon base |
| 01/18/2006 | CN1237599C Method for manufacturing semiconductor and semiconductor device |
| 01/18/2006 | CN1237592C Method for forming transistor in semiconductor device |
| 01/18/2006 | CN1237591C Method for mfg. semiconductor device and structure thereof |
| 01/18/2006 | CN1237590C Thin film transistors and their manufacture |
| 01/18/2006 | CN1237589C Method and device for manufacturing active matrix device containing top grid type TFT |
| 01/18/2006 | CN1237587C Epitaxial silicon mutually compensated metal oxide semiconductor on silicon germanium/insulator and its mfg. method |
| 01/18/2006 | CN1237512C Magnet head, magnetic disk device |
| 01/18/2006 | CN1237386C Manufacturing method of liquid crystal display device |
| 01/18/2006 | CN1237385C Liquid crystal display device |
| 01/18/2006 | CN1237384C array basal plate of transmitting and reflecting liquid crystal device and manufacturing method thereof |
| 01/18/2006 | CN1237382C Liquid crystal display with control electrode of preventing electric field from transverse leakage |
| 01/17/2006 | US6988058 Quantum computation with quantum dots and terahertz cavity quantum electrodynamics |
| 01/17/2006 | US6987689 Non-volatile multi-stable memory device and methods of making and using the same |
| 01/17/2006 | US6987548 Liquid crystal display device and method for manufacturing the same |
| 01/17/2006 | US6987538 Multipoint autofocus system |
| 01/17/2006 | US6987325 Bond pad rerouting element and stacked semiconductor device assemblies including the rerouting element |
| 01/17/2006 | US6987323 electroconductivity; connector comprises slit for dispersing applied stress |
| 01/17/2006 | US6987320 Pressure-welded semiconductor device |