Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2005
12/28/2005EP1609173A2 Electronic device including a self-assembled monolayer, and a method of fabricating the same
12/28/2005EP1609034A2 Chalcogenide glass constant current device, and its method of fabrication and operation
12/28/2005EP1415350A4 Gas specie electron-jump chemical energy converter
12/28/2005EP1320878B1 Process for the fabrication of mosfet depletion devices, silicided source and drain junctions
12/28/2005EP0931248B1 Temperature sensing circuits
12/28/2005CN1714457A Silicon nitrade charge trapping memory device
12/28/2005CN1714456A Radiation-emitting semiconductor device and method of manufacturing such a device
12/28/2005CN1714455A Boron phosphide-based compound semiconductor device, production method thereof and light-emitting diode
12/28/2005CN1714451A Two transistor nor device
12/28/2005CN1714449A Field effect transistor structure, associated semiconductor storage cell, and corresponding production method
12/28/2005CN1714441A Methods for forming structure and spacer and related FINFET
12/28/2005CN1714435A Self-aligned bipolar transistor without spacers and method for fabricating same
12/28/2005CN1714434A Dielectric film forming method
12/28/2005CN1714431A TFT substrate for liquid crystal display apparatus and method of manufacturing the same
12/28/2005CN1714415A Metalized film capacitor
12/28/2005CN1713409A Organic TFT and method of fabricating the same
12/28/2005CN1713407A Organic semiconductor element and manufacturing method thereof
12/28/2005CN1713401A Germanium-silicon schottky diode and its production
12/28/2005CN1713400A Spin transistor, programmable logic circuit, and magnetic memory
12/28/2005CN1713399A Semiconductor device
12/28/2005CN1713398A Thin film transistor (TFT) device structure for reducing starting voltage deviation and its manufacture
12/28/2005CN1713397A Thin film transistor and method of fabricating the same
12/28/2005CN1713396A Vertical soi device
12/28/2005CN1713395A Semiconductor device capable of threshold voltage adjustment by applying an external voltage and its manufacture
12/28/2005CN1713394A Method of forming high voltage devices with retrograde well
12/28/2005CN1713389A Nonvolatile semiconductor memory device and method of manufacturing the same
12/28/2005CN1713387A 半导体存储器件 A semiconductor memory device
12/28/2005CN1713386A Nonvolatile semiconductor memory device and method of manufacturing the same
12/28/2005CN1713384A Semiconductor device and method of manufacturing the same
12/28/2005CN1713382A 半导体装置 Semiconductor device
12/28/2005CN1713379A Semiconductor protection device
12/28/2005CN1713368A Method for fabricating semiconductor device
12/28/2005CN1713361A Method of manufacturing semiconductor device having recess channel structure
12/28/2005CN1713348A Semiconductor bare chip, method of recording id information thereon, and method of identifying the same
12/28/2005CN1713266A Display device
12/28/2005CN1713060A Thin film transistor of liquid crystal display device and fabrication method thereof
12/28/2005CN1713057A Thin film transistor array substrate and fabricating method thereof
12/28/2005CN1712351A Method for manufacturing carbon fibers and use thereof
12/28/2005CN1234175C Halo-free non-rectifying contact on chip with halo source/drain diffusion
12/28/2005CN1234174C High-voltage P-type metal oxide semiconductor transistor
12/28/2005CN1234171C Semiconductor memory and voltage application method to semiconductor memory
12/28/2005CN1234169C Potential transformation circuit without transistor junction breakdown effect
12/28/2005CN1234156C Method of forming insulating film and method of producing semiconductor device
12/28/2005CN1234155C High-frequency schottky diode electrochemical preparation method
12/28/2005CN1234153C Semiconductor device and mfg. method thereof
12/27/2005US6981236 Method for modeling semiconductor device and network
12/27/2005US6980475 Semiconductor memory device
12/27/2005US6980474 Semiconductor memory device
12/27/2005US6980472 Device and method to read a 2-transistor flash memory cell
12/27/2005US6980467 Method of forming a negative differential resistance device
12/27/2005US6980268 Reflection-transmission type liquid crystal display device and method for manufacturing the same
12/27/2005US6980044 Power element protection circuit and semiconductor device incorporating it
12/27/2005US6980043 Ferroelectric element and a ferroelectric gate device using the same
12/27/2005US6979998 Magnetic filter
12/27/2005US6979906 Solder on a sloped surface
12/27/2005US6979904 Integrated circuit package having reduced interconnects
12/27/2005US6979885 Devices with patterned wells and method for forming same
12/27/2005US6979884 Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border
12/27/2005US6979882 Heat resistance of aluminum electrodes or wires in display dvices; prevent protrusions defects by limiting carbon, nitrogen, oxide impurities; electroluminescence display device, television, computer, camera
12/27/2005US6979879 Trim zener using double poly process
12/27/2005US6979877 Solid-state device
12/27/2005US6979875 Reduced surface field technique for semiconductor devices
12/27/2005US6979874 Semiconductor device and method of manufacturing thereof
12/27/2005US6979873 Semiconductor device having multiple substrates
12/27/2005US6979872 Modules integrating MEMS devices with pre-processed electronic circuitry, and methods for fabricating such modules
12/27/2005US6979871 Semiconductor device having T-shaped gate electrode and method of manufacturing the same
12/27/2005US6979869 Substrate-biased I/O and power ESD protection circuits in deep-submicron twin-well process
12/27/2005US6979867 SOI chip with mesa isolation and recess resistant regions
12/27/2005US6979866 Semiconductor device with SOI region and bulk region and method of manufacture thereof
12/27/2005US6979865 Cellular mosfet devices and their manufacture
12/27/2005US6979864 Semiconductor device and method for fabricating such device
12/27/2005US6979863 Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
12/27/2005US6979862 Trench MOSFET superjunction structure and method to manufacture
12/27/2005US6979861 Power device having reduced reverse bias leakage current
12/27/2005US6979860 Semiconductor device and manufacturing method thereof
12/27/2005US6979859 Flash memory cell and fabrication method
12/27/2005US6979858 Semiconductor device having a gate electrode formed on a gate oxide film
12/27/2005US6979857 Apparatus and method for split gate NROM memory
12/27/2005US6979856 Semiconductor memory device and control method and manufacturing method thereof
12/27/2005US6979855 High-quality praseodymium gate dielectrics
12/27/2005US6979853 DRAM memory cell and memory cell array with fast read/write access
12/27/2005US6979852 Variable capacitance
12/27/2005US6979851 Structure and method of vertical transistor DRAM cell having a low leakage buried strap
12/27/2005US6979850 Semiconductor device capable of avoiding latchup breakdown resulting from negative varation of floating offset voltage
12/27/2005US6979849 Memory cell having improved interconnect
12/27/2005US6979846 Semiconductor device and manufacturing method thereof
12/27/2005US6979841 Semiconductor integrated circuit and fabrication method thereof
12/27/2005US6979839 Electro-optical device, method for making the same, and electronic apparatus
12/27/2005US6979835 Gallium-nitride based light-emitting diode epitaxial structure
12/27/2005US6979658 Method of fabricating a semiconductor device containing nitrogen in a gate oxide film
12/27/2005US6979657 Method for forming a dielectric layer in a semiconductor device
12/27/2005US6979635 Method of forming miniaturized polycrystalline silicon gate electrodes using selective oxidation
12/27/2005US6979634 Manufacturing method for semiconductor device having a T-type gate electrode
12/27/2005US6979629 Method and apparatus for processing composite member
12/27/2005US6979627 Isolation trench
12/27/2005US6979626 Method for fabricating a self-aligned bipolar transistor having increased manufacturability and related structure
12/27/2005US6979623 Method for fabricating split gate transistor device having high-k dielectrics
12/27/2005US6979622 Semiconductor transistor having structural elements of differing materials and method of formation
12/27/2005US6979621 Trench MOSFET having low gate charge
12/27/2005US6979618 Method of manufacturing NAND flash device