Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2005
12/15/2005US20050275006 [multi-gate dram with deep-trench capacitor and fabrication thereof]
12/15/2005US20050275005 Metal-insulator-metal (MIM) capacitor and method of fabricating the same
12/15/2005US20050275004 Semiconductor integrated circuit, booster circuitry, and non-volatile semiconductor memory device
12/15/2005US20050275002 Vertical split gate memory cell and manufacturing method thereof
12/15/2005US20050274994 High dielectric constant spacer for imagers
12/15/2005US20050274992 Method of fabricating a tunneling nanotube field effect transistor
12/15/2005US20050274990 Whole chip ESD protection
12/15/2005US20050274986 Solution processed devices
12/15/2005US20050274985 RF decoupled field plate for FETs
12/15/2005US20050274982 Electronic unit with a substrate where an electronic circuit is fabricated
12/15/2005US20050274980 Semiconductor multilayer structure, semiconductor device and HEMT device
12/15/2005US20050274979 Compound semiconductor device and manufacturing method thereof
12/15/2005US20050274978 Single metal gate material CMOS using strained si-silicon germanium heterojunction layered substrate
12/15/2005US20050274977 Nitride semiconductor device
12/15/2005US20050274975 III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer
12/15/2005US20050274974 Zener diode and method for fabricating the same
12/15/2005US20050274973 LED lamp
12/15/2005US20050274971 Light emitting diode and method of making the same
12/15/2005US20050274968 Lens structures suitable for use in image sensors and method for making the same
12/15/2005US20050274965 Sterilizing method, system, and device utilizing ultraviolet light emitting diodes powered by direct current or solar power in a recreational vehicle or marine environment
12/15/2005US20050274964 Light emitting diode structure
12/15/2005US20050274963 Semiconductor protection device
12/15/2005US20050274962 Optical semiconductor apparatus
12/15/2005US20050274961 Organic electroluminescent device and manufacuring method thereof
12/15/2005US20050274956 LED chip with integrated fast switching diode for ESD protection
12/15/2005US20050274954 Organic thin film transistor
12/15/2005US20050274953 Organic thin film transistor array panel and manufacturing method thereof
12/15/2005US20050274952 Semiconductor device and manufacturing method thereof
12/15/2005US20050274951 MOSFET having channel in bulk semiconductor and source/drain on insulator, and method of fabrication
12/15/2005US20050274950 Active matrix type display device and method of manufacturing the same
12/15/2005US20050274948 Semiconductor device and method for manufacturing therefor
12/15/2005US20050274947 Structure of TFT electrode for preventing metal layer diffusion and manufacturing method therefor
12/15/2005US20050274946 Conducting luminescent organic compounds
12/15/2005US20050274942 Nanoscale programmable structures and methods of forming and using same
12/15/2005US20050274941 Semiconductor quantum well devices and methods of making the same
12/15/2005US20050274191 Piezo resistance type semiconductor device and its manufacturing method
12/15/2005DE19859090B4 Verfahren zum Herstellen von Gateoxiden mit verschiedenen Dicken A process for the manufacture of gate oxides having different thicknesses
12/15/2005DE19857356B4 Heteroübergangs-Bipolartransistor A heterojunction bipolar transistor
12/15/2005DE19539178B4 Halbleiterbeschleunigungssensor und Verfahren zu seiner Herstellung A semiconductor acceleration sensor and method for its preparation
12/15/2005DE102005022575A1 Non-volatile semiconductor memory e.g. flash memory, has floating gate whose two side surfaces are wave-shaped along lengthwise of channel region formed between source and floating junction regions
12/15/2005DE102005022306A1 Manufacture of semiconductor device comprises providing semiconductor substrate, forming mask layer over cell area and peripheral circuit area of substrate, and forming gates
12/15/2005DE102005021249A1 Halbleitervorrichtung Semiconductor device
12/15/2005DE102005005327A1 Feldefekttansistor, Transistoranordnung sowie Verfahren zur Herstellung eines halbleitenden einkristallinen Substrats und einer Transistoranordnung Feldefekttansistor, transistor arrangement and method of manufacturing a semiconductive single crystalline substrate and a transistor arrangement
12/15/2005DE102005004401A1 Korrosionshemmende Reinigungszusammensetzungen für Metallschichten und Muster an Halbleitersubstraten The corrosion inhibiting compositions for cleaning metal layers and patterns on semiconductor substrates
12/15/2005DE102004063139A1 Verfahren zur Herstellung einer Split-Gate-Flash-Speichereinrichtung A process for producing a split-gate flash memory device
12/15/2005DE102004061575A1 Semiconductor device for electric power module, has metal layer connected to bonding wire, which is provided at front surface of substrate, so that metal layer overlaps capacitor
12/15/2005DE102004025082A1 Elektrisch und durch Strahlung zündbarer Thyristor und Verfahren zu dessen Kontaktierung And electrically ignitable thyristor by radiation and method of contacting
12/15/2005DE102004024923A1 Manufacturing method for overvoltage protection device used in communication system, involves forming emitter region on base region, and forming electrode region on emitter region
12/15/2005DE102004024887A1 Transistor e.g. double diffusion MOS, has cell array with two active transistor cells separated by pitch, in which temperature sensor and transistor cell are located in close distance
12/15/2005DE102004024665A1 Verfahren zum Herstellen von dielektrischen Mischschichten und kapazitives Element und Verwendung derselben The method for producing dielectric layers and mixing capacitive element and using the same
12/15/2005DE102004024661A1 Trench transistor manufacturing method, by back-forming layer in upper trench region, and semiconductor material on side walls of trench before forming new semiconductor material on side walls
12/15/2005DE102004024660A1 Integrated semiconductor device, has active trenches and spacing of directly adjacent contact trenches larger than half width of contact trenches
12/15/2005DE102004024659A1 Halbleiterbauteil Semiconductor device
12/15/2005DE102004024368A1 Beleuchtbares GaAs-Schaltbauteil mit transparentem Gehäuse und Mikrowellenschaltung hiermit Illuminated GaAs switching device with transparent housing and microwave circuit hereby
12/15/2005DE102004023405A1 Dicing ultra-thin wafer in to multiple integrated circuits, by fixing carrier wafer to front of product wafer, forming separating trenches between integrated circuits
12/15/2005DE102004023301A1 Bridge field effect transistor memory cell has charge storage layer designed for selective charge carrier introduction or removal by application of given electrical potential
12/15/2005DE102004023193A1 Transistoranordnung und Herstellungsverfahren derselben Transistor device and manufacturing method thereof
12/15/2005DE10085054B4 Trench-IGBT Trench IGBT
12/15/2005DE10023116B4 Feldeffekttransistor-Struktur mit isoliertem Gate Field effect transistor structure insulated gate
12/15/2005CA2568503A1 Method and device using ccd-based low noise parametric amplifier
12/15/2005CA2567066A1 Methods of fabricating nitride-based transistors having regrown ohmic contact regions and nitride-based transistors having regrown ohmic contact regions
12/14/2005EP1605518A2 Zener diode and method for fabricating the same
12/14/2005EP1605517A2 Insulating barrier
12/14/2005EP1605504A1 Method for manufacturing a SOI wafer
12/14/2005EP1605501A1 Asymmetric channel doped MOS structure and method
12/14/2005EP1605500A1 Semiconductor device and method for manufacturing semiconductor device
12/14/2005EP1605430A1 Organic el display and active matrix substrate
12/14/2005EP1605076A2 Method for preventing contamination during the fabrication of a semiconductor device
12/14/2005EP1604406A1 Transistor for active matrix display and a method for producing said transistor
12/14/2005EP1604405A1 A method for making a semiconductor device having a high-k gate dielectric
12/14/2005EP1604404A1 Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure
12/14/2005EP1604398A2 Magnetic memory cell junction and method for forming a magnetic memory cell junction
12/14/2005EP1604397A2 Shallow trench isolation in processes with strained silicon
12/14/2005EP1604396A2 Two-step post nitridation annealing for lower eot plasma nitrided gate dielectrics
12/14/2005EP1604392A1 Semiconductor mos, cmos devices and capacitors and method of manufacturing the same
12/14/2005EP1603431A2 Reading stand
12/14/2005EP1532659A4 Fin fet devices from bulk semiconductor and method for forming
12/14/2005EP1145281B1 Modelling electrical characteristics of thin film transistors
12/14/2005EP1145023B1 Semiconductor device simulation method and simulator
12/14/2005EP0890190B1 Corrosion resistant imager
12/14/2005CN1708864A Field effect transistor and method for production thereof
12/14/2005CN1708861A Floating gate transistors
12/14/2005CN1708860A Organic semiconductor device
12/14/2005CN1708859A MOS transistor on an SOI substrate with a source through-connection
12/14/2005CN1708858A Double and triple gate mosfet devices and methods for making same
12/14/2005CN1708857A Semiconductor component and method of manufacture
12/14/2005CN1708856A Thin film transistors and methods of manufacture thereof
12/14/2005CN1708855A Semiconductor device having a U-shaped gate structure
12/14/2005CN1708854A Arrangement for reducing current density in a transistor in an IC
12/14/2005CN1708853A Semiconductor device and manufacturing method thereof
12/14/2005CN1708852A Semiconductor device and manufacturing method thereof
12/14/2005CN1708850A Chip-scale schottky device
12/14/2005CN1708847A Method for producing a transistor structure
12/14/2005CN1708105A Imaging apparatus and device
12/14/2005CN1707890A Nitride semiconductor light-emitting device
12/14/2005CN1707888A Semiconductor laser, its manufacturing method, and manufacturing method of electron device
12/14/2005CN1707826A Light-emitting diode
12/14/2005CN1707825A Semiconductor light emitting device ,producing method thereof and semiconductor light emitting unit
12/14/2005CN1707813A MOS capacitor with reduced parasitic capacitance
12/14/2005CN1707812A Thin film transistor (TFT) and flat display panel having the thin film transistor (TFT)
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