| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/31/2006 | US6992350 High voltage power MOSFET having low on-resistance |
| 01/31/2006 | US6992349 Rail stack array of charge storage devices and method of making same |
| 01/31/2006 | US6992348 Semiconductor memory with vertical charge-trapping memory cells and fabrication |
| 01/31/2006 | US6992347 Semiconductor storage device |
| 01/31/2006 | US6992343 Semiconductor memory device |
| 01/31/2006 | US6992342 Magnetic memory device having a non-volatile magnetic section and manufacturing thereof |
| 01/31/2006 | US6992340 Semiconductor device |
| 01/31/2006 | US6992339 Asymmetric memory cell |
| 01/31/2006 | US6992337 Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP) heterojunction bipolar transistor (HBT) having reduced tunneling probability |
| 01/31/2006 | US6992336 Front substrate of plasma display panel and fabrication method thereof |
| 01/31/2006 | US6992328 Semiconductor device and manufacturing method thereof |
| 01/31/2006 | US6992320 Semiconductor optical device with quantum dots having internal tensile or compressive strain |
| 01/31/2006 | US6992319 Ultra-linear multi-channel field effect transistor |
| 01/31/2006 | US6992318 Semiconductor device having superlattice semiconductor layer and method of manufacturing the same |
| 01/31/2006 | US6992317 Full color display structures using pseudomorphic cladded quantum dot nanophosphor thin films |
| 01/31/2006 | US6992298 Coated spherical silicon nanoparticle thin film UV detector with UV response and method of making |
| 01/31/2006 | US6992020 Method of fabricating semiconductor device |
| 01/31/2006 | US6992016 Chemical processing method, and method of manufacturing semiconductor device |
| 01/31/2006 | US6992010 Gate structure and method of manufacture |
| 01/31/2006 | US6992008 Method of making a substrate having buried structure and method for fabricating a display device including the substrate |
| 01/31/2006 | US6992005 Semiconductor device and method of manufacturing the same |
| 01/31/2006 | US6991999 Bi-layer silicon film and method of fabrication |
| 01/31/2006 | US6991997 Semiconductor film, semiconductor device and method for manufacturing same |
| 01/31/2006 | US6991996 Manufacturing method of semiconductor device and semiconductor chip using SOI substrate, facilitating cleaving |
| 01/31/2006 | US6991991 Method for preventing to form a spacer undercut in SEG pre-clean process |
| 01/31/2006 | US6991990 Method for forming a field effect transistor having a high-k gate dielectric |
| 01/31/2006 | US6991989 Process of forming high-k gate dielectric layer for metal oxide semiconductor transistor |
| 01/31/2006 | US6991988 Static pass transistor logic with transistors with multiple vertical gates |
| 01/31/2006 | US6991986 Nonvolatile memory devices and methods of fabricating the same |
| 01/31/2006 | US6991985 Method of manufacturing a semiconductor device |
| 01/31/2006 | US6991984 Method for forming a memory structure using a modified surface topography and structure thereof |
| 01/31/2006 | US6991983 Method of manufacturing high voltage transistor in flash memory device |
| 01/31/2006 | US6991982 Method of manufacturing a semiconductor non-volatile memory |
| 01/31/2006 | US6991979 Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETs |
| 01/31/2006 | US6991978 World line structure with single-sided partially recessed gate structure |
| 01/31/2006 | US6991977 Method for forming a semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
| 01/31/2006 | US6991974 Method for fabricating a low temperature polysilicon thin film transistor |
| 01/31/2006 | US6991973 Manufacturing method of thin film transistor |
| 01/31/2006 | US6991972 Gate material for semiconductor device fabrication |
| 01/31/2006 | US6990864 Semiconductor dynamic quantity sensor |
| 01/26/2006 | WO2006010055A2 Drain extended mos transistors and methods for making the same |
| 01/26/2006 | WO2006009895A2 Gate bias circuit mos charge coupled devices |
| 01/26/2006 | WO2006009850A2 Semiconductor assembly having substrate with electroplated contact pads |
| 01/26/2006 | WO2006009783A2 Low dielectric constant zinc oxide |
| 01/26/2006 | WO2006009782A2 Persistent p-type group ii-vi semiconductors |
| 01/26/2006 | WO2006009781A2 Dynamic p-n junction growth |
| 01/26/2006 | WO2006009025A1 Semiconductor device and semiconductor device manufacturing method |
| 01/26/2006 | WO2006008925A1 Iii-v hemt devices |
| 01/26/2006 | WO2006008888A1 Insulated gate bipolar transistor |
| 01/26/2006 | WO2006008703A2 Nanoscale fet |
| 01/26/2006 | WO2006008689A1 Bipolar transistor and method of manufacturing the same |
| 01/26/2006 | WO2006008356A1 Integrated circuit comprising a capacitor with metal electrodes, and method of producing one such capacitor |
| 01/26/2006 | WO2005074025A3 Self-aligned trench mos junctions field-effect transistor for high-frequency applications |
| 01/26/2006 | WO2005024909A3 Fabrication of single or multiple gate field plates |
| 01/26/2006 | WO2005017962A3 System and process for producing nanowire composites and electronic substrates therefrom |
| 01/26/2006 | WO2004081987A3 Sige rectification process |
| 01/26/2006 | US20060019475 Method of depositing polysilicon |
| 01/26/2006 | US20060019459 Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals localised with precision |
| 01/26/2006 | US20060019454 Method for making a semiconductor device comprising a superlattice dielectric interface layer |
| 01/26/2006 | US20060019453 NROM flash memory with a high-permittivity gate dielectric |
| 01/26/2006 | US20060019448 Termination for trench MIS device having implanted drain-drift region |
| 01/26/2006 | US20060019445 Non-volatile memory and manufacturing method thereof |
| 01/26/2006 | US20060019442 Method of forming a capacitor |
| 01/26/2006 | US20060019440 Semiconductor constructions |
| 01/26/2006 | US20060019435 Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
| 01/26/2006 | US20060019424 Image sensor fabrication method and structure |
| 01/26/2006 | US20060019201 Post-dry etching cleaning liquid composition and process for fabricating semiconductor device |
| 01/26/2006 | US20060018812 Air conditioner devices including pin-ring electrode configurations with driver electrode |
| 01/26/2006 | US20060018232 Device to store and read a data bit in a phase change alloy material |
| 01/26/2006 | US20060018181 Nonvolatile semiconductor memory |
| 01/26/2006 | US20060018172 Semiconductor integrated circuit device |
| 01/26/2006 | US20060018164 Nor-type channel-program channel-erase contactless flash memory on SOI |
| 01/26/2006 | US20060017873 Liquid crystal display and method for manufacturing the same |
| 01/26/2006 | US20060017625 Communication terminal |
| 01/26/2006 | US20060017380 Light-emitting device and method of manufacturing the same |
| 01/26/2006 | US20060017165 Semiconductor device and manufacturing method thereof |
| 01/26/2006 | US20060017137 Semiconductor device and its manufacturing method |
| 01/26/2006 | US20060017136 Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the same |
| 01/26/2006 | US20060017135 Layout method of decoupling capacitors |
| 01/26/2006 | US20060017134 Input protection circuit preventing electrostatic discharge damage of semiconductor integrated circuit |
| 01/26/2006 | US20060017133 Electronic part-containing elements, electronic devices and production methods |
| 01/26/2006 | US20060017132 Method for producing a dielectric and semiconductor structure |
| 01/26/2006 | US20060017131 Process for manufacturing an SOI wafer by annealing and oxidation of buried channels |
| 01/26/2006 | US20060017130 Fast recovery diode with a single large area P/N junction |
| 01/26/2006 | US20060017129 Avalanche photodiode |
| 01/26/2006 | US20060017125 Vibration type MEMS switch and fabricating method thereof |
| 01/26/2006 | US20060017124 Bistable magnetic device using soft magnetic intermediary material |
| 01/26/2006 | US20060017123 Field imager |
| 01/26/2006 | US20060017122 Novel metal-gate electrode for CMOS transistor applications |
| 01/26/2006 | US20060017121 Nonvolatile semiconductor memory device and method for fabricating the same |
| 01/26/2006 | US20060017120 Semiconductor-ferroelectric storage device and its manufacturing method |
| 01/26/2006 | US20060017119 Multi-gate transistor and method of fabricating multi-gate transistor |
| 01/26/2006 | US20060017118 Semiconductor device having spacer pattern and method of forming the same |
| 01/26/2006 | US20060017117 Semiconductor device and method for fabricating the same |
| 01/26/2006 | US20060017116 Semiconductor device and method for manufacturing the same |
| 01/26/2006 | US20060017115 One-transistor random access memory technology compatible with metal gate process |
| 01/26/2006 | US20060017114 Method for fabricating integrated circuits having both high voltage and low voltage devices |
| 01/26/2006 | US20060017113 High transconductance and drive current high voltage MOS transistors |
| 01/26/2006 | US20060017112 Semiconductor device with high-k gate dielectric and quasi-metal gate, and method of forming thereof |
| 01/26/2006 | US20060017111 Semiconductor device and method of fabricating the same |