Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2005
12/29/2005US20050285182 Memory cell, memory cell arrangement and method for the production of a memory cell
12/29/2005US20050285181 Non-volatil semiconductor memory device and writing method thereof
12/29/2005US20050285180 Nonvolatile semiconductor memory device and method of manufacturing the same
12/29/2005US20050285179 Isolation trenches for memory devices
12/29/2005US20050285178 Formation of memory cells and select gates of NAND memory arrays
12/29/2005US20050285177 Vertical memory cell and manufacturing method thereof
12/29/2005US20050285175 Vertical SOI Device
12/29/2005US20050285174 Stacked semiconductor memory device
12/29/2005US20050285173 Semiconductor device and method for fabricating the same
12/29/2005US20050285172 Methods of forming vias in multilayer substrates
12/29/2005US20050285171 Ferroelectric material and ferroelectric memory device made therefrom
12/29/2005US20050285170 Semiconductor device and method for fabricating the same
12/29/2005US20050285169 Memory array having a layer with electrical conductivity anisotropy
12/29/2005US20050285168 Techniques for reducing neel coupling in toggle switching semiconductor devices
12/29/2005US20050285162 Semiconductor devices having a stacked structure and methods of forming the same
12/29/2005US20050285161 Method of fabricating multi-gate transistor and multi-gate transistor fabricated thereby
12/29/2005US20050285160 Methods for forming semiconductor wires and resulting devices
12/29/2005US20050285159 Compressive SiGe <110> growth and structure of MOSFET devices
12/29/2005US20050285158 Single-chip common-drain JFET device and its applications
12/29/2005US20050285157 Distributed high voltage JFET
12/29/2005US20050285156 Organic compound crystal and field-effect transistor
12/29/2005US20050285153 Transistor, memory cell array and method of manufacturing a transistor
12/29/2005US20050285151 Active matrix type display apparatus and a driving device of a load
12/29/2005US20050285150 Field effect transistor, transistor arrangement and method for producing a semiconducting monocrystalline substrate and a transistor arrangement
12/29/2005US20050285149 Methods for forming semiconductor wires and resulting devices
12/29/2005US20050285148 Memory with polysilicon local interconnects
12/29/2005US20050285147 Circuit apparatus and method of manufacturing the same
12/29/2005US20050285146 Semiconductor device, manufacturing method of the semiconductor device, and design method of the semiconductor device
12/29/2005US20050285145 Web image transfer system using LED based lighting systems
12/29/2005US20050285144 Field effect transistor, compound semiconductor substrate and process for forming a recess therein
12/29/2005US20050285142 Gallium nitride materials and methods associated with the same
12/29/2005US20050285141 Gallium nitride materials and methods associated with the same
12/29/2005US20050285140 Isolation structure for strained channel transistors
12/29/2005US20050285138 Persistent p-type group II-VI semiconductors
12/29/2005US20050285137 Semiconductor device with strain
12/29/2005US20050285134 Flat panel display and protection device therefor
12/29/2005US20050285133 Light emitting diode package
12/29/2005US20050285132 Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element
12/29/2005US20050285129 Instrument excitation source and calibration method
12/29/2005US20050285128 Surface plasmon light emitter structure and method of manufacture
12/29/2005US20050285126 LED fabrication via ion implant isolation
12/29/2005US20050285125 Nitride based semiconductor device
12/29/2005US20050285124 Micro or below scale multi-layered heteostructure
12/29/2005US20050285123 Photodiode array and optical receiver device including the same
12/29/2005US20050285122 Light emitting display and fabrication method thereof
12/29/2005US20050285120 Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor without directional dependency on active channels fabricated using the same
12/29/2005US20050285119 Dynamic p-n junction growth
12/29/2005US20050285118 Switching circuit using multiple common-drain JFETs for good heat dissipation capability and small PCB layout area
12/29/2005US20050285117 Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates
12/29/2005US20050285116 Electronic assembly with carbon nanotube contact formations or interconnections
12/29/2005US20050285115 Photonic three-dimensional structure and method for production thereof
12/29/2005US20050285114 Electroluminescence display device and method of manufacturing the same
12/29/2005US20050285113 Display device
12/29/2005US20050285112 Thin film transistor and method for fabricating the same
12/29/2005US20050285111 Semiconductor apparatus and manufacturing method thereof
12/29/2005US20050285110 Thin film transistor and method of fabricating the same
12/29/2005US20050285109 Novel conductive elements for thin film transistors used in a flat panel display
12/29/2005US20050285108 Pixel circuit and display device having improved transistor structure
12/29/2005US20050285105 Pressure inspector and method for inspecting liquid crystal display panels
12/29/2005US20050285104 Apparatus and method of removing particles
12/29/2005US20050285103 Methods of forming semiconductor constructions comprising cerium oxide and titanium oxide
12/29/2005US20050285102 Organic TFT and method of fabricating the same
12/29/2005US20050285101 Formation of ordered thin films of organics on metal oxide surfaces
12/29/2005US20050285100 Organic light emitting display and method of fabricating the same
12/29/2005US20050285099 OFET structures with both n- and p-type channels
12/29/2005US20050285098 Ultra-linear multi-channel field effect transistor
12/29/2005US20050285097 Integration of strained Ge into advanced CMOS technology
12/29/2005US20050285096 Programmable structure, an array including the structure, and methods of forming the same
12/29/2005US20050285095 Resistive semiconductor element based on a solid-state ion conductor
12/29/2005US20050285094 Phase-Changeable Memory Devices
12/29/2005US20050285093 Magnetic storage device using ferromagnetic tunnel junction element
12/29/2005US20050285009 Reading stand
12/29/2005DE19939092B4 Speicherbereich eines EEPROM sowie bereichsspezifische Programmier- und Löschverfahren Memory area of ​​the EEPROM and domain-specific programming and erasing method
12/29/2005DE19640311B4 Halbleiterbauelement mit Lateralwiderstand und Verfahren zu dessen Herstellung A semiconductor device comprising lateral resistor and method of manufacture
12/29/2005DE112004000218T5 Graben-MOSFET Technologie für DC/DC Wandleranwendungen Trench MOSFET technology for DC / DC Converter Applications
12/29/2005DE10393309T5 Nitrid- und Polysiliziumgrenzschicht mit Titanschicht Nitride and polysilicon boundary layer with titanium layer
12/29/2005DE10255936B4 Verfahren zur Herstellung einer Isolationsschicht und Verfahren zum Steuern einer Stickstoffkonzentration während der Herstellung der Isolationsschicht A process for producing an insulating layer and method for controlling a nitrogen concentration during the production of the insulation layer
12/29/2005DE10250609B4 Thyristorbauelement mit verbessertem Sperrverhalten in Rückwärtsrichtung Thyristor device with improved locking behavior in the reverse direction
12/29/2005DE10239868B4 Verfahren zur Erzeugung von tiefen dotierten Säulenstrukturen in Halbleiterwafern und hierdurch hergestellte Trench-Transistoranordnung A process for the production of deep doped columnar structures in semiconductor wafers, and thereby trench transistor device manufactured
12/29/2005DE102005024630A1 Dynamikgrössenhalbleitersensor Dynamic size semiconductor sensor
12/29/2005DE102005021803A1 Capacitor structure used in an electrical insulator comprises an insulating layer containing praseodymium oxide mixed with titanium or titanium nitride arranged between a first electrode and a second electrode
12/29/2005DE102004021052B3 Verfahren zur Herstellung von Trench-DRAM-Speicherzellen und Trench-DRAM-Speicherzellenfeld mit Stegfeldeffekttransistoren mit gekrümmtem Kanal (CFET) Process for the preparation of trench DRAM memory cells and trench DRAM memory cell array having fin field-effect transistors with a curved channel (CFET)
12/29/2005DE102004005951B4 Verfahren zur Herstellung von vertikal isolierten Bauelementen auf SOI-Material unterschiedlicher Dicke Process for preparing vertical insulated components on SOI material of different thickness
12/29/2005DE10034004B4 Nicht-flüchtige Halbleiter-Speicherzelle mit verbesserten Programmiereigenschaften sowie zugehöriges Herstellungsverfahren The non-volatile semiconductor memory cell with improved programming characteristics and associated production method
12/28/2005EP1610395A2 Semiconductor device comprising a field-effect transistor
12/28/2005EP1610394A1 Semiconductor device, process for producing the same and process for producing metal compound thin film
12/28/2005EP1610393A1 Semiconductor device and method for manufacturing same
12/28/2005EP1610392A2 HEMT device
12/28/2005EP1610391A2 Spin transistor, programmable logic circuit, and magnetic memory
12/28/2005EP1610390A2 Semiconductor device with diagonal gate signal distribution runner
12/28/2005EP1610386A1 Tunnel transistor having spin-dependent transfer characteristic and nonvolatile memory using same
12/28/2005EP1610384A2 Electronic unit with a substrate where an electronic circuit is fabricated
12/28/2005EP1610376A1 Semiconductor device
12/28/2005EP1610372A2 Fabrication method of a self aligned contact in a semiconductor device
12/28/2005EP1610370A2 Semiconductor device, and fabrication method of semiconductor device
12/28/2005EP1610338A1 Steering gate and bit line segmentation in non-volatile memories
12/28/2005EP1610121A1 p CHANNEL FILED EFFECT TRANSISTOR AND SENSOR USING THE SAME
12/28/2005EP1609193A2 Field-effect electrodes for organic, optoelectronic components
12/28/2005EP1609187A2 Mram architecture and a method and system for fabricating mram memories utilizing the architecture
12/28/2005EP1609178A2 Gate electrode for mos transistors
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