Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2006
01/26/2006US20060017110 Semiconductor device with low resistance contacts
01/26/2006US20060017107 Metal gate engineering for surface p-channel devices
01/26/2006US20060017104 Semiconductor device having a channel pattern and method of manufacturing the same
01/26/2006US20060017103 Method for making reduced size DMOS transistor and resulting DMOS transistor
01/26/2006US20060017102 LDMOS device and method of fabrication
01/26/2006US20060017101 Semiconductor integrated circuit and manufacturing method of the same
01/26/2006US20060017100 Dynamic deep depletion field effect transistor
01/26/2006US20060017099 MOS transistor having a recessed gate electrode and fabrication method thereof
01/26/2006US20060017098 Semiconductor device with a high-k gate dielectric and a metal gate electrode
01/26/2006US20060017097 Method of manufacturing a trench-gate semiconductor device
01/26/2006US20060017095 Carburized silicon gate insulators for integrated circuits
01/26/2006US20060017094 Non-volatile memory devices with improved insulation layers and methods of manufacturing such devices
01/26/2006US20060017093 Semiconductor devices with overlapping gate electrodes and methods of fabricating the same
01/26/2006US20060017091 Method and apparatus for nonvolatile memory
01/26/2006US20060017090 Semiconductor device and method of manufacturing the same
01/26/2006US20060017089 Method and apparatus for providing capacitor feedthrough
01/26/2006US20060017087 Semiconductor device and method of manufacturing the same utilizing permittivity of an insulating layer to provide a desired cross conductive layer capacitance property
01/26/2006US20060017086 Semiconductor device and method for manufacturing the same
01/26/2006US20060017085 NAND flash memory with densely packed memory gates and fabrication process
01/26/2006US20060017084 Integrated semiconductor metal-insulator-semiconductor capacitor
01/26/2006US20060017083 Multi-state magnetoresistance random access cell with improved memory storage density
01/26/2006US20060017082 Magnetic random access memory having magnetoresistive element
01/26/2006US20060017081 Magnetic tunnel junction element structures and methods for fabricating the same
01/26/2006US20060017080 Field-effect transistor
01/26/2006US20060017079 N-type transistor with antimony-doped ultra shallow source and drain
01/26/2006US20060017078 ACCUFET with Schottky source contact
01/26/2006US20060017077 Semiconductor device having switch circuit to supply voltage
01/26/2006US20060017076 Electric device with phase change material and metod of manufacturing the same
01/26/2006US20060017075 Image sensor production method and image sensor
01/26/2006US20060017073 Semiconductor device and method of fabricating the same
01/26/2006US20060017072 CMOS active pixel sensor with improved dark current and sensitivity
01/26/2006US20060017071 Semiconductor integrated circuit
01/26/2006US20060017070 Semiconductor device
01/26/2006US20060017066 Methods of base formation in a BiCMOS process
01/26/2006US20060017064 Nitride-based transistors having laterally grown active region and methods of fabricating same
01/26/2006US20060017063 Metamorphic buffer on small lattice constant substrates
01/26/2006US20060017062 Semiconductor optical device
01/26/2006US20060017057 Device structure to improve OLED reliability
01/26/2006US20060017054 Liquid crystal display device and fabricating method thereof
01/26/2006US20060017053 Semiconductor device and a method of manufacturing the same, integrated circuit, electro-optical device, and electronic apparatus
01/26/2006US20060017052 Method of fabricating semiconductor device and semiconductor fabricated by the same method
01/26/2006US20060017050 Light-emitting device
01/26/2006US20060016516 applying a magnetic field a solution of ferromagnetic molecular frame components to assemble a ferromagnetic frame andintroducing monomers that self-assemble within the ferromagnetic frame to form a well-organized, anisotropic polymers
01/26/2006DE112004000254T5 Verbessertes Funktionsverhalten in Flash-Speichereinrichtungen Improved functional behavior in flash memory devices
01/26/2006DE10239580B4 Verfahren zum Ausbilden eines Kompensationsgebiets und Verwendung des Verfahrens zur Herstellung eines Kompensationshalbleiterbauelements A method of forming a compensation area and using the method for producing a compensation semiconductor component
01/26/2006DE102005029266A1 Dünnschichttrasistor eines Flüssigkristalldisplays sowie zugehöriges Herstellungsverfahren Dünnschichttrasistor a liquid crystal display and manufacturing method thereof
01/26/2006DE102005028935A1 Bauelement mit variabler Kapazität, welches eine hohe Genauigkeit aufweist Component with variable capacity, which has a high accuracy
01/26/2006DE102004032917A1 Schichtanordnung und Verfahren zum Herstellen einer Schichtanordnung Layer arrangement and method for producing a layer arrangement
01/26/2006DE102004026100A1 ESD-Schutzstrukturen für Halbleiterbauelemente ESD protection structures for semiconductor devices
01/26/2006DE102004006505B4 Charge-Trapping-Speicherzelle und Herstellungsverfahren Charge-trapping memory cell, and manufacturing method
01/26/2006DE10008683B4 Halbleitervorrichtung und zugehöriges Herstellungsverfahren A semiconductor device and manufacturing method thereof
01/25/2006EP1619725A2 Thin film semiconductor device and method of manufacturing the same, electro-optical device, and electronic apparatus
01/25/2006EP1619724A1 Gate turn-off thyristor
01/25/2006EP1619693A1 Electrode material and semiconductor device
01/25/2006EP1619277A2 Process for making a structure having at least one precisely positioned zone of one or several semiconductor nanocrystals
01/25/2006EP1618611A1 Method for production of a semiconductor device with auto-aligned metallisations
01/25/2006EP1618609A1 Programmable semiconductor device
01/25/2006EP1618607A2 Semiconductor device comprising a field-effect transistor and method of operating the same
01/25/2006EP1618605A1 Lead free alloys for column/ball grid arrays, organic interposers and passive component assembly
01/25/2006EP1618603A2 Mirror image memory cell transistor pairs featuring poly floating spacers
01/25/2006EP1618599A2 Method of making a nanogap for variable capacitive elements and device having a nanogap
01/25/2006CN1726600A Thin film transistor array panel for X-ray detector
01/25/2006CN1726597A Vertical insulated gate transistor and manufacturing method
01/25/2006CN1726596A Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
01/25/2006CN1726595A Dense dual-plane devices
01/25/2006CN1726594A Solid-state imaging device and method for producing solid-state imaging device
01/25/2006CN1726587A Manufacture of a trench-gate semiconductor device
01/25/2006CN1726586A Method of manufacture of a trench-gate semiconductor device
01/25/2006CN1726585A Method of manufacturing a trench-gate semiconductor device
01/25/2006CN1726582A Method of manufacturing a semiconductor device and semiconductor device obtained with such a method
01/25/2006CN1726505A Pressure activated fingerprint input apparatus
01/25/2006CN1725933A Wired circuit forming board, wired circuit board, and thin metal layer forming method
01/25/2006CN1725914A Active matrix organic electroluminescent display device and method for manufacturing the display device
01/25/2006CN1725911A Flat panel display and protection device therefor
01/25/2006CN1725522A Thin film transistor and flat panel display using the same
01/25/2006CN1725515A Semiconductor devices with overlapping gate electrodes and methods of fabricating the same
01/25/2006CN1725514A Transistor of semiconductor device and method of manufacturing the same
01/25/2006CN1725513A Semiconductor device and manufacturing method thereof
01/25/2006CN1725512A Semiconductor device and method for fabricating the same
01/25/2006CN1725511A Semiconductor device and method of fabricating the same
01/25/2006CN1725510A Low temp polycrystal silicon film transistor and manufacturing method thereof
01/25/2006CN1725509A Semiconductor device and method for fabricating the same
01/25/2006CN1725508A LDMOS device and method of fabrication
01/25/2006CN1725507A Semiconductor device and manufacturing method
01/25/2006CN1725506A Strained-channel semiconductor structure and method of fabricating the same
01/25/2006CN1725505A Bipolar transistor and fabrication method of the same
01/25/2006CN1725501A Semiconductor device and manufacturing method thereof
01/25/2006CN1725496A Memory array having a layer with electrical conductivity anisotropy
01/25/2006CN1725493A Method and apparatus transporting charges in semiconductor device and semiconductor memory device
01/25/2006CN1725472A Method of manufacturing semiconductor device
01/25/2006CN1725468A Flash memory process with high voltage LDMOS embedded
01/25/2006CN1725453A Creating increased mobility in a bipolar device and bipolar device
01/25/2006CN1725448A Methods for manufacturing semiconductor device, and semiconductor device and transistor
01/25/2006CN1725366A Stacked semiconductor memory device
01/25/2006CN1725273A Transistor, method of fabricating the same, and light emitting display comprising the same
01/25/2006CN1725089A Manufacturing method of two-wine structure film transistor array
01/25/2006CN1724261A Solid semiconductor element, ink tank with the element, and their using method
01/25/2006CN1238906C Semiconductor device with reduced parasitic capacitance between impurity diffusion zone
01/25/2006CN1238905C Electronic component comprising variable capacitance diodes, use of said component in receiving unit and circuit arrangement comprising said component
01/25/2006CN1238904C Lateral junction type field effect transistor