Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2006
01/25/2006CN1238902C Static RAM unit and manufacture thereof
01/25/2006CN1238901C Semiconductor storage device using single slop transistor to transport voltage for selected word line
01/25/2006CN1238898C 三维器件 3D device
01/25/2006CN1238896C Semiconductor switch circuit device
01/25/2006CN1238895C Low-inductance gate-controlled thyristor
01/25/2006CN1238885C Method and device for semiconductor crystallization by laser beam
01/25/2006CN1238756C Active matrix substrate, photoelectric device and electronic device
01/25/2006CN1238686C Mechanical shape variable detection sensor
01/24/2006US6990023 Horizontal memory devices with vertical gates
01/24/2006US6990022 Semiconductor memory device and portable electronic apparatus
01/24/2006US6990019 Nonvolatile semiconductor memory adapted to store a multi-valued data in a single memory cell
01/24/2006US6990018 Non-volatile semiconductor memory device, electronic card using the same and electronic apparatus
01/24/2006US6990009 Nanotube-based switching elements with multiple controls
01/24/2006US6989882 Wiring board, circuit board, electro-optical device and method for manufacturing the same, and electronic device
01/24/2006US6989844 Image display
01/24/2006US6989706 Method for application of gating signal in insulated double gate FET
01/24/2006US6989607 Stress reduction in flip-chip PBGA packaging by utilizing segmented chips and/or chip carriers
01/24/2006US6989603 nF-Opening Aiv Structures
01/24/2006US6989598 Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the same
01/24/2006US6989589 Programmable sensor array
01/24/2006US6989583 Semiconductor device
01/24/2006US6989582 Method for making a multi-die chip
01/24/2006US6989581 Wide band gap bipolar transistor with reduced thermal runaway
01/24/2006US6989580 Process for manufacturing an array of cells including selection bipolar junction transistors
01/24/2006US6989579 Adhering layers to metals with dielectric adhesive layers
01/24/2006US6989578 Inductor Q value improvement
01/24/2006US6989577 Semiconductor device having multiple insulation layers
01/24/2006US6989576 MRAM sense layer isolation
01/24/2006US6989575 Formation of arrays of microelectronic elements
01/24/2006US6989574 High temperature circuit structures with thin film layer
01/24/2006US6989573 Lanthanide oxide/zirconium oxide atomic layer deposited nanolaminate gate dielectrics
01/24/2006US6989572 Symmetrical high frequency SCR structure
01/24/2006US6989571 Active matrix organic electro luminescence device panel
01/24/2006US6989570 Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit
01/24/2006US6989569 MOS transistor with a controlled threshold voltage
01/24/2006US6989568 Lateral high-breakdown-voltage transistor having drain contact region
01/24/2006US6989567 LDMOS transistor
01/24/2006US6989566 High-voltage semiconductor device including a floating block
01/24/2006US6989565 Memory device having an electron trapping layer in a high-K dielectric gate stack
01/24/2006US6989564 Nonvolatile semiconductor storage apparatus and method of manufacturing the same
01/24/2006US6989563 Flash memory cell with UV protective layer
01/24/2006US6989562 Non-volatile memory integrated circuit
01/24/2006US6989561 Trench capacitor structure
01/24/2006US6989560 Semiconductor device and method of fabricating the same
01/24/2006US6989559 Discrete circuit component having fabrication stage clogged through-holes and process of making the same
01/24/2006US6989558 Field effect transistor
01/24/2006US6989557 Bipolar junction transistor and fabricating method
01/24/2006US6989556 Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
01/24/2006US6989555 Strain-controlled III-nitride light emitting device
01/24/2006US6989553 Semiconductor device having an active region of alternating layers
01/24/2006US6989524 Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
01/24/2006US6989338 Method for forming a multi-layered structure of a semiconductor device and methods for forming a capacitor and a gate insulation layer using the multi-layered structure
01/24/2006US6989336 Process for laminating a dielectric layer onto a semiconductor
01/24/2006US6989335 Composite dielectric forming methods and composite dielectrics
01/24/2006US6989330 Semiconductor device and method of manufacture thereof
01/24/2006US6989323 Method for forming narrow gate structures on sidewalls of a lithographically defined sacrificial material
01/24/2006US6989322 Method of forming ultra-thin silicidation-stop extensions in mosfet devices
01/24/2006US6989318 Method for reducing shallow trench isolation consumption in semiconductor devices
01/24/2006US6989316 Semiconductor device and method for manufacturing
01/24/2006US6989309 High voltage MOS transistor with up-retro well by providing dopant in an epitaxial layer
01/24/2006US6989308 Method of forming FinFET gates without long etches
01/24/2006US6989307 Mask ROM, and fabrication method thereof
01/24/2006US6989306 Termination structure of DMOS device and method of forming the same
01/24/2006US6989305 Method of manufacturing semiconductor device
01/24/2006US6989303 Nonvolatile semiconductor device with floating gate structure
01/24/2006US6989302 Method for fabricating a p-type shallow junction using diatomic arsenic
01/24/2006US6989301 Method for manufacturing semiconductor device
01/24/2006US6989300 Method for forming semiconductor films at desired positions on a substrate
01/24/2006US6989298 Method of forming thin-film transistor devices with electro-static discharge protection
01/24/2006US6989297 Variable thickness pads on a substrate surface
01/24/2006US6989285 Method of fabrication of stacked semiconductor devices
01/24/2006US6989058 Use of thin SOI to inhibit relaxation of SiGe layers
01/24/2006US6988407 Acceleration sensor
01/19/2006WO2006007394A2 Strained tri-channel layer for semiconductor-based electronic devices
01/19/2006WO2006007367A1 Method of making mirror image memory cell transistor pairs featuring poly floating spaces
01/19/2006WO2006007350A1 High mobility tri-gate devices and methods of fabrication
01/19/2006WO2006007327A2 Forming semiconductor devices by printing multiple semiconductor inks
01/19/2006WO2006007196A2 Nanotube-based transfer devices and related circuits
01/19/2006WO2006007143A2 Schottky device and method of forming
01/19/2006WO2006007141A2 Lead solder indicator and method
01/19/2006WO2006007070A2 Ldmos transistor
01/19/2006WO2006007068A2 Integration of strained ge into advanced cmos technology
01/19/2006WO2006006972A1 Improved strained-silicon cmos device and method
01/19/2006WO2006006964A1 Silicon carbide devices and fabricating methods therefor
01/19/2006WO2006006611A1 Ic chip and its manufacturing method
01/19/2006WO2006006341A1 Solid state image pickup device and its manufacture
01/19/2006WO2005112125A3 Misalignment-tolerant multiplexing/demultiplexing architectures
01/19/2006WO2005109517A3 Semiconductor device using location and sign of the spin of electrons
01/19/2006WO2005106890A8 An organic electronic circuit with functional interlayer and method for making the same
01/19/2006WO2005094534A3 A semiconductor device having a silicided gate electrode and method of manufacture therefor
01/19/2006WO2005022639A3 Gallium nitride material devices and methods of forming the same
01/19/2006WO2005001895A3 Patterned thin film graphite devices and method for making same
01/19/2006US20060014392 Method for producing a semiconductor component and a semiconductor component produced according to the method
01/19/2006US20060014380 Production method for wiring structure of semiconductor device
01/19/2006US20060014366 Control of strain in device layers by prevention of relaxation
01/19/2006US20060014358 Method for microfabricating structures using silicon-on-insulator material
01/19/2006US20060014357 Structure and method of making an enhanced surface area capacitor
01/19/2006US20060014353 Semiconductor device and manufacturing method therefor
01/19/2006US20060014349 Planarized and silicided trench contact
01/19/2006US20060014347 Semiconductor integrated circuit device having single-element type non-volatile memory elements