Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2006
01/17/2006US6987311 Thin film transistors of a thin film transistor liquid crystal display and method for fabricating the same
01/17/2006US6987309 Semiconductor device applied to a variable capacitance capacitor and amplifier
01/17/2006US6987308 Ferroelectric capacitors with metal oxide for inhibiting fatigue
01/17/2006US6987307 Stand-alone organic-based passive devices
01/17/2006US6987305 Integrated FET and schottky device
01/17/2006US6987304 Methods and apparatus for particle reduction in MEMS devices
01/17/2006US6987303 Silicon-controlled rectifier structures on silicon-on insulator with shallow trench isolation
01/17/2006US6987302 Nanotube with at least a magnetic nanoparticle attached to the nanotube's exterior sidewall and electronic devices made thereof
01/17/2006US6987299 High-voltage lateral transistor with a multi-layered extended drain structure
01/17/2006US6987298 Circuit layout and structure for a non-volatile memory
01/17/2006US6987297 Semiconductor memory device and manufacturing method thereof
01/17/2006US6987296 Semiconductor device having contact hole with improved aspect ratio
01/17/2006US6987294 Charge-coupled device and method of fabricating the same
01/17/2006US6987292 Schottky junction transistors and complementary circuits including the same
01/17/2006US6987291 Integrated transistor circuitry
01/17/2006US6987290 Current-jump-control circuit including abrupt metal-insulator phase transition device
01/17/2006US6987289 High-density FinFET integration scheme
01/17/2006US6987287 Light emitting diode having an adhesive layer and a reflective layer
01/17/2006US6987285 Semiconductor light emitting device in which high-power light output can be obtained with a simple structure including InGaAsP active layer not less than 3.5 microns and InGaAsP and InP cladding
01/17/2006US6987284 Active matrix type display device and method of manufacturing the same
01/17/2006US6987283 Semiconductor device structure
01/17/2006US6987069 Fabrication process of a semiconductor integrated circuit device
01/17/2006US6987065 Method of manufacturing self aligned electrode with field insulation
01/17/2006US6987062 Manufacturing method of semiconductor device
01/17/2006US6987056 Method of forming gates in semiconductor devices
01/17/2006US6987054 Method of fabricating a semiconductor device having a groove formed in a resin layer
01/17/2006US6987052 Method for making enhanced substrate contact for a semiconductor device
01/17/2006US6987050 Self-aligned silicide (salicide) process for low resistivity contacts to thin film silicon-on-insulator and bulk MOSFETS and for shallow junctions
01/17/2006US6987049 Semiconductor transistors and methods of fabricating the same
01/17/2006US6987047 Method of manufacturing a nonvolatile semiconductor memory device having a stacked gate structure
01/17/2006US6987046 Method for manufacturing flash memory device
01/17/2006US6987044 Volatile memory structure and method for forming the same
01/17/2006US6987043 Method of manufacturing semiconductor device having a plurality of trench-type data storage capacitors
01/17/2006US6987042 Method of forming a collar using selective SiGe/Amorphous Si Etch
01/17/2006US6987040 Trench MOSFET with increased channel density
01/17/2006US6987039 Forming lateral bipolar junction transistor in CMOS flow
01/17/2006US6987038 Method for fabricating MOS field effect transistor
01/17/2006US6987036 Method for forming crystalline semiconductor film and apparatus for forming the same
01/17/2006US6987035 Method and apparatus for forming crystallized semiconductor layer, and method for manufacturing semiconductor apparatus
01/17/2006US6987028 Method of fabricating a microelectronic die
01/17/2006US6986834 Hafnium silicide target and manufacturing method for preparation thereof
01/17/2006US6986693 Group III-nitride layers with patterned surfaces
01/17/2006CA2280182C Communicating between stations
01/12/2006WO2006004746A2 Mosgated power semiconductor device with source field electrode
01/12/2006WO2006003619A1 A thin film transistor, method of producing same and active matrix display
01/12/2006WO2006003584A2 Field-effect transistors fabricated by wet chemical deposition
01/12/2006WO2006003579A1 Field effect transistor method and device
01/12/2006WO2006003104A1 Method and structure for strained finfet devices
01/12/2006WO2005112124A3 Isolation trench
01/12/2006WO2005101515A3 Process to improve transistor drive current through the use of strain
01/12/2006WO2005097542A3 IMPROVED THERMOELECTRIC MODULE WITH Si/SiGe AND B4C/B9C SUPER-LATTICE LEGS
01/12/2006WO2005038997A3 Intersubband detector with avalanche multiplier region
01/12/2006WO2005036595A3 Reducing dark current of photoconductor using herojunction that maitains high x-ray sensitivity
01/12/2006WO2005023700A3 Nanoelectonic devices based on nanowire networks
01/12/2006US20060010187 Arbitrarily accurate composite pulse sequences
01/12/2006US20060009046 Manufacturing method of polymetal gate electrode
01/12/2006US20060009044 Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus
01/12/2006US20060009043 Methods of forming a composite dielectric structure and methods of manufacturing a semiconductor device including a composite dielectric structure
01/12/2006US20060009042 Methods of forming openings, and methods of forming container capacitors
01/12/2006US20060009035 Method for forming polysilicon local interconnects
01/12/2006US20060009032 Manufacturing method for semiconductor device having a T-type gate electrode
01/12/2006US20060009015 Method of manufacturing a semiconductor device and semiconductor manufacturing apparatus
01/12/2006US20060009007 Integrated circuit having a device wafer with a diffused doped backside layer
01/12/2006US20060009002 Method for producing a transistor structure
01/12/2006US20060008999 Creating a dielectric layer using ALD to deposit multiple components
01/12/2006US20060008998 Semiconductor assemblies, methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates
01/12/2006US20060008997 Atomic layer deposition of interpoly oxides in a non-volatile memory device
01/12/2006US20060008994 Semiconductor device and method of manufacturing the same
01/12/2006US20060008992 Semiconductor integrated circuit device and a method of manufacturing the same
01/12/2006US20060008991 Trenched semiconductor devices and their manufacture
01/12/2006US20060008989 Method for forming an array with polysilicon local interconnects
01/12/2006US20060008988 Method of forming a memory cell
01/12/2006US20060008987 Method for forming a floating gate memory with polysilicon local interconnects
01/12/2006US20060008978 Decoupling capacitor for high frequency noise immunity
01/12/2006US20060008975 Wafer with vertical diode structures
01/12/2006US20060008969 Method of forming dielectric film
01/12/2006US20060008966 Memory utilizing oxide-conductor nanolaminates
01/12/2006US20060008963 Method for forming polysilicon local interconnects
01/12/2006US20060008959 Layer arrangement and memory arrangement
01/12/2006US20060008958 Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer
01/12/2006US20060008957 Method of fabricating poly-crystalline silicon thin film and method of fabricating transistor using the same
01/12/2006US20060008954 Methods for integrating replacement metal gate structures
01/12/2006US20060008953 Structure of ltps-tft and method of fabricating channel layer thereof
01/12/2006US20060008950 Vertical tunneling transistor
01/12/2006US20060008938 Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation
01/12/2006US20060008934 Micromechanical actuator with multiple-plane comb electrodes and methods of making
01/12/2006US20060008933 Method for producing an integrated pin diode and corresponding circuit
01/12/2006US20060007767 Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming
01/12/2006US20060007750 Flash memory
01/12/2006US20060007749 Methods for neutralizing holes in tunnel oxides of floating-gate memory cells and devices
01/12/2006US20060007748 Methods for neutralizing holes in tunnel oxides in tunnel oxides of floating-gate memory cells and devices
01/12/2006US20060007747 Flash memory
01/12/2006US20060007746 Methods for neutralizing holes in tunnel oxides of floating-gate memory cells and devices
01/12/2006US20060007745 Two-bit charge trap nonvolatile memory device and methods of operating and fabricating the same
01/12/2006US20060007744 Flash memory
01/12/2006US20060007743 Flash memory
01/12/2006US20060007724 Double-cell memory device
01/12/2006US20060007633 Decoupling capacitor for high frequency noise immunity
01/12/2006US20060007380 Semiconductor device and manufacturing method thereof
01/12/2006US20060006555 Process for resurf diffusion for high voltage MOSFET